BCP53 Series

PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT‐223 package
which is designed for medium power surface mount applications.
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•High Current: 1.5 Amps
•NPN Complement is BCP56 MEDIUM POWER HIGH
•The SOT‐223 Package can be soldered using wave or reflow. The CURRENT SURFACE MOUNT
formed leads absorb thermal stress during soldering, eliminating the
PNP TRANSISTORS
possibility of damage to the die
•Device Marking: COLLECTOR 2,4
BCP53T1 = AH
BCP53-10T1 = AH-10
BCP53-16T1 = AH-16 BASE
1
•Pb-Free Packages are Available
EMITTER 3
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit MARKING DIAGRAM
4
Collector‐Emitter Voltage VCEO -80 Vdc
1
Collector‐Base Voltage VCBO -100 Vdc 2
3 AYW
XXXXXG
Emitter‐Base Voltage VEBO -5.0 Vdc SOT-223
G
CASE 318E
Collector Current IC 1.5 Adc
STYLE 1 1
Total Power Dissipation PD A = Assembly Location
@ TA = 25°C (Note 1.) 1.5 Watts Y = Year
Derate above 25°C 12 mW/°C W = Work Week
Operating and Storage TJ, Tstg -65 to °C XXXXX = Specific Device Code
Temperature Range +150 G = Pb-Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit ORDERING INFORMATION
Thermal Resistance, RθJA 83.3 °C/W
Device Package Shipping†
Junction to Ambient
(surface mounted) BCP53T1 SOT-223 1000/Tape & Reel

Lead Temperature for Soldering, TL BCP53T1G SOT-223 1000/Tape & Reel

0.0625″ from case 260 °C (Pb-Free)
Time in Solder Bath 10 Sec BCP53-10T1 SOT-223 1000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum BCP53-10T1G SOT-223 1000/Tape & Reel
Ratings are stress ratings only. Functional operation above the Recommended (Pb-Free)
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. BCP53-16T1 SOT-223 1000/Tape & Reel
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. BCP53-16T1G SOT-223 1000/Tape & Reel
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. (Pb-Free)
BCP53-16T3 SOT-223 4000/Tape & Reel
BCP53-16T3G SOT-223 4000/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2008 1 Publication Order Number:

February, 2008 - Rev. 6 BCP53T1/D
 BCP53 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector‐Base Breakdown Voltage (IC = -100 μAdc, IE = 0) V(BR)CBO -100 - - Vdc
Collector‐Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V(BR)CEO -80 - - Vdc
Collector‐Emitter Breakdown Voltage (IC = -100 μAdc, RBE = 1.0 kohm) V(BR)CER -100 - - Vdc
Emitter‐Base Breakdown Voltage (IE = -10 μAdc, IC = 0) V(BR)EBO -5.0 - - Vdc
Collector‐Base Cutoff Current (VCB = -30 Vdc, IE = 0) ICBO - - -100 nAdc
Emitter‐Base Cutoff Current (VEB = -5.0 Vdc, IC = 0) IEBO - - -10 μAdc

ON CHARACTERISTICS
DC Current Gain (IC = -5.0 mAdc, VCE = -2.0 Vdc) All Part Types hFE 25 - - -
(IC = -150 mAdc, VCE = -2.0 Vdc) BCP53 40 - 250
BCP53-10 63 - 160
BCP53-16 100 - 250
(IC = -500 mAdc, VCE = -2.0 Vdc) All Part Types 25 - -
Collector‐Emitter Saturation Voltage (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) - - -0.5 Vdc
Base‐Emitter On Voltage (IC = -500 mAdc, VCE = -2.0 Vdc) VBE(on) - - -1.0 Vdc

DYNAMIC CHARACTERISTICS
Current‐Gain - Bandwidth Product fT - 50 - MHz
(IC = -10 mAdc, VCE = -5.0 Vdc, f = 35 MHz)

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 BCP53 Series

TYPICAL CHARACTERISTICS
2.0 200
IC/IB = 10 BCP53, -10, -16 150°C, 5 V
1.8 180
Vce(sat), COLLECTOR EMITTER

150°C, 2 V
SATURATION VOLTAGE (V)

1.6 +150°C 160

hFE, DC CURRENT GAIN

1.4 -55°C 140
25°C, 5 V
1.2 120
25°C, 2 V
1.0 100
+25°C
0.8 80
-55°C, 5 V
0.6 60
-55°C, 2 V
0.4 40
0.2 20
0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage Figure 2. DC Current Gain vs. Collector
vs. Collector Current Current (BCP53)
180 300
150°C, 5 V 150°C, 5 V
160
150°C, 2 V 250
150°C, 2 V
hFE, DC CURRENT GAIN

140 hFE, DC CURRENT GAIN

120 25°C, 5 V 200

25°C, 5 V
100 25°C, 2 V
150 25°C, 2 V
80
60 -55°C, 5 V 100 -55°C, 5 V

40 -55°C, 2 V -55°C, 2 V
50
20
0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector Figure 4. DC Current Gain vs. Collector
Current (BCP53-10) Current (BCP53-16)

1.2 1.2
IC/IB = 10 BCP53, -10 IC/IB = 10 BCP53 -16
1.1 1.1
SATURATION VOLTAGE (V)

SATURATION VOLTAGE (V)

Vbe(sat), BASE EMITTER

Vbe(sat), BASE EMITTER

1.0 1.0

0.9 0.9
-55°C -55°C
0.8 0.8

0.7 0.7
+25°C
+25°C
0.6 0.6

0.5 0.5
+150°C +150°C
0.4 0.4
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 5. BCP53, -10 Base Emitter Saturation Figure 6. BCP53-16 Base Emitter Saturation
Voltage vs. Collector Current Voltage vs. Collector Current

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 BCP53 Series

TYPICAL CHARACTERISTICS
1.2 1.2
Vce = 2 V BCP53, -10 Vce = 2 V BCP53 -16
Vbe(on), BASE EMITTER TURN-ON

1.1 1.1

SATURATION VOLTAGE (V)

1.0

Vbe(sat), BASE EMITTER

1.0
0.9
0.9
VOLTAGE (V)

-55°C
-55°C 0.8
0.8
0.7 +25°C
0.7
0.6
0.6 +25°C
0.5
0.5 +150°C
0.4
0.4 0.3
+150°C
0.3 0.2
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 7. BCP53, -10 Base Emitter Turn-On Figure 8. BCP53-16 Base Emitter Turn-On
Voltage vs. Collector Current VBE(on) Voltage vs. Collector Current
Vce, COLLECTOR-EMITTER VOLTAGE (V)

1.0 110
BCP53, -10, -16 IC = 1.0 A IC = 1.5 A BCP53-10
0.9
100
0.8
IC = 500 mA
CAPACITANCE (pF)
0.7 90 BCP53

0.6
IC = 100 mA 80
0.5
70
0.4
0.3 60
0.2 BCP53-16
50
0.1
0 40
0.001 0.01 0.1 1 0 1 2 3 4 5
Ib, BASE CURRENT (A) VOLTAGE (V)
Figure 9. BCP53, -10, -16 Saturation Region Figure 10. Input Capacitance

25 10 100 ms 10 ms
1s 1 ms
Ic, COLLECTOR CURRENT (A)

20
CAPACITANCE (pF)

BCP53-10
1
15
BCP53
10 CONTINUOUS THERMAL LIMIT
0.1
BCP53-16
5
SINGLE PULSE TEST AT Tamb = 25°C
0 0.01
0 2 4 6 8 10 12 14 16 18 20 0.1 1 10 100
VOLTAGE (V) Vce, COLLECTOR EMITTER VOLTAGE (V)
Figure 11. Output Capacitance Figure 12. Standard Operating Area

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 BCP53 Series

PACKAGE DIMENSIONS

NOTES:
D 1. DIMENSIONING AND TOLERANCING PER ANSI
b1 Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.

MILLIMETERS INCHES
4
DIM MIN NOM MAX MIN
HE E A 1.50 1.63 1.75 0.060
1 2 3 A1 0.02 0.06 0.10 0.001
b

b
e1
e

C
A
0.08 (0003)
A1
L1

SOLDERING FOOTPRINT
3.8
0.15

2.0
0.079

6.3
2.3 2.3
0.248
0.091 0.091

2.0
0.079

1.5 SCALE 6:1 ǒinches

mm Ǔ
0.059

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