- Electromigration book, Electromigration in copper interconnect, Education, History, Deliberative Democracy, Democracy and Citizenship Education, and 9 moreRadical Democracy, New Models Of Participatory And Direct Democracy, Electronic Democracy, Democracy, e-Democracy, Participatory Democracy, Governance and Democracy, Climate Change, and Renewable Energyedit
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In this paper the design and measurement of a 2.5 V CMOS laser drive are presented, which is able to drive Fabry-Perot as well as VCSEL laser diodes at a bit rate of 2.5 Gbits/sec. The inputs of the circuit are PECL compliant. The circuit... more
In this paper the design and measurement of a 2.5 V CMOS laser drive are presented, which is able to drive Fabry-Perot as well as VCSEL laser diodes at a bit rate of 2.5 Gbits/sec. The inputs of the circuit are PECL compliant. The circuit has a programmable bias current ranging from 0 to 60 mA and a programmable modulation
Research Interests: Engineering, Laser, Cmos, High Speed, Ranging, and 3 moreFabry Perot, Laser Diode, and FMCW Laser ranging
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This paper deals with MIS grating type solar cells on single crystalline silicon substrates. Experiments are reported that confirm theoretical predictions showing that a minority carrier blocking backside contact is necessary to obtain... more
This paper deals with MIS grating type solar cells on single crystalline silicon substrates. Experiments are reported that confirm theoretical predictions showing that a minority carrier blocking backside contact is necessary to obtain good collection efficiencies, at least in MIS grating cells where collection only occurs through a two-dimensional diffusion mechanism. On the other hand, in grating cells where an
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Niels Van Thienen, Wouter Volkaerts, Maxime De Wit, Alexander Standaert, Yang Zhang, Piet De Pauw, Patrick Reynaert, (2015), RF-through-Plastics: an Alternative to Copper and Optical Fiber MOST Informative (2015) Archived version Author... more
Niels Van Thienen, Wouter Volkaerts, Maxime De Wit, Alexander Standaert, Yang Zhang, Piet De Pauw, Patrick Reynaert, (2015), RF-through-Plastics: an Alternative to Copper and Optical Fiber MOST Informative (2015) Archived version Author manuscript: the content is identical to the content of the published paper, but without the final typesetting by the publisher Published version http://www.mostforum.com
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Research Interests: Mechanical Engineering, Algorithms, Manufacturing, Nonlinear Optics, Modeling, and 15 moreMonte Carlo, Mechanism Design, Automotive Industry, Electromagnetic Interference, Cars, Data acquisition, Boundary Conditions, High Speed, Micro Optics, Indexation, Boundary Condition, Optical Fibers, Coupled Tank System, Data Acquisition System, and Light Emitting Diode
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Summary form only given. The coming years video, high performing navigation systems, camera systems allowing 360 degree surround view, night vision, adaptive cruise control,‥‥. will be introduced in cars. These applications make that the... more
Summary form only given. The coming years video, high performing navigation systems, camera systems allowing 360 degree surround view, night vision, adaptive cruise control,‥‥. will be introduced in cars. These applications make that the bandwidth requirements increase dramatically and gigabit networks will have to be introduced. The dedicated low price, high reliability, high level of EMC immunity and last but not least extremely wide temperature range requirements necessitate the development of dedicated automotive datacom technologies. This paper overviews the possibilities of different candidate optical technologies versus the electrical technologies. A physical layer using VCSEL technology and using 200 um core plastic cladded silica fiber is shown to be the most promising optical datacom technology for automotive applications.
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This paper provides a critical review on early resistance changes observed during electromigration testing of Al, AlSi and AlSiCu metal lines. At present, high resolution in situ electrical resistance measurements are widely accepted as a... more
This paper provides a critical review on early resistance changes observed during electromigration testing of Al, AlSi and AlSiCu metal lines. At present, high resolution in situ electrical resistance measurements are widely accepted as a valuable tool for the study of electromigration. It will be shown however that the results of these measurements should be interpreted with care. It will
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A new method is presented to evaluate the resistance to electromigration of on-chip interconnects. The method is based on the high resolution in-situ electrical resistance technique. During high temperature and high current density stress... more
A new method is presented to evaluate the resistance to electromigration of on-chip interconnects. The method is based on the high resolution in-situ electrical resistance technique. During high temperature and high current density stress measurements, two types of processes occur simultaneously: structure-relaxation and electromigration. In order to study these processes separately, the experimental conditions are adapted. The electrical resistance and TCR is measured before and after structure-relaxation and/or electromigration. Using Matthiessen's rule, it is possible to separate the contribution of the resistivity variation from the variation in geometry. The first process causes a decrease of the resistivity, whereas the second causes an increase. The influence of Cu-addition and deposition temperature is also investigated. Correlation of the resistivity variations with conventional mean time to failure (MTTF) data is demonstrated. As a consequence, with our short-time method, predictions of the resistance to electromigration of on-chip interconnects can be made after typical test times of 24 to 48 hours.
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This paper presents a faster method to assess the electromigration performance of metal tracks. The method is based on high accuracy measurements (in the PPM range) which allow monitoring of resistance variations in NIST metal tracks. It... more
This paper presents a faster method to assess the electromigration performance of metal tracks. The method is based on high accuracy measurements (in the PPM range) which allow monitoring of resistance variations in NIST metal tracks. It is shown that, due to the high accuracy, differences in degradation can be observed after a relatively short stress time and the failure criterion for time-to-failure (TTF) can be decreased. By decreasing the failure criterion for resistance changes from the typical range of 20 to 30% to a range of 1 to 5%, electromigration test time can be reduced by a factor of four. It was also shown that reducing the failure criterion has no impact on the determined values of thermal activation energy E, and current acceleration factor n. Finally, a new strategy is proposed: by using a 1% failure criterion for determination of Ea and n (at 3 temperatures and 3 current densities) and a 30% failure criterion for determination of the cumulative failure curve (1 temperature and 1 current density), the total test time duration can be reduced by a factor of four and provides the same information than a conventional electromigration test
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In this work, a fast identification of Iddq failures using spectroscopic photon emission microscopy (SPEMMI) is proposed. The spectra obtained from failure sites on the Iddq failed chips were compared with the ones of known defective... more
In this work, a fast identification of Iddq failures using spectroscopic photon emission microscopy (SPEMMI) is proposed. The spectra obtained from failure sites on the Iddq failed chips were compared with the ones of known defective components. Four distinguishable spectra categories were identified. They were attributed to gate oxide breakdown, metal shorts, blackbody radiation, and ESD caused junction spiking. The