EE380 EC Lab 2 Report
EE380 EC Lab 2 Report
EE380 EC Lab 2 Report
Discussion : The parameters of the model must be measured by designing suitable experiments such that a
system of constraints is imposed on the device so that only one parameter manifests itself at a time.
Design Procedure and Simulation : The following constraints are imposed: 1.)
2.) 𝐼𝑜 vs 𝑉𝐷 data is obtained using instruments like an oscilloscope, function generator and power supplies
The circuit is chosen such that 𝑉𝐷 is less sensitive to measurement errors.
Analysis : -
⇒ 𝑛 = 1.69
Pre-LAB:
Design Procedure and Simulation : The IV characteristic of the diode is obtained by changing the value
of Resistor (changing the current flowing through the diode and the Voltage across the diode)
Analysis : -
Curve Fitting on Microcap gives the equation of 𝑙𝑛(𝐼𝑜 ) vs 𝑉𝐷 gives the equation
Equations: 𝑉𝐼𝑁/R = 𝐼𝐷
Is= 2.219 nA
n=1.712
Sub-Experiment 3: To measure Junction Parameters such as 𝐶 𝐽𝑂 (Junction capacitance at zero
bias), 𝑉𝐽 (Junction Potential), 𝑀 (Grading Coefficient)
Pre-LAB:
Design Procedure and Simulation : AC analysis is carried out with frequency below the unity gain
frequency of op-amp and a 90∘ phase difference between the input and output waveform is expected.
Simulation Analysis :
INLAB
Offset V (in V) Vo ( in mV)
0 39
-1 27
-1.5 25
-2 21
-2.5 19
-3 19
-3.5 19
-4 17
Cj0= 31.03 pF
m= 1.244
Vj= 0 -0.633V
Pre-LAB:
𝐼𝐹𝑅 = 4.457𝑉
𝐼𝑅𝑅 = 5.537𝑉
𝑟𝑅𝑅 = 5μ𝑠
Using equations:
INLAB
𝑟= 5.73 μs
2. Peak detector
3. Doubler
Pre-LAB: