BC817-40W

45 V, 0.5 A, General
Purpose NPN Transistor
ON Semiconductor’s BC817−40W is a General Purpose NPN
Transistor that is housed in the SC−70/SOT−323 package.

Features www.onsemi.com
 NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable COLLECTOR
 This Device is Pb−Free, Halogen Free/BFR Free and is RoHS 3

Compliant
1
BASE
MAXIMUM RATINGS (TA = 25C)
Rating Symbol Value Unit 2
Collector − Emitter Voltage VCEO 45 V EMITTER

Collector − Base Voltage VCBO 50 V

Emitter − Base Voltage VEBO 5.0 V
Collector Current − Continuous IC 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit SC−70
CASE 419
Total Device Dissipation (Note 1) PD 460 mW STYLE 3
Thermal Resistance, R0JA 272  C/W
Junction−to−Ambient (Note 1)
Junction and Storage Temperature TJ, Tstg − 55 to +150 C MARKING DIAGRAM
Range
Stresses exceeding those listed in the Maximum Ratings table may damage the ▪
device. If any of these limits are exceeded, device functionality should not be CE M
assumed, damage may occur and reliability may be affected. ▪
1. FR−4 Board, 1 oz. Cu, 100 mm2 1

CE = Specific Device Code

M = Date Code
▪ = Pb−Free Package
(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION†
Device Package Shipping
BC817−40WT1G SC−70 3000 / Tape &
(Pb−Free) Reel
NSVBC817−40WT1G SC−70 3000 / Tape &
(Pb−Free) Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

 Semiconductor Components Industries, LLC, 2016 1 Publication Order Number:

May, 2016 − Rev. 2 BC817−40W/D
 BC817−40W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage V(VR)CEO 45 − − V
(IC = 10 mA)
Collector − Emitter Breakdown Voltage V(VR)CES 50 − − V
(VEB = 0 V, IC = 10 µA)
Emitter − Base Breakdown Voltage V(VR)EBO 5.0 − − V
(IE = 1.0 µA)
Collector Cutoff Current ICBO
(VCB = 20 V) − − 100 nA
(VCB = 20 V, TA = 150C) − − 5.0 µA
ON CHARACTERISTICS
DC Current Gain (Note 2) hFE −
(IC = 100 mA, VCE = 1.0 V) 250 − 600
(IC = 500 mA, VCE = 1.0 V) 40 − −
Collector − Emitter Saturation Voltage (Note 2) VCE(sat) − − 0.7 V
(IC = 500 mA, IB = 50 mA)
Base − Emitter On Voltage (Note 2) VBE(on) − − 1.2 V
(IC = 500 mA, VCE = 1.0 V)
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT 100 − − MHz
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
Output Capacitance Cobo − 10 − pF
(VCB = 10 V, f = 1.0 MHz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Condition: Pulse Width = 300 µsec, Duty Cycle  2%

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 BC817−40W

TYPICAL CHARACTERISTICS

700 1
150C VCE = 1 V IC/IB = 10

VCE(sat), COLLECTOR−EMITTER
600

SATURATION VOLTAGE (V)

hFE, DC CURRENT GAIN

150C
500
0.1 25C
25C
400 −55C

300
−55C
0.01
200

100

0 0.001
0.001 0.01 0.1 1 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector Figure 2. Collector Emitter Saturation Voltage
Current vs. Collector Current

1.1 1.2

VBE(on), BASE−EMITTER VOLTAGE (V)

1.0 −55C 1.1 VCE = 5 V
IC/IB = 10
SATURATION VOLTAGE (V)

1.0
VBE(sat), BASE−EMITTER

0.9
0.9 −55C
0.8 25C
0.8
0.7
0.7 25C
0.6 150C
0.6
0.5
0.5
150C
0.4 0.4
0.3 0.3
0.2 0.2
0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs. Figure 4. Base Emitter Voltage vs. Collector
Collector Current Current

1000
fT, CURRENT−GAIN−BANDWIDTH

VCE = 1 V
TA = 25C
PRODUCT (MHz)

100

10
0.1 1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Current Gain Bandwidth Product vs.
Collector Current

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 BC817−40W

TYPICAL CHARACTERISTICS
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0
+1

V, TEMPERATURE COEFFICIENTS (mV/C)

TJ = 25C

0.8 0VC for VCE(sat)

0

0.6

IC = 10 mA 100 mA 300 mA 500 mA -1

0.4

0.2 -2 0VB for VBE

0
0.01 0.1 1 10 100 1 10 100 1000
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 6. Saturation Region Figure 7. Temperature Coefficients

100
C, CAPACITANCE (pF)

Cib
10

Cob

1
0.1 1 10 100
VR, REVERSE VOLTAGE (VOLTS)

Figure 8. Capacitances

1
100 ms 1 ms
1s 10 ms

Thermal Limit
0.1
IC (A)

0.01

Single Pulse Test @ TA = 25C

0.001
0.01 0.1 1 10 100
VCE (Vdc)

Figure 9. Safe Operating Area

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 BC817−40W

PACKAGE DIMENSIONS

SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
D 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
e1 2. CONTROLLING DIMENSION: INCH.

MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
3
A 0.80 0.90 1.00 0.032 0.035 0.040
HE E A1 0.00 0.05 0.10 0.000 0.002 0.004
1 2 A2 0.70 REF 0.028 REF
b 0.30 0.35 0.40 0.012 0.014 0.016
c 0.10 0.18 0.25 0.004 0.007 0.010
D 1.80 2.10 2.20 0.071 0.083 0.087
b E 1.15 1.24 1.35 0.045 0.049 0.053
e 1.20 1.30 1.40 0.047 0.051 0.055
e e1 0.65 BSC 0.026 BSC
L 0.20 0.38 0.56 0.008 0.015 0.022
HE 2.00 2.10 2.40 0.079 0.083 0.095

STYLE 3:
A c PIN 1. BASE
A2
2. EMITTER
3. COLLECTOR
0.05 (0.002) L
A1

SOLDERING FOOTPRINT*
0.65
0.65 0.025
0.025

1.9
0.075

0.9
0.035

0.7
0.028
SCALE 10:1 (inches
mm )

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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