BJTs Amplifier

Shao-Ku Kao

Department of Electrical Engineering

Chang Gung University
 Structure of BJT
Use the voltage between 2 terminals to control the 3rd terminal current – a
controlled current source.

A simplified structure of the

npn transistor

A simplified structure of the

pnp transistor.

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C-Lab.
 Operation of BJT

3 possible operation modes of the 2 junctions:

 Active: used for BJT amplifiers (most important)
 Cutoff & saturation: used for switching operation

Mode EBJ CBJ

Cutoff Reversed Reversed
Active Forward Reversed
Saturation Forward Forward VCEsat=0.1 - 0.3V

Vc < 0.3V C

Vb=0.7V B

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C-Lab.
 Circuit Symbols and Conventions

Figure 5.13 Circuit symbols for BJTs. Figure 5.14 Voltage polarities and
current flow in transistors biased in the
active mode.

IC I S evBE /VT
IC  I S e VBE /VT
IB  
 
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C-Lab.
 Example - 1

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 Example - 2

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 Small-signal voltage gain

Do not let transistor enter saturation

mode, best operation point is Q
Need to allow sufficient room for
output swing

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C-Lab.
 Small-signal operation and Models

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C-Lab.
 Hybrid- model
 A equivalent model for the BJT:
The Hybrid- model (small signal model)

iC iC  ( I S evBE /VT )

gm  ( )
vBE vBE iC  I C
vBE
I S vBE /VT 1 I C
 e 
1 VT VT
vBE iC iC 
r    =
iB g m iB g iC g m
m

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C-Lab.
 Separate the DC quantity
 Analysis the small signal model
make all DC source to 0:
 voltage source=0short circuit;
 current source=0open circuit.

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C-Lab.
 Early Effect on model
 Augmenting the Hybrid- model to Account the Early Effect

effect of ro define as :
ro = VA IC Ignore ro if VA=∞

For voltage gain consider with ro

vo = -g m vbe ( R c || ro )

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C-Lab.
 Early Effect
All the finite slop meet a point VA ,Early voltage: VA,
 a parameter for BJT with range 50~100V

iC with early voltage express as:

vCE
iC =(ISevBE / VT )(1  )
VA
Slop of ic-vCE is output
resistance look into the collector

1
ro 
iC
|vBEcons tan t
VCE
VA VA
 
I S eVBE / VT I 'C

 I’C no early voltage

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C-Lab.
 Small-signal Models - PNP

 The small signal model for PNP transistor is exactly IDENTICAL to that
of NPN

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C-Lab.
 Small-signal operation and Models
重要 !! Model Parameters in Terms of DC Bias Currents
IC VT V VT V VA
gm = re = = ( T ) r = = ( T ) ro =
VT IE IC IB IC IC

In Terms of g m
 
re = r =
gm gm

In Terms of re
 1 1
gm = r = ( +1)re gm+ =
re r re

Re lationships Between  and 

  1
= =  +1=
1-  +1 1-

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C-Lab.
 Resistor at BJT

 Relationship between r and re

1
re 
1
gm 
r
r
re 
 1

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C-Lab.
 Basic BJT amplifier

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 Three Basic configurations
One of the terminal connect to GND,
this terminal is common to input an output
 resistor (RD, RL) is load

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 Characterizing amplifiers

Output resistance :

vx
RO 
ix vi  0

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C-Lab.
 Common Emitter amplifier
VA=∞
Avo   g m RC
Rin  r
Ro  RC

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C-Lab.
 Common Emitter amplifier
VA∞
Input resistance :

Rin  r

Output voltage at amplifier vo :

vo   g m v ( RC // rO )

Avo   gvoltage
Open-circuit m ( RC // rO ) Avo :
gain
V=vi

Ro  ( RC // rO )
 output resistance :

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C-Lab.
 Common Base amplifier

Input resistance :
r
Rin   re
 1
Open-circuit voltage gain Avo :
vo
Avo   g m RC
vi

Output resistance :

Ro  RC

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C-Lab.
 Common collector amplifier (Emitter Follower)
Input resistance : ro neglect
vi
Rin 
ib
ie vi
ib  ie =
 1 re  R L
R in =    1 re  R L 

Open-circuit voltage gain Avo :

vo RL
Avo  
vi RL  re

 output resistance : set vi=0

Ro  re Excluding RL
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C-Lab.
 Exercise – II
Determine the voltage gain and I/O impedances of the circuit, VA= and VA≠

(a)
(b)

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 Exercise – II -answer
(a)
VA=

VA≠

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C-Lab.
 Exercise – II -answer
(b)
VA=

VA≠

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C-Lab.