High Voltage Transistor

PNP Silicon

BSS63LT1G,
NSVBSS63LT1G
Features
• NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable COLLECTOR
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
Rating Symbol Value Unit 2
EMITTER
Collector −Emitter Voltage VCEO −100 Vdc
Collector −Emitter Voltage VCER Vdc
RBE = 10 kW −110
3
Collector Current − Continuous IC −100 mAdc

THERMAL CHARACTERISTICS 1
2
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board, PD mW SOT−23
(Note 1) TA = 25°C 225 CASE 318
Derate above 25°C 1.8 mW/°C STYLE 6

Thermal Resistance Junction−to−Ambient RqJA 556 °C/W

Total Device Dissipation PD mW MARKING DIAGRAM
Alumina Substrate, (Note 2)
TA = 25°C 300 mW/°C
Derate above 25°C 2.4
BM M G
Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W G
Junction and Storage Temperature TJ, Tstg −55 to °C
+150
Stresses exceeding those listed in the Maximum Ratings table may damage the BM = Device Code
device. If any of these limits are exceeded, device functionality should not be M = Date Code*
assumed, damage may occur and reliability may be affected. G = Pb−Free Package
1. FR−5 = 1.0 x 0.75 x 0.062 in. (Note: Microdot may be in either location)
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.

ORDERING INFORMATION

Device Package Shipping†

BSS63LT1G SOT−23 3000 / Tape & Reel

(Pb−free)
NSVBSS63LT1G SOT−23 3000 / Tape & Reel
(Pb−free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 1994 1 Publication Order Number:

February, 2021 − Rev. 9 BSS63LT1/D
 BSS63LT1G, NSVBSS63LT1G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage V(BR)CEO Vdc
(IC = −100 mAdc) −100 − −

Collector −Emitter Breakdown Voltage V(BR)CER Vdc

(IC = −10 mAdc, IE = 0, RBE = 10 kW) −110 − −

Collector −Base Breakdown Voltage V(BR)CBO Vdc

(IE = −10 mAdc, IE = 0) −110 − −

Emitter −Base Breakdown Voltage V(BR)EBO Vdc

(IE = −10 mAdc) −6.0 − −

Collector Cutoff Current ICBO nAdc

(VCB = −90 Vdc, IE = 0) − − −100

Collector Cutoff Current ICER mAdc

(VCE = −110 Vdc, RBE = 10 kW) − − −10

Emitter Cutoff Current IEBO nAdc

(VEB = −6.0 Vdc, IC = 0) − − −200

ON CHARACTERISTICS
DC Current Gain hFE −
(IC = −10 mAdc, VCE = −1.0 Vdc) 30 − −
(IC = −25 mAdc, VCE = −1.0 Vdc) 30 − −
Collector −Emitter Saturation Voltage VCE(sat) mVdc
(IC = −25 mAdc, IB = −2.5 mAdc) − − −250

Base −Emitter Saturation Voltage VBE(sat) mVdc

(IC = −25 mAdc, IB = −2.5 mAdc) − − −900

SMALL− SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product fT MHz
(IC = −25 mAdc, VCE = −5.0 Vdc, f = 20 MHz) 50 95 −

Case Capacitance CC pF
(IE = IC = 0, VCB = −10 Vdc, f = 1.0 MHz) − − 20

Noise Figure NF dB
(IC = −0.2 mA, VCE = −5.0 Vdc, Rg = 2 kW, f = 1.0 kHz, BW = 200 Hz) − − 10

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

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 BSS63LT1G, NSVBSS63LT1G

TYPICAL CHARACTERISTICS

1000 1
VCE = −5 V IC/IB = 10

VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
150°C
hFE, DC CURRENT GAIN

25°C

−55°C
100 0.1

150°C 25°C

−55°C
10 0.01
0.01 0.1 1 10 100 1000 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage
vs. Collector Current

1.1 1.0
VBE(sat), BASE−EMITTER SATURATION

VBE(sat), BASE−EMITTER SATURATION

1.0 IC/IB = 10 VCE = −5 V
0.9
0.9 −55°C
−55°C 0.8
0.8
0.7
VOLTAGE (V)

VOLTAGE (V)

0.7 25°C 25°C

0.6 0.6
0.5 0.5
150°C
0.4
0.4 150°C
0.3
0.2 0.3

0.1 0.2
1 10 100 1000 1 10 100 1000
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Base−Emitter Saturation Voltage vs. Figure 4. Base−Emitter Voltage vs. Collector
Collector Current Current
qVBE, TEMPERATURE COEFFICIENT (mV/°C)

2.6 1.0
VCE, COLLECTOR−EMITTER VOLTAGE (V)

IC/IB = 10 0.9 TA = 25°C

2.4
TA = −55°C to 150°C 0.8
2.2
0.7
2.0 0.6
1.8 0.5
0.4
1.6
50 mA
0.3
1.4 20 mA 100 mA IC = 200 mA
0.2
1.2 0.1
IC = 10 mA
1.0 0
0.1 1 10 100 1000 0.01 0.1 1 10 100
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)
Figure 5. Base−Emitter Temperature Figure 6. Collector Saturation Region
Coefficient

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 BSS63LT1G, NSVBSS63LT1G

TYPICAL CHARACTERISTICS

100 1000
Cibo TJ = 25°C VCE = −5 V

CURRENT−GAIN BANDWIDTH
TJ = 25°C
C, CAPACITANCE (pF)

PRODUCT (MHz)
100
Cobo
10

10

1 1
0.1 0.2 0.4 0.6 1 2 4 6 10 20 40 60 100 0.1 0.2 0.5 1 2 5 10 20 50 100
VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA)
Figure 7. Capacitance Figure 8. Current−Gain Bandwidth Product

1000
IC, COLLECTOR CURRENT (mA)

10 ms

100 100 ms

1s
10

Single Pulse Test at TA = 25°C

0.1
0.1 1 10 100 1000
VCE, COLLECTOR EMITTER VOLTAGE (V)

Figure 9. Safe Operating Area

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
3 THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
E HE T PROTRUSIONS, OR GATE BURRS.
1 2
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b A1 0.01 0.06 0.10 0.000 0.002 0.004
L1 b 0.37 0.44 0.50 0.015 0.017 0.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
L1 0.35 0.54 0.69 0.014 0.021 0.027
A HE 2.10 2.40 2.64 0.083 0.094 0.104
T 0° −−− 10 ° 0° −−− 10°
A1 SIDE VIEW SEE VIEW C c
GENERIC
END VIEW
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT XXXMG
G
1
3X
2.90 0.90 XXX = Specific Device Code
M = Date Code
G = Pb−Free Package

*This information is generic. Please refer to

3X 0.80 0.95 device data sheet for actual part marking.
PITCH Pb−Free indicator, “G” or microdot “ G”,
DIMENSIONS: MILLIMETERS may or may not be present.

STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:

CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE
2. EMITTER 2. BASE 2. NO CONNECTION
3. COLLECTOR 3. COLLECTOR 3. CATHODE

STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:
PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE
2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE
3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE

STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE
2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE
3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE

STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:
PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE
2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE
3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION

STYLE 27: STYLE 28:

PIN 1. CATHODE PIN 1. ANODE
2. CATHODE 2. ANODE
3. CATHODE 3. ANODE

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1

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