-
Quantifying the U $5f$ covalence and degree of localization in U intermetallics
Authors:
Andrea Marino,
Denise S. Christovam,
Daisuke Takegami,
Johannes Falke,
Miguel M. F. Carvalho,
Takaki Okauchi,
Chun-Fu Chang,
Simone G. Altendorf,
Andrea Amorese,
Martin Sundermann,
Andrei Gloskovskii,
Hlynur Gretarsson,
Bernhard Keimer,
Alexandr V. Andreev,
Ladislav Havela,
Andreas Leithe-Jasper,
Andrea Severing,
Jan Kunes,
Liu Hao Tjeng,
Atsushi Hariki
Abstract:
A procedure for quantifying the U $5f$ electrons' covalence and degree of localization in U intermetallic compounds is presented. To this end, bulk sensitive hard and soft x-ray photoelectron spectroscopy were utilized in combination with density-functional theory (DFT) plus dynamical mean-field theory (DMFT) calculations. The energy dependence of the photoionization cross-sections allows the dise…
▽ More
A procedure for quantifying the U $5f$ electrons' covalence and degree of localization in U intermetallic compounds is presented. To this end, bulk sensitive hard and soft x-ray photoelectron spectroscopy were utilized in combination with density-functional theory (DFT) plus dynamical mean-field theory (DMFT) calculations. The energy dependence of the photoionization cross-sections allows the disentanglement of the U\,$5f$ contribution to the valence band from the various other atomic subshells so that the computational parameters in the DFT\,+\,DMFT can be reliably determined. Applying this method to UGa$_2$ and UB$_2$ as model compounds from opposite ends of the (de)localization range, we have achieved excellent simulations of the valence band and core-level spectra. The width in the distribution of atomic U\,$5f$ configurations contributing to the ground state, as obtained from the calculations, quantifies the correlated nature and degree of localization of the U\,5$f$. The findings permit answering the longstanding question why different spectroscopic techniques give seemingly different numbers for the U 5$f$ valence in intermetallic U compounds.
△ Less
Submitted 30 July, 2024; v1 submitted 9 April, 2024;
originally announced April 2024.
-
CaCu$_3$Ru$_4$O$_{12}$: a high Kondo-temperature transition metal oxide
Authors:
D. Takegami,
C. Y. Kuo,
K. Kasebayashi,
J. -G. Kim,
C. F. Chang,
C. E. Liu,
C. N. Wu,
D. Kasinathan,
S. G. Altendorf,
K. Hoefer,
F. Meneghin,
A. Marino,
Y. F. Liao,
K. D. Tsuei,
C. T. Chen,
K. -T. Ko,
A. Günther,
S. G. Ebbinghaus,
J. W. Seo,
D. H. Lee,
G. Ryu,
A. C. Komarek,
S. Sugano,
Y. Shimakawa,
A. Tanaka
, et al. (4 additional authors not shown)
Abstract:
We present a comprehensive study of CaCu$_3$Ru$_4$O$_{12}$ using bulk sensitive hard and soft x-ray spectroscopy combined with local-density approximation (LDA) + dynamical mean-field theory (DMFT) calculations. Correlation effects on both the Cu and Ru ions can be observed. From the Cu $2p$ core level spectra we deduce the presence of magnetic Cu$^{2+}$ ions hybridized with a reservoir of itinera…
▽ More
We present a comprehensive study of CaCu$_3$Ru$_4$O$_{12}$ using bulk sensitive hard and soft x-ray spectroscopy combined with local-density approximation (LDA) + dynamical mean-field theory (DMFT) calculations. Correlation effects on both the Cu and Ru ions can be observed. From the Cu $2p$ core level spectra we deduce the presence of magnetic Cu$^{2+}$ ions hybridized with a reservoir of itinerant electrons. The strong photon energy dependence of the valence band allows us to disentangle the Ru, Cu, and O contributions and thus to optimize the DMFT calculations. The calculated spin and charge susceptibilities show that the transition metal oxide CaCu$_3$Ru$_4$O$_{12}$ must be classified as a Kondo system and that the Kondo temperature is in the range of 500-1000 K.
△ Less
Submitted 6 December, 2021;
originally announced December 2021.
-
Interfacing topological insulators and ferrimagnets: Bi$_2$Te$_3$ and Fe$_3$O$_4$ heterostructures grown by molecular beam epitaxy
Authors:
V. M. Pereira,
C. N. Wu,
C. -A. Knight,
A. Choa,
L. H. Tjeng,
S. G. Altendorf
Abstract:
Relying on the magnetism induced by the proximity effect in heterostructures of topological insulators and magnetic insulators is one of the promising routes to achieve the quantum anomalous Hall effect. Here we investigate heterostructures of Bi$_2$Te$_3$ and Fe$_3$O$_4$. By growing two different types of heterostructures by molecular beam epitaxy, Fe$_3$O$_4$ on Bi$_2$Te$_3$ and Bi$_2$Te$_3$ on…
▽ More
Relying on the magnetism induced by the proximity effect in heterostructures of topological insulators and magnetic insulators is one of the promising routes to achieve the quantum anomalous Hall effect. Here we investigate heterostructures of Bi$_2$Te$_3$ and Fe$_3$O$_4$. By growing two different types of heterostructures by molecular beam epitaxy, Fe$_3$O$_4$ on Bi$_2$Te$_3$ and Bi$_2$Te$_3$ on Fe$_3$O$_4$, we explore differences in chemical stability, crystalline quality, electronic structure, and transport properties. We find the heterostructure Bi$_2$Te$_3$ on Fe$_3$O$_4$ to be a more viable approach, with transport signatures in agreement with a gap opening in the topological surface states.
△ Less
Submitted 26 June, 2020;
originally announced June 2020.
-
Charge transfer energy in iridates: a hard x-ray photoelectron spectroscopy study
Authors:
D. Takegami,
D. Kasinathan,
K. K. Wolff,
S. G. Altendorf,
C. F. Chang,
K. Hoefer,
A. Melendez-Sans,
Y. Utsumi,
F. Meneghin,
T. D. Ha,
C. H. Yen,
K. Chen,
C. Y. Kuo,
Y. F. Liao,
K. D. Tsuei,
R. Morrow,
S. Wurmehl,
B. Büchner,
B. E. Prasad,
M. Jansen,
A. C. Komarek,
P. Hansmann,
L. H. Tjeng
Abstract:
We have investigated the electronic structure of iridates in the double perovskite crystal structure containing either Ir$^{4+}$ or Ir$^{5+}$ using hard x-ray photoelectron spectroscopy. The experimental valence band spectra can be well reproduced using tight binding calculations including only the Ir $5d$, O $2p$ and O $2s$ orbitals with parameters based on the downfolding of the density-function…
▽ More
We have investigated the electronic structure of iridates in the double perovskite crystal structure containing either Ir$^{4+}$ or Ir$^{5+}$ using hard x-ray photoelectron spectroscopy. The experimental valence band spectra can be well reproduced using tight binding calculations including only the Ir $5d$, O $2p$ and O $2s$ orbitals with parameters based on the downfolding of the density-functional band structure results. We found that regardless of the A and B cations, the A$_2$BIrO$_6$ iridates have essentially zero O $2p$ to Ir $5d$ charge transfer energies. Hence, double perovskite iridates turn out to be extremely covalent systems with the consequence being that the magnetic exchange interactions become very long-ranged, thereby hampering the materialization of the long-sought Kitaev physics. Nevertheless, it still would be possible to realize a spin-liquid system using the iridates with a proper tuning of the various competing exchange interactions.
△ Less
Submitted 25 May, 2020;
originally announced May 2020.
-
Molecular beam epitaxy preparation and in situ characterization of FeTe thin films
Authors:
V. M. Pereira,
C. N. Wu,
C. E. Liu,
S. -S. Liao,
C. F. Chang,
C. -Y. Kuo,
C. Koz,
U. Schwarz,
H. -J. Lin,
C. T. Chen. L. H. Tjeng,
S. G. Altendorf
Abstract:
We have synthesized Fe$_{1+y}$Te thin films by means of molecular beam epitaxy (MBE) under Te-limited growth conditions. We found that epitaxial layer-by-layer growth is possible for a wide range of excess Fe values, wider than expected from what is known on the bulk material. Using x-ray magnetic circular dichroism spectroscopy at the Fe L$_{2,3}$ and Te M$_{4,5}$ edges, we observed that films wi…
▽ More
We have synthesized Fe$_{1+y}$Te thin films by means of molecular beam epitaxy (MBE) under Te-limited growth conditions. We found that epitaxial layer-by-layer growth is possible for a wide range of excess Fe values, wider than expected from what is known on the bulk material. Using x-ray magnetic circular dichroism spectroscopy at the Fe L$_{2,3}$ and Te M$_{4,5}$ edges, we observed that films with high excess Fe contain ferromagnetic clusters while films with lower excess Fe remain nonmagnetic. Moreover, x-ray absorption spectroscopy showed that it is possible to obtain films with very similar electronic structure as that of a high quality bulk single crystal Fe$_{1.14}$Te. Our results suggest that MBE with Te-limited growth may provide an opportunity to synthesize FeTe films with smaller amounts of excess Fe as to come closer to a possible superconducting phase.
△ Less
Submitted 21 February, 2020;
originally announced February 2020.
-
Electronic signature of the vacancy ordering in NbO (Nb3O3)
Authors:
A. K. Efimenko,
N. Hollmann,
K. Hoefer,
J. Weinen,
D. Takegami,
K. K. Wolff,
S. G. Altendorf,
Z. Hu,
A. D. Rata,
A. C. Komarek,
A. A. Nugroho,
Y. F. Liao,
K. -D. Tsuei,
H. H. Hsieh,
H. -J. Lin,
C. T. Chen,
L. H. Tjeng,
D. Kasinathan
Abstract:
We investigated the electronic structure of the vacancy-ordered 4d-transition metal monoxide NbO (Nb3O3) using angle-integrated soft- and hard-x-ray photoelectron spectroscopy as well as ultra-violet angle-resolved photoelectron spectroscopy. We found that density-functional-based band structure calculations can describe the spectral features accurately provided that self-interaction effects are t…
▽ More
We investigated the electronic structure of the vacancy-ordered 4d-transition metal monoxide NbO (Nb3O3) using angle-integrated soft- and hard-x-ray photoelectron spectroscopy as well as ultra-violet angle-resolved photoelectron spectroscopy. We found that density-functional-based band structure calculations can describe the spectral features accurately provided that self-interaction effects are taken into account. In the angle-resolved spectra we were able to identify the so-called vacancy band that characterizes the ordering of the vacancies. This together with the band structure results indicates the important role of the very large inter-Nb-4d hybridization for the formation of the ordered vacancies and the high thermal stability of the ordered structure of niobium monoxide.
△ Less
Submitted 20 September, 2017;
originally announced September 2017.
-
Valence state of Sm in single crystalline EuO thin films
Authors:
A. Reisner,
D. Kasinathan,
S. Wirth,
L. H. Tjeng,
S. G. Altendorf
Abstract:
Samarium has two stable valence states, 2+ and 3+, which coexist in many compounds forming spatially homogeneous intermediate valence states. We study the valence state of samarium when incorporated in a single crystalline EuO thin film which crystallizes in a $fcc$-structure similar to that of the intermediate valence SmO, but with a larger lattice constant. Due to the increased lattice spacing,…
▽ More
Samarium has two stable valence states, 2+ and 3+, which coexist in many compounds forming spatially homogeneous intermediate valence states. We study the valence state of samarium when incorporated in a single crystalline EuO thin film which crystallizes in a $fcc$-structure similar to that of the intermediate valence SmO, but with a larger lattice constant. Due to the increased lattice spacing, a stabilization of the larger Sm$^{2+}$ ion is expected. Surprisingly, the samarium incorporated in Sm$_{\mathrm{x}}$Eu$_{\mathrm{1-x}}$O thin films shows a predominantly trivalent character, as determined by x-ray photoelectron spectroscopy and magnetometry measurements. We infer that the O$^{2-}$ ions in the EuO lattice have enough room to move locally, so as to reduce the Sm-O distance and stabilize the Sm$^{3+}$ valence.
△ Less
Submitted 26 April, 2017; v1 submitted 31 January, 2017;
originally announced January 2017.
-
Local correlations, non-local screening, multiplets, and band formation in NiO
Authors:
T. Haupricht,
J. Weinen,
A. Tanaka,
R. Gierth,
S. G. Altendorf,
Y. -Y. Chin,
T. Willers,
J. Gegner,
H. Fujiwara,
F. Strigari,
A. Hendricks,
D. Regesch,
Z. Hu,
Hua Wu,
K. -D. Tsuei,
Y. F. Liao,
H. H. Hsieh,
H. -J. Lin,
C. T. Chen,
L. H. Tjeng
Abstract:
We report on a comparative study of the valence band electronic structure of NiO as bulk material and of NiO as impurity in MgO. From the impurity we have been able to determine reliably the parameters which describe the local correlations, thereby establishing the compensated-spin character of the first ionization state or the state created by hole doping. Using bulk-sensitive x-ray photoemission…
▽ More
We report on a comparative study of the valence band electronic structure of NiO as bulk material and of NiO as impurity in MgO. From the impurity we have been able to determine reliably the parameters which describe the local correlations, thereby establishing the compensated-spin character of the first ionization state or the state created by hole doping. Using bulk-sensitive x-ray photoemission we identify pronounced satellite features in the valence band of bulk NiO which cannot be explained by single-site many body approaches nor by mean field calculations. We infer the presence of screening processes involving local quasi-core states in the valence band and non-local coherent many body states. These processes are strong and the propagation of an extra hole in the valence band of NiO will therefore be accompanied by a range of high energy excitations. This in turn will make the observation of the dispersion relations in the Ni 3d bands difficult, also because the effective band width is no more than 0.25 eV as estimated from multi-site calculations.
△ Less
Submitted 24 October, 2012;
originally announced October 2012.
-
NO-assisted molecular-beam epitaxial growth of nitrogen substituted EuO
Authors:
R. Wicks,
S. G. Altendorf,
C. Caspers,
H. Kierspel,
R. Sutarto,
L. H. Tjeng,
A. Damascelli
Abstract:
We have investigated a method for substituting oxygen with nitrogen in EuO thin films, which is based on molecular beam epitaxy distillation with NO gas as the oxidizer. By varying the NO gas pressure, we produce crystalline, epitaxial EuO_(1-x)N_x films with good control over the films' nitrogen concentration. In-situ x-ray photoemission spectroscopy reveals that nitrogen substitution is connecte…
▽ More
We have investigated a method for substituting oxygen with nitrogen in EuO thin films, which is based on molecular beam epitaxy distillation with NO gas as the oxidizer. By varying the NO gas pressure, we produce crystalline, epitaxial EuO_(1-x)N_x films with good control over the films' nitrogen concentration. In-situ x-ray photoemission spectroscopy reveals that nitrogen substitution is connected to the formation Eu3+ 4f6 and a corresponding decrease in the number of Eu2+ 4f7, indicating that nitrogen is being incorporated in its 3- oxidation state. While small amounts of Eu3+ in over-oxidized Eu_(1-delta)O thin films lead to a drastic suppression of the ferromagnetism, the formation of Eu3+ in EuO_(1-x)N_x still allows the ferromagnetic phase to exist with an unaffected Tc, thus providing an ideal model system to study the interplay between the magnetic f7 (J=7/2) and the non-magnetic f6 (J=0) states close to the Fermi level.
△ Less
Submitted 12 April, 2012;
originally announced April 2012.
-
Strain dependent transport properties of the quasi two-dimensional correlated metal, LaNiO$_{3}$
Authors:
E. J. Moon,
B. A. Gray,
M. Kareev,
J. Liu,
S. G. Altendorf,
F. Strigari,
L. H. Tjeng,
J. W. Freeland,
J. Chakhalian
Abstract:
We explore the electrical transport and magneto-conductance in quasi two-dimensional strongly correlated ultrathin films of LaNiO$_{3}$ (LNO) to investigate the effect of hetero-epitaxial strain on electron-electron and electron-lattice interactions from the low to intermediate temperature range (2K$\sim$170K). The fully epitaxial 10 unit cell thick films spanning tensile strain up to $\sim4%$ are…
▽ More
We explore the electrical transport and magneto-conductance in quasi two-dimensional strongly correlated ultrathin films of LaNiO$_{3}$ (LNO) to investigate the effect of hetero-epitaxial strain on electron-electron and electron-lattice interactions from the low to intermediate temperature range (2K$\sim$170K). The fully epitaxial 10 unit cell thick films spanning tensile strain up to $\sim4%$ are used to investigate effects of enhanced carrier localization driven by a combination of weak localization and electron-electron interactions at low temperatures. The magneto-conductance data shows the importance of the increased contribution of weak localization to low temperature quantum corrections. The obtained results demonstrate that with increasing tensile strain and reduced temperature the quantum confined LNO system gradually evolves from the Mott into the Mott-Anderson regime.
△ Less
Submitted 27 May, 2011;
originally announced May 2011.
-
Asymmetric orbital-lattice interactions in ultra-thin correlated oxide films
Authors:
J. Chakhalian,
J. M. Rondinelli,
Jian Liu,
B. A. Gray,
M. Kareev,
E. J. Moon,
N. Prasai,
J. L. Cohn,
M. Varela,
I. C. Tung,
M. J. Bedzyk,
S. G. Altendorf,
F. Strigari,
B. Dabrowski,
L. H. Tjeng,
P. J. Ryan,
J. W. Freeland
Abstract:
Using resonant X-ray spectroscopies combined with density functional calculations, we find an asymmetric bi-axial strain-induced $d$-orbital response in ultra-thin films of the correlated metal LaNiO$_3$ which are not accessible in the bulk. The sign of the misfit strain governs the stability of an octahedral "breathing" distortion, which, in turn, produces an emergent charge-ordered ground state…
▽ More
Using resonant X-ray spectroscopies combined with density functional calculations, we find an asymmetric bi-axial strain-induced $d$-orbital response in ultra-thin films of the correlated metal LaNiO$_3$ which are not accessible in the bulk. The sign of the misfit strain governs the stability of an octahedral "breathing" distortion, which, in turn, produces an emergent charge-ordered ground state with an altered ligand-hole density and bond covalency. Control of this new mechanism opens a pathway to rational orbital engineering, providing a platform for artificially designed Mott materials.
△ Less
Submitted 25 August, 2011; v1 submitted 7 August, 2010;
originally announced August 2010.
-
Epitaxy, stoichiometry, and magnetic properties of Gd-doped EuO films on YSZ (001)
Authors:
R. Sutarto,
S. G. Altendorf,
B. Coloru,
M. Moretti Sala,
T. Haupricht,
C. F. Chang,
Z. Hu,
C. Schüßler-Langeheine,
N. Hollmann,
H. Kierspel,
J. A. Mydosh,
H. H. Hsieh,
H. -J. Lin,
C. T. Chen,
L. H. Tjeng
Abstract:
We have succeeded in preparing high-quality Gd-doped single-crystalline EuO films. Using Eu-distillation-assisted molecular beam epitaxy and a systematic variation in the Gd and oxygen deposition rates, we have been able to observe sustained layer-by-layer epitaxial growth on yttria-stabilized cubic zirconia (001). The presence of Gd helps to stabilize the layer-by-layer growth mode. We used sof…
▽ More
We have succeeded in preparing high-quality Gd-doped single-crystalline EuO films. Using Eu-distillation-assisted molecular beam epitaxy and a systematic variation in the Gd and oxygen deposition rates, we have been able to observe sustained layer-by-layer epitaxial growth on yttria-stabilized cubic zirconia (001). The presence of Gd helps to stabilize the layer-by-layer growth mode. We used soft x-ray absorption spectroscopy at the Eu and Gd M4,5 edges to confirm the absence of Eu3+ contaminants and to determine the actual Gd concentration. The distillation process ensures the absence of oxygen vacancies in the films.
From magnetization measurements we found the Curie temperature to increase smoothly as a function of doping from 70 K up to a maximum of 125 K. A threshold behavior was not observed for concentrations as low as 0.2%.
△ Less
Submitted 24 September, 2009; v1 submitted 9 March, 2009;
originally announced March 2009.
-
Epitaxial and layer-by-layer growth of EuO thin films on yttria-stabilized cubic zirconia (001) using MBE distillation
Authors:
R. Sutarto,
S. G. Altendorf,
B. Coloru,
M. Moretti Sala,
T. Haupricht,
C. F. Chang,
Z. Hu,
C. Schüßler-Langeheine,
N. Hollmann,
H. Kierspel,
H. H. Hsieh,
H. -J. Lin,
C. T. Chen,
L. H. Tjeng
Abstract:
We have succeeded in growing epitaxial and highly stoichiometric films of EuO on yttria-stabilized cubic zirconia (YSZ) (001). The use of the Eu-distillation process during the molecular beam epitaxy assisted growth enables the consistent achievement of stoichiometry. We have also succeeded in growing the films in a layer-by-layer fashion by fine tuning the Eu vs. oxygen deposition rates. The in…
▽ More
We have succeeded in growing epitaxial and highly stoichiometric films of EuO on yttria-stabilized cubic zirconia (YSZ) (001). The use of the Eu-distillation process during the molecular beam epitaxy assisted growth enables the consistent achievement of stoichiometry. We have also succeeded in growing the films in a layer-by-layer fashion by fine tuning the Eu vs. oxygen deposition rates. The initial stages of growth involve the limited supply of oxygen from the YSZ substrate, but the EuO stoichiometry can still be well maintained. The films grown were sufficiently smooth so that the capping with a thin layer of aluminum was leak tight and enabled ex situ experiments free from trivalent Eu species. The findings were used to obtain recipes for better epitaxial growth of EuO on MgO (001).
△ Less
Submitted 28 May, 2009; v1 submitted 2 February, 2009;
originally announced February 2009.
