Freescale Semiconductor Document Number: MRF6VP11KH

Technical Data Rev. 0, 1/2008

RF Power Field Effect Transistor

N - Channel Enhancement - Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to
MRF6VP11KHR6
150 MHz. Device is unmatched and is suitable for use in industrial, medical
and scientific applications.
• Typical Pulsed Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA,
Pout = 1000 Watts Peak, Pulse Width = 100 μsec, Duty Cycle = 20%
Power Gain — 26 dB 10 - 150 MHz, 1000 W, 50 V
Drain Efficiency — 71% LATERAL N - CHANNEL
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak BROADBAND
Power RF POWER MOSFET
Features
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Excellent Thermal Stability
• Designed for Push - Pull Operation
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
CASE 375D - 05, STYLE 1
NI - 1230

PART IS PUSH - PULL

RFinA/VGSA 3 1 RFoutA/VDSA

RFinB/VGSB 4 2 RFoutB/VDSB

(Top View)

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating Symbol Value Unit
Drain - Source Voltage VDSS - 0.5, +110 Vdc
Gate - Source Voltage VGS - 6.0, +10 Vdc
Storage Temperature Range Tstg - 65 to +150 °C
Case Operating Temperature TC 150 °C
Operating Junction Temperature TJ 200 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value (1,2) Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle RθJC 0.03 °C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.

© Freescale Semiconductor, Inc., 2008. All rights reserved. MRF6VP11KHR6

RF Device Data
Freescale Semiconductor 1
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22 - A114) 2 (Minimum)
Machine Model (per EIA/JESD22 - A115) A (Minimum)
Charge Device Model (per JESD22 - C101) IV (Minimum)

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
Off Characteristics (1)

Gate - Source Leakage Current IGSS — — 10 μAdc

(VGS = 5 Vdc, VDS = 0 Vdc)
Drain - Source Breakdown Voltage V(BR)DSS 110 — — Vdc
(ID = 300 mA, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current IDSS — — 100 μAdc
(VDS = 50 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current IDSS — — 5 mA
(VDS = 100 Vdc, VGS = 0 Vdc)

On Characteristics
Gate Threshold Voltage (1) VGS(th) 1 1.63 3 Vdc
(VDS = 10 Vdc, ID = 1600 μAdc)
Gate Quiescent Voltage (2) VGS(Q) 1.5 2.2 3.5 Vdc
(VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test)
Drain - Source On - Voltage (1) VDS(on) — 0.28 — Vdc
(VGS = 10 Vdc, ID = 4 Adc)

Dynamic Characteristics (1)

Reverse Transfer Capacitance Crss — 3.3 — pF
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance Coss — 147 — pF
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance Ciss — 506 — pF
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)

Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 130 MHz,
100 μsec Pulse Width, 20% Duty Cycle
Power Gain Gps 24 26 28 dB
Drain Efficiency ηD 69 71 — %
Input Return Loss IRL — - 16 -9 dB
1. Each side of device measured separately.
2. Measurement made with device in push - pull configuration.

MRF6VP11KHR6
RF Device Data
2 Freescale Semiconductor
 R2
VBIAS B1 L1 R1 VSUPPLY

+ + + L3 + + +
C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C13 C14 C15 C16 C17 C18 C19 C20

C21
Z8 Z10 Z12 Z14 Z16
Z4 Z6
RF RF
INPUT OUTPUT
Z1 Z2 Z3 Z18 Z19
DUT C23 C24 C25
J1 J2
L2 Z5 Z7
C12 Z9 Z11 Z13 Z15 Z17 C26

T1 T2

C22

Z1 0.175″ x 0.082″ Microstrip Z14, Z15 0.116″ x 0.253″ Microstrip

Z2* 1.461″ x 0.082″ Microstrip Z16*, Z17* 0.035″ x 0.253″ Microstrip
Z3* 0.080″ x 0.082″ Microstrip Z18 0.275″ x 0.082″ Microstrip
Z4, Z5 0.133″ x 0.193″ Microstrip Z19 0.845″ x 0.082″ Microstrip
Z6, Z7, Z8, Z9 0.500″ x 0.518″ Microstrip PCB Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Z10, Z11 0.102″ x 0.253″ Microstrip *Line length includes microstrip bends.
Z12, Z13 0.206″ x 0.253″ Microstrip

Figure 2. MRF6VP11KHR6 Test Circuit Schematic

Table 5. MRF6VP11KHR6 Test Circuit Component Designations and Values

Part Description Part Number Manufacturer
B1 95 Ω, 100 MHz Long Ferrite Bead 2743021447 Fair - Rite
C1 47 μF, 50 V Electrolytic Capacitor 476KXM050M Illinois Cap
C2 22 μF, 35 V Tantalum Capacitor T491X226K035AT Kemet
C3 10 μF, 35 V Tantalum Capacitor T491D106K035AT Kemet
C4, C9, C17 10K pF Chip Capacitors ATC200B103KT50XT ATC
C5, C16 20K pF Chip Capacitors ATC200B203KT50XT ATC
C6, C15 0.1 μF, 50 V Chip Capacitors CDR33BX104AKYS Kemet
C7 2.2 μF, 50 V Chip Capacitor C1825C225J5RAC Kemet
C8 0.22 μF, 100 V Chip Capacitor C1825C223K1GAC Kemet
C10, C11, C13, C14 1000 pF Chip Capacitors ATC100B102JT50XT ATC
C12 18 pF Chip Capacitor ATC100B180JT500XT ATC
C18, C19, C20 470 μF, 63 V Electrolytic Capacitors EKME630ELL471MK25S Multicomp
C21, C22 47 pF Chip Capacitors ATC100B470JT500XT ATC
C23 75 pF Chip Capacitor ATC100B750JT500XT ATC
C24, C25 100 pF Chip Capacitors ATC100B101JT500XT ATC
C26 33 pF Chip Capacitor ATC100B330JT500XT ATC
J1, J2 Jumpers from PCB to T1 and T2 Copper Foil
L1 82 nH Inductor 1812SMS - 82NJLC CoilCraft
L2 47 nH Inductor 1812SMS - 47NJLC CoilCraft
L3* 10 Turn, #18AWG Inductor, Handwound Copper Wire
R1 1 KΩ, 1/4 W Chip Resistor PTF561K0000BYEK Vishay
R2 20 Ω, 3 W Chip Resistor 5093NW20R00J Vishay
T1 Balun TUI - 9 Comm Concepts
T2 Balun TUO - 4 Comm Concepts
*L3 is wrapped around R2.

MRF6VP11KHR6
RF Device Data
Freescale Semiconductor 3
 C1 C19

C4 C17 C18
B1 C5 C16
C6 C15

C2 C3 L1 C20

C7 C14 L3, R2*

C8 R1
C9 C13
C21
C10 T2
C11 T1
C24
J1 C25 J2
C23

CUT OUT AREA

L2
C12 C22
C26

MRF6VP11KH
Rev. 3

* L3 is wrapped around R2.

Figure 3. MRF6VP11KHR6 Test Circuit Component Layout

MRF6VP11KHR6
RF Device Data
4 Freescale Semiconductor
 TYPICAL CHARACTERISTICS

1000 100
Ciss
TJ = 200°C

ID, DRAIN CURRENT (AMPS)

Coss TJ = 175°C
C, CAPACITANCE (pF)

100
TJ = 150°C
Measured with ±30 mV(rms)ac @ 1 MHz 10
VGS = 0 Vdc
Crss
10

TC = 25°C
1 1
0 10 20 30 40 50 1 10 100 200
VDS, DRAIN−SOURCE VOLTAGE (VOLTS) VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain - Source Voltage Figure 5. DC Safe Operating Area

27 80 65
Ideal
64 P3dB = 61.23 dBm (1327.39 W)
26 70
63
ηD, DRAIN EFFICIENCY (%)

Pout, OUTPUT POWER (dBm)

Gps
Gps, POWER GAIN (dB)

25 60 P1dB = 60.57 dBm (1140.24 W)

62
24 50 61
Actual
23 40 60
ηD
59
22 30
58
21 VDD = 50 Vdc, IDQ = 150 mA, f = 130 MHz 20 VDD = 50 Vdc, IDQ = 150 mA, f = 130 MHz
57
Pulse Width = 100 μsec, Duty Cycle = 20% Pulse Width = 100 μsec, Duty Cycle = 20%
20 10 56
10 100 1000 2000 30 31 32 33 34 35 36 37 38 39
Pout, OUTPUT POWER (WATTS) PULSED Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency Figure 7. Pulsed Output Power versus
versus Output Power Input Power

32 28
IDQ = 6000 mA
3600 mA
28 24
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)

1500 mA
750 mA
375 mA
24 20
50 V
45 V
35 V 40 V
150 mA VDD = 30 V
20 16
IDQ = 150 mA, f = 130 MHz
VDD = 50 Vdc, f = 130 MHz Pulse Width = 100 μsec
Pulse Width = 100 μsec, Duty Cycle = 20% Duty Cycle = 20%
16 12
10 100 1000 2000 0 200 400 600 800 1000 1200 1400 1600
Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus Figure 9. Pulsed Power Gain versus
Output Power Output Power

MRF6VP11KHR6
RF Device Data
Freescale Semiconductor 5
 TYPICAL CHARACTERISTICS

65 27 80
TC = −30_C
26 70
TC = −30_C
Pout, OUTPUT POWER (dBm)

ηD, DRAIN EFFICIENCY (%)

60 25_C

Gps, POWER GAIN (dB)

25 60
25_C 85_C
85_C
24 50
55 Gps
23 40
VDD = 50 Vdc ηD
VDD = 50 Vdc
IDQ = 150 mA 22 IDQ = 150 mA 30
50
f = 130 MHz f = 130 MHz
Pulse Width = 100 μsec 21 Pulse Width = 100 μsec 20
Duty Cycle = 20% Duty Cycle = 20%
45 20 10
20 25 30 35 40 45 10 100 1000 2000
Pin, INPUT POWER (dBm) PULSED Pout, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Output Power versus Figure 11. Pulsed Power Gain and Drain Efficiency
Input Power versus Output Power

107

106
MTTF (HOURS)

105

104
90 110 130 150 170 190 210 230 250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 100 μsec,
Duty Cycle = 20%, and ηD = 71%.
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.

Figure 12. MTTF versus Junction Temperature

MRF6VP11KHR6
RF Device Data
6 Freescale Semiconductor
 f = 130 MHz

Zsource

Zo = 10 Ω

f = 130 MHz

Zload

VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak

f Zsource Zload
MHz W W
130 1.58 + j6.47 4.6 + j1.85
Zsource = Test circuit impedance as measured from
gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

Input Device Output

Matching Under Matching
Network Test Network

Z Z
source load

Figure 13. Series Equivalent Source and Load Impedance

MRF6VP11KHR6
RF Device Data
Freescale Semiconductor 7
 PACKAGE DIMENSIONS

MRF6VP11KHR6
RF Device Data
8 Freescale Semiconductor
 MRF6VP11KHR6
RF Device Data
Freescale Semiconductor 9
 PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 Jan. 2008 • Initial Release of Data Sheet

MRF6VP11KHR6
RF Device Data
10 Freescale Semiconductor
How to Reach Us:
Home Page:
www.freescale.com

Web Support:
http://www.freescale.com/support

USA/Europe or Locations Not Listed:

Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
+1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
www.freescale.com/support

Europe, Middle East, and Africa:

Freescale Halbleiter Deutschland GmbH
Technical Information Center Information in this document is provided solely to enable system and software
Schatzbogen 7 implementers to use Freescale Semiconductor products. There are no express or
81829 Muenchen, Germany implied copyright licenses granted hereunder to design or fabricate any integrated
+44 1296 380 456 (English)
circuits or integrated circuits based on the information in this document.
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French) Freescale Semiconductor reserves the right to make changes without further notice to
www.freescale.com/support any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Japan: Freescale Semiconductor assume any liability arising out of the application or use of
Freescale Semiconductor Japan Ltd. any product or circuit, and specifically disclaims any and all liability, including without
Headquarters limitation consequential or incidental damages. “Typical” parameters that may be
ARCO Tower 15F
provided in Freescale Semiconductor data sheets and/or specifications can and do
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064 vary in different applications and actual performance may vary over time. All operating
Japan parameters, including “Typicals”, must be validated for each customer application by
0120 191014 or +81 3 5437 9125 customer’s technical experts. Freescale Semiconductor does not convey any license
support.japan@freescale.com under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
Asia/Pacific: surgical implant into the body, or other applications intended to support or sustain life,
Freescale Semiconductor Hong Kong Ltd. or for any other application in which the failure of the Freescale Semiconductor product
Technical Information Center
could create a situation where personal injury or death may occur. Should Buyer
2 Dai King Street
Tai Po Industrial Estate purchase or use Freescale Semiconductor products for any such unintended or
Tai Po, N.T., Hong Kong unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
+800 2666 8080 and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
support.asia@freescale.com claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
For Literature Requests Only: unintended or unauthorized use, even if such claim alleges that Freescale
Freescale Semiconductor Literature Distribution Center Semiconductor was negligent regarding the design or manufacture of the part.
P.O. Box 5405
Denver, Colorado 80217
1 - 800 - 441 - 2447 or 303 - 675 - 2140 Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
Fax: 303 - 675 - 2150 All other product or service names are the property of their respective owners.
LDCForFreescaleSemiconductor@hibbertgroup.com © Freescale Semiconductor, Inc. 2008. All rights reserved.

MRF6VP11KHR6
RF DeviceNumber:
Document Data MRF6VP11KH
Rev. 0, 1/2008
Freescale Semiconductor 11