Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
0% found this document useful (0 votes)
41 views3 pages

What Is F-RAM: Micron DDR3

Download as docx, pdf, or txt
Download as docx, pdf, or txt
Download as docx, pdf, or txt
You are on page 1/ 3

What is F-RAM

A primer on semiconductor memory


F-RAM (ferroelectric random access memory), pioneered by Ramtron International Corp., offers a unique set of features relative to other semiconductor technologies. Established semiconductor memories can be divided into two categories: volatile and nonvolatile. Volatile memory includes SRAM (static random access memory) and DRAM (dynamic random access memory), among others. RAM type devices are easy to use, offer high performance, but they share a common vulnerability: stored memory is lost when the power supply is removed. The F-RAM chip contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O 3], commonly referred to as PZT (Figure 1). The Zr/Ti atoms in the PZT change polarity in an electric field, thereby producing a binary switch. Unlike RAM devices, F-RAM retains its data memory when power is shut off or interrupted, due to the PZT crystal maintaining polarity. This unique property makes F-RAM a low power, nonvolatile memory. Like F-RAM, ROM (read only memory) is a nonvolatile memory that does not lose its data content when power is removed. Newer generation ROM, like EEPROM (electrically erasable programmable read only memory) and flash memory, can be erased and re-programmed multiple times, but they require high voltage and write very slowly. ROM-based technologies eventually wear out (in as little as 1E5 cycles), making them unsuitable for high-endurance industrial applications. F-RAM has 10,000 times greater endurance and 3,000 times less power consumption than a typical serial EEPROM device, and nearly 500 times the write speed (Figure 2). F-RAM combines the best of RAM and ROM into a single package that outperforms other nonvolatile memories with remarkably fast writes, high endurance and ultra-low power consumption.

Figure 1: PZT crystal structure

Figure 2: Write speed comparison *At 25 MHz, F-RAM writes 488 times faster than comparable EEPROM device.

Micron DDR3 Industry-Leading Performance and Support


DDR3 is the next-generation, high-performance solution for CPU systemsit pushes the envelope in key areas like power consumption, signaling speeds, and bandwidth, bringing new levels of performance to desktop, notebook, and server computing. DDR3 supports data rates of 1066 to 1600 MT/s, with clock frequencies of 533 to 800 MHz, respectivelyeffectively doubling the speed of DDR2. DDR3's standard 1.5V supply voltage cuts power consumption by up to 30% over DDR2. DDR3 also brings new levels of power efficiencyour standard 1.5V supply voltage cuts power use by up to 30% over DDR2, while our 1.35V parts shave another 20% off standard 1.5V consumption. When youre ready to make a move to DDR3, well be here to help. As an industry leader we are expertly equipped to help you sort through the technical details and recommend the best DDR3 solution for your application.

DDR3 SDRAM Part Catalogs and Documentation

DDR3 SDRAM Part Catalog 1.35V DDR3 Part Catalog DDR3 SDRAM Technical Notes Balancing Power and Performance for Tablet and Thin-Client Computing Tablets and thin-clients are changing the landscape of computingand memory requirements, too. These powerful, highly mobile personal computing devices walk a fine line between memory-performance needs and battery-life limits, not to mention space constraints. Our new 1.35V DDR3Lm specifically targets the light-client market with an optimal combination of high performance, low power usage (with tight IDD6 specs and TCSR enablement), cost efficiency, and footprint size (x32 options)the best of LPDDRx and DDRx technologies, blended into one. Feeding Memory-Hungry Systems If your new hardware design is primed for higher performance, we've got you covered. Our DDR3 is ready for the memory demands of nextgeneration systems. The increased bandwidth is significant, with speeds up to 1600 Mb/s. At peak performance, the data transfer rate is equivalent to transferring a 100,000-page document in about one second.

RLDRAM Memory: Unparalleled Bandwidth and Low Latency


Enabling Sustainable High Bandwidth Our reduced-latency DRAM (RLDRAM memory) is a high-performance, high-density memory solution that offers fast SRAM-like random access and outpaces even leading-edge DDR3 for sustained high bandwidth. RLDRAM uses innovative circuit design to minimize the time between the beginning of an access cycle and the instant that the first data is available. Ultra-low bus turnaround time enables higher sustainable bandwidth with near-term balanced read-to-write ratios. The bank-scheduled auto refresh feature improves bandwidth by enabling the controller to hide REFRESH commands behind normal operations. These traits make RLDRAM an ideal choice for 10GbE, 40GbE, and 100GbE packet buffering and inspections, and its supported on a wide variety of FPGAs and network processor solutions.

RLDRAM 2 and 3 Part Catalog and Documentation

RLDRAM 2 and 3 Memory Part Catalog RLDRAM Technical Notes RLDRAM 3Meet the New Generation of Our Best Low-Latency Memory Now in its third generation, our best low-latency memory solution gets even better, offering a further increase in density and speed, minimized latency, and reduced power consumption for higher-performing networking applications.

Ultra-high data rate and lower DRAM random access latency: <10ns tRC versus 4652ns for DDR3. Multibank WRITE: Enables random read accesses with 2.5ns or less tRC. Minimal bus turnaround delay: Read-write-read delay of one IDLE cycle versus 15 or more for DDR3. No tFAW, tRRD: No IDLE cycles between cyclic bank accesses versus tFAW of 27 or more cycles for DDR3. Minimum burst lengths: BL2, BL4, and BL8 allow flexible memory access and full data-bus utilization. Weve deliberately designed RLDRAM 3 to be easy to implement and help you better leverage your existing RLDRAM2 and DDR3 PHY. For further technical information or sample requests, please contact us. RLDRAM 2Already Designing in RLDRAM 2? Weve Got Upgrades for You, Too. The introduction of RLDRAM 3 doesnt mean current-generation RLDRAM 2 will be left behind. In fact, our RLDRAM 2 products are migrating to a more advanced 50nm process technology, reducing power consumption across the board and upgrading the current 288Mb device to 1066 Mb/s and 15ns tRC. Weve committed to supporting and improving RLDRAM 2 for many years to come.

576Mb RL2 shrink (SIO/CIO) Main operating currents reduced by 33% to >40% 288Mb RL2 shrink (CIO) Main operating currents reduced by 25% to >40% 288Mb RL2 shrink (SIO) Main operating currents reduced by 10% to >25%

All You Need to Know About Mobile LPDRAM


Consumers want more features and functionality from their mobile devices, and you're expected to design it all in with less power, less time, and less space. We understand those design challenges and offer a wide range of Mobile low-power DRAM parts to help you meet them.Our Mobile LPDRAM has the low power consumption, high performance, and wide temperature ranges you need to give your customers greater mobility and longer battery life.

Mobile LPDRAM Part Catalogs and Documentation

Mobile LPDRAM Part Catalog Mobile LPDRAM Technical Notes

Dramatic Power Savings Our Mobile LPDRAM is built to consume less power without sacrificing performance. It uses a JEDEC-standard 1.8V I/O power supply1.2V for LPDDR2which enables low standby current and low self refresh and extends battery life. To further cut power consumption, Mobile LPDRAM makes use of lower Idd voltages, and we have both temperature-compensated self refresh (TCSR) and partial-array self refresh (PASR) modes on-chip to ensure you dont use up battery power when you dont need to. Design In the Fastest Mobile LPDRAM Our Mobile LPDDR was the first to deliver maximum clock speeds of 200 MHzenabling blazing-fast transfer speeds of 400 Mb/sand now our LPDDR2-1066 part is pushing the benchmark even further, to 533 MHz. Plus, the LPDDR have a low-power 1.2V I/O, so you won't bog down performance or burn up precious battery time.

Micron NAND Flash I/O Drivers and ECC Software


Designers of smaller, faster, more powerful mobile and wireless technologies choose NAND Flash memory for its high storage capacity, high performance, and low cost. For an even greater advantage, Micron offers sample NAND Flash I/O drivers and ECC software that can be used to help build a host interface to NAND memory devices. The following software packages are available for download:

NAND Flash I/O Drivers NAND Flash ECC Software Please contact your Micron sales representative for more Micron NAND Flash software offerings.

Third-Party Software Solutions


Micron also partners with 3rd party NAND software vendors to provide NAND Flash software solutions (file systems, FTL, low level driver, etc.) to our customers.

Blunk Microsystems
Blunk Microsystems - Blunk Microsystems' TargetFFS is an embedded flash file system used around the world in cell phones, set-top boxes, routers, satellites, and other demanding applications. It has a UNIX-like API with extensions for embedded programming. Its leading-edge technology includes guaranteed power-fail recovery (even for MLC NAND), read wear leveling, and early block recycles triggered by corrected bit errors. Out-of-the-box support for Microns Serial NAND.

CMX
CMX-FFS software - CMX-FFS is a small, high-performance flash file system for embedded systems developers and includes 100-percent failsafe, multiple volumes, wear-leveling, directories, boot sector support, and an ECC algorithm. It is provided with full source code, no royalties, and 180 days of free technical support and software updates.

Datalight
FlashFX Pro Software Development Kit - FlashFX Pro is a high-performance, multi-threaded flash translation layer for products running any 32-bit operating system that require real-time response from resident Flash memory. Because of its multi-threaded design, FlashFX Pro is able to offer low read latency. FlashFX Pro supports the broadest range of market-leading operating systems right out of the box.

HCC-Embedded
HCC-Embedded's extensive portfolio of file systems and flash translation layers includes high-performance, failsafe FAT systems as well as several failsafe FFS products. HCC has a system for almost any environment, from very limited to very large, for any CPU, any RTOS and any flash arrangement. HCC-Embedded focuses on reliability, performance and product suitability. All HCC products are distributed in full source form on a royaltyfree basis.

You might also like