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High-fidelity single-spin shuttling in silicon
Authors:
Maxim De Smet,
Yuta Matsumoto,
Anne-Marije J. Zwerver,
Larysa Tryputen,
Sander L. de Snoo,
Sergey V. Amitonov,
Amir Sammak,
Nodar Samkharadze,
Önder Gül,
Rick N. M. Wasserman,
Maximilian Rimbach-Russ,
Giordano Scappucci,
Lieven M. K. Vandersypen
Abstract:
The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit-qubit interactions at a distance. Alternatively, the connectivity can be increased by physically displacing the qubits. This has been explored in trapped-ion experiments and using neutral atoms…
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The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit-qubit interactions at a distance. Alternatively, the connectivity can be increased by physically displacing the qubits. This has been explored in trapped-ion experiments and using neutral atoms trapped with optical tweezers. For semiconductor spin qubits, several studies have investigated spin coherent shuttling of individual electrons, but high-fidelity transport over extended distances remains to be demonstrated. Here we report shuttling of an electron inside an isotopically purified Si/SiGe heterostructure using electric gate potentials. First, we form static quantum dots, and study how spin coherence decays as we repeatedly move a single electron between up to five dots. Next, we create a traveling wave potential to transport an electron in a moving quantum dot. This second method shows substantially better spin coherence than the first. It allows us to displace an electron over an effective distance of 10 μm in under 200 ns with an average fidelity of 99%. These results will guide future efforts to realize large-scale semiconductor quantum processors, making use of electron shuttling both within and between qubit arrays.
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Submitted 11 June, 2024;
originally announced June 2024.
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Low disorder and high valley splitting in silicon
Authors:
Davide Degli Esposti,
Lucas E. A. Stehouwer,
Önder Gül,
Nodar Samkharadze,
Corentin Déprez,
Marcel Meyer,
Ilja N. Meijer,
Larysa Tryputen,
Saurabh Karwal,
Marc Botifoll,
Jordi Arbiol,
Sergey V. Amitonov,
Lieven M. K. Vandersypen,
Amir Sammak,
Menno Veldhorst,
Giordano Scappucci
Abstract:
The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductio…
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The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductionist approach fails to consider the interdependence between different structural and electronic properties at the danger of optimising one metric at the expense of the others. Here, we achieve a significant improvement in both disorder and valley splitting by taking a co-design approach to the material stack. We demonstrate isotopically-purified, strained quantum wells with high mobility of 3.14(8)$\times$10$^5$ cm$^2$/Vs and low percolation density of 6.9(1)$\times$10$^{10}$ cm$^{-2}$. These low disorder quantum wells support quantum dots with low charge noise of 0.9(3) $μ$eV/Hz$^{1/2}$ and large mean valley splitting energy of 0.24(7) meV, measured in qubit devices. By striking the delicate balance between disorder, charge noise, and valley splitting, these findings provide a benchmark for silicon as a host semiconductor for quantum dot qubits. We foresee the application of these heterostructures in larger, high-performance quantum processors.
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Submitted 2 February, 2024; v1 submitted 6 September, 2023;
originally announced September 2023.
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A 2D quantum dot array in planar $^{28}$Si/SiGe
Authors:
Florian K. Unseld,
Marcel Meyer,
Mateusz T. Mądzik,
Francesco Borsoi,
Sander L. de Snoo,
Sergey V. Amitonov,
Amir Sammak,
Giordano Scappucci,
Menno Veldhorst,
Lieven M. K. Vandersypen
Abstract:
Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest performance for spin qubit logic has been realized in silicon, but scaling silicon quantum dot arrays in two dimensions has proven to be challenging. By taking…
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Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest performance for spin qubit logic has been realized in silicon, but scaling silicon quantum dot arrays in two dimensions has proven to be challenging. By taking advantage of high-quality heterostructures and carefully designed gate patterns, we are able to form a tunnel coupled 2 $\times$ 2 quantum dot array in a $^{28}$Si/SiGe heterostructure. We are able to load a single electron in all four quantum dots, thus reaching the (1,1,1,1) charge state. Furthermore we characterise and control the tunnel coupling between all pairs of dots by measuring polarisation lines over a wide range of barrier gate voltages. Tunnel couplings can be tuned from about $30~\rm μeV$ up to approximately $400~\rm μeV$. These experiments provide a first step toward the operation of spin qubits in $^{28}$Si/SiGe quantum dots in two dimensions.
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Submitted 6 June, 2023; v1 submitted 31 May, 2023;
originally announced May 2023.
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Hotter is easier: unexpected temperature dependence of spin qubit frequencies
Authors:
Brennan Undseth,
Oriol Pietx-Casas,
Eline Raymenants,
Mohammad Mehmandoost,
Mateusz T. Mądzik,
Stephan G. J. Philips,
Sander L. de Snoo,
David J. Michalak,
Sergey V. Amitonov,
Larysa Tryputen,
Brian Paquelet Wuetz,
Viviana Fezzi,
Davide Degli Esposti,
Amir Sammak,
Giordano Scappucci,
Lieven M. K. Vandersypen
Abstract:
As spin-based quantum processors grow in size and complexity, maintaining high fidelities and minimizing crosstalk will be essential for the successful implementation of quantum algorithms and error-correction protocols. In particular, recent experiments have highlighted pernicious transient qubit frequency shifts associated with microwave qubit driving. Workarounds for small devices, including pr…
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As spin-based quantum processors grow in size and complexity, maintaining high fidelities and minimizing crosstalk will be essential for the successful implementation of quantum algorithms and error-correction protocols. In particular, recent experiments have highlighted pernicious transient qubit frequency shifts associated with microwave qubit driving. Workarounds for small devices, including prepulsing with an off-resonant microwave burst to bring a device to a steady-state, wait times prior to measurement, and qubit-specific calibrations all bode ill for device scalability. Here, we make substantial progress in understanding and overcoming this effect. We report a surprising non-monotonic relation between mixing chamber temperature and spin Larmor frequency which is consistent with observed frequency shifts induced by microwave and baseband control signals. We find that purposefully operating the device at 200 mK greatly suppresses the adverse heating effect while not compromising qubit coherence or single-qubit fidelity benchmarks. Furthermore, systematic non-Markovian crosstalk is greatly reduced. Our results provide a straightforward means of improving the quality of multi-spin control while simplifying calibration procedures for future spin-based quantum processors.
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Submitted 28 April, 2023; v1 submitted 25 April, 2023;
originally announced April 2023.
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Reducing charge noise in quantum dots by using thin silicon quantum wells
Authors:
B. Paquelet Wuetz,
D. Degli Esposti,
A. M. J. Zwerver,
S. V. Amitonov,
M. Botifoll,
J. Arbiol,
A. Sammak,
L. M. K. Vandersypen,
M. Russ,
G. Scappucci
Abstract:
Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried quantum well of a $^{28}$Si/SiGe heterostructure a…
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Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried quantum well of a $^{28}$Si/SiGe heterostructure and show the connection between charge noise, measured locally in quantum dots, and global disorder in the host semiconductor, measured with macroscopic Hall bars. In 5 nm thick $^{28}$Si quantum wells, we find that improvements in the scattering properties and uniformity of the two-dimensional electron gas over a 100 mm wafer correspond to a significant reduction in charge noise, with a minimum value of 0.29$\pm$0.02 $μ$eV/sqrt(Hz) at 1 Hz averaged over several quantum dots. We extrapolate the measured charge noise to simulated dephasing times to cz-gate fidelities that improve nearly one order of magnitude. These results point to a clean and quiet crystalline environment for integrating long-lived and high-fidelity spin qubits into a larger system.
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Submitted 15 September, 2022;
originally announced September 2022.
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Shuttling an electron spin through a silicon quantum dot array
Authors:
A. M. J. Zwerver,
S. V. Amitonov,
S. L. de Snoo,
M. T. Mądzik,
M. Russ,
A. Sammak,
G. Scappucci,
L. M. K. Vandersypen
Abstract:
Coherent links between qubits separated by tens of micrometers are expected to facilitate scalable quantum computing architectures for spin qubits in electrically-defined quantum dots. These links create space for classical on-chip control electronics between qubit arrays, which can help to alleviate the so-called wiring bottleneck. A promising method of achieving coherent links between distant sp…
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Coherent links between qubits separated by tens of micrometers are expected to facilitate scalable quantum computing architectures for spin qubits in electrically-defined quantum dots. These links create space for classical on-chip control electronics between qubit arrays, which can help to alleviate the so-called wiring bottleneck. A promising method of achieving coherent links between distant spin qubits consists of shuttling the spin through an array of quantum dots. Here, we use a linear array of four tunnel-coupled quantum dots in a 28Si/SiGe heterostructure to create a short quantum link. We move an electron spin through the quantum dot array by adjusting the electrochemical potential for each quantum dot sequentially. By pulsing the gates repeatedly, we shuttle an electron forward and backward through the array up to 250 times, which corresponds to a total distance of approximately 80 μm. We make an estimate of the spin-flip probability per hop in these experiments and conclude that this is well below 0.01% per hop.
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Submitted 12 September, 2022; v1 submitted 2 September, 2022;
originally announced September 2022.
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Universal control of a six-qubit quantum processor in silicon
Authors:
Stephan G. J. Philips,
Mateusz T. Mądzik,
Sergey V. Amitonov,
Sander L. de Snoo,
Maximilian Russ,
Nima Kalhor,
Christian Volk,
William I. L. Lawrie,
Delphine Brousse,
Larysa Tryputen,
Brian Paquelet Wuetz,
Amir Sammak,
Menno Veldhorst,
Giordano Scappucci,
Lieven M. K. Vandersypen
Abstract:
Future quantum computers capable of solving relevant problems will require a large number of qubits that can be operated reliably. However, the requirements of having a large qubit count and operating with high-fidelity are typically conflicting. Spins in semiconductor quantum dots show long-term promise but demonstrations so far use between one and four qubits and typically optimize the fidelity…
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Future quantum computers capable of solving relevant problems will require a large number of qubits that can be operated reliably. However, the requirements of having a large qubit count and operating with high-fidelity are typically conflicting. Spins in semiconductor quantum dots show long-term promise but demonstrations so far use between one and four qubits and typically optimize the fidelity of either single- or two-qubit operations, or initialization and readout. Here we increase the number of qubits and simultaneously achieve respectable fidelities for universal operation, state preparation and measurement. We design, fabricate and operate a six-qubit processor with a focus on careful Hamiltonian engineering, on a high level of abstraction to program the quantum circuits and on efficient background calibration, all of which are essential to achieve high fidelities on this extended system. State preparation combines initialization by measurement and real-time feedback with quantum-non-demolition measurements. These advances will allow for testing of increasingly meaningful quantum protocols and constitute a major stepping stone towards large-scale quantum computers.
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Submitted 18 February, 2022;
originally announced February 2022.
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Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
Authors:
Brian Paquelet Wuetz,
Merritt P. Losert,
Sebastian Koelling,
Lucas E. A. Stehouwer,
Anne-Marije J. Zwerver,
Stephan G. J. Philips,
Mateusz T. Mądzik,
Xiao Xue,
Guoji Zheng,
Mario Lodari,
Sergey V. Amitonov,
Nodar Samkharadze,
Amir Sammak,
Lieven M. K. Vandersypen,
Rajib Rahman,
Susan N. Coppersmith,
Oussama Moutanabbir,
Mark Friesen,
Giordano Scappucci
Abstract:
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processor…
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Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processors. Here, we elucidate and statistically predict the valley splitting by the holistic integration of 3D atomic-level properties, theory and transport. We find that the concentration fluctuations of Si and Ge atoms within the 3D landscape of Si/SiGe interfaces can explain the observed large spread of valley splitting from measurements on many quantum dot devices. Against the prevailing belief, we propose to boost these random alloy composition fluctuations by incorporating Ge atoms in the Si quantum well to statistically enhance valley splitting.
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Submitted 1 December, 2022; v1 submitted 17 December, 2021;
originally announced December 2021.
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Qubits made by advanced semiconductor manufacturing
Authors:
A. M. J. Zwerver,
T. Krähenmann,
T. F. Watson,
L. Lampert,
H. C. George,
R. Pillarisetty,
S. A. Bojarski,
P. Amin,
S. V. Amitonov,
J. M. Boter,
R. Caudillo,
D. Corras-Serrano,
J. P. Dehollain,
G. Droulers,
E. M. Henry,
R. Kotlyar,
M. Lodari,
F. Luthi,
D. J. Michalak,
B. K. Mueller,
S. Neyens,
J. Roberts,
N. Samkharadze,
G. Zheng,
O. K. Zietz
, et al. (4 additional authors not shown)
Abstract:
Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabr…
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Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabrication techniques offer process flexibility, they suffer from low yield and poor uniformity. An important question is whether the processing conditions developed in the manufacturing fab environment to enable high yield, throughput, and uniformity of transistors are suitable for quantum dot arrays and do not compromise the delicate qubit properties. Here, we demonstrate quantum dots hosted at a 28Si/28SiO2 interface, fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. As a result, we achieve nanoscale gate patterns with remarkable homogeneity. The quantum dots are well-behaved in the multi-electron regime, with excellent tunnel barrier control, a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance reveals relaxation times of over 1 s at 1 Tesla and coherence times of over 3 ms, matching the quality of silicon spin qubits reported to date. The feasibility of high-quality qubits made with fully-industrial techniques strongly enhances the prospects of a large-scale quantum computer
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Submitted 29 January, 2021;
originally announced January 2021.
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On-chip Integration of Si/SiGe-based Quantum Dots and Switched-capacitor Circuits
Authors:
Y. Xu,
F. K. Unseld,
A. Corna,
A. M. J. Zwerver,
A. Sammak,
D. Brousse,
N. Samkharadze,
S. V. Amitonov,
M. Veldhorst,
G. Scappucci,
R. Ishihara,
L. M. K. Vandersypen
Abstract:
Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck for scaling. Demultiplexing via on-chip circuitry offers an effective strategy to overcome this bottleneck. In the case of gate-defined quantum dot arrays, specific static voltages need to be applied to many gates simult…
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Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck for scaling. Demultiplexing via on-chip circuitry offers an effective strategy to overcome this bottleneck. In the case of gate-defined quantum dot arrays, specific static voltages need to be applied to many gates simultaneously to realize electron confinement. When a charge-locking structure is placed between the quantum device and the demultiplexer, the voltage can be maintained locally. In this study, we implement a switched-capacitor circuit for charge-locking and use it to float the plunger gate of a single quantum dot. Parallel plate capacitors, transistors and quantum dot devices are monolithically fabricated on a Si/SiGe-based substrate to avoid complex off-chip routing. We experimentally study the effects of the capacitor and transistor size on the voltage accuracy of the floating node. Furthermore, we demonstrate that the electrochemical potential of the quantum dot can follow a 100 Hz pulse signal while the dot is partially floating, which is essential for applying this strategy in qubit experiments.
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Submitted 8 May, 2020;
originally announced May 2020.
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Single-charge occupation in ambipolar quantum dots
Authors:
A. J. Sousa de Almeida,
A. Marquez Seco,
T. van den Berg,
B. van de Ven,
F. Bruijnes,
S. V. Amitonov,
F. A. Zwanenburg
Abstract:
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and fe…
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We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and few-hole regimes in the QDs of our ambipolar device by active charge sensing.
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Submitted 14 January, 2020;
originally announced January 2020.
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Quantum Dot Arrays in Silicon and Germanium
Authors:
W. I. L. Lawrie,
H. G. J. Eenink,
N. W. Hendrickx,
J. M. Boter,
L. Petit,
S. V. Amitonov,
M. Lodari,
B. Paquelet Wuetz,
C. Volk,
S. Philips,
G. Droulers,
N. Kalhor,
F. van Riggelen,
D. Brousse,
A. Sammak,
L. M. K. Vandersypen,
G. Scappucci,
M. Veldhorst
Abstract:
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereb…
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Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereby serve as excellent host for spins with long quantum coherence. Here we demonstrate group IV quantum dot arrays in silicon metal-oxide-semiconductor (SiMOS), strained silicon (Si/SiGe) and strained germanium (Ge/SiGe). We fabricate using a multi-layer technique to achieve tightly confined quantum dots and compare integration processes. While SiMOS can benefit from a larger temperature budget and Ge/SiGe can make ohmic contact to metals, the overlapping gate structure to define the quantum dots can be based on a nearly identical integration. We realize charge sensing in each platform, for the first time in Ge/SiGe, and demonstrate fully functional linear and two-dimensional arrays where all quantum dots can be depleted to the last charge state. In Si/SiGe, we tune a quintuple quantum dot using the N+1 method to simultaneously reach the few electron regime for each quantum dot. We compare capacitive cross talk and find it to be the smallest in SiMOS, relevant for the tuning of quantum dot arrays. These results constitute an excellent base for quantum computation with quantum dots and provide opportunities for each platform to be integrated with standard semiconductor manufacturing.
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Submitted 14 September, 2019;
originally announced September 2019.
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Quantum transport properties of industrial $^{28}$Si/$^{28}$SiO$_2$
Authors:
D. Sabbagh,
N. Thomas,
J. Torres,
R. Pillarisetty,
P. Amin,
H. C. George,
K. Singh,
A. Budrevich,
M. Robinson,
D. Merrill,
L. Ross,
J. Roberts,
L. Lampert,
L. Massa,
S. Amitonov,
J. Boter,
G. Droulers,
H. G. J. Eenink,
M. van Hezel,
D. Donelson,
M. Veldhorst,
L. M. K. Vandersypen,
J. S. Clarke,
G. Scappucci
Abstract:
We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of…
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We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of $1.75\times10^{11}$ cm$^{-2}$ and a peak mobility of 9800 cm$^2$/Vs are measured at a temperature of 1.7 K. The $^{28}$Si/$^{28}$SiO$_2$ interface is characterized by a roughness of $Δ=0.4$ nm and a correlation length of $Λ=3.4$ nm. An upper bound for valley splitting energy of 480 $μ$eV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale $^{28}$Si/$^{28}$SiO$_2$ as a promising material platform to manufacture industrial spin qubits.
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Submitted 21 January, 2019; v1 submitted 15 October, 2018;
originally announced October 2018.
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A fabrication guide for planar silicon quantum dot heterostructures
Authors:
Paul C. Spruijtenburg,
Sergey V. Amitonov,
Wilfred G. van der Wiel,
Floris A. Zwanenburg
Abstract:
We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposi…
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We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposition must be tailored in order to prevent unwanted side effects such as defects, disorder and dewetting. In two directly related manuscripts written in parallel we use techniques described in this work to create depletion-mode quantum dots in intrinsic silicon, and low-disorder silicon quantum dots defined with palladium gates. While we discuss three different planar gate structures, the general principles also apply to 0D and 1D systems, such as self-assembled islands and nanowires.
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Submitted 3 February, 2018; v1 submitted 26 September, 2017;
originally announced September 2017.
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Palladium gates for reproducible quantum dots in silicon
Authors:
Matthias Brauns,
Sergey V. Amitonov,
Paul-Christiaan Spruijtenburg,
Floris A. Zwanenburg
Abstract:
We replace the established aluminium gates for the formation of quantum dots in silicon with gates made from palladium. We study the morphology of both aluminium and palladium gates with transmission electron microscopy. The native aluminium oxide is found to be formed all around the aluminium gates, which could lead to the formation of unintentional dots. Therefore, we report on a novel fabricati…
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We replace the established aluminium gates for the formation of quantum dots in silicon with gates made from palladium. We study the morphology of both aluminium and palladium gates with transmission electron microscopy. The native aluminium oxide is found to be formed all around the aluminium gates, which could lead to the formation of unintentional dots. Therefore, we report on a novel fabrication route that replaces aluminium and its native oxide by palladium with atomic-layer-deposition-grown aluminium oxide. Using this approach, we show the formation of low-disorder gate-defined quantum dots, which are reproducibly fabricated. Furthermore, palladium enables us to further shrink the gate design, allowing us to perform electron transport measurements in the few-electron regime in devices comprising only two gate layers, a major technological advancement. It remains to be seen, whether the introduction of palladium gates can improve the excellent results on electron and nuclear spin qubits defined with an aluminium gate stack.
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Submitted 20 April, 2018; v1 submitted 22 September, 2017;
originally announced September 2017.
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Depletion-mode Quantum Dots in Intrinsic Silicon
Authors:
Sergey V. Amitonov,
Paul C. Spruijtenburg,
Max W. S. Vervoort,
Wilfred G. van der Wiel,
Floris A. Zwanenburg
Abstract:
We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO$_2$/Al$_2$O$_3$ dielectric stack to induce a 2DHG at the Si/SiO$_2$ interface. Fabrication of the gate structures is accomplished with a single layer metallization process. Transport spectroscopy reveals regular Coulomb osc…
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We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO$_2$/Al$_2$O$_3$ dielectric stack to induce a 2DHG at the Si/SiO$_2$ interface. Fabrication of the gate structures is accomplished with a single layer metallization process. Transport spectroscopy reveals regular Coulomb oscillations with charging energies of 10-15 meV and 3-5 meV for the few- and many-hole regimes, respectively. This depletion-mode design avoids complex multilayer architectures requiring precision alignment, and allows to adopt directly best practices already developed for depletion dots in other material systems. We also demonstrate a method to deactivate fixed charge in the SiO$_2$/Al$_2$O$_3$ dielectric stack using deep ultraviolet light, which may become an important procedure to avoid unwanted 2DHG build-up in Si MOS quantum bits.
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Submitted 3 February, 2018; v1 submitted 21 September, 2017;
originally announced September 2017.
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Passivation and characterization of charge defects in ambipolar silicon quantum dots
Authors:
P. C. Spruijtenburg,
S. V. Amitonov,
F. Mueller,
W. G. van der Wiel,
F. A. Zwanenburg
Abstract:
In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both before and after an annealing process which uses an Al$_2$O$_3$ overlayer, grown by atomic layer deposition. After passivation of the majority of charge…
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In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both before and after an annealing process which uses an Al$_2$O$_3$ overlayer, grown by atomic layer deposition. After passivation of the majority of charge defects with annealing we can electrostatically define hole quantum dots up to 180 nm in length. Our ambipolar structures reveal amphoteric charge defects that remain after annealing with charging energies of ~10 meV in both the positive and negative charge state.
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Submitted 22 February, 2017;
originally announced February 2017.
