-
Mott resistive switching initiated by topological defects
Authors:
Alessandra Milloch,
Ignacio Figueruelo-Campanero,
Wei-Fan Hsu,
Selene Mor,
Simon Mellaerts,
Francesco Maccherozzi,
Larissa Ishibe Veiga,
Sarnjeet S. Dhesi,
Mauro Spera,
Jin Won Seo,
Jean-Pierre Locquet,
Michele Fabrizio,
Mariela Menghini,
Claudio Giannetti
Abstract:
Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, resistive memories and brain-inspired computation, the nature of the local stochastic fluctuations that drive the formation of me…
▽ More
Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, resistive memories and brain-inspired computation, the nature of the local stochastic fluctuations that drive the formation of metallic nuclei out of the insulating state has remained hidden. Here, using operando X-ray nano-imaging, we have captured the early-stages of resistive switching in a V2O3-based device under working conditions. V2O3 is a paradigmatic Mott material, which undergoes a first-order metal-to-insulator transition coupled to a lattice transformation that breaks the threefold rotational symmetry of the rhombohedral metal phase. We reveal a new class of volatile electronic switching triggered by nanoscale topological defects of the lattice order parameter of the insulating phase. Our results pave the way to the use of strain engineering approaches to manipulate topological defects and achieve the full control of the electronic Mott switching. The concept of topology-driven reversible electronic transition is of interest for a broad class of quantum materials, comprising transition metal oxides, chalcogenides and kagome metals, that exhibit first-order electronic transitions coupled to a symmetry-breaking order.
△ Less
Submitted 1 February, 2024;
originally announced February 2024.
-
Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films
Authors:
Simon Mellaerts,
Claudio Bellani,
Wei-Fan Hsu,
Alberto Binetti,
Koen Schouteden,
Maria Recaman-Payo,
Mariela Menghini,
Juan Rubio Zuazo,
Jesús López Sánchez,
Jin Won Seo,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
Dimensional confinement has shown to be an effective strategy to tune competing degrees of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal vanadium sesquioxide (V2O3) by means of oxygen-assisted molecular beam epitaxy. This led to a series of high-quality epitaxial ultrathin V2O3 films down to unit cell thickness, enabling the study of the intrinsic electron correlat…
▽ More
Dimensional confinement has shown to be an effective strategy to tune competing degrees of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal vanadium sesquioxide (V2O3) by means of oxygen-assisted molecular beam epitaxy. This led to a series of high-quality epitaxial ultrathin V2O3 films down to unit cell thickness, enabling the study of the intrinsic electron correlations upon confinement. By electrical and optical measurements, we demonstrate a dimensional confinement-induced metal-insulator transition in these ultrathin films. We shed light on the Mott-Hubbard nature of this transition, revealing an abrupt vanishing of the quasiparticle weight as demonstrated by photoemission spectroscopy. Furthermore, we prove that dimensional confinement acts as an effective out-of-plane stress. This highlights the structural component of correlated oxides in a confined architecture, while opening an avenue to control both in-plane and out-of-plane lattice components by epitaxial strain and confinement, respectively.
△ Less
Submitted 7 December, 2023;
originally announced December 2023.
-
On the origin of supertetragonality in BaTiO$_3$
Authors:
Simon Mellaerts,
Jin Won Seo,
Valeri Afanas'ev,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
Understanding ferroelectricity is of both fundamental and technological importance to further stimulate the development of new materials designs and manipulations. Here, we perform an in-depth first-principle study on the well-known ferroelectric barium titanate BaTiO$_{3}$ under a hydrostatic negative pressure, showing an isosymmetric phase transition to a supertetragonal phase with high $c/a$ ra…
▽ More
Understanding ferroelectricity is of both fundamental and technological importance to further stimulate the development of new materials designs and manipulations. Here, we perform an in-depth first-principle study on the well-known ferroelectric barium titanate BaTiO$_{3}$ under a hydrostatic negative pressure, showing an isosymmetric phase transition to a supertetragonal phase with high $c/a$ ratio of $\sim1.3$. The microscopic origin and driving mechanisms of this phase transition are identified as a drastic change of the covalently $π$-bonded electrons. These findings provide guidance in the search for new supertetragonal phases, with great opportunities for novel multiferroic materials; and can be generalized in the understanding of other isosymmetric phase transitions.
△ Less
Submitted 19 January, 2022;
originally announced January 2022.
-
CaCu$_3$Ru$_4$O$_{12}$: a high Kondo-temperature transition metal oxide
Authors:
D. Takegami,
C. Y. Kuo,
K. Kasebayashi,
J. -G. Kim,
C. F. Chang,
C. E. Liu,
C. N. Wu,
D. Kasinathan,
S. G. Altendorf,
K. Hoefer,
F. Meneghin,
A. Marino,
Y. F. Liao,
K. D. Tsuei,
C. T. Chen,
K. -T. Ko,
A. Günther,
S. G. Ebbinghaus,
J. W. Seo,
D. H. Lee,
G. Ryu,
A. C. Komarek,
S. Sugano,
Y. Shimakawa,
A. Tanaka
, et al. (4 additional authors not shown)
Abstract:
We present a comprehensive study of CaCu$_3$Ru$_4$O$_{12}$ using bulk sensitive hard and soft x-ray spectroscopy combined with local-density approximation (LDA) + dynamical mean-field theory (DMFT) calculations. Correlation effects on both the Cu and Ru ions can be observed. From the Cu $2p$ core level spectra we deduce the presence of magnetic Cu$^{2+}$ ions hybridized with a reservoir of itinera…
▽ More
We present a comprehensive study of CaCu$_3$Ru$_4$O$_{12}$ using bulk sensitive hard and soft x-ray spectroscopy combined with local-density approximation (LDA) + dynamical mean-field theory (DMFT) calculations. Correlation effects on both the Cu and Ru ions can be observed. From the Cu $2p$ core level spectra we deduce the presence of magnetic Cu$^{2+}$ ions hybridized with a reservoir of itinerant electrons. The strong photon energy dependence of the valence band allows us to disentangle the Ru, Cu, and O contributions and thus to optimize the DMFT calculations. The calculated spin and charge susceptibilities show that the transition metal oxide CaCu$_3$Ru$_4$O$_{12}$ must be classified as a Kondo system and that the Kondo temperature is in the range of 500-1000 K.
△ Less
Submitted 6 December, 2021;
originally announced December 2021.
-
An efficient direct band-gap transition in germanium by three-dimensional strain
Authors:
Simon Mellaerts,
Valeri Afanasiev,
Jin Won Seo,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
Complementary to the development of highly three-dimensional (3D) integrated circuits in the continuation of Moore's law, there has been a growing interest in new 3D deformation strategies to improve device performance. To continue this search for new 3D deformation techniques, it is essential to explore beforehand - using computational predictive methods - which strain tensor leads to the desired…
▽ More
Complementary to the development of highly three-dimensional (3D) integrated circuits in the continuation of Moore's law, there has been a growing interest in new 3D deformation strategies to improve device performance. To continue this search for new 3D deformation techniques, it is essential to explore beforehand - using computational predictive methods - which strain tensor leads to the desired properties. In this work, we study germanium (Ge) under an isotropic 3D strain on the basis of first-principle methods. The transport and optical properties are studied by a fully ab initio Boltzmann transport equation and many-body Bethe-Salpeter equation (BSE) approach, respectively. Our findings show that a direct band gap in Ge could be realized with only 0.34% triaxial tensile strain (negative pressure) and without the challenges associated with Sn doping. At the same time a significant increase in refractive index and carrier mobility - particularly for electrons - is observed. These results demonstrate that there is a huge potential in exploring the 3D deformation space for semiconductors - and potentially many other materials - in order to optimize their properties.
△ Less
Submitted 8 June, 2021; v1 submitted 24 February, 2021;
originally announced February 2021.
-
Room temperature Mott metal-insulator transition in V2O3 compounds induced via strain-engineering
Authors:
P. Homm,
M. Menghini,
J. W. Seo,
S. Peters,
J. -P. Locquet
Abstract:
Vanadium sesquioxide (V2O3) is an archetypal Mott insulator in which the atomic positions and electron correlations change as temperature, pressure or doping are varied giving rise to different structural, magnetic or electronic phase transitions. Remarkably, the isostructural Mott transition in Cr-doped V2O3 between paramagnetic metallic and insulating phase observed in bulk has been elusive in t…
▽ More
Vanadium sesquioxide (V2O3) is an archetypal Mott insulator in which the atomic positions and electron correlations change as temperature, pressure or doping are varied giving rise to different structural, magnetic or electronic phase transitions. Remarkably, the isostructural Mott transition in Cr-doped V2O3 between paramagnetic metallic and insulating phase observed in bulk has been elusive in thin film compounds so far. Here, via continuous lattice deformations induced by heteroepitaxy we demonstrate a room temperature Mott metal-insulator transition in 1.5% Cr-doped and pure V2O3 thin films. By means of a controlled epitaxial strain, not only the structure but also the intrinsic electronic and optical properties of the thin films are stabilized at different intermediate states between the metallic and insulating phases, inaccessible in bulk materials. This leads to films with unique features such as a colossal change in room temperature resistivity (DR/R up to 100,000 %) and a broad range of optical constant values, as consequence of a strain-modulated bandgap. We propose a new phase diagram for pure and Cr-doped V2O3 thin films with the engineered in-plane lattice constant as a tuneable parameter. Our results demonstrate that controlling phase transitions in correlated systems by epitaxial strain offers a radical new approach to create the next generation of Mott devices.
△ Less
Submitted 12 January, 2021;
originally announced January 2021.
-
Quarter-filled Kane-Mele Hubbard model: Dirac half-metals
Authors:
Simon Mellaerts,
Ruishen Meng,
Valeri Afanasiev,
Jin Won Seo,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
Recent experimental success in the realization of two-dimensional (2D) magnetism has stimulated the search for new magnetic 2D materials with strong magnetic anisotropy and high Curie temperature. One promising subgroup of 2D magnetic systems are Dirac half-metals (DHM) which have gained a lot of interest recently, as they host a high-temperature quantum anomalous Hall effect (QAHE). This article…
▽ More
Recent experimental success in the realization of two-dimensional (2D) magnetism has stimulated the search for new magnetic 2D materials with strong magnetic anisotropy and high Curie temperature. One promising subgroup of 2D magnetic systems are Dirac half-metals (DHM) which have gained a lot of interest recently, as they host a high-temperature quantum anomalous Hall effect (QAHE). This article discusses predictions for intrinsic DHMs and identifies them as realizations of the Kane-Mele Hubbard model at quarter filling. This proposed unification contributes to a firmer understanding of these materials and suggests pathways for the discovery of new DHM systems.
△ Less
Submitted 9 January, 2021;
originally announced January 2021.
-
Two-dimensional honeycomb-kagome V2O3: a robust room-temperature magnetic Chern insulator interfaced with graphene
Authors:
Simon Mellaerts,
Ruishen Meng,
Mariela Menghini,
Valeri Afanasiev,
Jin Won Seo,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
The possibility of dissipationless chiral edge states without the need of an external magnetic field in the quantum anomalous Hall effect (QAHE) offers a great potential in electronic/spintronic applications. The biggest hurdle for the realization of a room-temperature magnetic Chern insulator is to find a structurally stable material with a sufficiently large energy gap and Curie temperature that…
▽ More
The possibility of dissipationless chiral edge states without the need of an external magnetic field in the quantum anomalous Hall effect (QAHE) offers a great potential in electronic/spintronic applications. The biggest hurdle for the realization of a room-temperature magnetic Chern insulator is to find a structurally stable material with a sufficiently large energy gap and Curie temperature that can be easily implemented in electronic devices. This work based on first-principle methods shows that a single atomic layer of V2O3 with honeycomb-kagome (HK) lattice is structurally stable with a spin-polarized Dirac cone which gives rise to a room-temperature QAHE by the existence of an atomic on-site spin-orbit coupling (SOC). Moreover, by a strain and substrate study, it was found that the quantum anomalous Hall system is robust against small deformations and can be supported by a graphene substrate.
△ Less
Submitted 8 June, 2021; v1 submitted 6 January, 2021;
originally announced January 2021.
-
Collapse of the low temperature insulating state in Cr-doped V$_2$O$_3$ thin films
Authors:
Pía Homm,
Leander Dillemans,
Mariela Menghini,
Bart Van Bilzen,
Petar Bakalov,
Chen-Yi Su,
Ruben Lieten,
Michel Houssa,
Davoud Nasr Esfahani,
Lucian Covaci,
Francois Peeters,
Jin Won Seo,
Jean-Pierre Locquet
Abstract:
We have grown epitaxial Cr-doped V$_2$O$_3$ thin films with Cr concentrations between $0$ and $20\%$ on $(0001)$-Al$_2$O$_3$ by oxygen-assisted molecular beam epitaxy. For the highly doped samples (> $3\%$), a regular and monotonous increase of the resistance with decreasing temperature is measured. Strikingly, in the low doping samples (between $1\%$ and $3\%$), a collapse of the insulating state…
▽ More
We have grown epitaxial Cr-doped V$_2$O$_3$ thin films with Cr concentrations between $0$ and $20\%$ on $(0001)$-Al$_2$O$_3$ by oxygen-assisted molecular beam epitaxy. For the highly doped samples (> $3\%$), a regular and monotonous increase of the resistance with decreasing temperature is measured. Strikingly, in the low doping samples (between $1\%$ and $3\%$), a collapse of the insulating state is observed with a reduction of the low temperature resistivity by up to 5 orders of magnitude. A vacuum annealing at high temperature of the films recovers the low temperature insulating state for doping levels below $3\%$ and increases the room temperature resistivity towards the values of Cr-doped V$_2$O$_3$ single crystals. It is well-know that oxygen excess stabilizes a metallic state in V$_2$O$_3$ single crystals. Hence, we propose that Cr doping promotes oxygen excess in our films during deposition leading to the collapse of the low temperature insulating state at low Cr concentrations. These results suggest that slightly Cr-doped V$_2$O$_3$ films can be interesting candidates for field effect devices.
△ Less
Submitted 19 September, 2015;
originally announced September 2015.
-
Tunable ferroelectricity in artificial tri-layer superlattices comprised of non-ferroic components
Authors:
K. Rogdakis,
J. W. Seo,
Z. Viskadourakis,
Y. Wang,
L. F. N. Ah Qune,
E. Choi,
J. D. Burton,
E. Y. Tsymbal,
J. Lee,
C. Panagopoulos
Abstract:
Heterostructured material systems devoid of ferroic components are presumed not to display ordering associated with ferroelectricity. In heterostructures composed of transition metal oxides, however, the disruption introduced by an interface can affect the balance of the competing interactions among electronic spins, charges and orbitals. This has led to the emergence of properties absent in the o…
▽ More
Heterostructured material systems devoid of ferroic components are presumed not to display ordering associated with ferroelectricity. In heterostructures composed of transition metal oxides, however, the disruption introduced by an interface can affect the balance of the competing interactions among electronic spins, charges and orbitals. This has led to the emergence of properties absent in the original building blocks of a heterostructure, including metallicity, magnetism and superconductivity. Here we report the discovery of ferroelectricity in artificial tri-layer superlattices consisting solely of non-ferroelectric NdMnO3/SrMnO3/LaMnO3 layers. Ferroelectricity was observed below 40 K exhibiting strong tunability by superlattice periodicity. Furthermore, magnetoelectric coupling resulted in 150% magnetic modulation of the polarization. Density functional calculations indicate that broken space inversion symmetry and mixed valency, because of cationic asymmetry and interfacial polar discontinuity, respectively, give rise to the observed behavior. Our results demonstrate the engineering of asymmetric layered structures with emergent ferroelectric and magnetic field tunable functions distinct from that of normal devices, for which the components are typically ferroelectrics.
△ Less
Submitted 23 September, 2012;
originally announced September 2012.
-
Ultrafast carrier phonon dynamics in NaOH-reacted graphite oxide film
Authors:
Dongwook Lee,
Xingquan Zou,
Xi Zhu,
J. W. Seo,
Jacqueline M. Cole,
Federica Bondino,
Elena Magnano,
Saritha K. Nair,
Haibin Su
Abstract:
NaOH-reacted graphite oxide film was prepared by decomposing epoxy groups in graphite oxide into hydroxyl and -ONa groups with NaOH solution. Ultrafast carrier dynamics of the sample were studied by time-resolved transient differential reflection (\DeltaR/R). The data show two exponential relaxation processes. The slow relaxation process (\sim2ps) is ascribed to low energy acoustic phonon mediated…
▽ More
NaOH-reacted graphite oxide film was prepared by decomposing epoxy groups in graphite oxide into hydroxyl and -ONa groups with NaOH solution. Ultrafast carrier dynamics of the sample were studied by time-resolved transient differential reflection (\DeltaR/R). The data show two exponential relaxation processes. The slow relaxation process (\sim2ps) is ascribed to low energy acoustic phonon mediated scattering. The electron-phonon coupling and first-principles calculation results demonstrate that - OH and -ONa groups in the sample are strongly coupled. Thus, we attribute the fast relaxation process (\sim0.17ps) to the coupling of hydroxyl and -ONa groups in the sample.
△ Less
Submitted 16 July, 2012;
originally announced July 2012.
-
Ferromagnetic interaction between Cu ions in the bulk region of Cu-doped ZnO nanowires
Authors:
T. Kataoka,
Y. Yamazaki,
V. R. Singh,
A. Fujimori,
F. -H. Chang,
H. -J. Lin,
D. J. Huang,
C. T. Chen,
G. Z. Xing,
J. W. Seo,
C. Panagopoulos,
T. Wu
Abstract:
We have studied the electronic structure and the magnetism of Cu-doped ZnO nanowires, which have been reported to show ferromagnetism at room temperature [G. Z. Xing ${et}$ ${al}$., Adv. Mater. {\bf 20}, 3521 (2008).], by x-ray photoemission spectroscopy (XPS), x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). From the XPS and XAS results, we find that the Cu atoms…
▽ More
We have studied the electronic structure and the magnetism of Cu-doped ZnO nanowires, which have been reported to show ferromagnetism at room temperature [G. Z. Xing ${et}$ ${al}$., Adv. Mater. {\bf 20}, 3521 (2008).], by x-ray photoemission spectroscopy (XPS), x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). From the XPS and XAS results, we find that the Cu atoms are in the "Cu$^{3+}$" state with mixture of Cu$^{2+}$ in the bulk region ($\sim$ 100 nm), and that "Cu$^{3+}$" ions are dominant in the surface region ($\sim$ 5 nm), i.e., the surface electronic structure of the surface region differs from the bulk one. From the magnetic field and temperature dependences of the XMCD intensity, we conclude that the ferromagnetic interaction in ZnO:Cu NWs comes from the Cu$^{2+}$ and "Cu$^{3+}$" states in the bulk region, and that most of the doped Cu ions are magnetically inactive probably because they are antiferromagnetically coupled with each other.
△ Less
Submitted 16 October, 2011;
originally announced October 2011.
-
Metallic characteristics in superlattices composed of insulators, NdMnO3/SrMnO3/LaMnO3
Authors:
J. W. Seo,
B. T. Phan,
J. Lee,
H. -D. Kim,
C. Panagopoulos
Abstract:
We report on the electronic properties of superlattices composed of three different antiferromagnetic insulators, NdMnO3/SrMnO3/LaMnO3 grown on SrTiO3 substrates. Photoemission spectra obtained by tuning the x-ray energy at the Mn 2p -> 3d edge show a Fermi cut-off, indicating metallic behavior mainly originating from Mn e_g electrons. Furthermore, the density of states near the Fermi energy and t…
▽ More
We report on the electronic properties of superlattices composed of three different antiferromagnetic insulators, NdMnO3/SrMnO3/LaMnO3 grown on SrTiO3 substrates. Photoemission spectra obtained by tuning the x-ray energy at the Mn 2p -> 3d edge show a Fermi cut-off, indicating metallic behavior mainly originating from Mn e_g electrons. Furthermore, the density of states near the Fermi energy and the magnetization obey a similar temperature dependence, suggesting a correlation between the spin and charge degrees of freedom at the interfaces of these oxides.
△ Less
Submitted 25 April, 2011;
originally announced April 2011.
-
The structure of graphite oxide: Investigation of its surface chemical groups
Authors:
D. W. Lee,
L. De Los Santos V.,
J. W. Seo,
L. Leon Felix,
A. Bustamante D.,
J. M. Cole,
C. ~H. ~W. ~Barnes
Abstract:
The structure of graphite oxide (GO) has been systematically studied using various tools such as SEM, TEM, XRD, Fourier transform infrared spectroscopy (FT-IR), X-ray photoemission spectroscopy (XPS), 13C solid state NMR, and O K-edge X-ray absorption near edge structure (XANES). The TEM data reveal that GO consists of amorphous and crystalline phases. The XPS data show that some carbon atoms have…
▽ More
The structure of graphite oxide (GO) has been systematically studied using various tools such as SEM, TEM, XRD, Fourier transform infrared spectroscopy (FT-IR), X-ray photoemission spectroscopy (XPS), 13C solid state NMR, and O K-edge X-ray absorption near edge structure (XANES). The TEM data reveal that GO consists of amorphous and crystalline phases. The XPS data show that some carbon atoms have sp3 orbitals and others have sp2 orbitals. The ratio of sp2 to sp3 bonded carbon atoms decreases as sample preparation times increase. The 13C solid-state NMR spectra of GO indicate the existence of -OH and -O- groups for which peaks appear at 60 and 70 ppm, respectively. FT-IR results corroborate these findings. The existence of ketone groups is also implied by FT-IR, which is verified by O K-edge XANES and 13C solid-state NMR. We propose a new model for GO based on the results; -O-, -OH, and -C=O groups are on the surface.
△ Less
Submitted 5 August, 2010;
originally announced August 2010.
-
Preparation of carbon nanotubes from graphite powder at room temperature
Authors:
D. W. Lee,
J. W. Seo
Abstract:
We develop a new chemical route to prepare carbon nanotubes at room temperature. Graphite powder is immersed in a mixed solution of nitric and sulfuric acid with potassium chlorate. After heating the solution up to 70°C and leaving them in the air for 3 days, we obtained carbon nanotube bundles. This process could provide an easy and inexpensive method for the preparation of carbon nanotubes.
We develop a new chemical route to prepare carbon nanotubes at room temperature. Graphite powder is immersed in a mixed solution of nitric and sulfuric acid with potassium chlorate. After heating the solution up to 70°C and leaving them in the air for 3 days, we obtained carbon nanotube bundles. This process could provide an easy and inexpensive method for the preparation of carbon nanotubes.
△ Less
Submitted 23 February, 2011; v1 submitted 7 July, 2010;
originally announced July 2010.
-
$sp^{2}$/$sp^{3}$ carbon ratio in graphite oxide with different preparation times
Authors:
D. W. Lee,
J. W. Seo
Abstract:
Graphite oxide is an amorphous insulator. Although several models have been suggested, its structure remains controversial. To elucidate this issue, 5 samples were prepared by the Brodie process and the Staudenmaier process. The electronic structure of graphite oxide was examined with x-ray absorption near edge structure and the ratio of $sp^{2}$ to $sp^{3}$ bonded carbon atoms was investigated wi…
▽ More
Graphite oxide is an amorphous insulator. Although several models have been suggested, its structure remains controversial. To elucidate this issue, 5 samples were prepared by the Brodie process and the Staudenmaier process. The electronic structure of graphite oxide was examined with x-ray absorption near edge structure and the ratio of $sp^{2}$ to $sp^{3}$ bonded carbon atoms was investigated with x-ray photoemission spectroscopy as a function of sample preparation times. It was found that this ratio approaches 0.3 exponentially with a characteristic time of 1.5 weeks. We believe this long characteristic time is the reason the structure has remained unclear.
△ Less
Submitted 1 March, 2011; v1 submitted 1 July, 2010;
originally announced July 2010.
-
Tunable magnetic interaction at the atomic scale in oxide heterostructures
Authors:
J. W. Seo,
W. Prellier,
P. Padhan,
P. Boullay,
J. -Y. Kim,
H. G. Lee,
C. D. Batista,
I. Martin,
Elbert E. M. Chia,
T. Wu,
B. -G. Cho,
C. Panagopoulos
Abstract:
We report on a systematic study of a number of structurally identical but chemically distinct transition metal oxides in order to determine how the material-specific properties such as the composition and the strain affect the properties at the interface of heterostructures. Our study considers a series of structures containing two layers of ferromagnetic SrRuO3, with antiferromagnetic insulating…
▽ More
We report on a systematic study of a number of structurally identical but chemically distinct transition metal oxides in order to determine how the material-specific properties such as the composition and the strain affect the properties at the interface of heterostructures. Our study considers a series of structures containing two layers of ferromagnetic SrRuO3, with antiferromagnetic insulating manganites sandwiched in between. The results demonstrate how to control the strength and relative orientation of interfacial ferromagnetism in correlated electron materials by means of valence state variation and substrate-induced strain, respectively.
△ Less
Submitted 18 October, 2010; v1 submitted 18 June, 2010;
originally announced June 2010.
-
Relaxor characteristics at the interfaces of [NdMnO3/SrMnO3/LaMnO3] superlattices
Authors:
J. W. Seo,
B. T. Phan,
J. Stahn,
J. Lee,
C. Panagopoulos
Abstract:
We have investigated the magnetic properties of transition metal oxide superlattices with broken inversion symmetry composed of three different antiferromagnetic insulators, [NdMnO3/SrMnO3/LaMnO3]. In the superlattices studied here, we identify the emergence of a relaxor, glassy-like behavior below spin glass temperature, T=36K. Our results offer the possibility to study and utilize magnetically m…
▽ More
We have investigated the magnetic properties of transition metal oxide superlattices with broken inversion symmetry composed of three different antiferromagnetic insulators, [NdMnO3/SrMnO3/LaMnO3]. In the superlattices studied here, we identify the emergence of a relaxor, glassy-like behavior below spin glass temperature, T=36K. Our results offer the possibility to study and utilize magnetically metastable devices confined in nano-scale interfaces.
△ Less
Submitted 25 October, 2010; v1 submitted 3 June, 2010;
originally announced June 2010.
-
Magnetism in graphite oxide: The role of epoxy groups
Authors:
D. W. Lee,
J. M. Cole,
J. W. Seo,
S. S. Saxena,
C. H. W. Barnes,
E. E. M. Chia,
C. Panagopoulos
Abstract:
We investigate the magnetism in graphite by controlled oxidation. Our approach renders graphite an insulator while maintaining its structure. Fourier transform infrared spectroscopy and X-ray absorption near edge structure spectra reveal that graphite oxide has epoxy groups on its surface and it is not thermally stable. Magnetic susceptibility data exhibit negative Curie temperature, field irrever…
▽ More
We investigate the magnetism in graphite by controlled oxidation. Our approach renders graphite an insulator while maintaining its structure. Fourier transform infrared spectroscopy and X-ray absorption near edge structure spectra reveal that graphite oxide has epoxy groups on its surface and it is not thermally stable. Magnetic susceptibility data exhibit negative Curie temperature, field irreversibility, and slow relaxation. The magnetic properties diminish after the epoxy groups are destroyed. The overall results indicate the unexpected magnetism is associated with the presence of epoxy groups.
△ Less
Submitted 22 February, 2011; v1 submitted 30 May, 2010;
originally announced May 2010.
-
Transparent and flexible polymerized graphite oxide thin film with frequency-dependent dielectric constant
Authors:
D. W. Lee,
J. W. Seo,
G. R. Jelbert,
L. de Los Santos V.,
J. M. Cole,
C. Panagopoulos,
C. H. W. Barnes
Abstract:
Here we report on the preparation of transparent and flexible polymerized graphite oxide, which is composed of carbons with sp3-hybridized orbitals and a non-planar ring structure, and which demonstrates dispersion in its dielectric constant at room temperature. This frequency dependence renders the material suitable for creating miniaturized, flexible, and transparent variable capacitors, allowin…
▽ More
Here we report on the preparation of transparent and flexible polymerized graphite oxide, which is composed of carbons with sp3-hybridized orbitals and a non-planar ring structure, and which demonstrates dispersion in its dielectric constant at room temperature. This frequency dependence renders the material suitable for creating miniaturized, flexible, and transparent variable capacitors, allowing for smaller and simpler integrated electronic devices. We discuss this polarizability in terms of space charge effects.
△ Less
Submitted 30 May, 2010;
originally announced May 2010.
