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    Transistor Basics - BJTS: © Bob York

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    Ankit Kumar
    BJTs are current-controlled devices Every BJT has a base, collector, and emitter the base current controls the collector current. The forward active region is where collector current varies linearly with the base current.

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    Transistor Basics - BJTS: © Bob York

    Uploaded by

    Ankit Kumar
    45 views6 pages
    BJTs are current-controlled devices Every BJT has a base, collector, and emitter the base current controls the collector current. The forward active region is where collector current varies linearly with the base current.

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    BJT Basics1

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    BJTs are current-controlled devices Every BJT has a base, collector, and emitter the base current controls the collector current. The forward active region is where collector current varies linearly with the base current.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    45 views6 pages

    Transistor Basics - BJTS: © Bob York

    Uploaded by

    Ankit Kumar
    BJTs are current-controlled devices Every BJT has a base, collector, and emitter the base current controls the collector current. The forward active region is where collector current varies linearly with the base current.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 6

    Transistor Basics - BJTs

    Bob York

    Bipolar Junction Transistors (BJTs)


    Key points: BJTs are current-controlled devices Every BJT has a base, collector, and emitter The base current controls the collector current Thereare two types of BJTS: NPN and PNP
    The use of BJTs is conceptually similar to the use of FETs with some differences in biasing and details of operation. The NPN is analogous to the N-channel FET The PNP is analogous to the P-channel FET In the forward active region the collector current varies linearly with the base current. This linear dependence simplifies bias calculations and also makes BJTs attractive for many analog circuit applications

    NPN BJT
    Collector Base Emitter Base

    PNP BJT
    Emitter

    Collector

    Ic, , mA
    5 4 3 2

    Ideal NPN CE Characteristics


    Forward active region 50 A 40 A 30 A 20 A 10 A 0 A Increasing Ib

    C B Ib E

    Ic Vce

    Forward active region:

    I c Ib
    beta is the current gain

    NPN Common-emitter (CE) configuration

    Vce, sat 0.2-0.3V

    VCE
    Back to TOC

    Bob York

    NPN I-V Characteristics: The Ebers-Moll Model


    The physical construction of BJTs is like two PN junction diodes that are very close together The Ebers-Moll Model (right) uses dependent sources to model the physical interaction between the BE and BC diodes. One junction is always larger than the other, giving asymmetrical I-V characteristics (below)
    Forward active region (BE diode forward biased, CB diode reverse biased)

    NPN BJT Ic Ib vcb vce vbe

    Ebers-Moll (EM) NPN Model C Ib Idc Ic

    FIde

    B Ie

    Ide

    RIdc

    Ie Ic Ib

    Ie

    Ic

    Increasing Ib

    Each active region can be described by a current gain, f and r, where f >> r In the forward active region,

    Reverse active region (BE diode reverse biased, CB diode forward biased)

    I c f Ib

    I c f Ib

    I e ( f 1) I b

    Ic f Ie

    f f 1

    In the reverse active region,


    Ib

    VCE

    I c r Ib
    Bob York

    Reverse active currents are exaggerated here for clarity. Usually r<<f

    I c r I b I e ( r 1) I b

    I c r I e r

    r 1

    Back to TOC

    NPN BJT: The Forward Active Region


    Devices are designed to operate in the forward active region where: Base-emitter diode is forward biased Base-collector diode is reverse biased For silicon transistors: Ib vcb vce NPN BJT Ic Ib B Ie E
    50 A 40 A 30 A 20 A 10 A Increasing Ib EM NPN Model in forward active region

    C Ic=FIE

    vbe 0.6-0.7 V
    Ic, , mA
    5 4 3 2 1

    vcb 0.4 V

    Vce >0.2-0.3V

    vbe

    I e Ib I c

    Ideal NPN CE Characteristics Forward active region

    I c f Ib

    Simplified Model for Si NPN biasing calculations in Forward Active Region Ib B 0.7V E C Ic=f IB

    0 A

    Vce, sat 0.2-0.3V


    Bob York

    VCE

    BE diode replaced by constantvoltage-drop model


    Back to TOC

    PNP BJTs
    PNPs are the complementary version of NPNs, just like PMOS is the complementary version of NMOS. Polarity of currents and voltages reversed as compared with NPN. For the forward active region: Ib

    PNP BJT
    Ie veb vec vbc

    EM PNP Model in forward active region

    E Ib B

    I e Ib I c

    veb 0.6-0.7 V

    vbc 0.4 V

    Vec 0.2-0.3V

    Generally PNP has smaller current gain than NPN Ic, , mA


    5 4 3 2 1 Ideal PNP CE Characteristics Forward active region 50 A 40 A 30 A 20 A 10 A 0 A Increasing Ib

    Ic C

    Ic=FIE

    Simplified Model for Si PNP biasing calculations in Forward Active Region E 0.7V Ib B Vec Ic=f IB C

    I c f Ib

    Vce, sat 0.2-0.3V


    Bob York

    EB diode replaced by constantvoltage-drop model


    Back to TOC

    Real BJTs
    Real Devices depart from the idealized behavior in a number of ways. Two important ones are illustrated here Most BJTs show a significant slope in the I-V curves. This is called the Early effect. We will learn how to model this in ECE 2C. Also, the current gain is not exactly constant and varies with device current and temperature as shown below. Note increases with temperature. The current gain can also vary from device-todevice, so circuit techniques must be used to make the designs insensitive to variations in Ic, , mA
    Forward active region 70 A 60 A 8 6 4 2 50 A 40 A 30 A 20 A 10 A 0 A Increasing Ib

    Vce,sat

    VCE

    Current gain vs. collector current at different temperatures (2N3904 data sheet)

    Bob York

    Back to TOC

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