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Single-crystal epitaxial europium iron garnet films with strain-induced perpendicular magnetic anisotropy: structural, strain, magnetic, and spin transport properties
Authors:
M. X. Guo,
C. K. Cheng,
Y. C. Liu,
C. N. Wu,
W. N. Chen,
T. Y Chen,
C. T. Wu,
C. H. Hsu,
S. Q. Zhou,
C. F. Chang,
L. H. Tjeng,
S. F. Lee,
C. F. Pai,
M. Hong,
J. Kwo
Abstract:
Single-crystal europium iron garnet (EuIG) thin films epitaxially strain-grown on gadolinium gallium garnet (GGG)(100) substrates using off-axis sputtering have strain-induced perpendicular magnetic anisotropy (PMA). By varying the sputtering conditions, we have tuned the europium/iron (Eu/Fe) composition ratios in the films to tailor the film strains. The films exhibited an extremely smooth, part…
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Single-crystal europium iron garnet (EuIG) thin films epitaxially strain-grown on gadolinium gallium garnet (GGG)(100) substrates using off-axis sputtering have strain-induced perpendicular magnetic anisotropy (PMA). By varying the sputtering conditions, we have tuned the europium/iron (Eu/Fe) composition ratios in the films to tailor the film strains. The films exhibited an extremely smooth, particle-free surface with roughness as low as 0.1 nm as observed using atomic force microscopy. High-resolution x-ray diffraction analysis and reciprocal space maps showed in-plane epitaxial film growth, very smooth film/substrate interface, excellent film crystallinity with a small full width at half maximum of 0.012$^{\circ}$ in the rocking curve scans, and an in-plane compressive strain without relaxation. In addition, spherical aberration-corrected scanning transmission electron microscopy showed an atomically abrupt interface between the EuIG film and GGG. The measured squarish out-of-plane magnetization-field hysteresis loops by vibrating sample magnetometry in conjunction with the measurements from angle-dependent x-ray magnetic dichroism demonstrated the PMA in the films. We have tailored the magnetic properties of the EuIG thin films, including saturation magnetization ranging from 71.91 to 124.51 emu/c.c. (increase with the (Eu/Fe) ratios), coercive field from 27 to 157.64 Oe, and the strength of PMA field ($H_\bot$) increasing from 4.21 to 18.87 kOe with the in-plane compressive strain from -0.774 to -1.044%. We have also investigated spin transport in Pt/EuIG bi-layer structure and evaluated the real part of spin mixing conductance to be $3.48\times10^{14} Ω^{-1}m^{-2}$. We demonstrated the current-induced magnetization switching with a low critical switching current density of $3.5\times10^6 A/cm^2$, showing excellent potential for low-dissipation spintronic devices.
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Submitted 11 January, 2022;
originally announced January 2022.
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CaCu$_3$Ru$_4$O$_{12}$: a high Kondo-temperature transition metal oxide
Authors:
D. Takegami,
C. Y. Kuo,
K. Kasebayashi,
J. -G. Kim,
C. F. Chang,
C. E. Liu,
C. N. Wu,
D. Kasinathan,
S. G. Altendorf,
K. Hoefer,
F. Meneghin,
A. Marino,
Y. F. Liao,
K. D. Tsuei,
C. T. Chen,
K. -T. Ko,
A. Günther,
S. G. Ebbinghaus,
J. W. Seo,
D. H. Lee,
G. Ryu,
A. C. Komarek,
S. Sugano,
Y. Shimakawa,
A. Tanaka
, et al. (4 additional authors not shown)
Abstract:
We present a comprehensive study of CaCu$_3$Ru$_4$O$_{12}$ using bulk sensitive hard and soft x-ray spectroscopy combined with local-density approximation (LDA) + dynamical mean-field theory (DMFT) calculations. Correlation effects on both the Cu and Ru ions can be observed. From the Cu $2p$ core level spectra we deduce the presence of magnetic Cu$^{2+}$ ions hybridized with a reservoir of itinera…
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We present a comprehensive study of CaCu$_3$Ru$_4$O$_{12}$ using bulk sensitive hard and soft x-ray spectroscopy combined with local-density approximation (LDA) + dynamical mean-field theory (DMFT) calculations. Correlation effects on both the Cu and Ru ions can be observed. From the Cu $2p$ core level spectra we deduce the presence of magnetic Cu$^{2+}$ ions hybridized with a reservoir of itinerant electrons. The strong photon energy dependence of the valence band allows us to disentangle the Ru, Cu, and O contributions and thus to optimize the DMFT calculations. The calculated spin and charge susceptibilities show that the transition metal oxide CaCu$_3$Ru$_4$O$_{12}$ must be classified as a Kondo system and that the Kondo temperature is in the range of 500-1000 K.
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Submitted 6 December, 2021;
originally announced December 2021.
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Interfacing topological insulators and ferrimagnets: Bi$_2$Te$_3$ and Fe$_3$O$_4$ heterostructures grown by molecular beam epitaxy
Authors:
V. M. Pereira,
C. N. Wu,
C. -A. Knight,
A. Choa,
L. H. Tjeng,
S. G. Altendorf
Abstract:
Relying on the magnetism induced by the proximity effect in heterostructures of topological insulators and magnetic insulators is one of the promising routes to achieve the quantum anomalous Hall effect. Here we investigate heterostructures of Bi$_2$Te$_3$ and Fe$_3$O$_4$. By growing two different types of heterostructures by molecular beam epitaxy, Fe$_3$O$_4$ on Bi$_2$Te$_3$ and Bi$_2$Te$_3$ on…
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Relying on the magnetism induced by the proximity effect in heterostructures of topological insulators and magnetic insulators is one of the promising routes to achieve the quantum anomalous Hall effect. Here we investigate heterostructures of Bi$_2$Te$_3$ and Fe$_3$O$_4$. By growing two different types of heterostructures by molecular beam epitaxy, Fe$_3$O$_4$ on Bi$_2$Te$_3$ and Bi$_2$Te$_3$ on Fe$_3$O$_4$, we explore differences in chemical stability, crystalline quality, electronic structure, and transport properties. We find the heterostructure Bi$_2$Te$_3$ on Fe$_3$O$_4$ to be a more viable approach, with transport signatures in agreement with a gap opening in the topological surface states.
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Submitted 26 June, 2020;
originally announced June 2020.
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Molecular beam epitaxy preparation and in situ characterization of FeTe thin films
Authors:
V. M. Pereira,
C. N. Wu,
C. E. Liu,
S. -S. Liao,
C. F. Chang,
C. -Y. Kuo,
C. Koz,
U. Schwarz,
H. -J. Lin,
C. T. Chen. L. H. Tjeng,
S. G. Altendorf
Abstract:
We have synthesized Fe$_{1+y}$Te thin films by means of molecular beam epitaxy (MBE) under Te-limited growth conditions. We found that epitaxial layer-by-layer growth is possible for a wide range of excess Fe values, wider than expected from what is known on the bulk material. Using x-ray magnetic circular dichroism spectroscopy at the Fe L$_{2,3}$ and Te M$_{4,5}$ edges, we observed that films wi…
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We have synthesized Fe$_{1+y}$Te thin films by means of molecular beam epitaxy (MBE) under Te-limited growth conditions. We found that epitaxial layer-by-layer growth is possible for a wide range of excess Fe values, wider than expected from what is known on the bulk material. Using x-ray magnetic circular dichroism spectroscopy at the Fe L$_{2,3}$ and Te M$_{4,5}$ edges, we observed that films with high excess Fe contain ferromagnetic clusters while films with lower excess Fe remain nonmagnetic. Moreover, x-ray absorption spectroscopy showed that it is possible to obtain films with very similar electronic structure as that of a high quality bulk single crystal Fe$_{1.14}$Te. Our results suggest that MBE with Te-limited growth may provide an opportunity to synthesize FeTe films with smaller amounts of excess Fe as to come closer to a possible superconducting phase.
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Submitted 21 February, 2020;
originally announced February 2020.
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Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces
Authors:
C. C. Chen,
K. H. M. Chen,
Y. T. Fanchiang,
C. C. Tseng,
S. R. Yang,
C. N. Wu,
M. X. Guo,
C. K. Cheng,
C. T. Wu,
M. Hong,
J. Kwo
Abstract:
The integration of quantum materials like topological insulators (TIs) with magnetic insulators (MIs) has important technological implications for spintronics and quantum computing. Here we report excellent crystallinity of c-axis oriented epitaxial TI films Bi2Se3 grown on MI films, a rare earth iron garnet (ReIG), such as thulium iron garnet (Tm3Fe5O12, TmIG) by molecular beam epitaxy (MBE) with…
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The integration of quantum materials like topological insulators (TIs) with magnetic insulators (MIs) has important technological implications for spintronics and quantum computing. Here we report excellent crystallinity of c-axis oriented epitaxial TI films Bi2Se3 grown on MI films, a rare earth iron garnet (ReIG), such as thulium iron garnet (Tm3Fe5O12, TmIG) by molecular beam epitaxy (MBE) with a Se-buffered low-temperature (SBLT) growth technique. We demonstrated a streaky reflection high-energy electron diffraction pattern starting from the very first quintuple layer of Bi2Se3, indicating the high-quality interface between TmIG and Bi2Se3, a prerequisite for studying interfacial exchange coupling effects. The strong interfacial exchange interaction was manifested by observations of anomalous Hall effect in the Bi2Se3/TmIG bilayer and a shift of ferromagnetic resonance field of TmIG induced by Bi2Se3. We have reproducibly grown high-quality Bi2Se3/ReIG and interfaces using this new TI growth method, which may be applied to grow other types of van der Waals (vdW) hetero-structures.
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Submitted 12 September, 2018;
originally announced September 2018.
