Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                

EE380 EC Lab 2 Report

Download as docx, pdf, or txt
Download as docx, pdf, or txt
You are on page 1of 8

EE380 EC Lab 2 Report

Name: Abhishek Dechalwad

Roll No: 210038

Group members: Shikhar singh,Sumit

Objective : To measure parameters of PN junction Diode (1N4007)

Discussion : The parameters of the model must be measured by designing suitable experiments such that a
system of constraints is imposed on the device so that only one parameter manifests itself at a time.

Sub-Experiment 1: To measure parameters 𝐼 𝑆 (Reverse Saturation Current), 𝑛 (Ideality Factor):


PRE-LAB:

Design Procedure and Simulation : The following constraints are imposed: 1.)

DC measurements are used to eliminate time dependent terms

2.) 𝐼𝑜 vs 𝑉𝐷 data is obtained using instruments like an oscilloscope, function generator and power supplies
The circuit is chosen such that 𝑉𝐷 is less sensitive to measurement errors.
Analysis : -

Curve Fitting on x gives the equation of 𝑙𝑛(𝐼𝑜 ) vs 𝑉𝐷 gives the equation

𝑙𝑛(𝐼𝑜 ) = 22.742 ∗ 𝑉𝑑 − 19.435

Which implies ln(𝐼𝑠 ) = −19.435

⇒ 𝐼𝑠 = 3.62𝑛𝐴 and 1/𝑛𝑉𝑇 = 22.742

⇒ 𝑛 = 1.69

Sub-Experiment 2: To measure parameters 𝐼 𝑆 (Reverse Saturation Current), 𝑛 (Ideality Factor) (Op-


Amp Circuit):

Pre-LAB:

Design Procedure and Simulation : The IV characteristic of the diode is obtained by changing the value
of Resistor (changing the current flowing through the diode and the Voltage across the diode)
Analysis : -
Curve Fitting on Microcap gives the equation of 𝑙𝑛(𝐼𝑜 ) vs 𝑉𝐷 gives the equation

𝑙𝑛(𝐼𝑜 ) = 22.684 ∗ 𝑉𝑑 − 19.416

Which implies ln(𝐼𝑠 ) = −19.416

⇒ 𝐼𝑠 = 3.69𝑛𝐴 and 1/𝑛𝑉𝑇 = (22.684)

⇒ 𝑛 = 1.69 (Similar to above sub experiment)

Equations: 𝑉𝐼𝑁/R = 𝐼𝐷

⇒ 𝑙𝑛 𝑉𝐼𝑁 − 𝑙𝑛(𝑅) = 𝑙𝑛(𝐼𝑠 ) + 𝑉𝑑 𝑛𝑉𝑇

⇒ 𝑉𝑑 = −𝑛𝑉𝑇 𝑙𝑛(𝑅) + 𝑛𝑉𝑇 (𝑙𝑛(𝑉𝐼𝑁) − 𝑙𝑛(𝐼𝑠)


INLAB

R (in ohm) Io (in A) ln(Io) Vd (in V)


1K 5 x 10-3 -5.298 0.659
10K 5 x 10-4 -7.6 0.543
100K 5 x 10-5 -9.903 0.437
1M 5 x 10-6 -12.206 0.346
10M 5 x 10-7 -14.508 0.246

Corresponding equation: 𝑙𝑛(𝐼𝑜 ) = 22.464 ∗ 𝑉𝑑 − 19.916

Is= 2.219 nA

n=1.712
Sub-Experiment 3: To measure Junction Parameters such as 𝐶 𝐽𝑂 (Junction capacitance at zero
bias), 𝑉𝐽 (Junction Potential), 𝑀 (Grading Coefficient)

Pre-LAB:

Design Procedure and Simulation : AC analysis is carried out with frequency below the unity gain
frequency of op-amp and a 90∘ phase difference between the input and output waveform is expected.

Simulation Analysis :

𝐶𝑗𝑜 = 34.27𝑝𝐹 and 𝑉𝑗 = 0.71 and 𝑚 = 0.473

INLAB
Offset V (in V) Vo ( in mV)
0 39
-1 27
-1.5 25
-2 21
-2.5 19
-3 19
-3.5 19
-4 17

Cj0= 31.03 pF

m= 1.244

Vj= 0 -0.633V

Sub-Experiment 4: To measure Transit Time (𝑟 )


RR

Pre-LAB:

Design Procedure and Simulation :


Analysis:

𝐼𝐹𝑅 = 4.457𝑉

𝐼𝑅𝑅 = 5.537𝑉

𝑟𝑅𝑅 = 5μ𝑠

Using equations:

𝑟𝑅𝑅 = 𝑟𝑙𝑛 (1 + 𝐼𝐹 / 𝐼𝑅 ) ⇒ 𝑟 = 𝑟𝑅𝑅 / 𝑙𝑛 (1 + 𝐼𝐹/𝐼𝑅 ) = 8.467μ𝑠

INLAB
𝑟= 5.73 μs

Sub-Experiment 5: to get the values of resistor and capacitor to form


1. A positive clamper and a negative clamper

2. Peak detector
3. Doubler

Pre-LAB:

Design Procedure and Simulation : (A positive clamper and a negative clamper)

Design Procedure and Simulation : (Peak detector)

You might also like