BE II YEAR (E&TC) SEPTEMBER 2021

ATR3C1: APPLIED MATHEMATICS II

CLASS TEST-1

Time: 70min. 20 Marks

NOTE: Attempt any four questions. All questions carry equal marks.

1. Show that v(x,y) = x +2y - y is harmonic conjugate of u = 2x - 2xy.

2. Evaluate S. g i C: lz -il = 2 by using Cauchy integral formula.

3. ffjis an analytic function of z then prove that,

27-1)
4. Evaluate f(2) =
Je ziz+2)(2z+1)
C:2= 1 by Cauchy Residue theorem.

5. Prove that Jo 5-3 sin 6)

 BE II YEAR (E&TC) October 2021

ATR3C1: APPLIED MATHEMATICS II

CLASS TEST-2

Time: 70min. 20 Marks

NOTE: Attempt all four questions. All questions carry equal marks.

1. The pressure p of wind corresponding to velocity v is given by the following data. Estimate p
when v= 15.
Velocity v
Pressure P- .1 4.4
2. Prove that:
() (1+A)(1-7) = 1,(tt) sin x.
3. Find an approximate value of y by Picard method when x = 0.1, if x - y * and y =1 at
x = 0.
4. Find a real root of xe* - 1 = 0 by using Newton Raphson method taking xo = 0.5 as an initial

approximation which is correct to four decimal places.

 BE IIYEAR (E&TC) November 2021

ATR3C1: APPLIED MATHEMATICS II

CLASS TEST-3

Time: 1 hr. 20 Marks

Note: attempt all questions.

Q.1. Given logio654 = 2.8156, logio658 2.8182, logao659 = 2.8189, logo661 2.8202, construct
polynomial by using Newton's divided difference interpolation formula.

Q. 2. Use Trapezoidal and Simpson's rule to integrate fx) = 0.2 +25x +3x + 2x from a =
0 to b 2 by dividing the given interval into four equal parts.

Q. 3. Find half range cosine series for the function f(x) = sin 0<x<l

Q 4. For a Markov chain with transition probability matrix P is given by

draw its transition diagram and also find P2s lim P), lim
 2021033

B.E. II EXAMINATION NOv-DEC-2021

Electronics &Telecommunication Engg.
ATR3C1: Applied Mathematics IIII

Duration: 3 Hrs] IMax. Marks: 60

Note: Attempt any TWO parts from each question. Each caries equal marks.

Q.1 (a) i ) Check whether the function zlz| is analytic or not? (06)
i) Find the residue of - a its pole.

(06)
State Cauchy integral formula and evaluate Jc (z2+1)(z2- * 11<
by using Cauchy integralformula where C: lz- 1 <

(C)Find Taylor's or Laurent's expansion oI ne uneu" (1+22)(1+z) *** (06)

i)0< lzl« 1. (i) 1 < lzl <2.

Q.2 (a) In a certain city, if today is sunny, tomorrow will be sunny 80% of time. If today is (06)
cloudy, tomorrow will be cloudy 60% of time. Supposing today is sunny, what is that
probubility it will be cloudy the day after tomorrow? Draw its transition diagram also.

(6) For a Markov chain, the transition matrix is: (06)

0 O.the initial probability distribution is =G2,0).

2
i) Is it a regular Stochastic matrix?
(i) Find pis P23 P lim(, P"}, where symbols have their usual
meaning.

(c) The time to failure in operating hours of a critical solid-state power unit has the (06)
hazard rate function z(t) = 0.003 5 for t 2 0.
500
) What is the reliability if the power unit must operate continuously 15 hrs.
11) Determine the design life if a reliability of 0.80 is desired.

Q.3 (a) For the given table, find the first and second derivatives of y =f(x): (06)

1.00 1.05 1.10 1.15 1.20 1.25 1.30

y1.00 1.0247 1.0488 1.0723 1.0954|1.1180 1.1401

(b)If f(3) = -13,f(15) = 23,f(11) = 899,f(27) = 17315,f(34) = 35606 then (06)
find f(10).

Evaluate d x , by simpson's 1/3rd rule and by Weddle's rule. (06)

TO

Q.4 (a) Using Newton Raphson method, find a real root of the following equation (06)
x sin x + cos x = 0, correct to 3 decimal places, which is near to x = n 3.1459.

(6) Solve the equations by Gauss Seidal method: (06)

13x + 2y + 3z = 46, 2x + 15y +Z = 33, x - y + 10z = 25.

C)Find the value of y at x = 0 . 2 , = x + y.y(0) =1 by using Euler's modified 06)

method by taking step size of 0.1.

Q.5 (a) Find Fourier series representation for function f(x) = Vi-cosx in the interval (06)
(0. 2m) and hence prove that t tt=

(b) Obtain Fourier series for the function (06)

(Tx, 0Sxs1
fCx)=
r(2 x), 1sxs2
Deduce that t t t + =

(c) Determine half range Fourier sine series for the function f(x) = x +x, 0 Sxsn. (06)

Best of lu
 II B.E. Examination, Nov-2021
Electronics & Telecommunication
ETR3C3: Data Structure

Note: All questions are compulsory. Each question has equal marks (4).

Q1) How can we represent a priority queue by using heap? Explain heap sort with following data
4, 3, 7, 1, 8, 5.

02) Define AVL tree with rotations. Justify the requirement of height balanced tree.
Create AVL tree for following given Sequence:
55,66,77,15,11,33,22,35,25,44,88,99.

03) Construct a binary tree T from following Sequence

PREORDER: P ASTQEDXMRXMRCF
INORDER: TSQAED PMXCRF (also Write post order traversal for tree T.)

Q4) Differentiate between B- Tree & B+ Tree Construct B+ TREE of order 4 by inserting the
following elements 25,9,4,16,1,20,13,15,10,11,12,18.

Q5) What is the difference between DFS & BFS. Write the DFS Algorithm & traverse it starting
from the Vertex V7 Showing Various stages.
 II B.E. Examination-TEST 1, SEP-2021
Electronics & Telecommunication
ETR3C3: Data Structure

Time: 70 Min Maximum Marks: 20

Note: All questions are compulsory.

Q1. An array X[-1... I0, 15..40] requires 2 byte of storage. If the beginning location is 1900 determine the

Location of X[I5][20], when the matrix is arranged (i) Column Major Wise, and (i) Row major wise. 5

Q2. Why do we need binary search? Write a program to find number of l's in given sorted array & derive the

Complexity A [l = [0, 0, 0, 1, 1, 1, 1, 1, 1].

Q3. Finds out the difference between insertion sort & selection sort. Derive the complexity for both sorting algorithm
with following key sequence 8, 5, 7, 1,9,3,2 Count total no. of swap for both the algorithms. 5

Q4. What do you mean by efficiency of an algorithm? How can you compare the efficiency of two algorithms?
Describe the notations that used to represent algorithm complexity.
Exam code: 2021035

1I B.E. Examination, NOv-2021

Electronies & Teleconmmunication
Time: 3 hours ETRIC3: Data Structure Maximum Marks: 60

Note: All questions are compulsory. Attempt any two parts from each queston.

Q1 (A) An aray X[-I.. 10, 15.01 requires 4 byte of storage. If the beginning location is 1500 determine the
Location of X[IS||19]. when the matrix is arranged (i) Column Major Wise, and (i) Row majar wise.

Q1 (B) Why do we need binary search? Write a program to find number of I's in given sorted array & derive the
Complexity All= [0, 0,0,0, 1. 1. 1. 1. 1. I1.

Q1 (C) find out the difference between insertion sort & selection sort. Derive the complexity for both sorting algorithm
with following key sequence 6, 8, 5, 7, 1,9, 3, 2

Q2(A) Write an algorithm to canvert infix expression to reverse polish expression. Tace the algorithm for following

Evaluate converted expression tor these values (AA, B=I, C I , D=3, ES

Q2 (B) Write a CIC++ program for sorting the list of integers using quick sort algorithm. Show the trace of the algorithm
for following key sequence 37,80,2247,13,69,93,14,45.58,79. 71. 6

02(C) What is merge sort? Derive the complexity of merge sort. Wnite a program to implement the merge sort

Q3 (A) How can we insert a node ina random location of singly Linked List? Write a CC+ program & explain with
example.
Q3 (B) Explain in detail different types of Queue. Write a CC++ Program to implement circular queue

Q3 (C) How can we represent a priority queue by using heap? Explain heap sort with fallowing data 4, 3,7. 1. 8. 5, 9 6

Q4 (A) Define AVIL tree with rotations. Justify the requirement of height balanced tre. Create AVL tree for following
given Sequence: 55,66,77,15,11,33,22,35,25,44,88,99.

Q4 (B) Construct a binary tree T from following Sequence

PREORDER: PASTQEDXMRXMRCF
INORDER: TSQAEDP MXCRF (also Write post order traversal for tree T.)

94(C) differentiate between 8- 1Tree & B 1ree Construct B TREE of order 5 by insertung the tolowing clements
25,9,4,16,1,20,13,15,10,11,12,18.

Q5 (A) What is the use of Dijkastra's algorithm? Write algorithm & ind shornest path from given source nose A
For following Graph.

Q5 (8) What is uinimum spanning tree. wie prims algorithms & find out minimurm panning tree for given graph

05 (C) What is the difference between DFS & BES. Write the DFS Algorithm & traverse it starting from the Vertex
7 ShowingE Various stages.
 Institute of Engineering & Technology
DAVV Indore
ETR3G1 Electronic Devices And Fabrication
ETC/ EI-II
Max Marks: 20 Class Test -1 Duration: 75 min.

Note: Attempt all question. Do not copy theory from books answer will be explain in your own language.

Q:1 Write short note on distribution function and Fermi energy.

Q:2 Drive the Equation for thermal equilibrium concentration of holes.

0:3 Explain charge neurality

Q:4 Explain equilibrium distribution of electrons and holes.
 Institute of Engineering & Technology
DAVV Indore
ETC/EI-I
ETR3G1/ER3GI Electronie Devices and Fabrication
Max Marks: 20 Class Test- 2 Duration: 75
min.

Note: Attempt all question.

Q:1 Answer the following in reference to fabrication of BJTs fabrication

(i) What care has to be kept in undertaking metallization process?

(i) How is isolation between collectors of different BJTs fabricated on a chip achieved?

(ii) List the steps undertaken in the photolithography process

Q:2 A silicon semiconductor is in the shape of a rectangular bar with a cross-section area of 100 cm a length of
0.I cm, and is doped with 5 x 10" cm" arsenic atom. The temperature is T= 300 K. Determine the current if 5 V is
applied across the length. (6) Repeat part (a) if the length is reduced to 0.01 cm. (c) Caleulate the average drift
velocity of electrons in parts (a) and (6). 5

Q:3 How mobility depends on the temperature, doping concentration, ionized atoms and phonons also drive the
diffusion current.

Q:5 drive relation between excess carrier recombination and the diffusion length in steady sate condition

******************************"*******************************"********************************************************************
 Institute of Engineering& Technology
DAVV Indore
ETC/EI-II
ETR3GI/EIR3GI Electronic Devices and Fabrication
Max Marks: 20 Class Test-3 Duration: 75 min.
Note: Attempt all Question

Q: 1 (a) List various steps involved in growing wafer from the silica ore. 3
(b) For the fabrication of BJT the common starting substrate shall have crystal
orientation of (111). Why? 2

Q: 2 Consider the uniformly doped GaAs junction at T = 300 K. At zero bias, only 20
percent of the total space charge region is to be in the p region. The built-in potential
barrier is Vh= 1.20 V. For zero bias, determine (a) Na. (b) Na (c) xa (d) Xp and (e) Emax 5

Q: 3 Consider a uniformly doped silicon pn junction with duping concentrations

Na = 5x 10" cm and N, = 10" em. (a) Calculate Va. at T = 300 K. (b) Determine the
temperature at which Vhi decreases by I percent.

Q: 4 Drive the current equation for pn junction if some defects are percent at metallurgical
junction than what will change in current and also draw characteristics for same.

*****
 IET DAVV, INDORE

B. EII Year(E&TC, EI, MECH)

TEST-I (SEPTEMBER 2021)
Effective Communication Skills (STR3$3, SER3S3, SMR3S3)

Time: 70 min Max Marks: 20

NOTE : Attempt all the questions

Q.1 What are the different ways to create best impression on workplace with people? (05)

Q.2 What precautions one must take while receiving praises and criticism? (10)

Q.3 Discuss in detail the various do's and don'ts for telephone communications skills in
professional fields? (05)
 IET DAVV, INDORE

B. EII Year (E&TC, E&l, MECH)

TEST - II (OCTOBER 2021)

Effective Communication Skills (STR3$3, SER3S3, SMR3S3)

Time: 70 min Max Marks: 20

NOTE: Attempt all the questions:

Q.I Define Communication. Explain in detail the different forms of Communication. (05)

Q.2 Write in detail the barriers to Communication and also the ways to resolve them? (05)

Q.3 What are the different methods of speaking and also write their merits and demerits. (05)

Q.4 How far non-verbal aspect lays effect on presentation? Write in points. (05)
 L.E.T DAVVv, INDORE

B.E. 2nd Year-Test IlI (November 2021)

(Mech/ E&TC (A&B) E&1)

(SMR3S3/STR3S3/SER3$3)
Efective Communication Skills

Duration: 70 min. Max. Marks: 20

Q1. What are the special skills required for a good group discussion? (10)
Q2. What are the different types of questions asked in any interview? (05)
Q3. What do's and don'ts one must follow for a group discussion? (05)
 IET, DAVV EX CODE -2021038)
B.E. II Year Examination (November-December 2021)

(E&TC 'A' and 'B/E&/ MECH)

Efective Communication Skills

(STR3S3/SER3S3/SMR3S3)

Duration: 3 Hours Max. Marks : 60

Q1. Answer any two of the following questions:

(a) Define Communication and its process along with its diagram. (06)
(b) What are the diflerent forms of communication? Explain. (06)
(c) What are the advantages and disadvantages of technological gadgets used in communication? (06)

02. Answer any two of the following questions:

(a) What are the different ways to resolve conflicts? Explain with example. (06)
(b) How does the knowledge of cross-cultural communication helps in professional development?
Write ten points. (06)
(c) How can a person build positive impression at the workplace with inter-personal skills? (06)

Q3. Answer anv two of the following questions:

(a) What are the barriers to effective listening? Write the ways to remove them. (06)
(b) How far listening works as a skill in good communication? Give ten reasons. (06)
(c) What is the importance of listening for Group Discussion and Interview? (06)

Q4. Answer any two of the following questions:

(a) What do's and don'ts should be followed for a good interview? (06)
(b) What mental and academic preparation should be done for interview? (06)
(c) Write the most probable ten questions for an interview along with your own answers. (06)

Q5. Answer anv two of the following questions:

(a) What preparation should be done for a presentation? (06)

(b) What are the different methods of speaking? Explain in detail. (06)
(c) How should one prepare for a Group Discussion? Write in logical points. (06)
 II B.E (Electronics & Telecommunication)
Class Test II October 2021
Sub: ETR3C2 Digital Electronics

Time: 70 min Max Marks: 20

Note: Attempt any four questions.. All questions carry equal marks.

Q.1 Design negative edge triggered JK flip-flop. Draw the complete circuit diagram.

Q.2 Design positive edge triggered T flip-flop with active high PRESET and CLEAR inputs.
Draw the complete diagram.

Q.3 Design four-bit parallel in, serial out, shift register with shift and load inputs. Use negative
edge triggered D flip-flops.

Q.4 Design mod-12 asynchronous counter using negative edge triggered T-flip-flops.

Q.5 Design a synchronous counter that goes through states 2,4,5,7 using negative edge triggered
JK flip-flops. If counter goes to invalid state it comes back to state 2.
 IIB.E (Electronics & Telecommunication)
Class Test II October 2021
Sub: ETR3C2 Digital Electronics

Time: 70 min Max Marks: 20

Note: Attempt any five questions. All questions carry equal marks.

Q1. Explain working of TTL Totem as well as open collector output two input NAND
4
gates
Q.2 Following is the logic diagram 74LS138 IC 3 to 8 decoder IC, design 4 to 16
decoder using two 74LS138 IC's. 4

Input P

74LS138
Enable Pins Output Pins

a ths aetive LOw

Output Pin Y-

GD
IC 74LS138 Pin Diagram

Q.3 Draw truth table of 8 to 3 priority encoder with active high inputs and outputs. 4

Q.4 Design a 4 bit Binary to 2421 BCD converter The table is given below.
5

OOO OOOO

O001 OOO1
O01O oo1o
oo11 O011
O10O O10o
o101 1011
o11o 1100

100O

Q.5 Implement a full adder as well as half adder circuit 3 to 8 decoder. 4

Q.6 Obtain the minimum expression using K-map method and implement it using
NAND gates. Determine the essential, redundant and selective prime implicants.
F Em(0,1,3,4,5,7,10,13,14,15) 4
 II B.E (Electronics & Telecommunication)
Class Test I September 2021
Sub: ETR3C2 Digital Electronics

Time: 70 min Max Marks: 20

Note: Attempt any five questions. All questions carry equal marks.

Q.1 Assume A=65, B-65, ...Z= 90 in decimal. Take first two alphabets of your name.
Add weight assigned to them get the resultant number. Determine the equivalent
binary, Octal, hexadecimal and grey code of the resultant number. 4

Q.2 Assume A=65, B-65,...Z= 90 in decimal. Take last two alphabets of your name.
Convert weight assigned to them to 8-bit binary. Then subtract last alphabet from
last but one alphabet. Give the result in 8-bit two's complement form. 4

Q.3 Assume A=1, B=2,...Z=26 in decimal. Calculate a number x = ((weight of first

alphabet of your name) mod 16). Write number x in four-bit binary. Determine
Hamming code for number x. 4

Q.4 Implement the following as Sum of Products expression using NAND gates.
x m(0,1,3,4,5,7,10,13,14,15). 4

Q.5 Given That F A,B,C.D) =A'B'+C'D'convert this Sum of Products expression

to Product of Sum form. 4

Q.6 Design a four bit BCD adder using four-bit binary adder IC 74LS83. 4
 <Exam Code
< Year> <Course> Examination November-December 2017
Branch>
<Subject Code> <Subjert Name
Time 3 Hours Max. Marks: 10060
Min. Marks: 35/

2021034
I B.E (Electronics& Telecommunication)
November 2021 Examination
Sub: ETR3C2 Digital Electronics

Time: 3 hrs. Max Marks: 60

Note: Attempt all five questions. Attempt any two part of each question. All
questions carry equal marks.

Q.I a) (i) Determine the value of base r if (121), =(l44)%

aan) Express 83 decimal in 5211 format. Gray code.
Perform following subtraction using 2's complement ( 8 bit
number)subtraction 105 61.
Q.I b) (i) A code has four-bit code word has following valid codes.
0001,0010.0100.0111.1000,1011.1101,1110. How many
errors cun be detected in this code? Give reason for your
answer.
(ii)
Following sequence is received at the receiver of a sysiem. 3
101101111110.
It is given that the sequence contains 8 bit of message and
coded in Hamming code assume even parity. Determine
message. (correct it if required.)
Q.I c) (i) Determine the minimum value of load resistance can be
connected to HIGH output of standard Totem Pole TTL
output NAND gate to get the output voltage not less than
3.0V.
c)(1) Draw and cxplain the working NMOS NOR gate.
Q.2 ai) Obtain the minimal expression for
Ffa.b.c.d)= E m(0.1.3.7.8.9.11.15) using K-Map method and
determine the essential prime implicants.
a) () Using K-map method obtain AND-NOR circuit for
following function
Fa.b.c.d)=E m(0,1,2.3,4.5.6.9.1213,14).
b) Why Tri state circuits are required. Explain working of Tri 6
State TTL inverter in detail.

ci) Design a circuit using K-Map to drive segment "c of

seven segment display.
cii) Implement following expressions using 4 to l6 decoder and
OR gates
fila.b.c.d) = m(1,3,5,10,11), f:la,b.c.d) = m(2,5,3,4,7,15).
Q.3 a) Design a circuit convert BCD code to 2421 code.
b) Design negative edge triggerred JK-flip-flop with an active
low PRESET and CLEAR asynchronous input.
c) Design a comparator for two(A &B) 2-bit number using K-
Map and implement it using NAND Gates for A>B, A=B and
A<B.
Q4 a) Design a negative cdge triggered mod 5 asynchronous down
counter.Which counts from I l to O1 and repeat the
sequence.
b) Design a negative edge triggered synchronous Excess-3
modulo 10 counter which counts from 0011 to 1100 using T-
nip-flops and repeat the sequence.
) Design a four-bit ring counter. If MSB contains logic |" and
all other bits contains 0'. Draw the timing diagram for five
clock pulses.
Q.5 a) Explain working switched-capacitor type D/A converter.
b) Design 4 bit flash type AD converter. Also explain working.
) Design a monostable multivibrator using timer 555 IC to
generate pulse width of 1.5 ms. Also explain working.