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Bas40 04LT1 D 104716

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BAS40-04LT1G,

SBAS40-04LT1G

Dual Series
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low www.onsemi.com
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited. 40 VOLTS
Features SCHOTTKY BARRIER DIODES
• Extremely Fast Switching Speed
• Low Forward Voltage
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS SOT−23 (TO−236)
CASE 318
Compliant STYLE 11

MAXIMUM RATINGS ANODE CATHODE


Rating Symbol Value Unit 1 2
3
Reverse Voltage VR 40 V
CATHODE/ANODE
Forward Power Dissipation PF
@ TA = 25°C 225 mW MARKING DIAGRAM
Derate above 25°C 1.8 mW/°C
Operating Junction and Storage TJ, Tstg −55 to +150 °C
Temperature Range
CB MG
Forward Continuous Current IFM 120 mA G

Single Forward Current IFSM mA 1


tv1s 200
t v 10 ms 600 CB = Specific Device Code
M = Date Code*
Thermal Resistance (Note 1) RqJA 508 °C/W
G = Pb−Free Package
Junction−to−Ambient (Note 2) 311
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not *Date Code orientation and/or overbar may
be assumed, damage may occur and reliability may be affected. vary depending upon manufacturing location.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
ORDERING INFORMATION
Device Package Shipping†
BAS40−04LT1G SOT−23 3,000 /
(Pb−Free) Tape & Reel
SBAS40−04LT1G SOT−23 3,000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 1997 1 Publication Order Number:


March, 2018 − Rev. 13 BAS40−04LT1/D
BAS40−04LT1G, SBAS40−04LT1G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)


Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage V(BR)R V
(IR = 10 mA) 40 −

Total Capacitance CT pF
(VR = 1.0 V, f = 1.0 MHz) − 5.0

Reverse Leakage IR mA
(VR = 25 V) − 1.0

Forward Voltage VF mV
(IF = 1.0 mA) − 380

Forward Voltage VF mV
(IF = 10 mA) − 500

Forward Voltage VF V
(IF = 40 mA) − 1.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

100 100
TA = 150°C
IR , REVERSE CURRENT (μA)
125°C
IF, FORWARD CURRENT (mA)

10

10 85°C
1.0

150°C
0.1
1.0 125°C
85°C
0.01 25°C
25°C
-40°C -55°C
0.1 0.001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 5.0 10 15 20 25
VR, REVERSE VOLTAGE (VOLTS)
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse
Voltage

3.5

3.0
C T, CAPACITANCE (pF)

2.5

2.0

1.5

1.0

0.5

0
0 5.0 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Capacitance

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2
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
3 THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
E HE T PROTRUSIONS, OR GATE BURRS.
1 2
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b A1 0.01 0.06 0.10 0.000 0.002 0.004
L1 b 0.37 0.44 0.50 0.015 0.017 0.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
L1 0.35 0.54 0.69 0.014 0.021 0.027
A HE 2.10 2.40 2.64 0.083 0.094 0.104
T 0° −−− 10 ° 0° −−− 10°
A1 SIDE VIEW SEE VIEW C c
GENERIC
END VIEW
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT XXXMG
G
1
3X
2.90 0.90 XXX = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
3X 0.80 0.95 device data sheet for actual part marking.
PITCH Pb−Free indicator, “G” or microdot “ G”,
DIMENSIONS: MILLIMETERS may or may not be present.

STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:


CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE
2. EMITTER 2. BASE 2. NO CONNECTION
3. COLLECTOR 3. COLLECTOR 3. CATHODE

STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:
PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE
2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE
3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE

STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE
2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE
3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE

STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:
PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE
2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE
3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION

STYLE 27: STYLE 28:


PIN 1. CATHODE PIN 1. ANODE
2. CATHODE 2. ANODE
3. CATHODE 3. ANODE

DOCUMENT NUMBER: 98ASB42226B Electronic versions are uncontrolled except when


accessed directly from the Document Repository. Printed
STATUS: ON SEMICONDUCTOR STANDARD versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002 http://onsemi.com Case Outline Number:
October, DESCRIPTION:
2002 − Rev. 0 SOT−23 (TO−236) 1 PAGE 1 OFXXX2
DOCUMENT NUMBER:
98ASB42226B

PAGE 2 OF 2

ISSUE REVISION DATE


AJ ADDED STYLE 27. REQ. BY P. LEM. 07 JUL 2004
AK OBSOLETED −09 VERSION. REQ. BY D. TRUHITTE. 14 SEP 2004
AL ADDED NOMINAL VALUES AND UPDATED GENERIC MARKING DIAGRAM. REQ. 27 MAY 2005
BY HONG XIAO.
AM REDREW LEAD SIDE VIEW. REQ BY DARRELL TRUHITTE. 26 AUG 2005
AN REINTRODUCED LABELS FOR DIMENSION C. REQ. BY D. TRUHITTE. 14 OCT 2005
AP ADDED THETA DEGREE VALUES TO DIMENSION TABLE. REQ. BY D. TRUHITTE. 17 NOV 2009
AR MODIFIED DIMENSIONS C AND L. REQ. BY M. YOU. 10 OCT 2016
AS ADDED STYLE 28. REQ. BY E. ESTILLER. 30 JAN 2018

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© Semiconductor Components Industries, LLC, 2018 Case Outline Number:


January, 2018 − Rev. AS 318
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BAS40-04LT1 SBAS40-04LT1G

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