Research Interests:
We present experimental characterization and numerical simulation of metal-semiconductor-metal type ultrafast photoswitches made from low temperature grown GaAs doped with beryllium (LT-GaAs:Be). Generation and detection of electrical... more
We present experimental characterization and numerical simulation of metal-semiconductor-metal type ultrafast photoswitches made from low temperature grown GaAs doped with beryllium (LT-GaAs:Be). Generation and detection of electrical pulses are performed using a femtosecond laser source and a photoconductive sampling set up that involves nonlinear effect in the structure. Following the expected picosecond electrical response a longer relaxation tail is clearly
Research Interests:
Terahertz radiation from CdxHg1-xTe samples excited by femtosecond Ti:sapphire laser pulses were measured by using an ultrafast photoconductive antenna manufactured from low-temperature grown GaAs. Terahertz fields radiated by the samples... more
Terahertz radiation from CdxHg1-xTe samples excited by femtosecond Ti:sapphire laser pulses were measured by using an ultrafast photoconductive antenna manufactured from low-temperature grown GaAs. Terahertz fields radiated by the samples of all three investigated alloy compositions with x=0, 0.2, and 0.3 were of the same order of magnitude. No azimuthal angle dependence of the radiated signal was detected, which evidences