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quiz 1 solution

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shashh242
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© © All Rights Reserved
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Insthoctos' Solutisn

Imam Mohammad lbn Saud Islamic University (IMSIU)


College of Engineering
Electrical Engineering Department
Academic year: 2024/2025 (Term I)

EE223: Fundamentals of Electronic Devices

Quiz#1 (10pts)

Name: ID:

Q1:What do you expect from a material that has a low bandgap energy: (2.5 pts)

a) The material has low mobility.


b) The material is expected to be an insulator.

c) Itwill require higher energy to break down the covalent bond.


d))The material is expected to be a conductor.

Q2: As an electronic engineer, which of the following should you do to achieve a


high drift current at a low electric field: (2.5 pts)

a) Decrease the mobility of the material.


b) Increase the mobility of the material.

c) Decrease the doping concentration.


d) Reduce the temperature.

Q3: Given that silicon carries a current density of |250| 4/2 at T =300 K, and
the electron concentration varies linearly from 1017 cm- to 101 cm-³ over the
distance from 0to 14 um, calculate the diffusion constant and
mobility constant. (5
pts)

Formula Sheet
-Eg
n = BT3/2e zk
V,= J= Eq(p, t nun), D|= qD
d(x)
dx
DnDp =Vr
q =1.68x 10-19 C, V, at 300 K = 26 mV

dn
(4-o)16
Da Ja

=)
O-026

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