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Tutorial 5 With Solutions

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24 views

Tutorial 5 With Solutions

Uploaded by

f20231169
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Electronic Devices

Tutorial -5
Excess Carriers

BITS Pilani, K K Birla Goa Campus


Problem 1
Consider a pure Si sample on which light of intensity 1000 W/cm2 shines (photon energy is 1.6 eV). The electron-hole
recombination time is 100 ns.
(i) Calculate the excess electron and hole densities produced by light;
(ii) Calculate the conductivity of the sample in dark and in light. The electron and hole mobilities are
µn = 1100 cm2/V.s; µp = 300 cm2/V.s
(iii) Calculate the quasi-Fermi levels for electrons and holes in the presence
of light.
absorption co coefficients = 103 cm-1

BITS Pilani, K K Birla Goa Campus


Problem 2
A bar of silicon at T = 300 K has a length of L = 0.05 cm and a cross-sectional area of A 10-5 cm2. The semiconductor is
uniformly doped with Nd = 8 x 1015 cm-3 and 𝑁𝑎 = 2 × 1015 𝑐𝑚−3 . A voltage of 10 V is applied across the length of the
material. For t < 0, the semiconductor has been uniformly illuminated with light, producing an excess carrier generation rate of
𝑔′ = 8 × 1020 𝑐𝑚−3 𝑠 −1 . The minority carrier lifetime is 𝜏𝑝0 = 5 × 10−7 𝑠. At t = 0, the light source is turned off. Determine
the current in the semiconductor as a function of time for 𝑡 ≥ 0.

BITS Pilani, K K Birla Goa Campus


Problem 3
Consider a bar of p-type silicon that is uniformly doped to a value of 𝑁𝑎 = 2 × 1016 𝑐𝑚−3 at T = 300 K. The applied electric fi
eld is zero. A light source is incident on the end of the semiconductor as shown in Figure below. The steady-state
concentration of excess carriers generated at 𝑥 = 0 𝛿𝑝 0 = 𝛿𝑛 0 = 2 × 1014 𝑐𝑚−3 . Assume the following parameters:
𝜇𝑛 = 1200 𝑐𝑚2 /𝑉𝑠, 𝜇𝑝 = 400 𝑐𝑚2 /𝑉𝑠, 𝜏𝑛0 = 10−6 𝑠, and 𝜏𝑝0 = 5 × 10−7 𝑠. Neglecting surface effects, (a) determine the
steady-state excess electron and hole concentrations as a function of distance into the semiconductor, and (b) calculate the
steady-state electron and hole diffusion current densities as a function of distance into the semiconductor.

BITS Pilani, K K Birla Goa Campus


Problem 5
Consider p-type silicon at T = 300 K doped to 𝑁𝑎 = 5 × 1014 𝑐𝑚−3 . Assume excess carriers are present and assume that
𝐸𝐹 − 𝐸𝐹𝑝 = (0.01 𝑘𝑇). (a) Does this condition correspond to low injection? Why or why not? (b) Determine 𝐸𝐹𝑛 − 𝐸𝐹𝑖

BITS Pilani, K K Birla Goa Campus


Problem 6
(a) Design a GaAs photoconductor that is 4 𝜇m thick. Assume that the material is doped at 𝑁𝑑 = 1016 𝑐𝑚−3 and has lifetime
values of 𝜏𝑛0 = 10−7 𝑠 and 𝜏𝑝0 = 5 × 10−8 𝑠. With an excitation of 𝑔′ = 1021 𝑐𝑚−3 𝑠 −1 , a photocurrent of at least 2 𝜇𝐴 is
required with an applied voltage of 2 V. (b) Repeat the design for a silicon photoconductor that has the same parameters as
given in part (a).

BITS Pilani, K K Birla Goa Campus

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