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Bilayer stacking A-type altermagnet: A general approach to generating two-dimensional altermagnetism
Authors:
Sike Zeng,
Yu-Jun Zhao
Abstract:
In this article, we propose a new concept of bilayer stacking A-type altermagnet (BSAA), in which two identical ferromagnetic monolayers are stacked with antiferromagnetic coupling to form a two-dimensional A-type altermagnet. By solving the stacking model, we derive all BSAAs for all layer groups and draw three key conclusions: (1) Only 17 layer groups can realize intrinsic A-type altermagnetism.…
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In this article, we propose a new concept of bilayer stacking A-type altermagnet (BSAA), in which two identical ferromagnetic monolayers are stacked with antiferromagnetic coupling to form a two-dimensional A-type altermagnet. By solving the stacking model, we derive all BSAAs for all layer groups and draw three key conclusions: (1) Only 17 layer groups can realize intrinsic A-type altermagnetism. All 2D A-type altermagnets must belong to these 17 layer groups, which will be helpful to search for 2D A-type altermagnet. (2) It is impossible to connect the two sublattices of BSAA using $S_{3z}$ or $S_{6z}$, a constraint that is also applicable to all 2D altermagnets. (3) $C_{2α}$ is a general stacking operation to generate BSAA for an arbitrary monolayer. Our theory not only can explain the previously reported twisted-bilayer altermagnets, but also can provide more possibilities to generate A-type altermagnets. Our research has significantly broadened the range of candidate materials for 2D altermagnets. Based on conclusion (1), the bilayer NiZrCl$_6$ is predicted to exhibit intrinsic A-type altermagnetism. Additionally, we use twisted-bilayer NiCl$_2$, previously reported in the literature, as the second example of BSAA. Furthermore, utilizing symmetry analysis and first-principles calculation, we scrutinize their spin-momentum locking characteristic to substantiate their altermagnetic properties.
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Submitted 21 July, 2024;
originally announced July 2024.
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Direct Nanopatterning of Complex 3D Surfaces and Self-Aligned Superlattices via Molecular-Beam Holographic Lithography
Authors:
Shuangshuang Zeng,
Tian Tian,
Jiwoo Oh,
Chih-Jen Shih
Abstract:
Conventional lithography methods involving pattern transfer through resist templating face challenges of material compatibility with various process solvents. Other approaches of direct material writing often compromise pattern complexity and overlay accuracy. Here we explore a concept based on the moiré interference of molecular beams to directly pattern complex three-dimensional (3D) surfaces ma…
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Conventional lithography methods involving pattern transfer through resist templating face challenges of material compatibility with various process solvents. Other approaches of direct material writing often compromise pattern complexity and overlay accuracy. Here we explore a concept based on the moiré interference of molecular beams to directly pattern complex three-dimensional (3D) surfaces made by any evaporable materials, such as metals, oxides and organic semiconductors. Our proposed approach, termed the Molecular-Beam Holographic Lithography (MBHL), relies on precise control over angular projections of material flux passing through nanoapertures superimposed on the substrate, emulating the interference of coherent laser beams in interference lithography. Incorporating with our computational lithography (CL) algorithm, we have demonstrated self-aligned overlay of multiple material patterns to yield binary up to quinary superlattices, with a critical dimension and overlay accuracy on the order of 50 and 2 nanometers, respectively. The process is expected to substantially expand the boundary of materials combination for high-throughput fabrication of complex superstructures of translational symmetry on arbitrary substrates, enabling new nanoimaging, sensing, catalysis, and optoelectronic devices.
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Submitted 18 July, 2024; v1 submitted 17 July, 2024;
originally announced July 2024.
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Description of two-dimensional altermagnetism: Categorization using spin group theory
Authors:
Sike Zeng,
Yu-Jun Zhao
Abstract:
Altermagnetism, recently spotlighted in condensed matter physics, presents captivating physical properties and holds promise for spintronics applications. This study delves into the theoretical description and categorization of two-dimensional altermagnetism using spin group theory. Employing spin-group formalism, we establish seven distinct spin layer groups, extending beyond the conventional fiv…
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Altermagnetism, recently spotlighted in condensed matter physics, presents captivating physical properties and holds promise for spintronics applications. This study delves into the theoretical description and categorization of two-dimensional altermagnetism using spin group theory. Employing spin-group formalism, we establish seven distinct spin layer groups, extending beyond the conventional five spin Laue groups, to describe two-dimensional altermagnetism. Utilizing these findings, we classify previously reported two-dimensional altermagnets and identify novel materials exhibiting altermagnetism. Specifically, monolayer MnTeMoO$_6$ and VP$_2$H$_8$(NO$_4$)$_2$ are predicted to be two-dimensional altermagnets. Furthermore, we scrutinize their spin-momentum locking characteristics through symmetry analysis and density functional theory calculations, substantiating their altermagnetic properties.
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Submitted 4 August, 2024; v1 submitted 6 May, 2024;
originally announced May 2024.
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Nanomolecular OLED Pixelization Enabling Electroluminescent Metasurfaces
Authors:
Tommaso Marcato,
Jiwoo Oh,
Zhan-Hong Lin,
Sunil B. Shivarudraiah,
Sudhir Kumar,
Shuangshuang Zeng,
Chih-Jen Shih
Abstract:
Miniaturization of light-emitting diodes (LEDs) can enable high-resolution augmented and virtual reality displays and on-chip light sources for ultra-broadband chiplet communication. However, unlike silicon scaling in electronic integrated circuits, patterning of inorganic III-V semiconductors in LEDs considerably compromises device efficiencies at submicrometer scales. Here, we present the scalab…
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Miniaturization of light-emitting diodes (LEDs) can enable high-resolution augmented and virtual reality displays and on-chip light sources for ultra-broadband chiplet communication. However, unlike silicon scaling in electronic integrated circuits, patterning of inorganic III-V semiconductors in LEDs considerably compromises device efficiencies at submicrometer scales. Here, we present the scalable fabrication of nanoscale organic LEDs (nano-OLEDs), with the highest array density (>84,000 pixels per inch) and the smallest pixel size (~100 nm) ever reported to date. Direct nanomolecular patterning of organic semiconductors is realized by self-aligned evaporation through nanoapertures fabricated on a free-standing silicon nitride film adhering to the substrate. The average external quantum efficiencies (EQEs) extracted from a nano-OLED device of more than 4 megapixels reach up to 10%. At the subwavelength scale, individual pixels act as electroluminescent meta-atoms forming metasurfaces that directly convert electricity into modulated light. The diffractive coupling between nano-pixels enables control over the far-field emission properties, including directionality and polarization. The results presented here lay the foundation for bright surface light sources of dimension smaller than the Abbe diffraction limit, offering new technological platforms for super-resolution imaging, spectroscopy, sensing, and hybrid integrated photonics.
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Submitted 8 April, 2024;
originally announced April 2024.
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On the origin of topotactic reduction effect for superconductivity in infinite-layer nickelates
Authors:
Shengwei Zeng,
Chi Sin Tang,
Zhaoyang Luo,
Lin Er Chow,
Zhi Shiuh Lim,
Saurav Prakash,
Ping Yang,
Caozheng Diao,
Xiaojiang Yu,
Zhenxiang Xing,
Rong Ji,
Xinmao Yin,
Changjian Li,
X. Renshaw Wang,
Qian He,
Mark B. H. Breese,
A. Ariando,
Huajun Liu
Abstract:
Topotactic reduction utilizing metal hydrides as reagents emerges as an effective approach to achieve exceptionally low oxidization states of metal ions and unconventional coordination networks. This method opens avenues to the development of entirely new functional materials, with one notable example being the infinite-layer nickelate superconductors. However, the reduction effect on the atomic r…
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Topotactic reduction utilizing metal hydrides as reagents emerges as an effective approach to achieve exceptionally low oxidization states of metal ions and unconventional coordination networks. This method opens avenues to the development of entirely new functional materials, with one notable example being the infinite-layer nickelate superconductors. However, the reduction effect on the atomic reconstruction and electronic structures -- crucial for superconductivity -- remains largely unresolved. We design two sets of control Nd$_{0.8}$Sr$_{0.2}$NiO$_2$ thin films and implement secondary ion mass spectroscopy to highlight the absence of reduction-induced hydrogen intercalation. X-ray absorption spectroscopy shows a significant linear dichroism with dominant Ni 3d$_{x2{-}y2}$ orbitals on superconducting samples, indicating a Ni single-band nature of infinite-layer nickelates. Consistent with the superconducting $T_c$, the Ni 3d orbitals asymmetry manifests a dome-like reduction duration dependence. Our results unveil the critical role of reduction in modulating the Ni-3d orbital polarization and its impact on the superconducting properties.
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Submitted 1 March, 2024;
originally announced March 2024.
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Optical detection of small polarons in vanadium dioxide and their critical role in mediating metal-insulator transition
Authors:
Xiongfang Liu,
Tong Yang,
Jing Wu,
Mengxia Sun,
Mingyao Chen,
Chi Sin Tang,
Kun Han,
Difan Zhou,
Shengwei Zeng,
Shuo Sun,
Sensen Li,
Ming Yang,
Mark B. H. Breese,
Chuanbing Cai,
Thirumalai Venkatesan,
Andrew T. S. Wee,
Xinmao Yin
Abstract:
In the pursuit of advanced photoelectric devices, researchers have uncovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Although theoretical investigations propose that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic…
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In the pursuit of advanced photoelectric devices, researchers have uncovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Although theoretical investigations propose that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic ellipsometry measurements and first-principles calculations. We demonstrate that polaron dynamics play a complementary role in facilitating Peierls and Mott transitions to contribute to the MIT processes. Moreover, our observations and characterizations of conventional metallic and correlated plasmons in the respective phases of the VO2 film provide valuable insights into their electron structures. This study provides an understanding of the MIT mechanism in correlated systems and highlights how polarons, lattice distortions and electron correlations facilitate the phase transition processes in strongly-correlated systems, while further inspiring the development of new device functionalities.
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Submitted 28 December, 2023;
originally announced December 2023.
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Competition of electronic correlation and reconstruction in La1-xSrxTiO3/SrTiO3 heterostructures
Authors:
Xueyan Wang,
Lin Sun,
Chen Ye,
Zhen Huang,
Kun Han,
Ke Huang,
Allen Jian Yang,
Shengwei Zeng,
Xian Jun Loh,
Qiang Zhu,
T. Venkatesan,
Ariando Ariando,
X. Renshaw Wang
Abstract:
Electronic correlation and reconstruction are two important factors that play a critical role in shaping the magnetic and electronic properties of correlated low-dimensional systems. Here, we report a competition between the electronic correlation and structural reconstruction in La1-xSrxTiO3/SrTiO3 heterostructures by modulating material polarity and interfacial strain, respectively. The heterost…
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Electronic correlation and reconstruction are two important factors that play a critical role in shaping the magnetic and electronic properties of correlated low-dimensional systems. Here, we report a competition between the electronic correlation and structural reconstruction in La1-xSrxTiO3/SrTiO3 heterostructures by modulating material polarity and interfacial strain, respectively. The heterostructures exhibit a critical thickness (tc) at which a metal-to-insulator transition (MIT) abruptly occurs at certain thickness, accompanied by the coexistence of two- and three-dimensional (2D and 3D) carriers. Intriguingly, the tc exhibits a V-shaped dependence on the doping concentration of Sr, with the smallest tc value at x = 0.5. We attribute this V-shaped dependence to the competition between the electronic reconstruction (modulated by the polarity) and the electronic correlation (modulated by strain), which are borne out by the experimental results, including strain-dependent electronic properties and the evolution of 2D and 3D carriers. Our findings underscore the significance of the interplay between electronic reconstruction and correlation in the realization and utilization of emergent electronic functionalities in low-dimensional correlated systems.
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Submitted 6 October, 2023;
originally announced October 2023.
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Biocompatible wearable touch panel based on ionically conductive organic hydrogels with anti-freezing, anti-dehydration, self-healing, and underwater adhesion properties
Authors:
Zhenglin Chen,
Jiaqi Yang,
Likun Zhang,
Haifei Guana,
Zhengyang Lei,
Xiaopeng Zhang,
Canhui Yang,
Ying Zhua,
Qianhui Sun,
Lulu Xua,
Ziheng Zhanga,
Sen Zeng,
Chuhui Wang,
Rongxu Yan,
Chong Zhang,
Peter E Lobie,
Dongmei Yu,
Peiwu Qin,
Can Yang Zhang
Abstract:
Next-generation touch panels are poised to benefit from the use of stretchable and transparent soft ionic conductors, but these materials face several challenges in practical application, including structural damage, loss of functionality, and device stratification, particularly in extreme environments. To address these challenges, in this work, a biocompatible, transparent, self-adhesive gelatin-…
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Next-generation touch panels are poised to benefit from the use of stretchable and transparent soft ionic conductors, but these materials face several challenges in practical application, including structural damage, loss of functionality, and device stratification, particularly in extreme environments. To address these challenges, in this work, a biocompatible, transparent, self-adhesive gelatin-PAA-based organic hydrogel (PC-OH) was developed, the gel can adhere to the skin in both air and underwater conditions and also anti-freezing, anti-drying, fast self-healable (with a self-healing time of less than 4s in air and underwater), long-term stable for up to 7 days at a wide range of temperatures, highly stretchable, and conductive over a wide temperature range. Using this organic hydrogel, an organic hydrogel-based surface capacitive touch system has been developed that can detect finger touch position in wet environments and over a wide temperature range, demonstrating its ability to sense finger touch position. The wearable touch panel has been successfully demonstrated through the ability to write text, draw figures, and play electronic games, showcasing its potential use in various applications. This breakthrough has significant implications for the development of next-generation touch panels, particularly in the healthcare, sports, and entertainment industries, where reliable and versatile human-machine interfaces are essential.
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Submitted 7 September, 2023; v1 submitted 27 August, 2023;
originally announced August 2023.
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Unconventional quantum oscillations and evidence of non-trivial electronic states in quasi-two-dimensional electron system at complex oxide interfaces
Authors:
Km Rubi,
Denis R. Candido,
Manish Dumen,
Shengwei Zeng,
Andrew Ammerlaan,
Femke Bangma,
Mun K. Chan,
Michel Goiran,
Ariando Ariando,
Suvankar Chakraverty,
Walter Escoffier,
Uli Zeitler,
Neil Harrison
Abstract:
The simultaneous occurrence of electric-field controlled superconductivity and spin-orbit interaction makes two-dimensional electron systems (2DES) constructed from perovskite transition metal oxides promising candidates for the next generation of spintronics and quantum computing. It is, however, essential to understand the electronic bands thoroughly and verify the predicted electronic states ex…
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The simultaneous occurrence of electric-field controlled superconductivity and spin-orbit interaction makes two-dimensional electron systems (2DES) constructed from perovskite transition metal oxides promising candidates for the next generation of spintronics and quantum computing. It is, however, essential to understand the electronic bands thoroughly and verify the predicted electronic states experimentally in these 2DES to advance technological applications. Here, we present novel insights into the electronic states of the 2DES at oxide interfaces through comprehensive investigations of Shubnikov-de Haas oscillations in two different systems: EuO/KTaO$_3$ (EuO/KTO) and LaAlO$_3$/SrTiO$_3$ (LAO/STO). To accurately resolve these oscillations, we conducted transport measurements in high magnetic fields up to 60 T and low temperatures down to 100 mK. For 2D confined electrons at both interfaces, we observed a progressive increase of oscillations frequency and cyclotron mass with the magnetic field. We interpret these intriguing findings by considering the existence of non-trivial electronic bands, for which the $E-k$ dispersion incorporates both linear and parabolic dispersion relations. In addition to providing experimental evidence for topological-like electronic states in KTO-2DES and STO-2DES, the unconventional oscillations presented in this study establish a new paradigm for quantum oscillations in 2DES based on perovskite transition metal oxides, where the oscillations frequency exhibits quadratic dependence on the magnetic field.
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Submitted 1 May, 2024; v1 submitted 10 July, 2023;
originally announced July 2023.
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Coexistence of surface oxygen vacancy and interface conducting states in LaAlO3/SrTiO3 revealed by low-angle resonant soft X-ray scattering
Authors:
Ming Yang,
Ariando Ariando,
Caozheng Diao,
James C Lee,
Kaushik Jayaraman,
Mansoor B A Jalil,
Serban Smadici,
Shengwei Zeng,
Jun Zhou,
Weilong Kong,
Mark B. H. Breese,
Sankar Dhar,
Yuan Ping Feng,
Peter Abbamonte,
Thirumalai Venkatesan,
Andrivo Rusydi
Abstract:
Oxide heterostructures have shown rich physics phenomena, particularly in the conjunction of exotic insulator-metal transition (IMT) at the interface between polar insulator LaAlO3 and non-polar insulator SrTiO3 (LaAlO3/SrTiO3). Polarization catastrophe model has suggested an electronic reconstruction yielding to metallicity at both the interface and surface. Another scenario is the occurrence of…
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Oxide heterostructures have shown rich physics phenomena, particularly in the conjunction of exotic insulator-metal transition (IMT) at the interface between polar insulator LaAlO3 and non-polar insulator SrTiO3 (LaAlO3/SrTiO3). Polarization catastrophe model has suggested an electronic reconstruction yielding to metallicity at both the interface and surface. Another scenario is the occurrence of surface oxygen vacancy at LaAlO3 (surface-Ov), which has predicted surface-to-interface charge transfer yielding metallic interface but insulating surface. To clarify the origin of IMT, one should probe surface-Ov and the associated electronic structures at both the surface and the buried interface simultaneously. Here, using low-angle resonant soft X-ray scattering (LA-RSXS) supported with first-principles calculations, we reveal the co-existence of the surface-Ov state and the interface conducting state only in conducting LaAlO3/SrTiO3 (001) films. Interestingly, both the surface-Ov state and the interface conducting state are absent for the insulating film. As a function of Ov density, while the surface-Ov state is responsible for the IMT, the spatial charge distribution is found responsible for a transition from two-dimensional-like to three-dimensional-like conducting accompanied by spectral weight transfer, revealing the importance of electronic correlation. Our results show the importance of surface-Ov in determining interface properties and provides a new strategy in utilizing LA-RSXS to directly probe the surface and buried interface electronic properties in complex oxide heterostructures.
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Submitted 8 June, 2023;
originally announced June 2023.
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Self-passivated freestanding superconducting oxide film for flexible electronics
Authors:
Zhuoyue Jia,
Chi Sin Tang,
Jing Wu,
Changjian Li,
Wanting Xu,
Kairong Wu,
Difan Zhou,
Ping Yang,
Shengwei Zeng,
Zhigang Zeng,
Dengsong Zhang,
Ariando Ariando,
Mark B. H. Breese,
Chuanbing Cai,
Xinmao Yin
Abstract:
The integration of high-temperature superconducting YBa2Cu3O6+x (YBCO) into flexible electronic devices has the potential to revolutionize the technology industry. The effective preparation of high-quality flexible YBCO films therefore plays a key role in this development. We present a novel approach for transferring water-sensitive YBCO films onto flexible substrates without any buffer layer. Fre…
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The integration of high-temperature superconducting YBa2Cu3O6+x (YBCO) into flexible electronic devices has the potential to revolutionize the technology industry. The effective preparation of high-quality flexible YBCO films therefore plays a key role in this development. We present a novel approach for transferring water-sensitive YBCO films onto flexible substrates without any buffer layer. Freestanding YBCO film on a polydimethylsiloxane substrate is extracted by etching the Sr3Al2O6 sacrificial layer from the LaAlO3 substrate. In addition to the obtained freestanding YBCO thin film having a Tc of 89.1 K, the freestanding YBCO thin films under inward and outward bending conditions have Tc of 89.6 K and 88.9 K, respectively. A comprehensive characterization involving multiple experimental techniques including high-resolution transmission electron microscopy, scanning electron microscopy, Raman and X-ray Absorption Spectroscopy is conducted to investigate the morphology, structural and electronic properties of the YBCO film before and after the extraction process where it shows the preservation of the structural and superconductive properties of the freestanding YBCO virtually in its pristine state. Further investigation reveals the formation of a YBCO passivated layer serves as a protective layer which effectively preserves the inner section of the freestanding YBCO during the etching process. This work plays a key role in actualizing the fabrication of flexible oxide thin films and opens up new possibilities for a diverse range of device applications involving thin-films and low-dimensional materials.
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Submitted 6 July, 2023; v1 submitted 8 May, 2023;
originally announced May 2023.
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Tunable Magnetic Properties in Sr$_2$FeReO$_6$ Double-Perovskite
Authors:
Z. T. Zhang,
H. Yan,
Z. Huang,
X. Chi,
C. J. Li,
Z. S. Lim,
S. W. Zeng,
K. Han,
G. J. Omar,
K. X. Jin,
A. Ariando
Abstract:
Double-perovskite oxides have attracted recent attention due to their attractive functionalities and application potential. In this paper, we demonstrate the effect of dual controls, i.e., the deposition pressure of oxygen (P$_O2$) and lattice mismatch ($ε$), on tuning magnetic properties in epitaxial double-perovskite Sr$_2$FeReO$_6$ films. In a nearly-lattice-matched Sr$_2$FeReO$_6$/SrTiO$_3$ fi…
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Double-perovskite oxides have attracted recent attention due to their attractive functionalities and application potential. In this paper, we demonstrate the effect of dual controls, i.e., the deposition pressure of oxygen (P$_O2$) and lattice mismatch ($ε$), on tuning magnetic properties in epitaxial double-perovskite Sr$_2$FeReO$_6$ films. In a nearly-lattice-matched Sr$_2$FeReO$_6$/SrTiO$_3$ film, the ferrimagnetic-to-paramagnetic phase transition occurs when P$_O2$ is reduced to 30 mTorr, probably due to the formation of Re$^{4+}$ ions that replace the stoichiometric Re$^{5+}$ to cause disorders of $B$-site ions. On the other hand, a large compressive strain or tensile strain shifts this critical P$_O2$ to below 1 mTorr or above 40 mTorr, respectively. The observations could be attributed to the modulation of $B$-site ordering by epitaxial strain through affecting elemental valence. Our results provide a feasible way to expand the functional tunability of magnetic double-perovskite oxides that hold great promise for spintronic devices.
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Submitted 26 April, 2023;
originally announced April 2023.
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Polarization State Conversion through Chiral Butterfly Meta-Structure
Authors:
Hicham Mangach,
Younes Achaoui,
Muamer Kadic,
Abdenbi Bouzid,
Sébastien Guenneau,
Shuwen Zeng
Abstract:
The recent emergence of chirality in mechanical metamaterials has revolutionized the field, enabling achievements in wave propagation and polarization control. Despite being an intrinsic feature of some molecules and ubiquitous in our surroundings, the incorporation of chirality into mechanical systems has only gained widespread recognition in the last few years. The extra degrees of freedom induc…
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The recent emergence of chirality in mechanical metamaterials has revolutionized the field, enabling achievements in wave propagation and polarization control. Despite being an intrinsic feature of some molecules and ubiquitous in our surroundings, the incorporation of chirality into mechanical systems has only gained widespread recognition in the last few years. The extra degrees of freedom induced by chirality has propelled the study of systems to new heights, leading to a better understanding of the physical laws governing these systems. In this study, we present a structural design of a butterfly meta-structure that exploits the chiral effect to create a 3D chiral butterfly capable of inducing a rotation of 90° in the plane of polarization, enabling a switch between various polarization states within a solid material. Furthermore, our numerical investigation using Finite Element Analysis (FEA) has revealed an unexpected conversion of compressional movement to transverse movement within these structures, further highlighting the transformative potential of chirality in mechanical metamaterials. Thus, revealing an additional degree of freedom that can be manipulated, namely the polarization state.
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Submitted 9 April, 2023;
originally announced April 2023.
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Spin State Disproportionation in Insulating Ferromagnetic LaCoO3 Epitaxial Thin Films
Authors:
Shanquan Chen,
Jhong-Yi Chang,
Qinghua Zhang,
Qiuyue Li,
Ting Lin,
Fanqi Meng,
Haoliang Huang,
Shengwei Zeng,
Xinmao Yin,
My Ngoc Duong,
Yalin Lu,
Lang Chen,
Er-Jia Guo,
Hanghui Chen,
Chun-Fu Chang,
Chang-Yang Kuo,
Zuhuang Chen
Abstract:
The origin of insulating ferromagnetism in epitaxial LaCoO3 films under tensile strain remains elusive despite extensive research efforts have been devoted. Surprisingly, the spin state of its Co ions, the main parameter of its ferromagnetism, is still to be determined. Here, we have systematically investigated the spin state in epitaxial LaCoO3 thin films to clarify the mechanism of strain induce…
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The origin of insulating ferromagnetism in epitaxial LaCoO3 films under tensile strain remains elusive despite extensive research efforts have been devoted. Surprisingly, the spin state of its Co ions, the main parameter of its ferromagnetism, is still to be determined. Here, we have systematically investigated the spin state in epitaxial LaCoO3 thin films to clarify the mechanism of strain induced ferromagnetism using element-specific x-ray absorption spectroscopy and dichroism. Combining with the configuration interaction cluster calculations, we unambiguously demonstrate that Co3+ in LaCoO3 films under compressive strain (on LaAlO3 substrate) are practically a low spin state, whereas Co3+ in LaCoO3 films under tensile strain (on SrTiO3 substrate) have mixed high spin and low spin states with a ratio close to 1:3. From the identification of this spin state ratio, we infer that the dark strips observed by high-resolution scanning transmission electron microscopy indicate the position of Co3+ high spin state, i.e., an observation of a spin state disproportionation in tensile-strained LaCoO3 films. This consequently explains the nature of ferromagnetism in LaCoO3 films.
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Submitted 12 February, 2023;
originally announced February 2023.
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Dimensionality control and rotational symmetry breaking superconductivity in square-planar layered nickelates
Authors:
Lin Er Chow,
Km Rubi,
King Yau Yip,
Mathieu Pierre,
Maxime Leroux,
Xinyou Liu,
Zhaoyang Luo,
Shengwei Zeng,
Changjian Li,
Michel Goiran,
Neil Harrison,
Walter Escoffier,
Swee Kuan Goh,
A. Ariando
Abstract:
The interplay between dimensionality and various phases of matter is a central inquiry in condensed matter physics. New phases are often discovered through spontaneously broken symmetry. Understanding the dimensionality of superconductivity in the high-temperature cuprate analogue $-$ layered nickelates and revealing a new symmetry-breaking state are the keys to deciphering the underlying pairing…
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The interplay between dimensionality and various phases of matter is a central inquiry in condensed matter physics. New phases are often discovered through spontaneously broken symmetry. Understanding the dimensionality of superconductivity in the high-temperature cuprate analogue $-$ layered nickelates and revealing a new symmetry-breaking state are the keys to deciphering the underlying pairing mechanism. Here, we demonstrate the highly-tunable dimensionality and a broken rotational symmetry state in the superconductivity of square-planar layered nickelates. The superconducting state, probed by superconducting critical current and magnetoresistance within superconducting transition under direction-dependent in-plane magnetic fields, exhibits a $C_2$ rotational symmetry which breaks the $C_4$ rotational symmetry of the square-planar lattice. Furthermore, by performing detailed examination of the angular dependent upper critical fields at temperatures down to 0.5 K with high-magnetic pulsed-fields, we observe a crossover from two-dimensional to three-dimensional superconducting states which can be manipulated by the ionic size fluctuations in the rare-earth spacer layer. Such a large degree of controllability is desired for tailoring strongly two/three-dimensional superconductors and navigating various pairing landscapes for a better understanding of the correlation between reduced dimensionality and unconventional pairing. These results illuminate new directions to unravel the high-temperature superconducting pairing mechanism.
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Submitted 18 January, 2023;
originally announced January 2023.
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Theory of Critical Phenomena with Long-Range Temporal Interaction
Authors:
Shaolong Zeng,
Fan Zhong
Abstract:
We develop a systematic theory for the critical phenomena with memory in all spatial dimensions, including $d<d_c$, $d=d_c$, and $d>d_c$, the upper critical dimension. We show that the Hamiltonian plays a unique role in dynamics and the dimensional constant $\mathfrak{d}_t$ that embodies the intimate relationship between space and time is the fundamental ingredient of the theory. However, its valu…
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We develop a systematic theory for the critical phenomena with memory in all spatial dimensions, including $d<d_c$, $d=d_c$, and $d>d_c$, the upper critical dimension. We show that the Hamiltonian plays a unique role in dynamics and the dimensional constant $\mathfrak{d}_t$ that embodies the intimate relationship between space and time is the fundamental ingredient of the theory. However, its value varies with the space dimension continuously and vanishes exactly at $d=4$, reflecting reasonably the variation of the amount of the temporal dimension that is transferred to the spatial one with the strength of fluctuations. Such variations of the temporal dimension save all scaling laws though the fluctuation-dissipation theorem is violated. Various new universality classes emerge.
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Submitted 8 May, 2023; v1 submitted 21 December, 2022;
originally announced December 2022.
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Direct observation of two-dimensional small polarons at correlated oxide interface
Authors:
Chi Sin Tang,
Shengwei Zeng,
Jing Wu,
Shunfeng Chen,
Dongsheng Song,
Milošević,
Ping Yang,
Caozheng Diao,
Jun Zhou,
Stephen J. Pennycook,
Mark B. H. Breese,
Chuanbing Cai,
Thirumalai Venkatesan,
Ariando Ariando,
Ming Yang,
Andrew T. S. Wee,
Xinmao Yin
Abstract:
Two-dimensional (2D) perovskite oxide interfaces are ideal systems where diverse emergent properties can be uncovered.The formation and modification of polaronic properties due to short-range strong charge-lattice interactions of 2D interfaces remains hugely intriguing.Here, we report the direct observation of small-polarons at the LaAlO3/SrTiO3 (LAO/STO) conducting interface using high-resolution…
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Two-dimensional (2D) perovskite oxide interfaces are ideal systems where diverse emergent properties can be uncovered.The formation and modification of polaronic properties due to short-range strong charge-lattice interactions of 2D interfaces remains hugely intriguing.Here, we report the direct observation of small-polarons at the LaAlO3/SrTiO3 (LAO/STO) conducting interface using high-resolution spectroscopic ellipsometry.First-principles investigations further reveals that strong coupling between the interfacial electrons and the Ti-lattice result in the formation of localized 2D small polarons.These findings resolve the longstanding issue where the excess experimentally measured interfacial carrier density is significantly lower than theoretically predicted values.The charge-phonon induced lattice distortion further provides an analogue to the superconductive states in magic-angle twisted bilayer graphene attributed to the many-body correlations induced by broken periodic lattice symmetry.Our study sheds light on the multifaceted complexity of broken periodic lattice induced quasi-particle effects and its relationship with superconductivity.
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Submitted 6 July, 2023; v1 submitted 25 October, 2022;
originally announced October 2022.
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Two-Dimensional Charge Localization at the Perovskite Oxide Interface
Authors:
Chi Sin Tang,
Shengwei Zeng,
Caozheng Diao,
Jing Wu,
Shunfeng Chen,
Mark B. H. Breese,
Chuanbing Cai,
Ariando Ariando,
Andrew T. S. Wee,
Xinmao Yin
Abstract:
The effects of atomic-scale disorder and charge (de)localization holds significant importance,and they provide essential insights in unravelling the role that strong and weak correlations play in condensed matter systems.For perovskite oxide heterostructures,while disorders introduced via various external stimuli have strong influences on the (de)localization of the interfacial two-dimensional (2D…
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The effects of atomic-scale disorder and charge (de)localization holds significant importance,and they provide essential insights in unravelling the role that strong and weak correlations play in condensed matter systems.For perovskite oxide heterostructures,while disorders introduced via various external stimuli have strong influences on the (de)localization of the interfacial two-dimensional (2D) electrons, these factors alone could not fully account for the system's charge dynamics where interfacial hybridization holds very strong influence.Here, we determine that the displaced 2D free electrons are localized in the specific hybridized states at the LaAlO3/SrTiO3(LAO/STO) interface.This experimental study combines both transport measurements and temperature-dependent X-ray absorption spectroscopy and suggests the localization of 2D electrons can be induced via temperature reduction or ionic liquid gating and it applies to both amorphous and crystalline interfacial systems.Specifically, we demonstrate that interfacial hybridization plays a pivotal role in regulating the 2D electron localization effects.Our study resolves the location where the 2D electrons are localized and highlights the importance of interfacial hybridization and opens further scientific investigation of its influence on 2D charge localization in oxide heterointerfaces.
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Submitted 25 October, 2022;
originally announced October 2022.
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Ionic modulation at the LaAlO$_3$/KTaO$_3$ interface for extreme high-mobility two-dimensional electron gas
Authors:
H. Yan,
S. W. Zeng,
K. Rubi,
G. J. Omar,
Z. T. Zhang,
M. Goiran,
W. Escoffier,
A. Ariando
Abstract:
Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin-orbit coupling, 5d transition metal oxides based two-dimensional electron systems (2DESs) have been prospected as one of the potential intrants for modern electronics. However, despite the lighter electron mass, the mobility of carriers, a key requisite for high-performance devices, in 5d-oxid…
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Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin-orbit coupling, 5d transition metal oxides based two-dimensional electron systems (2DESs) have been prospected as one of the potential intrants for modern electronics. However, despite the lighter electron mass, the mobility of carriers, a key requisite for high-performance devices, in 5d-oxides devices remains far behind their 3d-oxides analogs. The carriers mobility in these oxides is significantly hampered by the inevitable presence of defects generated during the growth process. Here, we report very high mobility ($\sim$ 22650 cm$^2$V$^{-1}$s$^{-1}$) of 5d-2DES confined at the LaAlO$_3$/KTaO$_3$ interface. The high mobility, which is beyond the values observed in LaAlO$_3$/SrTiO$_3$ and $γ$-Al$_2$O$_3$/SrTiO$_3$ systems in the same carrier-density range, is achieved using the ionic-liquid gating at room temperature. We postulate that the ionic-liquid gating affects the oxygen vacancies and efficiently reduces any disorder at the interface. Investigating density and mobility in a broad range of back-gate voltage, we reveal that the mobility follows the power-law $μ\propto n^{1.2}$, indicating the very high quality of ionic-liquid-gated LaAlO$_3$/KTaO$_3$ devices, consistent with our postulate. Further, the analysis of the quantum oscillations measured in high magnetic fields confirms that the high-mobility electrons occupy the electronic sub-bands emerging from the Ta:5d orbitals of KTaO$_3$.
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Submitted 25 September, 2022;
originally announced September 2022.
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Pauli-limit violation in lanthanide infinite-layer nickelate superconductors
Authors:
L. E. Chow,
K. Y. Yip,
M. Pierre,
S. W. Zeng,
Z. T. Zhang,
T. Heil,
J. Deuschle,
P. Nandi,
S. K. Sudheesh,
Z. S. Lim,
Z. Y. Luo,
M. Nardone,
A. Zitouni,
P. A. van Aken,
M. Goiran,
S. K. Goh,
W. Escoffier,
A. Ariando
Abstract:
Superconductivity can be destroyed by a magnetic field with an upper bound known as the Pauli-limit in spin-singlet superconductors. Almost all the discovered superconductors are spin-singlet, with the highest transition temperature $T_c$ at ambient pressure achieved in the cuprate family. The closest cuprate analogue is the recently discovered infinite-layer nickelate, which hosts substantial str…
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Superconductivity can be destroyed by a magnetic field with an upper bound known as the Pauli-limit in spin-singlet superconductors. Almost all the discovered superconductors are spin-singlet, with the highest transition temperature $T_c$ at ambient pressure achieved in the cuprate family. The closest cuprate analogue is the recently discovered infinite-layer nickelate, which hosts substantial structural and electronic similarity to the cuprate. A previous magnetotransport study on Nd$_{0.775}$Sr$_{0.225}$NiO$_2$ has observed an isotropic Pauli-limited upper critical field. Here, we report a large violation (>2 times) of Pauli-limit in every crystallographic directions in La$_{1-x}$(Ca/Sr)$_x$NiO$_2$ regardless of the doping $x$. Such a large violation of the Pauli-limit in all directions in La$_{1-x}$(Ca/Sr)$_x$NiO$_2$ is unexpected and unlikely accounted by a Fulde Ferrell-Larkin-Ovchinnikov (FFLO)-state, strong spin-orbit-coupling, strong-coupling or a large pseudogap. On the other hand, in agreement with the previous report, we observe a Pauli-limiting critical field in Nd$_{1-x}$Sr$_x$NiO$_2$ and the superconducting anisotropy decreases as doping increases, suggesting a spin-singlet pairing. Therefore, superconductivity in La$_{1-x}$(Ca/Sr)$_x$NiO$_2$ could be driven by a non-spin-singlet Cooper pairing mechanism with an attractive high-$T_c$ at 10 K, an order of magnitude higher than the known spin triplet superconductors, favourably extending the application of spin-triplet superconductivity in topological matter, non-dissipative spintronics, and quantum computing.
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Submitted 26 April, 2022;
originally announced April 2022.
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Optical Properties of Superconducting Nd0.8Sr0.2NiO2 Nickelate
Authors:
Rebecca Cervasio,
Luca Tomarchio,
Marine Verseils,
Jean-Blaise Brubach,
Salvatore Macis,
Shengwei Zeng,
Ariando Ariando,
Pascale Roy,
Stefano Lupi
Abstract:
The intensive search for alternative non-cuprate high-transition-temperature ($T_c$) superconductors has taken a positive turn recently with the discovery of superconductivity in infinite layer nickelates. This discovery is expected to be the basis for disentangling the puzzle behind the physics of high $T_c$ in oxides. In the unsolved quest for the physical conditions necessary for inducing super…
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The intensive search for alternative non-cuprate high-transition-temperature ($T_c$) superconductors has taken a positive turn recently with the discovery of superconductivity in infinite layer nickelates. This discovery is expected to be the basis for disentangling the puzzle behind the physics of high $T_c$ in oxides. In the unsolved quest for the physical conditions necessary for inducing superconductivity, we report an optical study of a Nd$_{0.8}$Sr$_{0.2}$NiO$_2$ film measured using optical spectroscopy, at temperatures above and below the critical temperature $T_c\sim 13$ K. The normal-state electrodynamics of Nd$_{0.8}$Sr$_{0.2}$NiO$_2$, is described by the Drude model characterized by a scattering time just above $T_c$ ($τ\sim 1.7\times 10^{-14}$ s) and a plasma frequency $ω_p = 8500$ cm$^{-1}$ in combination with an absorption band in the Mid-Infrared (MIR) around $ω_0 \sim 4000$ cm$^{-1}$. The MIR absorption indicates the presence of strong electronic correlation effect in the NiO$_2$ plane similarly to cuprates. Below $T_c$, a superconducting energy gap ($2Δ$) of $\sim 3.2$ meV is extracted from the Terahertz reflectivity using the the Mattis-Bardeen model. From the Ferrel-Glover-Thinkam Rule applied to the real part of the optical conductivity, we also estimate a London penetration depth of about 490 nm, in agreement with a type-II superconductivity in Nd$_{0.8}$Sr$_{0.2}$NiO$_2$ Nickelate.
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Submitted 15 September, 2023; v1 submitted 31 March, 2022;
originally announced March 2022.
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Effective-Dimension Theory of Critical Phenomena above Upper Critical Dimensions
Authors:
Shaolong Zeng,
Sue Ping Szeto,
Fan Zhong
Abstract:
Phase transitions and critical phenomena are among the most intriguing phenomena in nature and their renormalization-group theory is one of the greatest achievements of theoretical physics. However, the predictions of the theory above an upper critical dimension $d_c$ seriously disagree with reality. In addition to its fundamental significance, the problem is also of practical importance because b…
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Phase transitions and critical phenomena are among the most intriguing phenomena in nature and their renormalization-group theory is one of the greatest achievements of theoretical physics. However, the predictions of the theory above an upper critical dimension $d_c$ seriously disagree with reality. In addition to its fundamental significance, the problem is also of practical importance because both complex systems with spatial or temporal long-range interactions and quantum phase transitions can substantially lower $d_c$. The extant scenarios built on a dangerous irrelevant variable (DIV) to resolve the problem introduce two sets of critical exponents and even two sets of scaling laws whose origin is obscure. Here, we consider the DIV from a different perspective and clearly unveil the origin of the two sets of exponents and hence the intrinsic inconsistency in those scenarios. We then develop an effective-dimension theory in which critical fluctuations and system volume are fixed at an effective dimension by the DIV. This enables us to account for all the extant results consistently. A novel asymptotic finite-size scaling behavior for a correlation function together with a new anomalous dimension and its associated scaling law is also derived.
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Submitted 30 March, 2022;
originally announced March 2022.
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Theory of Critical Phenomena with Memory
Authors:
Shaolong Zeng,
Sue ping Szeto,
Fan Zhong
Abstract:
Memory is a ubiquitous characteristic of complex systems and critical phenomena are one of the most intriguing phenomena in nature. Here, we propose an Ising model with memory and develop a corresponding theory of critical phenomena with memory for complex systems and discovered a series of surprising novel results. We show that a naive theory of a usual Hamiltonian with a direct inclusion of a po…
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Memory is a ubiquitous characteristic of complex systems and critical phenomena are one of the most intriguing phenomena in nature. Here, we propose an Ising model with memory and develop a corresponding theory of critical phenomena with memory for complex systems and discovered a series of surprising novel results. We show that a naive theory of a usual Hamiltonian with a direct inclusion of a power-law decaying long-range temporal interaction violates radically a hyperscaling law for all spatial dimensions even at and below the upper critical dimension. This entails both indispensable consideration of the Hamiltonian for dynamics, rather than the usual practice of just focusing on the corresponding dynamic Lagrangian alone, and transformations that result in a correct theory in which space and time are inextricably interwoven, leading to an effective spatial dimension that repairs the hyperscaling law. The theory gives rise to a set of novel mean-field critical exponents, which are different from the usual Landau ones, as well as new universality classes. These exponents are verified by numerical simulations of the Ising model with memory in two and three spatial dimensions.
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Submitted 12 August, 2022; v1 submitted 30 March, 2022;
originally announced March 2022.
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Unexpectedly Spontaneous Water Dissociation on Graphene Oxide Supported by Copper Substrate
Authors:
Zhijing Huang,
Zihan Yan,
Guangdong Zhu,
Xing Chen,
Shuming Zeng,
Xiuyun Zhang,
Liang Zhao,
Yusong Tu
Abstract:
Water dissociation is of fundamental importance in scientific fields and has drawn considerable interest in diverse technological applications. However, the high activation barrier of breaking the O-H bond within the water molecule has been identified as the bottleneck, even for the water adsorbed on the graphene oxide (GO). Herein, using the density functional theory calculations, we demonstrate…
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Water dissociation is of fundamental importance in scientific fields and has drawn considerable interest in diverse technological applications. However, the high activation barrier of breaking the O-H bond within the water molecule has been identified as the bottleneck, even for the water adsorbed on the graphene oxide (GO). Herein, using the density functional theory calculations, we demonstrate that the water molecule can be spontaneously dissociated on GO supported by the (111) surface of the copper substrate (Copper-GO). This process involves a proton transferring from water to the interfacial oxygen group, and a hydroxide covalently bonding to GO. Compared to that on GO, the water dissociation barrier on Copper-GO is significantly decreased to be less than or comparable to thermal fluctuations. This is ascribed to the orbital-hybridizing interaction between copper substrate and GO, which enhances the reaction activity of interfacial oxygen groups along the basal plane of GO for water dissociation. Our work provides a novel strategy to access water dissociation via the substrate-enhanced reaction activity of interfacial oxygen groups on GO and indicates that the substrate can serve as an essential key to tuning the catalytic performance of various two-dimensional material devices.
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Submitted 14 March, 2023; v1 submitted 6 February, 2022;
originally announced February 2022.
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Pairing symmetry in infinite-layer nickelate superconductor
Authors:
L. E. Chow,
S. Kunniniyil Sudheesh,
Z. Y. Luo,
P. Nandi,
T. Heil,
J. Deuschle,
S. W. Zeng,
Z. T. Zhang,
S. Prakash,
X. M. Du,
Z. S. Lim,
Peter A. van Aken,
Elbert E. M. Chia,
A. Ariando
Abstract:
The superconducting infinite-layer nickelate family has risen as a promising platform for revealing the mechanism of high-temperature superconductivity. However, its challenging material synthesis has obscured effort in understanding the nature of its ground state and low-lying excitations, which is a prerequisite for identifying the origin of the Cooper pairing in high-temperature superconductors…
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The superconducting infinite-layer nickelate family has risen as a promising platform for revealing the mechanism of high-temperature superconductivity. However, its challenging material synthesis has obscured effort in understanding the nature of its ground state and low-lying excitations, which is a prerequisite for identifying the origin of the Cooper pairing in high-temperature superconductors. In particular, the superconducting gap symmetry of nickelates has hardly been investigated and remains controversial. Here, we report the pairing symmetry of the infinite-layer nickelates determined by London penetration depth measurements in neodymium-based (Nd,Sr)NiO$_2$ and lanthanide-based (La,Ca)NiO$_2$ thin films of high crystallinity. A rare-earth-specific order parameter is observed. While the lanthanide nickelates follow dirty line-node behaviour, the neodymium-counterpart exhibits nodeless order parameters such as the $(d+is)$ wave. In contrast to the cuprates, our results suggest that the superconducting order parameter in nickelates is beyond a single $d_(x^2-y^2 )$-wave gap. Furthermore, the superfluid density shows a long tail near the superconducting transition temperature which is consistent with the emergence of a two-dimensional to three-dimensional crossover in the superconducting state. These observations challenge the early theoretical framework and propel further experimental and theoretical interests in the pairing nature of the infinite-layer nickelate family.
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Submitted 8 April, 2023; v1 submitted 24 January, 2022;
originally announced January 2022.
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Charge and spin order dichotomy in NdNiO$_2$ driven by SrTiO$_3$ capping layer
Authors:
G. Krieger,
L. Martinelli,
S. Zeng,
L. E. Chow,
K. Kummer,
R. Arpaia,
M. Moretti Sala,
N. B. Brookes,
A. Ariando,
N. Viart,
M. Salluzzo,
G. Ghiringhelli,
D. Preziosi
Abstract:
Superconductivity in infinite-layer nickelates holds exciting analogies with that of cuprates, with similar structures and $3d$-electron count. Using resonant inelastic x-ray scattering (RIXS) we studied electronic and magnetic excitations and charge density correlations in Nd$_{1-x}$Sr$_{x}$NiO$_2$ thin films with and without an SrTiO$_3$ capping layer. We observe dispersing magnons only in the c…
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Superconductivity in infinite-layer nickelates holds exciting analogies with that of cuprates, with similar structures and $3d$-electron count. Using resonant inelastic x-ray scattering (RIXS) we studied electronic and magnetic excitations and charge density correlations in Nd$_{1-x}$Sr$_{x}$NiO$_2$ thin films with and without an SrTiO$_3$ capping layer. We observe dispersing magnons only in the capped samples, progressively dampened at higher doping. In addition, we detect an elastic resonant scattering peak in the uncapped $x=0$ compound at wave vector (1/3,0), remindful of the charge order signal in hole doped cuprates. The peak weakens at $x=0.05$ and disappears in the superconducting $x=0.20$ film. The uncapped samples also present a higher degree of Ni$3d$-Nd$5d$ hybridization and a smaller anisotropy of the Ni$3d$ occupation with respect to the capped samples. The role of the capping on the possible hydrogen incorporation or on other mechanisms responsible for the electronic reconstruction far from the interface remains to be understood.
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Submitted 6 December, 2021;
originally announced December 2021.
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Experimental Evidence of t2g Electron-Gas Rashba Interaction Induced by Asymmetric Orbital Hybridization
Authors:
Ganesh Ji Omar,
Weilong Kong,
Hariom Jani,
Mengsha Li,
Jun Zhou,
Zhi Shiuh Lim,
Saurav Prakash,
Shengwei Zeng,
Sonu Hooda,
Thirumalai Venkatesan,
Yuan Ping Feng,
Stephen J. Pennycook,
Shen Lei,
A. Ariando
Abstract:
We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti-orbitals at the LaAlO3/SrTiO3 interface. This asymmetric orbital hybridization is modulated by introducing a LaFeO3 layer between LaAlO3 and SrTiO3, which alters the Ti-O lattice polarization and traps interfacial charge carriers, resulting in a large Rashba spin-orbit effect at the interface in th…
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We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti-orbitals at the LaAlO3/SrTiO3 interface. This asymmetric orbital hybridization is modulated by introducing a LaFeO3 layer between LaAlO3 and SrTiO3, which alters the Ti-O lattice polarization and traps interfacial charge carriers, resulting in a large Rashba spin-orbit effect at the interface in the absence of an external bias. This observation is verified through high-resolution electron microscopy, magneto-transport and first-principles calculations. Our results open hitherto unexplored avenues of controlling Rashba interaction to design next-generation spin-orbitronics.
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Submitted 5 November, 2022; v1 submitted 13 October, 2021;
originally announced October 2021.
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Remarkably Enhanced Dynamic Oxygen Migration on Graphene Oxide Supported by Copper Substrate
Authors:
Zihan Yan,
Wenjie Yang,
Hao Yang,
Chengao Ji,
Shuming Zeng,
Xiuyun Zhang,
Liang Zhao,
Yusong Tu
Abstract:
The dynamic covalent properties of graphene oxide (GO) are of fundamental interest to a broad range of scientific areas and technological applications. It remains a challenge to access the feasible dynamic reactions for reversibly breaking/reforming covalent bonds of oxygen functional groups on GO, although these reactions can be induced by photonic or mechanical routes, or mediated by adsorbed wa…
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The dynamic covalent properties of graphene oxide (GO) are of fundamental interest to a broad range of scientific areas and technological applications. It remains a challenge to access the feasible dynamic reactions for reversibly breaking/reforming covalent bonds of oxygen functional groups on GO, although these reactions can be induced by photonic or mechanical routes, or mediated by adsorbed water. Here, using the density functional theory calculations, we demonstrate the remarkably enhanced dynamic oxygen migration along the basal plane of GO supported by copper substrate (GO@copper), with the C-O bond breaking reaction and proton transfer between the neighboring epoxy and hydroxyl groups. Compared to that on GO, the energy barrier of oxygen migration on GO@copper is sharply reduced to be less than or comparable to thermal fluctuations, and meanwhile the crystallographic match between GO and copper substrate induces new oxygen migration paths on GO@copper. This work sheds light on the understanding of metal substrate-enhanced dynamic properties of GO, and evidences the strategy to tune the activity of two-dimension-interfacial oxygen groups for various potential applications.
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Submitted 25 January, 2022; v1 submitted 28 September, 2021;
originally announced September 2021.
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Superconductivity in infinite-layer nickelate La$_{1-x}$Ca$_x$NiO$_2$ thin films
Authors:
S. W. Zeng,
C. J. Li,
L. E. Chow,
Y. Cao,
Z. T. Zhang,
C. S. Tang,
X. M. Yin,
Z. S. Lim,
J. X. Hu,
P. Yang,
A. Ariando
Abstract:
We report the observation of superconductivity in infinite-layer Ca-doped LaNiO$_2$ (La$_{1-x}$Ca$_x$NiO$_2$) thin films and construct their phase diagram. Unlike the metal-insulator transition in Nd- and Pr-based nickelates, the undoped and underdoped La1-xCaxNiO2 thin films are entirely insulating from 300 K down to 2 K. A superconducting dome is observed at 0.15<x<0.3 with weakly insulating beh…
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We report the observation of superconductivity in infinite-layer Ca-doped LaNiO$_2$ (La$_{1-x}$Ca$_x$NiO$_2$) thin films and construct their phase diagram. Unlike the metal-insulator transition in Nd- and Pr-based nickelates, the undoped and underdoped La1-xCaxNiO2 thin films are entirely insulating from 300 K down to 2 K. A superconducting dome is observed at 0.15<x<0.3 with weakly insulating behavior at the overdoped regime. Moreover, the sign of the Hall coefficient $R_H$ changes at low temperature for samples with a higher doping level. However, distinct from the Nd- and Pr-based nickelates, the $R_H$-sign-change temperature remains at around 35 K as the doping increases, which begs further theoretical and experimental investigation in order to reveal the role of the 4f orbital to the (multi)band nature of the superconducting nickelates. Our results also emphasize the significant role of lattice correlation on the multiband structures of the infinite-layer nickelates.
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Submitted 24 February, 2022; v1 submitted 27 May, 2021;
originally announced May 2021.
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Observation of perfect diamagnetism and interfacial effect on the electronic structures in Nd0.8Sr0.2NiO2 superconducting infinite layers
Authors:
S. W. Zeng,
X. M. Yin,
C. J. Li,
L. E. Chow,
C. S. Tang,
K. Han,
Z. Huang,
Y. Cao,
D. Y. Wan,
Z. T. Zhang,
Z. S. Lim,
C. Z. Diao,
P. Yang,
A. T. S. Wee,
S. J. Pennycook,
A. Ariando
Abstract:
Nickel-based complex oxides have served as a playground for decades in the quest for a copper-oxide analog of the high-temperature superconductivity. They may provide clues towards understanding the mechanism and an alternative route for high-temperature superconductors. The recent discovery of superconductivity in the infinite-layer nickelate thin films has fulfilled this pursuit. However, materi…
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Nickel-based complex oxides have served as a playground for decades in the quest for a copper-oxide analog of the high-temperature superconductivity. They may provide clues towards understanding the mechanism and an alternative route for high-temperature superconductors. The recent discovery of superconductivity in the infinite-layer nickelate thin films has fulfilled this pursuit. However, material synthesis remains challenging, direct demonstration of perfect diamagnetism is still missing, and understanding of the role of the interface and bulk to the superconducting properties is still lacking. Here, we show high-quality Nd0.8Sr0.2NiO2 thin films with different thicknesses and demonstrate the interface and strain effects on the electrical, magnetic and optical properties. Perfect diamagnetism is achieved, confirming the occurrence of superconductivity in the films. Unlike the thick films in which the normal-state Hall-coefficient changes signs as the temperature decreases, the Hall-coefficient of films thinner than 5.5 nm remains negative, suggesting a thickness-driven band structure modification. Moreover, X-ray absorption spectroscopy reveals the Ni-O hybridization nature in doped infinite-layer nickelates, and the hybridization is enhanced as the thickness decreases. Consistent with band structure calculations on the nickelate/SrTiO3 heterostructure, the interface and strain effect induce a dominating electron-like band in the ultrathin film, thus causing the sign-change of the Hall-coefficient.
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Submitted 13 February, 2022; v1 submitted 29 April, 2021;
originally announced April 2021.
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Electronic subbands in the a-LaAlO$_3$/KTaO$_3$ interface revealed by quantum oscillations in high magnetic fields
Authors:
Km Rubi,
Shengwei Zeng,
Femke Bangma,
Michel Goiran,
A. Ariando,
Walter Escoffier,
Uli Zeitler
Abstract:
Investigating Shubnikov-de Haas (SdH) oscillations in high magnetic fields, we experimentally infer the electronic band structure of the quasi-two-dimensional electron gas (2DEG) at the ionic-liquid gated amorphous (a)-LaAlO$_3$/KTaO$_3$ interface. The angular dependence of SdH oscillations indicates a 2D confinement of a majority of electrons at the interface. However, additional SdH oscillations…
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Investigating Shubnikov-de Haas (SdH) oscillations in high magnetic fields, we experimentally infer the electronic band structure of the quasi-two-dimensional electron gas (2DEG) at the ionic-liquid gated amorphous (a)-LaAlO$_3$/KTaO$_3$ interface. The angular dependence of SdH oscillations indicates a 2D confinement of a majority of electrons at the interface. However, additional SdH oscillations with an angle-independent frequency observed at high tilt angles indicate the coexistence of 3D charge carriers extending deep into the KTaO$_3$. The SdH oscillations measured in magnetic fields perpendicular to the interface show four frequencies corresponding to four 2D subbands with different effective masses (0.20 $m_e$ - 0.55 $m_e$). The single-frequency oscillations originating from 3D electrons yields a larger effective mass of $\sim$ 0.70 $m_e$. Overall, the inferred subbands are in good agreement with the theoretical-calculations and angle-resolved photoemission spectroscopy studies on 2DEG at KTaO$_3$ surface.
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Submitted 24 March, 2021;
originally announced March 2021.
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Room-temperature colossal magnetoresistance in terraced single-layer graphene
Authors:
J. X. Hu,
J. Gou,
M. Yang,
G. J. Omar,
J. Y. Tan,
S. W. Zeng,
Y. P. Liu,
K. Han,
Z. S. Lim,
Z. Huang,
A. T. S. Wee,
A. Ariando
Abstract:
Disorder-induced magnetoresistance (MR) effect is quadratic at low perpendicular magnetic fields and linear at high fields. This effect is technologically appealing, especially in the two-dimensional (2D) materials such as graphene, since it offers potential applications in magnetic sensors with nanoscale spatial resolution. However, it is a great challenge to realize a graphene magnetic sensor ba…
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Disorder-induced magnetoresistance (MR) effect is quadratic at low perpendicular magnetic fields and linear at high fields. This effect is technologically appealing, especially in the two-dimensional (2D) materials such as graphene, since it offers potential applications in magnetic sensors with nanoscale spatial resolution. However, it is a great challenge to realize a graphene magnetic sensor based on this effect because of the difficulty in controlling the spatial distribution of disorder and enhancing the MR sensitivity in the single-layer regime. Here, we report a room-temperature colossal MR of up to 5,000% at 9 T in terraced single-layer graphene. By laminating single-layer graphene on a terraced substrate, such as TiO2 terminated SrTiO3, we demonstrate a universal one order of magnitude enhancement in the MR compared to conventional single-layer graphene devices. Strikingly, a colossal MR of >1,000% was also achieved in the terraced graphene even at a high carrier density of ~1012 cm-2. Systematic studies of the MR of single-layer graphene on various oxide- and non-oxide-based terraced surfaces demonstrate that the terraced structure is the dominant factor driving the MR enhancement. Our results open a new route for tailoring the physical property of 2D materials by engineering the strain through a terraced substrate.
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Submitted 19 January, 2021;
originally announced January 2021.
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Highly Distorted Lattices in Chemically Complex Alloys Produce Ultra-Elastic Materials with Extraordinary Elinvar Effects
Authors:
Q. F. He,
J. G. Wang,
H. A. Chen,
Z. Y. Ding,
Z. Q. Zhou,
L. H. Xiong,
J. H. Luan,
J. M. Pelletier,
J. C. Qiao,
Q. Wang,
L. L. Fan,
Y. Ren,
Q. S. Zeng,
C. T. Liu,
C. W. Pao,
D. J. Srolovitz,
Y. Yang
Abstract:
Conventional crystalline alloys usually possess a low atomic size difference in order to stabilize its crystalline structure. However, in this article, we report a single phase chemically complex alloy which possesses a large atomic size misfit usually unaffordable to conventional alloys. Consequently, this alloy develops a rather complex atomic-scale chemical order and a highly distorted crystall…
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Conventional crystalline alloys usually possess a low atomic size difference in order to stabilize its crystalline structure. However, in this article, we report a single phase chemically complex alloy which possesses a large atomic size misfit usually unaffordable to conventional alloys. Consequently, this alloy develops a rather complex atomic-scale chemical order and a highly distorted crystalline structure. As a result, this crystalline alloy displays an unusually high elastic strain limit (~2%), about ten times of that of conventional alloys, and an extremely low internal friction (< 2E-4) at room temperature. More interestingly, this alloy firmly maintains its elastic modulus even when the testing temperature rises from room temperature to 900 K, which is unmatched by the existing alloys hitherto reported. From an application viewpoint, our discovery may open up new opportunities to design high precision devices usable even under an extreme environment.
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Submitted 7 January, 2021;
originally announced January 2021.
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Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator
Authors:
W. X. Zhou,
H. J. Wu,
J. Zhou,
S. W. Zeng,
C. J. Li,
M. S. Li,
R. Guo,
J. X. Xiao,
Z. Huang,
W. M. Lv,
K. Han,
P. Yang,
C. G. Li,
Z. S. Lim,
H. Wang,
Y. Zhang,
S. J. Chua,
K. Y. Zeng,
T. Venkatesan,
J. S. Chen,
Y. P. Feng,
S. J. Pennycook,
A. Ariando
Abstract:
Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$T…
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Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ interface at room temperature. The polarity of a ~3.2 nm Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin film is preserved with a two-dimensional mobile carrier density of ~0.05 electron per unit cell. We show that the electronic reconstruction resulting from the competition between the built-in electric field of LaAlO$_3$ and the polarization of Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ is responsible for this unusual two-dimensional conducting polar phase. The general concept of exploiting mutually exclusive properties at oxide interfaces via electronic reconstruction may be applicable to other strongly-correlated oxide interfaces, thus opening windows to new functional nanoscale materials for applications in novel nanoelectronics.
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Submitted 11 July, 2020;
originally announced July 2020.
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Topological Hall Effect and Skyrmion-like Bubbles at a Charge-transfer Interface
Authors:
Zhi Shiuh Lim,
Changjian Li,
Zhen Huang,
Xiao Chi,
Jun Zhou,
Shengwei Zeng,
Ganesh Ji Omar,
Yuan Ping Feng,
Andrivo Rusydi,
Stephen John Pennycook,
Thirumalai Venkatesan,
Ariando Ariando
Abstract:
Exploring exotic interface magnetism due to charge transfer and strong spin-orbit coupling has profound application in future development of spintronic memory. Here, the emergence, tuning and interpretation of hump-shape Hall Effect from a CaMnO3/CaIrO3/CaMnO3 trilayer structure are studied in detail. The hump signal can be recognized as Topological Hall Effect suggesting the presence of Skyrmion-…
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Exploring exotic interface magnetism due to charge transfer and strong spin-orbit coupling has profound application in future development of spintronic memory. Here, the emergence, tuning and interpretation of hump-shape Hall Effect from a CaMnO3/CaIrO3/CaMnO3 trilayer structure are studied in detail. The hump signal can be recognized as Topological Hall Effect suggesting the presence of Skyrmion-like magnetic bubbles; but the debated alternative interpretation where the signal being an artefact between two cancelling Anomalous Hall Effect loops is also discussed. Firstly, by tilting the magnetic field direction, the evolution of Hall signal suggests transformation of the bubbles topology into a more trivial kind. Secondly, by varying the thickness of CaMnO3, the optimal thicknesses for the hump signal emergence are found, suggesting a tuning of charge transfer fraction. Using high-resolution transmission electron microscopy, a stacking fault is also identified, which distinguishes the top and bottom CaMnO3/CaIrO3 interfaces in terms of charge transfer fraction and possible interfacial Dzyaloshinskii-Moriya Interaction. Finally, a spin-transfer torque experiment revealed a low threshold current density of ~10^9 A/m^2 for initiating the motion of bubbles. This discovery opens a possible route for integrating Skyrmions with antiferromagnetic spintronics.
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Submitted 2 June, 2020;
originally announced June 2020.
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Phase diagram and superconducting dome of infinite-layer $\mathrm{Nd_{1-x}Sr_{x}NiO_{2}}$ thin films
Authors:
Shengwei Zeng,
Chi Sin Tang,
Xinmao Yin,
Changjian Li,
Mengsha Li,
Zhen Huang,
Junxiong Hu,
Wei Liu,
Ganesh Ji Omar,
Hariom Jani,
Zhi Shiuh Lim,
Kun Han,
Dongyang Wan,
Ping Yang,
Stephen John Pennycook,
Andrew T. S. Wee,
Ariando Ariando
Abstract:
Infinite-layer Nd1-xSrxNiO2 thin films with Sr doping level x from 0.08 to 0.3 were synthesized and investigated. We found a superconducting dome to be between 0.12 and 0.235 which is accompanied by a weakly insulating behaviour in both underdoped and overdoped regimes. The dome is akin to that in the electron-doped 214-type and infinite-layer cuprate superconductors. For x higher than 0.18, the n…
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Infinite-layer Nd1-xSrxNiO2 thin films with Sr doping level x from 0.08 to 0.3 were synthesized and investigated. We found a superconducting dome to be between 0.12 and 0.235 which is accompanied by a weakly insulating behaviour in both underdoped and overdoped regimes. The dome is akin to that in the electron-doped 214-type and infinite-layer cuprate superconductors. For x higher than 0.18, the normal state Hall coefficient ($R_{H}$) changes the sign from negative to positive as the temperature decreases. The temperature of the sign changes monotonically decreases with decreasing x from the overdoped side and approaches the superconducting dome at the mid-point, suggesting a reconstruction of the Fermi surface as the dopant concentration changes across the center of the dome.
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Submitted 2 October, 2020; v1 submitted 23 April, 2020;
originally announced April 2020.
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Characteristic Lengths of Interlayer Charge-Transfer in Correlated Oxide Heterostructures
Authors:
Ganesh Ji Omar,
Mengsha Li,
Xiao Chi,
Zhen Huang,
Zhi Shiuh Lim,
Saurav Prakash,
Shengwei Zeng,
Changjian Li,
Xiaojiang Yu,
Chunhua Tang,
Dongsheng Song,
Andrivo Rusydi,
Thirumalai Venkatesan,
Stephen John Pennycook,
Ariando Ariando
Abstract:
Using interlayer interaction to control functional heterostructures with atomic-scale designs has become one of the most effective interface-engineering strategies nowadays. Here, we demonstrate the effect of a crystalline LaFeO3 buffer layer on amorphous and crystalline LaAlO3/SrTiO3 heterostructures. The LaFeO3 buffer layer acts as an energetically favored electron acceptor in both LaAlO3/SrTiO3…
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Using interlayer interaction to control functional heterostructures with atomic-scale designs has become one of the most effective interface-engineering strategies nowadays. Here, we demonstrate the effect of a crystalline LaFeO3 buffer layer on amorphous and crystalline LaAlO3/SrTiO3 heterostructures. The LaFeO3 buffer layer acts as an energetically favored electron acceptor in both LaAlO3/SrTiO3 systems, resulting in modulation of interfacial carrier density and hence metal-to-insulator transition. For amorphous and crystalline LaAlO3/SrTiO3 heterostructures, the metal-to-insulator transition is found when the LaFeO3 layer thickness crosses 3 and 6 unit cells, respectively. Such different critical LaFeO3 thicknesses are explained in terms of distinct characteristic lengths of the redox-reaction-mediated and polar-catastrophe-dominated charge transfer, controlled by the interfacial atomic contact and Thomas-Fermi screening effect, respectively. Our results not only shed light on the complex interlayer charge transfer across oxide heterostructures but also provides a new route to precisely tailor the charge-transfer process at a functional interface.
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Submitted 24 March, 2020;
originally announced March 2020.
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Aperiodic quantum oscillations in the two-dimensional electron gas at the LaAlO3/SrTiO3 interface
Authors:
Km Rubi,
Julien Gosteau,
Raphaël Serra,
Kun Han,
Shengwei Zeng,
Zhen Huang,
Etienne Snoeck,
Rémi Arras,
Benedicte Warot-Fonrose,
Ariando,
Michel Goiran,
Walter Escoffier
Abstract:
Despite several attempts, the intimate electronic structure of two-dimensional electron systems buried at the interface between LaAlO3 and SrTiO3 still remains to be experimentally revealed. Here, we investigate the transport properties of a high-mobility quasi-two-dimensional electron gas at this interface under high magnetic field (55 T) and provide new insights for electronic band structure by…
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Despite several attempts, the intimate electronic structure of two-dimensional electron systems buried at the interface between LaAlO3 and SrTiO3 still remains to be experimentally revealed. Here, we investigate the transport properties of a high-mobility quasi-two-dimensional electron gas at this interface under high magnetic field (55 T) and provide new insights for electronic band structure by analyzing the Shubnikov-de Haas oscillations. Interestingly, the quantum oscillations are not 1/B-periodic and produce a highly non-linear Landau plot (Landau level index versus 1/B). Among possible scenarios, the Roth-Gao-Niu equation provides a natural explanation for 1/B-aperiodic oscillations in relation with the magnetic response functions of the system. Overall, the magneto-transport data are discussed in light of high-resolution scanning transmission electron microscopy analysis of the interface as well as calculations from density functional theory.
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Submitted 7 March, 2019;
originally announced March 2019.
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Dielectric Resonator Method For Determining Gap Symmetry Of Superconductors Through Anisotropic Nonlinear Meissner Effect
Authors:
Seokjin Bae,
Yuewen Tan,
Alexander P Zhuravel,
Lingchao Zhang,
Shengwei Zeng,
Yong Liu,
Thomas A. Lograsso,
Ariando T. Venkatesan,
Steven M. Anlage
Abstract:
We present a new measurement method which can be used to image gap nodal structure of superconductors whose pairing symmetry is under debate. This technique utilizes a high quality factor microwave resonance involving the sample of interest. While supporting a circularly symmetric standing wave current pattern, the sample is perturbed by a scanned laser beam, creating a photoresponse that was prev…
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We present a new measurement method which can be used to image gap nodal structure of superconductors whose pairing symmetry is under debate. This technique utilizes a high quality factor microwave resonance involving the sample of interest. While supporting a circularly symmetric standing wave current pattern, the sample is perturbed by a scanned laser beam, creating a photoresponse that was previously shown to reveal the superconducting gap anisotropy. Simulation and the measurement of the photoresponse of an unpatterned Nb film show less than 8\% anisotropy, as expected for a superconductor with nearly isotropic energy gap along with expected systematic uncertainty. On the other hand, measurement of a YBa$_2$Cu$_3$O$_{7-δ}$ thin film shows a clear 4-fold symmetric image with $\mathtt{\sim}12.5$\% anisotropy, indicating the well-known 4-fold symmetric $d_{x^2-y^2}$ gap nodal structure in the $ab$-plane. The deduced gap nodal structure can be further cross-checked by low temperature surface impedance data, which is simultaneously measured. The important advantage of the presented method over the previous spiral resonator method is that it does not require a complicated lithographic patterning process which limits one from testing various kinds of materials due to photoresponse arising from patterning defects. This advantage of the presented technique, and the ability to measure unpatterned samples such as planar thin films and single crystals, enables one to survey the pairing symmetry of a wide variety of unconventional superconductors.
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Submitted 3 April, 2019; v1 submitted 25 January, 2019;
originally announced January 2019.
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Oxygen Electromigration and Energy Band Reconstruction Induced by Electrolyte Field Effect at Oxide Interfaces
Authors:
S. W. Zeng,
X. M. Yin,
T. S. Herng,
K. Han,
Z. Huang,
L. C. Zhang,
C. J. Li,
W. X. Zhou,
D. Y. Wan,
P. Yang,
J. Ding,
A. T. S. Wee,
J. M. D. Coey,
T. Venkatesan,
A. Rusydi,
A. Ariando
Abstract:
Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3 (STO) crystals and La…
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Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3 (STO) crystals and LaAlO3 (LAO) overlayer through the measurements of electrical transport, X-ray absorption spectroscopy (XAS) and photoluminescence (PL) spectra. We found that oxygen vacancies (Ovac) were filled selectively and irreversibly after gating due to oxygen electromigration at the amorphous LAO/STO interface, resulting in a reconstruction of its interfacial band structure. Because of the filling of Ovac, the amorphous interface also showed an enhanced electron mobility and quantum oscillation of the conductance. Further, the filling effect could be controlled by the degree of the crystallinity of the LAO overlayer by varying the growth temperatures. Our results reveal the different effects induced by electrolyte gating, providing further clues to understand the mechanism of electrolyte gating on buried interfaces and also opening a new avenue for constructing high-mobility oxide interfaces.
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Submitted 9 November, 2018;
originally announced November 2018.
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Large polaron evolution in anatase TiO2 due to carrier and temperature dependence of electron-phonon coupling
Authors:
B. X. Yan,
D. Y. Wan,
X. Chi,
C. J. Li,
M. R. Motapothula,
S. Hooda,
P. Yang,
Z. Huang,
S. W. Zeng,
A. Gadekar,
S. J. Pennycook,
A. Rusydi,
Ariando,
J. Martin,
T. Venkatesan
Abstract:
The electronic and magneto transport properties of reduced anatase TiO2 epitaxial thin films are analyzed considering various polaronic effects. Unexpectedly, with increasing carrier concentration, the mobility increases, which rarely happens in common metallic systems. We find that the screening of the electron-phonon (e-ph) coupling by excess carriers is necessary to explain this unusual depende…
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The electronic and magneto transport properties of reduced anatase TiO2 epitaxial thin films are analyzed considering various polaronic effects. Unexpectedly, with increasing carrier concentration, the mobility increases, which rarely happens in common metallic systems. We find that the screening of the electron-phonon (e-ph) coupling by excess carriers is necessary to explain this unusual dependence. We also find that the magnetoresistance (MR) could be decomposed into a linear and a quadratic component, separately characterizing the transport and trap behavior of carriers as a function of temperature. The various transport behaviors could be organized into a single phase diagram which clarifies the nature of large polaron in this material.
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Submitted 5 March, 2023; v1 submitted 11 November, 2017;
originally announced November 2017.
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The Mechanism of Electrolyte Gating on High-Tc Cuprates: The Role of Oxygen Migration and Electrostatics
Authors:
Lingchao Zhang,
Shengwei Zeng,
Xinmao Yin,
Teguh Citra Asmara,
Ping Yang,
Kun Han,
Yu Cao,
Wenxiong Zhou,
Dongyang Wan,
Chi Sin Tang,
Andrivo Rusydi,
Ariando,
Thirumalai Venkatesan
Abstract:
Electrolyte gating is widely used to induce large carrier density modulation on solid surfaces to explore various properties. Most of past works have attributed the charge modulation to electrostatic field effect. However, some recent reports have argued that the electrolyte gating effect in VO2, TiO2 and SrTiO3 originated from field-induced oxygen vacancy formation. This gives rise to a controver…
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Electrolyte gating is widely used to induce large carrier density modulation on solid surfaces to explore various properties. Most of past works have attributed the charge modulation to electrostatic field effect. However, some recent reports have argued that the electrolyte gating effect in VO2, TiO2 and SrTiO3 originated from field-induced oxygen vacancy formation. This gives rise to a controversy about the gating mechanism, and it is therefore vital to reveal the relationship between the role of electrolyte gating and the intrinsic properties of materials. Here, we report entirely different mechanisms of electrolyte gating on two high-Tc cuprates, NdBa2Cu3O7-δ (NBCO) and Pr2-xCexCuO4 (PCCO), with different crystal structures. We show that field-induced oxygen vacancy formation in CuO chains of NBCO plays the dominant role while it is mainly an electrostatic field effect in the case of PCCO. The possible reason is that NBCO has mobile oxygen in CuO chains while PCCO does not. Our study helps clarify the controversy relating to the mechanism of electrolyte gating, leading to a better understanding of the role of oxygen electro migration which is very material specific.
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Submitted 4 October, 2017;
originally announced October 2017.
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Electrical Properties and Subband Occupancy at the (La,Sr)(Al,Ta)O$_3$/SrTiO$_3$ Interface
Authors:
K. Han,
Z. Huang,
S. W. Zeng,
M. Yang,
C. J. Li,
W. X. Zhou,
X. Renshaw Wang,
T. Venkatesan,
J. M. D. Coey,
M. Goiran,
W. Escoffier,
Ariando
Abstract:
The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{0.3}$/SrTiO$_{0.3}$ (LSAT/STO) interface. Before oxygen annealing, the as-grown interface exhibits a high electron density…
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The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{0.3}$/SrTiO$_{0.3}$ (LSAT/STO) interface. Before oxygen annealing, the as-grown interface exhibits a high electron density and electron occupancy of two subbands: higher-mobility electrons ($μ_1\approx{10^4}$ cm$^2$V$^{-1}$s$^{-1}$ at 2 K) occupy the lower-energy $3d_{xy}$ subband, while lower-mobility electrons ($μ_1\approx{10^3}$ cm$^{2}$V$^{-1}$s$^{-1}$ at 2 K) propagate in the higher-energy $3d_{xz/yz}$-dominated subband. After removing oxygen vacancies by annealing in oxygen, only a single type of 3dxy electrons remain at the annealed interface, showing tunable Shubnikov-de Haas (SdH) oscillations below 9 T at 2 K and an effective mass of $0.7m_e$. By contrast, no oscillation is observed at the as-grown interface even when electron mobility is increased to $50,000$ cm$^{2}$V$^{-1}$s$^{-1}$ by gating voltage. Our results reveal the important roles of both carrier mobility and subband occupancy in tuning the quantum transport at oxide interfaces.
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Submitted 29 June, 2017;
originally announced June 2017.
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Controlling Kondo-like Scattering at the SrTiO3-based Interfaces
Authors:
K. Han,
N. Palina,
S. W. Zeng,
Z. Huang,
C. J. Li,
W. X. Zhou,
D-Y. Wan,
L. C. Zhang,
X. Chi,
R. Guo,
J. S. Chen,
T. Venkatesan,
A. Rusydi,
Ariando
Abstract:
The observation of magnetic interaction at the interface between nonmagnetic oxides has attracted much attention in recent years. In this report, we show that the Kondo-like scattering at the SrTiO3-based conducting interface is enhanced by increasing the lattice mismatch and growth oxygen pressure PO2. For the 26-unit-cell LaAlO3/SrTiO3 (LAO/STO) interface with lattice mismatch being 3.0%, the Ko…
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The observation of magnetic interaction at the interface between nonmagnetic oxides has attracted much attention in recent years. In this report, we show that the Kondo-like scattering at the SrTiO3-based conducting interface is enhanced by increasing the lattice mismatch and growth oxygen pressure PO2. For the 26-unit-cell LaAlO3/SrTiO3 (LAO/STO) interface with lattice mismatch being 3.0%, the Kondo-like scattering is observed when PO2 is beyond 1 mTorr. By contrast, when the lattice mismatch is reduced to 1.0% at the (La0.3Sr0.7)(Al0.65Ta0.35)O3/SrTiO3 (LSAT/STO) interface, the metallic state is always preserved up to PO2 of 100 mTorr. The data from Hall measurement and X-ray absorption near edge structure (XANES) spectroscopy reveal that the larger amount of localized Ti3+ ions are formed at the LAO/STO interface compared to LSAT/STO. Those localized Ti3+ ions with unpaired electrons can be spin-polarized to scatter mobile electrons, responsible for the Kondo-like scattering observed at the LAO/STO interface.
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Submitted 12 May, 2016;
originally announced May 2016.
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Interaction-Driven Spontaneous Quantum Hall Effect on Kagome Lattice
Authors:
W. Zhu,
S. S. Gong,
T. S. Zeng,
L. Fu,
D. N. Sheng
Abstract:
Non-interacting topological states of matter can be realized in band insulators with intrinsic spin-orbital couplings as a result of the nontrivial band topology. In recent years, the possibility of realizing novel interaction-driven topological phase has attracted a lot of research activities, which may significantly extend the classes of topological states of matter. Here, we report a new findin…
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Non-interacting topological states of matter can be realized in band insulators with intrinsic spin-orbital couplings as a result of the nontrivial band topology. In recent years, the possibility of realizing novel interaction-driven topological phase has attracted a lot of research activities, which may significantly extend the classes of topological states of matter. Here, we report a new finding of an interaction-driven spontaneous quantum Hall effect (QHE) (Chern insulator) emerging in an extended fermion-Hubbard model on kagome lattice. By means of the state-of-the-art density-matrix renormalization group, we expose universal properties of the QHE including time-reversal symmetry spontaneous breaking and quantized Hall conductance. By accessing the ground state in large systems, we demonstrate the robustness of the QHE against finite-size effects. Moreover, we map out a phase diagram and identify two competing charge density wave phases by varying interactions, where transitions to the QHE phase are determined to be of the first order. Our study provides a "proof-of-the-principle" demonstration of interaction-driven QHE without requirement of external magnetic field or magnetic doping.
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Submitted 26 April, 2016;
originally announced April 2016.
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High field magneto-transport in two-dimensional electron gas LaAlO3/SrTiO3
Authors:
Ming Yang,
Mathieu Pierre,
Olivier Toressin,
Michel Goiran,
Walter Escoffier,
Shengwei Zeng,
Zhen Huang,
Han Kun,
Thirumalai Venkatesan,
Ariando,
Michael Coey
Abstract:
Transport properties of the complex oxide LaAlO3/SrTiO3 interface are investigated under high magnetic field (55T). By rotating the sample with respect to the magnetic field, the two-dimensional nature of charge transport is clearly established. Small oscillations of the agnetoresistance with altered periodicity are observed when plotted versus inverse magnetic field. We attribute this effect to R…
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Transport properties of the complex oxide LaAlO3/SrTiO3 interface are investigated under high magnetic field (55T). By rotating the sample with respect to the magnetic field, the two-dimensional nature of charge transport is clearly established. Small oscillations of the agnetoresistance with altered periodicity are observed when plotted versus inverse magnetic field. We attribute this effect to Rashba spin-orbit coupling which remains consistent with large negative magnetoresistance when the field is parallel to the sample plane. A large inconsistency between the carrier density extracted from Shubnikov-de Haas analysis and from the Hall effect is explained by the contribution to transport of at least two bands with different mobility.
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Submitted 12 April, 2016;
originally announced April 2016.
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Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface
Authors:
Shengwei Zeng,
Weiming Lü,
Zhen Huang,
Zhiqi Liu,
Kun Han,
Kalon Gopinadhan,
Changjian Li,
Rui Guo,
Wenxiong Zhou,
Haijiao Harsan Ma,
Linke Jian,
T Venkatesan,
Ariando
Abstract:
Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ (LAO/STO) interface through ionic liquid-as…
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Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ (LAO/STO) interface through ionic liquid-assisted electric field effect. By changing the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19380 cm$^2$/Vs are realized, leading to quantum oscillations of the conductivity at the LAO/STO interface. The present results suggest that high-mobility oxide interfaces which exhibit quantum phenomena could be obtained by ionic liquid-assisted field effect.
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Submitted 28 March, 2016;
originally announced March 2016.
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The Effect of Polar Fluctuation and Lattice Mismatch on Carrier Mobility at Oxide Interfaces
Authors:
Z. Huang,
K. Han,
S. W. Zeng,
M. Motapothula,
W. M. Lü,
C. J. Li,
W. X. Zhou,
J. M. D. Coey,
T. Venkatesan,
Ariando
Abstract:
Since the discovery of two-dimensional electron gas (2DEG) at the oxide interface of LaAlO3/SrTiO3, improving carrier mobility has become an important issue for device applications. In this paper, by using an alternate polar perovskite insulator (La0.3Sr0.7)(Al0.65Ta0.35)O3 (LSAT) for reducing lattice mismatch from 3.0% to 1.0%, the low-temperature carrier mobility has been increased 30 fold to 35…
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Since the discovery of two-dimensional electron gas (2DEG) at the oxide interface of LaAlO3/SrTiO3, improving carrier mobility has become an important issue for device applications. In this paper, by using an alternate polar perovskite insulator (La0.3Sr0.7)(Al0.65Ta0.35)O3 (LSAT) for reducing lattice mismatch from 3.0% to 1.0%, the low-temperature carrier mobility has been increased 30 fold to 35,000 cm2V-1s-1. Moreover, two critical thicknesses for the LSAT/SrTiO3 (001) interface are found: one at 5 unit cell for appearance of the 2DEG, the other at 12 unit cell for a peak in the carrier mobility. By contrast, the conducting (110) and (111) LSAT/STO interfaces only show a single critical thickness of 8 unit cells. This can be explained in terms of polar fluctuation arising from LSAT chemical composition. In addition to lattice mismatch and crystal symmetry at the interface, polar fluctuation arising from composition has been identified as an important variable to be tailored at the oxide interfaces to optimise the 2DEG transport.
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Submitted 7 July, 2015;
originally announced July 2015.
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Two-dimensional superconductor-insulator quantum phase transitions in an electron-doped cuprate
Authors:
S. W. Zeng,
Z. Huang,
W. M. Lv,
N. N. Bao,
K. Gopinadhan,
L. K. Jian,
T. S. Herng,
Z. Q. Liu,
Y. L. Zhao,
C. J. Li,
H. J. Harsan Ma,
P. Yang,
J. Ding,
T. Venkatesan,
Ariando
Abstract:
We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by ele…
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We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by electric and magnetic field are quantum phase transitions and the transitions are governed by percolation effects - quantum mechanical in the former and classical in the latter case. Compared to the hole-doped cuprates, the SITs in electron-doped system occur at critical sheet resistances (Rc) much lower than the pair quantum resistance RQ=h/(2e)2=6.45 kΩ, suggesting the possible existence of fermionic excitations at finite temperature at the insulating phase near SITs.
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Submitted 7 July, 2015;
originally announced July 2015.
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Bandgap Controlling of the Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in SrTiO3
Authors:
Z. Q. Liu,
W. Lu,
S. W. Zeng,
J. W. Deng,
Z. Huang,
C. J. Li,
M. Motapothula,
W. M. Lü,
L. Sun,
K. Han,
J. Q. Zhong,
P. Yang,
N. N. Bao,
W. Chen,
J. S. Chen,
Y. P. Feng,
J. M. D. Coey,
T. Venkatesan,
Ariando
Abstract:
We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 °C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is comprehensively investigated and finally attributed to Sr/Ti antisite point defects, supported by density functional theory calculations. More importantly, the bandgap enhancem…
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We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 °C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is comprehensively investigated and finally attributed to Sr/Ti antisite point defects, supported by density functional theory calculations. More importantly, the bandgap enhancement can be utilized to tailor the electronic and magnetic phases of the two-dimensional electron gas (2DEG) in STO-based interface systems. For example, the oxygen-vacancy-induced 2DEG (2DEG-V) at the interface between amorphous LaAlO3 and STO films is more localized and the ferromagnetic order in the STO-film-based 2DEG-V can be clearly seen from low-temperature magnetotransport measurements. This opens an attractive path to tailor electronic, magnetic and optical properties of STO-based oxide interface systems under intensive focus in the oxide electronics community. Meanwhile, our study provides key insight into the origin of the fundamental issue that STO films are difficult to be doped into the fully metallic state by oxygen vacancies.
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Submitted 29 April, 2014; v1 submitted 28 April, 2014;
originally announced April 2014.