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CaCu$_3$Ru$_4$O$_{12}$: a high Kondo-temperature transition metal oxide
Authors:
D. Takegami,
C. Y. Kuo,
K. Kasebayashi,
J. -G. Kim,
C. F. Chang,
C. E. Liu,
C. N. Wu,
D. Kasinathan,
S. G. Altendorf,
K. Hoefer,
F. Meneghin,
A. Marino,
Y. F. Liao,
K. D. Tsuei,
C. T. Chen,
K. -T. Ko,
A. Günther,
S. G. Ebbinghaus,
J. W. Seo,
D. H. Lee,
G. Ryu,
A. C. Komarek,
S. Sugano,
Y. Shimakawa,
A. Tanaka
, et al. (4 additional authors not shown)
Abstract:
We present a comprehensive study of CaCu$_3$Ru$_4$O$_{12}$ using bulk sensitive hard and soft x-ray spectroscopy combined with local-density approximation (LDA) + dynamical mean-field theory (DMFT) calculations. Correlation effects on both the Cu and Ru ions can be observed. From the Cu $2p$ core level spectra we deduce the presence of magnetic Cu$^{2+}$ ions hybridized with a reservoir of itinera…
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We present a comprehensive study of CaCu$_3$Ru$_4$O$_{12}$ using bulk sensitive hard and soft x-ray spectroscopy combined with local-density approximation (LDA) + dynamical mean-field theory (DMFT) calculations. Correlation effects on both the Cu and Ru ions can be observed. From the Cu $2p$ core level spectra we deduce the presence of magnetic Cu$^{2+}$ ions hybridized with a reservoir of itinerant electrons. The strong photon energy dependence of the valence band allows us to disentangle the Ru, Cu, and O contributions and thus to optimize the DMFT calculations. The calculated spin and charge susceptibilities show that the transition metal oxide CaCu$_3$Ru$_4$O$_{12}$ must be classified as a Kondo system and that the Kondo temperature is in the range of 500-1000 K.
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Submitted 6 December, 2021;
originally announced December 2021.
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Charge transfer energy in iridates: a hard x-ray photoelectron spectroscopy study
Authors:
D. Takegami,
D. Kasinathan,
K. K. Wolff,
S. G. Altendorf,
C. F. Chang,
K. Hoefer,
A. Melendez-Sans,
Y. Utsumi,
F. Meneghin,
T. D. Ha,
C. H. Yen,
K. Chen,
C. Y. Kuo,
Y. F. Liao,
K. D. Tsuei,
R. Morrow,
S. Wurmehl,
B. Büchner,
B. E. Prasad,
M. Jansen,
A. C. Komarek,
P. Hansmann,
L. H. Tjeng
Abstract:
We have investigated the electronic structure of iridates in the double perovskite crystal structure containing either Ir$^{4+}$ or Ir$^{5+}$ using hard x-ray photoelectron spectroscopy. The experimental valence band spectra can be well reproduced using tight binding calculations including only the Ir $5d$, O $2p$ and O $2s$ orbitals with parameters based on the downfolding of the density-function…
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We have investigated the electronic structure of iridates in the double perovskite crystal structure containing either Ir$^{4+}$ or Ir$^{5+}$ using hard x-ray photoelectron spectroscopy. The experimental valence band spectra can be well reproduced using tight binding calculations including only the Ir $5d$, O $2p$ and O $2s$ orbitals with parameters based on the downfolding of the density-functional band structure results. We found that regardless of the A and B cations, the A$_2$BIrO$_6$ iridates have essentially zero O $2p$ to Ir $5d$ charge transfer energies. Hence, double perovskite iridates turn out to be extremely covalent systems with the consequence being that the magnetic exchange interactions become very long-ranged, thereby hampering the materialization of the long-sought Kitaev physics. Nevertheless, it still would be possible to realize a spin-liquid system using the iridates with a proper tuning of the various competing exchange interactions.
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Submitted 25 May, 2020;
originally announced May 2020.
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Electronic signature of the vacancy ordering in NbO (Nb3O3)
Authors:
A. K. Efimenko,
N. Hollmann,
K. Hoefer,
J. Weinen,
D. Takegami,
K. K. Wolff,
S. G. Altendorf,
Z. Hu,
A. D. Rata,
A. C. Komarek,
A. A. Nugroho,
Y. F. Liao,
K. -D. Tsuei,
H. H. Hsieh,
H. -J. Lin,
C. T. Chen,
L. H. Tjeng,
D. Kasinathan
Abstract:
We investigated the electronic structure of the vacancy-ordered 4d-transition metal monoxide NbO (Nb3O3) using angle-integrated soft- and hard-x-ray photoelectron spectroscopy as well as ultra-violet angle-resolved photoelectron spectroscopy. We found that density-functional-based band structure calculations can describe the spectral features accurately provided that self-interaction effects are t…
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We investigated the electronic structure of the vacancy-ordered 4d-transition metal monoxide NbO (Nb3O3) using angle-integrated soft- and hard-x-ray photoelectron spectroscopy as well as ultra-violet angle-resolved photoelectron spectroscopy. We found that density-functional-based band structure calculations can describe the spectral features accurately provided that self-interaction effects are taken into account. In the angle-resolved spectra we were able to identify the so-called vacancy band that characterizes the ordering of the vacancies. This together with the band structure results indicates the important role of the very large inter-Nb-4d hybridization for the formation of the ordered vacancies and the high thermal stability of the ordered structure of niobium monoxide.
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Submitted 20 September, 2017;
originally announced September 2017.
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Protective capping of topological surface states of intrinsically insulating Bi$_2$Te$_3$
Authors:
Katharina Höfer,
Christoph Becker,
Steffen Wirth,
Liu Hao Tjeng
Abstract:
We have identified epitaxially grown elemental Te as a capping material that is suited to protect the topological surface states of intrinsically insulating Bi$_2$Te$_3$. By using angle-resolved photoemission, we were able to show that the Te overlayer leaves the dispersive bands of the surface states intact and that it does not alter the chemical potential of the Bi$_2$Te$_3$ thin film. From in-s…
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We have identified epitaxially grown elemental Te as a capping material that is suited to protect the topological surface states of intrinsically insulating Bi$_2$Te$_3$. By using angle-resolved photoemission, we were able to show that the Te overlayer leaves the dispersive bands of the surface states intact and that it does not alter the chemical potential of the Bi$_2$Te$_3$ thin film. From in-situ four-point contact measurements, we observed that the conductivity of the capped film is still mainly determined by the metallic surface states and that the contribution of the capping layer is minor. Moreover, the Te overlayer can be annealed away in vacuum to produce a clean Bi$_2$Te$_3$ surface in its pristine state even after the exposure of the capped film to air. Our findings will facilitate well-defined and reliable ex-situ experiments on the properties of Bi$_2$Te$_3$ surface states with nontrivial topology.
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Submitted 2 September, 2015; v1 submitted 22 June, 2015;
originally announced June 2015.
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Intrinsic conduction through topological surface states of insulating Bi$_2$Te$_3$ epitaxial thin films
Authors:
Katharina Höfer,
Christoph Becker,
Diana Rata,
Jesse Swanson,
Peter Thalmeier,
Liu Hao Tjeng
Abstract:
Topological insulators represent a novel state of matter with surface charge carriers having a massless Dirac dispersion and locked helical spin polarization. Many exciting experiments have been proposed by theory, yet, their execution have been hampered by the extrinsic conductivity associated with the unavoidable presence of defects in Bi$_2$Te$_3$ and Bi$_2$Se$_3$ bulk single crystals as well a…
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Topological insulators represent a novel state of matter with surface charge carriers having a massless Dirac dispersion and locked helical spin polarization. Many exciting experiments have been proposed by theory, yet, their execution have been hampered by the extrinsic conductivity associated with the unavoidable presence of defects in Bi$_2$Te$_3$ and Bi$_2$Se$_3$ bulk single crystals as well as impurities on their surfaces. Here we present the preparation of Bi$_2$Te$_3$ thin films that are insulating in the bulk and the four-point probe measurement of the conductivity of the Dirac states on surfaces that are intrinsically clean. The total amount of charge carriers in the experiment is of order 10$^{12}$ cm$^{-2}$ only and mobilities up to 4,600 cm$^2$/Vs have been observed. These values are achieved by carrying out the preparation, structural characterization, angle-resolved and x-ray photoemission analysis, and the temperature dependent four-point probe conductivity measurement all in-situ under ultra-high-vacuum conditions. This experimental approach opens the way to prepare devices that can exploit the intrinsic topological properties of the Dirac surface states.
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Submitted 6 October, 2014;
originally announced October 2014.
