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Revealing subterahertz atomic vibrations in quantum paraelectrics by surface-sensitive spintronic terahertz spectroscopy
Authors:
Zhaodong Chu,
Junyi Yang,
Yan Li,
Kyle Hwangbo,
Jianguo Wen,
Ashley R. Bielinski,
Qi Zhang,
Alex B. F. Martinson,
Stephan Hruszkewycz,
Dillon D. Fong,
Xiaodong Xu,
Michael R. Norman,
Anand Bhattacharya,
Haidan Wen
Abstract:
Understanding surface collective dynamics in quantum materials is crucial for advancing quantum technologies. For example, surface phonon modes in quantum paraelectrics are thought to play an essential role in facilitating interfacial superconductivity. However, detecting these modes, especially below 1 terahertz (THz), is challenging due to limited sampling volumes and the need for high spectrosc…
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Understanding surface collective dynamics in quantum materials is crucial for advancing quantum technologies. For example, surface phonon modes in quantum paraelectrics are thought to play an essential role in facilitating interfacial superconductivity. However, detecting these modes, especially below 1 terahertz (THz), is challenging due to limited sampling volumes and the need for high spectroscopic resolution. Here, we report surface soft transverse optical (TO1) phonon dynamics in KTaO3 and SrTiO3 by developing surface-sensitive spintronic THz spectroscopy that can sense the collective modes only a few nanometers deep from the surface. In KTaO3, the TO1 mode softens and sharpens with decreasing temperature, leveling off at 0.7 THz. In contrast, this mode in SrTiO3 broadens significantly below the quantum paraelectric crossover and coincides with the hardening of a sub-meV phonon mode related to the antiferrodistortive transition. These observations that deviate from their bulk properties may have implications for interfacial superconductivity and ferroelectricity. The developed technique opens opportunities for sensing low-energy surface excitations.
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Submitted 3 September, 2024;
originally announced September 2024.
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Guided-Wave Sagnac Atom Interferometer with Large Area and Multiple Orbits
Authors:
M. Beydler,
E. R. Moan,
Z. Luo,
Z. Chu,
C. A. Sackett
Abstract:
We describe a matter-wave Sagnac interferometer using Bose condensed atoms confined in a time-orbiting potential trap. Compared to our previous implementation [Moan et al., Phys. Rev. Lett. 124, 120403 (2020)], our new apparatus provides better thermal stability, improved optical access, and reduced trap anharmonicity. The trapping field can be adjusted to compensate for small tilts of the apparat…
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We describe a matter-wave Sagnac interferometer using Bose condensed atoms confined in a time-orbiting potential trap. Compared to our previous implementation [Moan et al., Phys. Rev. Lett. 124, 120403 (2020)], our new apparatus provides better thermal stability, improved optical access, and reduced trap anharmonicity. The trapping field can be adjusted to compensate for small tilts of the apparatus in gravity. These features enable operation with an effective Sagnac area of 4 mm^2 per orbit, and we observe interference with 25% visibility after two orbits at a total interrogation time of 0.6 s. Long-term measurements indicate a phase stability of 0.2 rad or better.
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Submitted 4 December, 2023; v1 submitted 22 August, 2023;
originally announced August 2023.
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Superior Photo-carrier Diffusion Dynamics in Organic-inorganic Hybrid Perovskites Revealed by Spatiotemporal Conductivity Imaging
Authors:
Xuejian Ma,
Fei Zhang,
Zhaodong Chu,
Ji Hao,
Xihan Chen,
Jiamin Quan,
Zhiyuan Huang,
Xiaoming Wang,
Xiaoqin Li,
Yanfa Yan,
Kai Zhu,
Keji Lai
Abstract:
The outstanding performance of organic-inorganic metal trihalide solar cells benefits from the exceptional photo-physical properties of both electrons and holes in the material. Here, we directly probe the free-carrier dynamics in Cs-doped FAPbI3 thin films by spatiotemporal photoconductivity imaging. Using charge transport layers to selectively quench one type of carriers, we show that the two re…
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The outstanding performance of organic-inorganic metal trihalide solar cells benefits from the exceptional photo-physical properties of both electrons and holes in the material. Here, we directly probe the free-carrier dynamics in Cs-doped FAPbI3 thin films by spatiotemporal photoconductivity imaging. Using charge transport layers to selectively quench one type of carriers, we show that the two relaxation times on the order of 1 microsecond and 10 microseconds correspond to the lifetimes of electrons and holes in FACsPbI3, respectively. Strikingly, the diffusion mapping indicates that the difference in electron/hole lifetimes is largely compensated by their disparate mobility. Consequently, the long diffusion lengths (3 ~ 5 micrometers) of both carriers are comparable to each other, a feature closely related to the unique charge trapping and de-trapping processes in hybrid trihalide perovskites. Our results unveil the origin of superior diffusion dynamics in this material, crucially important for solar-cell applications.
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Submitted 4 August, 2021;
originally announced August 2021.
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Nanoscale Conductivity Imaging of Correlated Electronic States in WSe2/WS2 Moiré Superlattices
Authors:
Zhaodong Chu,
Emma C Regan,
Xuejian Ma,
Danqing Wang,
Zifan Xu,
M. Iqbal Bakti Utama,
Kentaro Yumigeta,
Mark Blei,
Kenji Watanabe,
Takashi Taniguchi,
Sefaattin Tongay,
Feng Wang,
Keji Lai
Abstract:
We report the nanoscale conductivity imaging of correlated electronic states in angle-aligned WSe2/WS2 heterostructures using microwave impedance microscopy. The noncontact microwave probe allows us to observe the Mott insulating state with one hole per moiré unit cell that persists for temperatures up to 150 K, consistent with other characterization techniques. In addition, we identify for the fi…
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We report the nanoscale conductivity imaging of correlated electronic states in angle-aligned WSe2/WS2 heterostructures using microwave impedance microscopy. The noncontact microwave probe allows us to observe the Mott insulating state with one hole per moiré unit cell that persists for temperatures up to 150 K, consistent with other characterization techniques. In addition, we identify for the first time a Mott insulating state at one electron per moiré unit cell. Appreciable inhomogeneity of the correlated states is directly visualized in the hetero-bilayer region, indicative of local disorders in the moiré superlattice potential or electrostatic doping. Our work provides important insights on 2D moiré systems down to the microscopic level.
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Submitted 13 July, 2020;
originally announced July 2020.
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Unveiling Defect-Mediated Carrier Dynamics in Monolayer Semiconductors by Spatiotemporal Microwave Imaging
Authors:
Zhaodong Chu,
Chun-Yuan Wang,
Jiamin Quan,
Chenhui Zhang,
Chao Lei,
Ali Han,
Xuejian Ma,
Hao-Ling Tang,
Dishan Abeysinghe,
Matthew Staab,
Xixiang Zhang,
Allan H. MacDonald,
Vincent Tung,
Xiaoqin Li,
Chih-Kang Shih,
Keji Lai
Abstract:
The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects can lead to an enhanced photoconduction, a complicated process involving charge generation and recombination in the time domain and carrier transport in the spat…
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The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects can lead to an enhanced photoconduction, a complicated process involving charge generation and recombination in the time domain and carrier transport in the spatial domain. Here, we report the simultaneous spatial and temporal photoconductivity imaging in two types of WS2 monolayers by laser-illuminated microwave impedance microscopy. The diffusion length and carrier lifetime were directly extracted from the spatial profile and temporal relaxation of microwave signals respectively. Time-resolved experiments indicate that the critical process for photo-excited carriers is the escape of holes from trap states, which prolongs the apparent lifetime of mobile electrons in the conduction band. As a result, counterintuitively, the photoconductivity is stronger in CVD samples than exfoliated monolayers with a lower defect density. Our work reveals the intrinsic time and length scales of electrical response to photo-excitation in van der Waals materials, which is essential for their applications in novel optoelectronic devices.
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Submitted 3 March, 2020;
originally announced March 2020.
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Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors
Authors:
Di Wu,
Wei Li,
Amritesh Rai,
Xiaoyu Wu,
Hema C. P. Movva,
Maruthi N. Yogeesh,
Zhaodong Chu,
Sanjay K. Banerjee,
Deji Akinwande,
Keji Lai
Abstract:
The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical i…
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The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical imaging on gated molybdenum disulfide (MoS2)/tungsten diselenide (WSe2) heterostructure devices, which exhibit an intriguing anti-ambipolar effect in the transfer characteristics. Interestingly, in the region with significant source-drain current, electrons in the n-type MoS2 and holes in the p-type WSe2 segments are nearly balanced, whereas the heterostructure area is depleted of mobile charges. The configuration is analogous to the p-i-n diode, where the injected carriers dominate in the recombination current. The spatial evolution of local conductance can be ascribed to the lateral band bending and formation of depletion regions along the line of MoS2-heterostructure-WSe2. Our work vividly demonstrates the microscopic origin of novel transport behaviors, which is important for the vibrant field of vdW heterojunction research.
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Submitted 21 February, 2019;
originally announced February 2019.
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Energy-resolved Photoconductivity Mapping in a Monolayer-bilayer WSe2 Lateral Heterostructure
Authors:
Zhaodong Chu,
Ali Han,
Chao Lei,
Sergei Lopatin,
Peng Li,
David Wannlund,
Di Wu,
Kevin Herrera,
Xixiang Zhang,
Allan H. MacDonald,
Xiaoqin Li,
Lain-Jong Li,
Keji Lai
Abstract:
Vertical and lateral heterostructures of van der Waals materials provide tremendous flexibility for band structure engineering. Since electronic bands are sensitively affected by defects, strain, and interlayer coupling, the edge and heterojunction of these two-dimensional (2D) systems may exhibit novel physical properties, which can be fully revealed only by spatially resolved probes. Here, we re…
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Vertical and lateral heterostructures of van der Waals materials provide tremendous flexibility for band structure engineering. Since electronic bands are sensitively affected by defects, strain, and interlayer coupling, the edge and heterojunction of these two-dimensional (2D) systems may exhibit novel physical properties, which can be fully revealed only by spatially resolved probes. Here, we report the spatial mapping of photoconductivity in a monolayer-bilayer WSe2 lateral heterostructure under multiple excitation lasers. As the photon energy increases, the light-induced conductivity detected by microwave impedance microscopy first appears along the hetero-interface and bilayer edge, then along the monolayer edge, inside the bilayer area, and finally in the interior of the monolayer region. The sequential emergence of mobile carriers in different sections of the sample is consistent with the theoretical calculation of local energy gaps. Quantitative analysis of the microscopy and transport data also reveals the linear dependence of photoconductivity on the laser intensity and the influence of interlayer coupling on carrier recombination. Combining theoretical modeling, atomic scale imaging, mesoscale impedance microscopy, and device-level characterization, our work suggests an exciting perspective to control the intrinsic band-gap variation in 2D heterostructures down to the few-nanometer regime.
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Submitted 9 October, 2018;
originally announced October 2018.
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Correlation between Dzyaloshinskii Moriya interaction and spin mixing conductance at antiferromagnet / ferromagnet interface
Authors:
Xin Ma,
Guoqiang Yu,
Seyed A. Razavi,
Liang Chang,
Lei Deng,
Zhaodong Chu,
Congli He,
Kang L. Wang,
Xiaoqin Li
Abstract:
The rich interaction phenomena at antiferromagnet (AFM)/ ferromagnet (FM) interfaces are key ingredients in AFM spintronics, where many underlying mechanisms remain unclear. Here we report a correlation observed between interfacial Dzyaloshinskii-Moriya interaction (DMI) Ds and effective spin mixing conductance g at IrMn/CoFeB interface. Both Ds and g are quantitatively determined with Brillouin l…
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The rich interaction phenomena at antiferromagnet (AFM)/ ferromagnet (FM) interfaces are key ingredients in AFM spintronics, where many underlying mechanisms remain unclear. Here we report a correlation observed between interfacial Dzyaloshinskii-Moriya interaction (DMI) Ds and effective spin mixing conductance g at IrMn/CoFeB interface. Both Ds and g are quantitatively determined with Brillouin light scattering measurements, and increase with IrMn thickness in the range of 2.5~7.5 nm. Such correlation likely originates from the AFM-states-mediated spin-flip transitions in FM, which promote both interfacial DMI and spin pumping effect. Our findings provide deeper insight into the AFM-FM interfacial coupling for future spintronic design.
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Submitted 19 July, 2018; v1 submitted 13 April, 2018;
originally announced April 2018.
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Tailoring Semiconductor Lateral Multi-junctions for Giant Photoconductivity Enhancement
Authors:
Yutsung Tsai,
Zhaodong Chu,
Yimo Han,
Chih-Piao Chuu,
Di Wu,
Alex Johnson,
Fei Cheng,
Mei-Yin Chou,
David A. Muller,
Xiaoqin Li,
Keji Lai,
Chih-Kang Shih
Abstract:
Semiconductor heterostructures have played a critical role as the enabler for new science and technology. The emergence of transition metal dichalcogenides (TMDs) as atomically thin semiconductors has opened new frontiers in semiconductor heterostructures either by stacking different TMDs to form vertical heterojunctions or by stitching them laterally to form lateral heterojunctions via direct gro…
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Semiconductor heterostructures have played a critical role as the enabler for new science and technology. The emergence of transition metal dichalcogenides (TMDs) as atomically thin semiconductors has opened new frontiers in semiconductor heterostructures either by stacking different TMDs to form vertical heterojunctions or by stitching them laterally to form lateral heterojunctions via direct growth. In conventional semiconductor heterostructures, the design of multi-junctions is critical to achieve carrier confinement. Analogously, we report successful synthesis of monolayer WS2/WS2(1-x)Se2x/WS2 multi-junction lateral heterostructure via direct growth by chemical vapor deposition. The grown structures are characterized by Raman, photoluminescence, and annular dark-field scanning transmission electron microscopy to determine its lateral compositional profile. More importantly, using microwave impedance microscopy, we demonstrate that the local photoconductivity in the alloy region can be tailored and enhanced by 2 orders of magnitude over pure WS2. Finite element analysis confirms that this effect is due to the carrier diffusion and confinement into the alloy region. Our work exemplifies the technological potential of atomically thin lateral heterostructures in optoelectronic applications.
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Submitted 15 September, 2017;
originally announced September 2017.
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Out-of-plane Piezoelectricity and Ferroelectricity in Layered $α$-In2Se3 Nano-flakes
Authors:
Yu Zhou,
Di Wu,
Yihan Zhu,
Yujin Cho,
Qing He,
Xiao Yang,
Kevin Herrera,
Zhaodong Chu,
Yu Han,
Michael C. Downer,
Hailin Peng,
Keji Lai
Abstract:
Piezoelectric and ferroelectric properties in the two dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered $α$-In2Se3 nano-flakes. The non-centrosymmetric R3m symmetry of the $α$-In2Se3 samples is confirmed by sca…
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Piezoelectric and ferroelectric properties in the two dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered $α$-In2Se3 nano-flakes. The non-centrosymmetric R3m symmetry of the $α$-In2Se3 samples is confirmed by scanning transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements. Domains with opposite polarizations are visualized by piezo-response force microscopy. Single-point poling experiments suggest that the polarization is potentially switchable for $α$-In2Se3 nano-flakes with thicknesses down to ~ 10 nm. The piezotronic effect is demonstrated in two-terminal devices, where the Schottky barrier can be modulated by the strain-induced piezopotential. Our work on polar $α$-In2Se3, one of the model 2D piezoelectrics and ferroelectrics with simple crystal structures, shows its great potential in electronic and photonic applications.
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Submitted 29 August, 2017;
originally announced August 2017.
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Interfacial Control of Dzyaloshinskii Moriya Interaction in Heavy Metal_Ferromagnetic Metal Thin Film Heterostructures
Authors:
Xin Ma,
Guoqiang Yu,
Xiang Li,
Tao Wang,
Di Wu,
Kevin S. Olsson,
Zhaodong Chu,
Kyongmo An,
John Q. Xiao,
Kang L. Wang,
Xiaoqin Li
Abstract:
The interfacial Dzyaloshinskii Moriya Interaction (DMI) in ultrathin magnetic thin film heterostructures provides a new approach for controlling spin textures on mesoscopic length scales. Here we investigate the dependence of the interfacial DMI constant D on a Pt wedge insertion layer in Ta_CoFeB_Pt(wedge)_MgO thin films by observing the asymmetric spin wave dispersion using Brillouin light scatt…
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The interfacial Dzyaloshinskii Moriya Interaction (DMI) in ultrathin magnetic thin film heterostructures provides a new approach for controlling spin textures on mesoscopic length scales. Here we investigate the dependence of the interfacial DMI constant D on a Pt wedge insertion layer in Ta_CoFeB_Pt(wedge)_MgO thin films by observing the asymmetric spin wave dispersion using Brillouin light scattering. Continuous tuning of D by more than a factor of three is realized by inserting less than one monolayer of Pt. The observations provide new insights for designing magnetic thin film heterostructures with tailored D for controlling skyrmions and magnetic domain wall chirality and dynamics.
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Submitted 4 November, 2016;
originally announced November 2016.
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Impact of Grain Boundaries on Efficiency and Stability of Organic-Inorganic Trihalide Perovskites
Authors:
Zhaodong Chu,
Mengjin Yang,
Philip Schulz,
Di Wu,
Xin Ma,
Edward Seifert,
Liuyang Sun,
Kai Zhu,
Xiaoqin Li,
Keji Lai
Abstract:
Organic-inorganic perovskite solar cells have attracted tremendous attention because of their remarkably high power conversion efficiencies (PCEs). To further improve the device performance, however, it is imperative to obtain fundamental understandings on the photo-response and long-term stability down to the microscopic level. Here, we report the first quantitative nanoscale photoconductivity im…
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Organic-inorganic perovskite solar cells have attracted tremendous attention because of their remarkably high power conversion efficiencies (PCEs). To further improve the device performance, however, it is imperative to obtain fundamental understandings on the photo-response and long-term stability down to the microscopic level. Here, we report the first quantitative nanoscale photoconductivity imaging on two methylammonium lead triiodide (MAPbI3) thin films with different PCEs by light-stimulated microwave impedance microscopy. The intrinsic photo-response is largely uniform across grains and grain boundaries, which is direct evidence on the inherently benign nature of microstructures in the perovskite thin films. In contrast, the carrier mobility and lifetime are strongly affected by bulk properties such as the sample crystallinity. As visualized by the spatial evolution of local photoconductivity, the degradation due to water diffusion through the capping layer begins with the disintegration of large grains rather than the nucleation and propagation from grain boundaries. Our findings provide new insights to improve the electro-optical properties of MAPbI3 thin films towards large-scale commercialization.
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Submitted 3 October, 2016;
originally announced October 2016.
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Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors
Authors:
Di Wu,
Xiao Li,
Lan Luan,
Xiaoyu Wu,
Wei Li,
Maruthi N. Yogeesh,
Rudresh Ghosh,
Zhaodong Chu,
Deji Akinwande,
Qian Niu,
Keji Lai
Abstract:
The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental importance for their applications in electronics and photonics. Because of the imperfections, electrons moving on these two-dimensional (2D) crystals experience a spatia…
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The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental importance for their applications in electronics and photonics. Because of the imperfections, electrons moving on these two-dimensional (2D) crystals experience a spatially non-uniform Coulomb environment, whose effect on the charge transport has not been microscopically studied. Here, we report the mesoscopic conductance mapping in monolayer and few-layer MoS2 field-effect transistors (FETs) by microwave impedance microscopy (MIM). The spatial evolution of the insulator-to-metal transition is clearly resolved. Interestingly, as the transistors are gradually turned on, electrical conduction emerges initially at the edges before appearing in the bulk of MoS2 flakes, which can be explained by our first-principles calculations. The results unambiguously confirm that the contribution of edge states to the channel conductance is significant under the threshold voltage but negligible once the bulk of the TMD device becomes conductive. Strong conductance inhomogeneity, which is associated with the fluctuations of disorder potential in the 2D sheets, is also observed in the MIM images, providing a guideline for future improvement of the device performance.
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Submitted 22 July, 2016;
originally announced July 2016.
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Quantum Superposition States of Two Valleys in Graphene
Authors:
Jia-Bin Qiao,
Zhao-Dong Chu,
Liang-Mei Wu,
Lin He
Abstract:
A system in a quantum superposition of distinct states usually exhibits many peculiar behaviors. Here we show that putting quasiparticles of graphene into superpositions of states in the two valleys can complete change the properties of the massless Dirac fermions. Due to the coexistence of both the quantum and relativistic characteristics, the superposition states exhibit many oddball behaviors i…
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A system in a quantum superposition of distinct states usually exhibits many peculiar behaviors. Here we show that putting quasiparticles of graphene into superpositions of states in the two valleys can complete change the properties of the massless Dirac fermions. Due to the coexistence of both the quantum and relativistic characteristics, the superposition states exhibit many oddball behaviors in their chiral tunneling process. We further demonstrate that a recently observed line defect in graphene could be used to generate such superposition states. A possible experimental device to detect the novel behaviors of the relativistic superposition states in graphene is proposed.
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Submitted 22 August, 2014;
originally announced August 2014.
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Crossover from Room-temperature Double-channel Ballistic Transport to Single-channel Ballistic Transport in Zigzag Graphene Nanoribbons
Authors:
Zhao-Dong Chu,
Lin He
Abstract:
Very recently, it was demonstrated explicitly that a zigzag graphene nanoribbon (GNR) exhibits a crossover of conductance from G0 to G0/2 with increasing the length (G0 = 2e2/h is the quantum of conductance) even at room-temperature [Baringhaus, et al. Nature 506, 349 (2014)]. Such a result is puzzling as none of previous theories seem to match the experimental observations. Here, we propose a mod…
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Very recently, it was demonstrated explicitly that a zigzag graphene nanoribbon (GNR) exhibits a crossover of conductance from G0 to G0/2 with increasing the length (G0 = 2e2/h is the quantum of conductance) even at room-temperature [Baringhaus, et al. Nature 506, 349 (2014)]. Such a result is puzzling as none of previous theories seem to match the experimental observations. Here, we propose a model to explain the crossover from double-channel to single-channel ballistic transport in zigzag GNR. The sp3 distortion of carbon atoms at the GNR edges induces a large spin-orbit coupling on the edges atoms, which enhances spin-flip scattering of edge states of the zigzag GNR. With sufficient spin-flip scattering, the wave-function of edge states becomes a superposition of the spin-up and spin-down components. Then the coupling of the two edges becomes important. This removes the edge degree of freedom in the zigzag GNR and results in the evolution of the conductance from G0 to G0/2 with increasing the length.
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Submitted 8 January, 2015; v1 submitted 1 August, 2014;
originally announced August 2014.
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Angle-Dependent van Hove Singularities and Their Breakdown in Twisted Graphene Bilayers
Authors:
Wei Yan,
Lan Meng,
Mengxi Liu,
Jia-Bin Qiao,
Zhao-Dong Chu,
Rui-Fen Dou,
Zhongfan Liu,
Jia-Cai Nie,
Lin He
Abstract:
The creation of van der Waals heterostructures based on a graphene monolayer and other two-dimensional crystals has attracted great interest because atomic registry of the two-dimensional crystals can modify the electronic spectra and properties of graphene. Twisted graphene bilayer can be viewed as a special van der Waals structure composed of two mutual misoriented graphene layers, where the sub…
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The creation of van der Waals heterostructures based on a graphene monolayer and other two-dimensional crystals has attracted great interest because atomic registry of the two-dimensional crystals can modify the electronic spectra and properties of graphene. Twisted graphene bilayer can be viewed as a special van der Waals structure composed of two mutual misoriented graphene layers, where the sublayer graphene not only plays the role of a substrate, but also acts as an equivalent role as the top graphene layer in the structure. Here we report the electronic spectra of slightly twisted graphene bilayers studied by scanning tunneling microscopy and spectroscopy. Our experiment demonstrates that twist-induced van Hove singularities are ubiquitously present for rotation angles theta less than about 3.5o, corresponding to moiré-pattern periods D longer than 4 nm. However, they totally vanish for theta > 5.5o (D < 2.5 nm). Such a behavior indicates that the continuum models, which capture moiré-pattern periodicity more accurately at small rotation angles, are no longer applicable at large rotation angles.
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Submitted 16 April, 2014;
originally announced April 2014.
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Tuning Structures and Electronic Spectra of Graphene Layers by Tilt Grain Boundaries
Authors:
Long-Jing Yin,
Jia-Bin Qiao,
Wen-Xiao Wang,
Zhao-Dong Chu,
Kai Fen Zhang,
Rui-Fen Dou,
Chun Lei Gao,
Jin-Feng Jia,
Jia-Cai Nie,
Lin He
Abstract:
Despite the structures and properties of tilt grain boundaries of graphite surface and graphene have been extensively studied, their effect on the structures and electronic spectra of graphene layers has not been fully addressed. Here we study effects of one-dimensional tilt grain boundaries on structures and electronic spectra of graphene multilayers by scanning tunneling microscopy and spectrosc…
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Despite the structures and properties of tilt grain boundaries of graphite surface and graphene have been extensively studied, their effect on the structures and electronic spectra of graphene layers has not been fully addressed. Here we study effects of one-dimensional tilt grain boundaries on structures and electronic spectra of graphene multilayers by scanning tunneling microscopy and spectroscopy. A tilt grain boundary of a top graphene sheet in graphene multilayers leads to a twist between consecutive layers and generates superstructures (Moiré patterns) on one side of the boundary. Our results demonstrate that the twisting changes the electronic spectra of Bernal graphene bilayer and graphene trilayers dramatically. We also study quantum-confined twisted graphene bilayer generated between two adjacent tilt grain boundaries and find that the band structure of such a system is still valid even when the number of superstructures is reduced to two in one direction. It implies that the electronic structure of this system is driven by the physics of a single Moiré spot.
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Submitted 9 April, 2014; v1 submitted 6 December, 2013;
originally announced December 2013.
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Spin Splitting Induced by a Competition between Quantum Spin Hall Edge States and Valley Edge States
Authors:
Mudan Yang,
Jia-Bin Qiao,
Zhao-Dong Chu,
Wen-Yu He,
Lin He
Abstract:
Strained graphene with lattice deformations has been demonstrated to give rise to large pseudomagnetic fields and host many exotic properties. Here, we propose a non-magnetic approach to realize a momentum-dependent out-of-plane spin splitting in strained graphene nanoribbons with a moderate spin-orbit coupling. This unique spin splitting distincts from the well-known Zeeman-type spin splitting an…
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Strained graphene with lattice deformations has been demonstrated to give rise to large pseudomagnetic fields and host many exotic properties. Here, we propose a non-magnetic approach to realize a momentum-dependent out-of-plane spin splitting in strained graphene nanoribbons with a moderate spin-orbit coupling. This unique spin splitting distincts from the well-known Zeeman-type spin splitting and the Rashba-type spin splitting. Our analysis indicates that the competition between quantum spin Hall edge states and valley edge states in the nanoribbon leads to the unique spin splitting. The quantum spin Hall states at one edge of the nanoribbon are suppressed by the counterpropagating edge modes induced by the pseudomagnetic field. At the opposite edge, the quantum spin Hall states are not affected at all. Therefore, the degenerate quantum spin Hall states of opposite spin orientation, which propagate at the two opposite edges of the nanoribbon, are lifted. This result reveals a new method to manipulate the spin degrees of freedom of electrons.
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Submitted 16 October, 2013; v1 submitted 7 October, 2013;
originally announced October 2013.
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Electronic Structure of a Two-Dimensional Graphene-Like Topological Insulator, Bi14Rh3I9
Authors:
Zhao-Dong Chu,
Wen-Yu He,
Lin He
Abstract:
Very recently, a new two-dimensional graphene-like topological insulator, Bi14Rh3I9, has been synthesized. The Bi-Rh sheets with a strong spin-orbit interaction are graphene analogues with a honeycomb net composed of RhBi8 cubes. Here we derive the low-energy effective Hamiltonian involving spin-orbit coupling for Bi14Rh3I9. In the absence of spin-orbit coupling, the Bi-Rh sheets show two inequiva…
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Very recently, a new two-dimensional graphene-like topological insulator, Bi14Rh3I9, has been synthesized. The Bi-Rh sheets with a strong spin-orbit interaction are graphene analogues with a honeycomb net composed of RhBi8 cubes. Here we derive the low-energy effective Hamiltonian involving spin-orbit coupling for Bi14Rh3I9. In the absence of spin-orbit coupling, the Bi-Rh sheets show two inequivalent Dirac cones at the corners of the hexagonal Brillouin zone. The spin-orbit interaction opens a 2400 K bandgap at the Dirac points and establishes the quantum spin Hall effect in the Bi-Rh sheets. Our result indicates that the Bi14Rh3I9 may combine many unique electronic properties of graphene and topological insulators, and it should host a combination of quantum valley and spin Hall effects.
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Submitted 4 May, 2013; v1 submitted 1 May, 2013;
originally announced May 2013.
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Chiral Tunnelling in Twisted Graphene Bilayer
Authors:
Wen-Yu He,
Zhao-Dong Chu,
Lin He
Abstract:
The perfect transmission in graphene monolayer and the perfect reflection in Bernal graphene bilayer for electrons incident in the normal direction of a potential barrier are viewed as two incarnations of the Klein paradox. Here we show a new and unique incarnation of the Klein paradox. Owing to the different chiralities of the quasiparticles involved, the chiral fermions in twisted graphene bilay…
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The perfect transmission in graphene monolayer and the perfect reflection in Bernal graphene bilayer for electrons incident in the normal direction of a potential barrier are viewed as two incarnations of the Klein paradox. Here we show a new and unique incarnation of the Klein paradox. Owing to the different chiralities of the quasiparticles involved, the chiral fermions in twisted graphene bilayer shows adjustable probability of chiral tunnelling for normal incidence: they can be changed from perfect tunnelling to partial/perfect reflection, or vice versa, by controlling either the height of the barrier or the incident energy. As well as addressing basic physics about how the chiral fermions with different chiralities tunnel through a barrier, our results provide a facile route to tune the electronic properties of the twisted graphene bilayer.
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Submitted 12 April, 2013; v1 submitted 31 January, 2013;
originally announced January 2013.
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Strain Induced One-Dimensional Landau-Level Quantization in Corrugated Graphene
Authors:
Lan Meng,
Wen-Yu He,
Hong Zheng,
Mengxi Liu,
Hui Yan,
Wei Yan,
Zhao-Dong Chu,
Keke Bai,
Rui-Fen Dou,
Yanfeng Zhang,
Zhongfan Liu,
Jia-Cai Nie,
Lin He
Abstract:
Theoretical research has predicted that ripples of graphene generates effective gauge field on its low energy electronic structure and could lead to zero-energy flat bands, which are the analog of Landau levels in real magnetic fields. Here we demonstrate, using a combination of scanning tunneling microscopy and tight-binding approximation, that the zero-energy Landau levels with vanishing Fermi v…
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Theoretical research has predicted that ripples of graphene generates effective gauge field on its low energy electronic structure and could lead to zero-energy flat bands, which are the analog of Landau levels in real magnetic fields. Here we demonstrate, using a combination of scanning tunneling microscopy and tight-binding approximation, that the zero-energy Landau levels with vanishing Fermi velocities will form when the effective pseudomagnetic flux per ripple is larger than the flux quantum. Our analysis indicates that the effective gauge field of the ripples results in zero-energy flat bands in one direction but not in another. The Fermi velocities in the perpendicular direction of the ripples are not renormalized at all. The condition to generate the ripples is also discussed according to classical thin-film elasticity theory.
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Submitted 12 April, 2013; v1 submitted 5 December, 2012;
originally announced December 2012.
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The Coexistence of van Hove Singularities and Superlattice Dirac Points in a Slightly Twisted Graphene Bilayer
Authors:
Zhao-Dong Chu,
Wen-Yu He,
Lin He
Abstract:
We consider the electronic structure of a slightly twisted graphene bilayer and show the coexistence of van Hove singularities (VHSs) and superlattice Dirac points in a continuum approximation. The graphene-on-graphene moiré pattern gives rise to a periodic electronic potential, which leads to the emergence of the superlattice Dirac points due to the chiral nature of the charge carriers. Owning to…
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We consider the electronic structure of a slightly twisted graphene bilayer and show the coexistence of van Hove singularities (VHSs) and superlattice Dirac points in a continuum approximation. The graphene-on-graphene moiré pattern gives rise to a periodic electronic potential, which leads to the emergence of the superlattice Dirac points due to the chiral nature of the charge carriers. Owning to the distinguishing real and reciprocal structures, the sublattice exchange even and odd structures of the twisted graphene bilayer (the two types of commensurate structures) result in two different structures of the superlattice Dirac points. We further calculate the effect of a strain on the low-energy electronic structure of the twisted graphene bilayer and demonstrate that the strain affects the position of the VHSs dramatically.
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Submitted 12 April, 2013; v1 submitted 15 November, 2012;
originally announced November 2012.
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Evidence for Superlattice Dirac Points and Space-dependent Fermi Velocity in Corrugated Graphene Monolayer
Authors:
Hui Yan,
Zhao-Dong Chu,
Wei Yan,
Mengxi Liu,
Lan Meng,
Mudan Yang,
Yide Fan,
Jiang Wang,
Rui-Fen Dou,
Yanfeng Zhang,
Zhongfan Liu,
Jia-Cai Nie,
Lin He
Abstract:
Recent studies show that periodic potentials can generate superlattice Dirac points at energies in graphene (is the Fermi velocity of graphene and G is the reciprocal superlattice vector). Here, we perform scanning tunneling microscopy and spectroscopy studies of a corrugated graphene monolayer on Rh foil. We show that the quasi-periodic ripples of nanometer wavelength in the corrugated graphene g…
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Recent studies show that periodic potentials can generate superlattice Dirac points at energies in graphene (is the Fermi velocity of graphene and G is the reciprocal superlattice vector). Here, we perform scanning tunneling microscopy and spectroscopy studies of a corrugated graphene monolayer on Rh foil. We show that the quasi-periodic ripples of nanometer wavelength in the corrugated graphene give rise to weak one-dimensional (1D) electronic potentials and thereby lead to the emergence of the superlattice Dirac points. The position of the superlattice Dirac point is space-dependent and shows a wide distribution of values. We demonstrated that the space-dependent superlattice Dirac points is closely related to the space-dependent Fermi velocity, which may arise from the effect of the local strain and the strong electron-electron interaction in the corrugated graphene.
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Submitted 6 November, 2012; v1 submitted 8 September, 2012;
originally announced September 2012.
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Controlling the Interlayer Coupling of Twisted Bilayer Graphene
Authors:
Lan Meng,
Wei Yan,
Zhao-Dong Chu,
Yanfeng Zhang,
Lei Feng,
Rui-Fen Dou,
Jia-Cai Nie,
Lin He
Abstract:
The interlayer coupling of twisted bilayer graphene could markedly affect its electronic band structure. A current challenge required to overcome in experiment is how to precisely control the coupling and therefore tune the electronic properties of the bilayer graphene. Here, we describe a facile method to modulate the local interlayer coupling by adsorption of single molecule magnets onto the twi…
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The interlayer coupling of twisted bilayer graphene could markedly affect its electronic band structure. A current challenge required to overcome in experiment is how to precisely control the coupling and therefore tune the electronic properties of the bilayer graphene. Here, we describe a facile method to modulate the local interlayer coupling by adsorption of single molecule magnets onto the twisted bilayer graphene and report the characterization of its electronic band structure using scanning tunneling microscopy and spectroscopy. The low-energy Van Hove singularities (VHSs) and superlattice Dirac cones, induced by the interlayer coupling and graphene-on-graphene moiré respectively, are observed in the tunneling spectra. Our experiment demonstrates that the energy difference of the two VHSs, which reflects the magnitude of interlayer coupling, can be tuned by the local coverage density of adsorption.
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Submitted 4 August, 2012;
originally announced August 2012.
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Angle Dependent Van Hove Singularities in Slightly Twisted Graphene Bilayer
Authors:
Wei Yan,
Mengxi Liu,
Rui-Fen Dou,
Lan Meng,
Lei Feng,
Zhao-Dong Chu,
Yanfeng Zhang,
Zhongfan Liu,
Jia-Cai Nie,
Lin He
Abstract:
Recent studies show that two low-energy Van Hove singularities (VHSs) seen as two pronounced peaks in the density of states (DOS) could be induced in twisted graphene bilayer. Here, we report angle dependent VHSs of slightly twisted graphene bilayer studied by scanning tunneling microscopy and spectroscopy. We show that energy difference of the two VHSs follows \DeltaEvhs ~ \hbarνF\DeltaK between…
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Recent studies show that two low-energy Van Hove singularities (VHSs) seen as two pronounced peaks in the density of states (DOS) could be induced in twisted graphene bilayer. Here, we report angle dependent VHSs of slightly twisted graphene bilayer studied by scanning tunneling microscopy and spectroscopy. We show that energy difference of the two VHSs follows \DeltaEvhs ~ \hbarνF\DeltaK between 1.0^{\circ} and 3.0^{\circ} (here νF ~ 1.1\times106 m/s is the Fermi velocity of monolayer graphene, \DeltaK = 2Ksin(θ/2) is the shift between the corresponding Dirac points of the twisted graphene bilayer). This result indicates that the rotation angle between graphene sheets not results in significant reduction of the Fermi velocity, which quite differs from that predicted by band structure calculations. However, around a twisted angle θ~ 1.3^{\circ}, the observed \DeltaEvhs ~ 0.11 eV is much less than the expected value \hbarνF\DeltaK ~ 0.28 eV at 1.3^{\circ}. The origin of the reduction of \DeltaEvhs at 1.3^{\circ} is discussed.
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Submitted 5 September, 2012; v1 submitted 26 June, 2012;
originally announced June 2012.
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Strain-induced Evolution of Electronic Band Structures in a Twisted Graphene Bilayer
Authors:
Wei Yan,
Wen-Yu He,
Zhao-Dong Chu,
Mengxi Liu,
Lan Meng,
Rui-Fen Dou,
Yanfeng Zhang,
Zhongfan Liu,
Jia-Cai Nie,
Lin He
Abstract:
Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature. The strain and curvature strongly affect the local band structures of the twisted graphene bilayer; the energy difference of the two low-energy van Hove singularities decreases with increasing the lattice deformations and the states condensed into well-defined pseudo-L…
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Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature. The strain and curvature strongly affect the local band structures of the twisted graphene bilayer; the energy difference of the two low-energy van Hove singularities decreases with increasing the lattice deformations and the states condensed into well-defined pseudo-Landau levels, which mimic the quantization of massive Dirac fermions in a magnetic field of about 100 T, along a graphene wrinkle. The joint effect of strain and out-of-plane distortion in the graphene wrinkle also results in a valley polarization with a significant gap, i.e., the eight-fold degenerate Landau level at the charge neutrality point is splitted into two four-fold degenerate quartets polarized on each layer. These results suggest that strained graphene bilayer could be an ideal platform to realize the high-temperature zero-field quantum valley Hall effect.
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Submitted 14 March, 2013; v1 submitted 26 June, 2012;
originally announced June 2012.
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Enhanced Intervalley Scattering of Twisted Bilayer Graphene by Periodic AB Stacked Atoms
Authors:
Lan Meng,
Zhao-Dong Chu,
Yanfeng Zhang,
Ji-Yong Yang,
Rui-Fen Dou,
Jia-Cai Nie,
Lin He
Abstract:
The electronic properties of twisted bilayer graphene on SiC substrate were studied via combination of transport measurements and scanning tunneling microscopy. We report the observation of enhanced intervalley scattering from one Dirac cone to the other, which contributes to weak localization, of the twisted bilayer graphene by increasing the interlayer coupling strength. Our experiment and analy…
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The electronic properties of twisted bilayer graphene on SiC substrate were studied via combination of transport measurements and scanning tunneling microscopy. We report the observation of enhanced intervalley scattering from one Dirac cone to the other, which contributes to weak localization, of the twisted bilayer graphene by increasing the interlayer coupling strength. Our experiment and analysis demonstrate that the enhanced intervalley scattering is closely related to the periodic AB stacked atoms (the A atom of layer 1 and the B atom of layer 2 that have the same horizontal positions) that break the sublattice degeneracy of graphene locally. We further show that these periodic AB stacked atoms affect intervalley but not intravalley scattering. The result reported here provides an effective way to atomically manipulate the intervalley scattering of graphene.
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Submitted 26 June, 2012; v1 submitted 15 June, 2012;
originally announced June 2012.
