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    R17 Edc

    Uploaded by

    mounika.avirineni
    This document is an exam paper for an electronics course. It contains 10 questions across 5 sections related to electronic devices and circuits. The questions cover topics like diode characteristics, rectifiers, transistor configurations, biasing techniques, and FET operation.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    R17 Edc

    Uploaded by

    mounika.avirineni
    6 views2 pages
    This document is an exam paper for an electronics course. It contains 10 questions across 5 sections related to electronic devices and circuits. The questions cover topics like diode characteristics, rectifiers, transistor configurations, biasing techniques, and FET operation.

    Original Title

    R17_EDC

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    © © All Rights Reserved

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    This document is an exam paper for an electronics course. It contains 10 questions across 5 sections related to electronic devices and circuits. The questions cover topics like diode characteristics, rectifiers, transistor configurations, biasing techniques, and FET operation.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    6 views2 pages

    R17 Edc

    Uploaded by

    mounika.avirineni
    This document is an exam paper for an electronics course. It contains 10 questions across 5 sections related to electronic devices and circuits. The questions cover topics like diode characteristics, rectifiers, transistor configurations, biasing techniques, and FET operation.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 2

    Code No: R17A0401

    R17
    MALLA REDDY COLLEGE OF ENGINEERING & TECHNOLOGY
    (Autonomous Institution – UGC, Govt. of India)
    II B.Tech I Semester Supplementary Examinations, April 2023
    Electronic Devices and Circuits
    (EEE, ECE, CSE & IT)
    Roll No

    Time: 3 hours Max. Marks: 70


    Note: This question paper Consists of 5 Sections. Answer FIVE Questions, Choosing ONE
    Question from each SECTION and each Question carries 14 marks.
    ***
    SECTION-I
    1 A The reverse saturation current of a germanium diode is 100µA at room [7M]
    temperature of 270 C. Calculate the current in forward biased condition, if
    forward bias voltage is 0.2V at room temperature. If temperature is increased
    by 200 C , calculate the reverse saturation current and the forward current for
    same forward voltage at new temperature
    B Explain the operation of Zener diode and explain how it act as voltage [7M]
    regulator in detail.
    OR
    2 A (i) Compare Zener and Avalanche break downs [7M]
    (ii) Determine the value of forward current in the case of p-n junction
    silicon diode with I0 = 10 µA, Vf = 0.8V , T= 300 K.
    B Explain in detail about the forward and reverse biased conditions of p-n [7M]
    junction diode and also explain about the estimation of static and dynamic
    resistances.
    SECTION-II
    3 A Derive the expression for the following parameters [7M]
    (i)IDC (ii) EDC (iii) Irms (iv) efficiency (v) ripple factor
    of a Full-wave-rectifier.
    B A 230 V, 50Hz voltage is applied to the primary of a 3:1 step down [7M]
    transformer used in a Half wave rectifier having a load of 10KΩ. If the diode
    resistance and the secondary coil resistance are 75 Ω and 10 Ω, determine
    maximum, average and RMS values of current , DC voltage across the load,
    efficiency, ripple factor.

    OR
    4 A Derive the expression for the following parameters [6M]
    (i)IDC (ii) EDC (iii) Irms (iv) efficiency (v) ripple factor
    of a Half Wave rectifier.
    B A centre tapped full wave rectifier circuit the RMS half secondary voltage is
    9V assuming ideal diodes and load resistance RL = 1KΩ. Calculate
    i) Peak Curent [2M]
    ii) DC load Voltage [2M]
    iii) Irms [2M]
    iv) ripple factor [2M]

    Page 1 of 2
    SECTION-III
    5 A For a certain transistor IC = 5.255mA, IB =100 µA and ICBO = 5 µA [7M]
    (i) calculate α, β and IE.
    (ii) Detrmine the new level of IB required to make IC =15 mA
    B Explain in detail about the operation of Transistor in CB configuration with [7M]
    suitable diagrams .
    OR
    6 A For a single-stage Transistor Amplifier, RS = 2 kΩ and RL = 5 kΩ. The h- [7M]
    parameter values are hfb = 0.98, hib = 21Ω, hrb = 2.9*10-4 and hob = 0.49
    µA/V. Find AI, AV, Ri and Ro for CB transistor configuration
    B Differentiate CB, CE, CC configurations on indicating all parameters [7M]
    necessary and with suitable basic diagrams of configurations.
    SECTION-IV
    7 A Define biasing? Draw the Self bias circuit and obtain the expression for the [7M]
    stability factor?
    B [7M]

    For circuit shown is subjected to temperature change ; and the value of β =


    100 at 250 C and β = 125 at 75 0 C determine the percentage change in the
    Q-point values over the temperature range .

    OR
    8 A What is the need for biasing and explain the DC and AC load line analysis [7M]
    for Q- point identification
    B Design a collector to base bias circuit using silicon transistor to achieve a [7M]
    stability factor of 20, with the following specifications:
    VCC = 16V, VBE = 0.7V, VCEQ = 8V, Icq=4ma & β=50
    SECTION-V
    9 A Explain the construction and operation of JFET with its characteristics and [7M]
    explain the different regions in VI characteristics?
    B Analyze the operation of FET with fixed bias and derive the values of Input [7M]
    impedance, output impedance, voltage gain.

    OR
    10 A Explain the construction & operation of a n-channel MOSFET in [7M]
    enhancement and depletion modes with the help of static drain characteristics
    and transfer characteristics?
    B Compare BJT and FET and list our their advantages and disadvantages. [7M]
    ***

    Page 2 of 2

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