www.MaterialsViews.com
www.advelectronicmat.de
Niko Münzenrieder,* Giuseppe Cantarella, Christian Vogt, Luisa Petti, Lars Büthe,
Giovanni A. Salvatore, Yang Fang, Renzo Andri, Yawhuei Lam, Rafael Libanori,
Daniel Widner, André R. Studart, and Gerhard Tröster
Nowadays, electronics is diverging from being bulky and rigid
and is becoming lightweight and flexible. This development
not only leads to new applications covering all aspects of wearable electronics,[1] ranging from smart textiles[2] to skin mount
devices,[3] but enables also new cost efficient fabrication techniques.[4] Extremely bendable electronics based on amorphous
silicon,[5] organic,[6,7] and oxide[8] semiconductors have been
realized by the use of micrometer thin substrates. However,
epidermal electronics,[9,10] smart implants,[11] or artificial electronic skins for robots[12] require stretchable electronic devices.
Since the stretchability of human skin varies between 20% and
70%,[9,13] elastic electronics have to survive similar elongations.
State-of-the-art elastic electronics are classified into three
main groups: first, conductive interconnection lines can be
realized by using intrinsically elastic conductors,[14] air-bridge
structures,[15] and metal lines on prestretched substrates[16]
or patterned into meander-like geometries.[17] Examples are
carbon nanotubes embedded into a rubber matrix (stretchable
up to 100%),[14] or metal films on porous polydimethylsiloxane
(PDMS) (stretchable by 80%).[18] Furthermore, oxide transistors
roll-transferred to elastic PDMS substrates can be stretched
by 5%.[19] Significantly more stretchable active devices made
from brittle materials are realized by two other approaches,
namely by the fabrication on elastomeric substrates with stiff
islands and by the use of “wavy” layouts using prestretched
substrates.[20,21] The use of stiff islands allows minimizing the
strain experienced by the devices. Here 20% stretchability was
achieved for amorphous silicon and oxide thin-film transistors
(TFTs) fabricated on PDMS patterned with stiff polyimide or
epoxy-based photoresist islands.[22] At the same time off-theshelf LEDs on an elastic composite substrate stayed functional
while strained by 150%.[23] On the other hand, wavy electronics
Dr. N. Münzenrieder
Sensor Technology Research Center
School of Engineering and Informatics
University of Sussex
BN1 9QT Falmer, Brighton, UK
E-mail: n.s.munzenrieder@sussex.ac.uk
Dr. N. Münzenrieder, G. Cantarella, C. Vogt, L. Petti,
L. Büthe, Dr. G. A. Salvatore, Y. Fang, R. Andri, Y. Lam, Prof. G. Tröster
Electronics Laboratory
Department of Information Technology and Electrical Engineering
ETH Zurich, Gloriastrasse 35, 8092 Zürich, Switzerland
Dr. R. Libanori, D. Widner, Prof. A. R. Studart
Complex Materials
Department of Materials
ETH Zurich, Wolfgang-Pauli-Str. 10, 8093 Zürich, Switzerland
DOI: 10.1002/aelm.201400038
Adv. Electron. Mater. 2015, 1, 1400038
gains its elasticity from its accordion-like structure. Such structures are generally realized using prestrained substrates, where
the relaxation of the substrate after the fabrication leads to the
formation of wrinkles on the surface. Wavy transistors made
of organic materials or silicon nanomembranes demonstrated
stretchability >200%.[6,21,24] This method also enabled stretchable magnetic field sensors,[25] and organic light-emitting
diodes.[26]
Even more challenging than the fabrication of stretchable
electronics devices is the realization of conformal electronics
which is stretchable in multiple dimensions.[12] 3D deformed
a-Si TFTs on a spherical dome can survive strains of 6%,[27] and
wavy organic electronic components on a biaxial prestretched
elastomer are able to withstand a 35% area decrease.[6]
The challenges concerning the fabrication of stretchable
active electronic devices can be summarized as follows: Stretchable substrates need to provide thermal, mechanical, and
chemical stability, as well as a surface roughness compatible
with the device fabrication process.[28] Additionally, wavy electronics need to survive extremely small bending radii, in the
micrometer range, caused by the wrinkles, elastomers with
stiff islands at the same time have to overcome the delamination problem caused by stress localization at the interfaces.
Here, two approaches based on wavy electronics, as well as on
locally reinforced composite substrates are investigated. Both
techniques result in inorganic electronic devices reversibly
stretchable to strain values >200%. Furthermore, the developed
technology is used to demonstrate the basic components of a
stretchable electronic system, including a sensor and integrated
circuits for signal processing and power transmission wrapped
around 3D surfaces. This proves the potential of the presented
technology for electronic skins and smart implants.
The fabrication of electronic devices in general requires
temperatures above 100 °C, the use of different etchants and
solvents, as well as a substrate surface roughness in the nanometer range. Since these requirements are hardly compatible
with elastic substrates,[28] the proposed stretchable electronics
is manufactured in a two-step process: The devices are fabricated on a rigid substrate and afterwards transferred to an elastomeric polymer. A silicon wafer covered with polyvinyl alcohol
(PVA) and parylene is used as substrate. After the device fabrication is finished, the PVA is dissolved in water and the
1 µm-thin parylene membrane carrying the electronic devices is
released (Figure S1, Supporting Information),[8] and transferred
to any arbitrary new substrate. Since transistors are the most
important building blocks for all electronic systems, Figure 1a
shows a schematic of the fabricated thin-film transistors based
on amorphous indium-gallium-zinc-oxide (IGZO) as semiconductor, high-k Aluminum oxide (εr ≈ 9.5) as gate insulator and
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
wileyonlinelibrary.com
(1 of 7) 1400038
COMMUNICATION
Stretchable and Conformable Oxide Thin-Film Electronics
www.MaterialsViews.com
COMMUNICATION
www.advelectronicmat.de
Figure 1. a) Structure, materials, and layer thicknesses of the flexible oxide TFTs, fabricated using an inverted staggered bottom-gate geometry. The
maximum process temperature is 150 °C. b) The high flexibility (thickness of electronic membrane: 1 µm)[8] and low weight (≈2.6 g m−2) enable the
integration of the electronics into nearly any kind of object like fully functional TFTs on dandelion seeds. c) Characteristics of an IGZO TFT attached to
a dandelion seed. The oxide transistors exhibit a threshold voltage of 0.4 V, a carrier mobility of 11.3 cm2 V−1 s−1, a subthreshold swing of 180 mV dec−1,
and an on/off current ratio >107.
metals.[29,30] The mechanical properties of these devices are
determined by the 1 µm-thin parylene membrane which enables bending radii in the micrometer range (the IGZO TFTs
survive mechanical strain of ≈1%).[8,31] This flexibility and the
low weight of the membrane are demonstrated in Figure 1b,c,
where the electronic membrane is transferred to the seeds of a
dandelion. The electrical properties are determined by the materials in the TFT stack. Even on this unconventional substrate,
the IGZO TFTs exhibit a carrier mobility of 11.3 cm2 V−1 s−1
and a threshold voltage of 0.4 V. The obtained mobility is several orders of magnitude higher than the mobility of organic
semiconductors and amorphous silicon.[32] Additionally oxide
semiconductors like IGZO are transparent and their amorphous structure allows cost-effective deposition on large scale
substrates. Hence the presented devices exhibit a set of properties hardly achievable with other materials.
To guarantee the functionality of the electronics on a stretchable substrate, it is necessary to ensure that the mechanical
strains experienced by the presented oxide based electronic
1400038 (2 of 7)
wileyonlinelibrary.com
devices always stays below ≈1%.[31] The high flexibility and the
possibility to transfer TFTs on a membrane to different substrates makes it possible to form wavy structures and to place
them on composite substrates with stiff patches, whereas both
approaches have advantages and disadvantages.[21]
Stretchable electronics without the need for stiff islands can
be realized by the wavy electronics method (Figure 2a).[21] Since
the formation of wrinkles on the surface of a substrate mimics
the behavior of the human skin, wavy electronic devices are
an excellent candidate for the realization of artificial skins.
Furthermore, similar to the used electronic membrane, wavy
structures can be used to realize stretchable electronics of arbitrary size. Here, the wrinkles are formed by placing the IGZO
TFT membrane on a sticky, prestretched elastomer (VHB tape,
3M). The subsequent relaxation of the elastomer causes a network of out-of-plane wrinkles perpendicular to the applied prestrain. Figure 2b shows optical micrographs of the electronic
devices taken at different stages of the relaxing and stretching
cycle of a substrate, prestretched by 210%. The length change
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Adv. Electron. Mater. 2015, 1, 1400038
www.MaterialsViews.com
www.advelectronicmat.de
COMMUNICATION
Figure 2. a) Realization of stretchable electronics using a wavy surface. b) Formation of wrinkles at different levels of strain: The electronic parylene
membrane is attached to an elastomer prestretched by 210%. The membrane is well attached. If the strain is reduced wrinkles are formed on the
surface, if the substrate is restretched the wrinkles disappear. c) SEM image and height profile measurement of the wavy surface of a relaxed substrate
(initial strain: 100%). Wrinkles are formed perpendicular to the initial strain, they exhibit an average height and width of ≈150 µm and ≈200 µm.
d) Characteristics of a TFT (initial strain: 210%) measured at different strain values down to 0%. The performance parameter evolution shows that VTH
shifts by <100 mV and µ varies by >2%. e) Influence of up to 2000 cycles of repeated stretching and relaxing of elastic TFTs (maximum an initial strain:
70%). The transfer characteristic and the corresponding performance parameter evolution show that the TFTs stay fully functional, whereas VTH and µ
change by ≈200 mV and ≈2%. f) A 70% prestretched sticky tape with electronics on to the joint of a human thumb.
of the elastomeric substrate is used as a reference to calculate
the strain, even if the length change of the TFT membrane
is slightly smaller (≈150%). This is because the membrane is
stiffer than the elastomer and the elastomer does not fully relax
after being stretched. The good adhesion of the TFT membrane
on the elastomer ensures that the wrinkles disappear nearly
completely after restretching. The wrinkles were characterized
by profilometer and scanning electron microscope (SEM) measurements (Figure 2c), they exhibit heights between 100 and
200 µm and a minimum bending radius of 40 µm. This
bending radius induces ≈0.4% tensile strain into the TFT
membrane and has no significant influence on the electronics.
Adv. Electron. Mater. 2015, 1, 1400038
Figure 2d shows the characteristics, and the corresponding evolution of the mobility and threshold voltage of a 210% stretched
TFT after exposed to different levels of strain down to 0%.
Although the length of the substrate changes by more than
a factor of 3, the measurement resulted in a decrease of the
threshold voltage by ≈90 mV, and a variation of the transistor
mobility by <2%. Since the dimensions of the wrinkles are comparable to the dimensions of the TFTs, which leads to a coverage of the individual TFTs under the wrinkles, TFTs on a fully
relaxed substrate cannot be contacted. Corresponding measurements taken on the wrinkly surface of a partially relaxed substrate (and not after restretching) can be found in Figure S2,
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
wileyonlinelibrary.com
(3 of 7) 1400038
www.MaterialsViews.com
COMMUNICATION
www.advelectronicmat.de
Supporting Information. To simulate the every-day use, the
influence of multiple repetitions of elongation and relaxation
was evaluated. For this cycling experiment, a maximum elongation of 70% was chosen because this corresponds to the maximum stretchability of human skin.[9,13] Figure 2e illustrates the
influence of repeated stretching and relaxation cycles on the
TFT transfer characteristic and performance parameters. Up
to 2000 stretching and relaxation cycles change the threshold
voltage and mobility by only ≈50 mV and less than 4%. As visualized in Figure 2f, where a 70% prestretched electronic substrate is attached to the joint of a human thumb, the presented
wavy electronics can be employed to realize electronic patches
and skins.
In contrast to wavy structures, electronics on stiff patches
are not significantly deformed during stretching. Here, local
mechanical strain on the device was minimized by using a
stretchable multilayered composite substrate with mechanically
graded patches exhibiting a gradual and discrete transition of the
elastic modulus from 40 to 5150 MPa.[23] This gradual transition
prevents delamination of the mechanically graded patches from
the stretchable substrates under strain. Details concerning the
substrate composition can be found in Figure S3 and Table S1,
Supporting Information. The working principle and the picture depicting the TFTs on the graded composite substrate are
shown in Figure 3a. Since the chemical and physical properties prevent a direct fabrication of oxide electronic devices on
the composite substrate, but a permanent connection between
the graded patches and the devices is required, a 60 µm-thick
adhesive (467MP 200MP, 3M) was placed underneath the TFT
membrane. This adhesive is one order of magnitude thinner
than the ≈700 µm thick composite. The TFT characteristics
and the evolution of the performance parameters measured
while applying a uniaxial global deformation of up to 120%
are shown in Figure 3b–d. Here the ratio between stiff and soft
areas of the composite was 1:6. More extensive elongation of
the substrate caused strains greater than 1% on the mechanically graded patches,[23] leading to the formation of cracks and,
therefore, failure of the electronic devices. Similar to the reliability measurements of wavy electronics, the TFTs on the composite substrate have been repeatedly stretched (strain: 70%)
and relaxed. The automated custom-build stretching tester,
which performed up to 4000 stretching cycles within a 65 h
time window and the measured parameter shifts are shown
in Figure S4, Supporting Information. The TFTs stay fully
Figure 3. a) Visualization and micrograph of electronic devices on a stretched substrate. Due to the local increase of the elastic modulus and to the
good interfacial adhesion between the different layers, the effective strain in the devices is always <1%.[23] Transfer b) and output c) characteristics
of a TFT measured while stretched by up to 120% (the graded patches occupied ≈15% of the relaxed sample). d) Performance parameter variation
during stretching: VTH shifted by <250 mV and µ varied by 37%. e) Demonstration of conformable electronics using a biomedical device as illustrative example: A 2D composite substrate was wrapped around an artificial hip joint (radius: 14 mm). Here, the graded patches were protected by an
additional 100 µm-thick polypropylene layer (Figure S5, Supporting Information). f) Wrapping the electronics around the hip joint chances VTH and µ
by 2 mV and 4%, respectively.
1400038 (4 of 7)
wileyonlinelibrary.com
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Adv. Electron. Mater. 2015, 1, 1400038
www.MaterialsViews.com
www.advelectronicmat.de
by this sensor, close to the sensor location itself, and a power
supply system.
While there are already a number of stretchable sensors
available, e.g., for pressure or magnetic fields,[6,25] we demonstrate a stretchable strain sensor based on metal coated PDMS
(Figure 4b). The sensor is able to reversibly measure strain up
to 10% by the reversible formation of cracks in the conductive
Au coating of a free-standing 100-µm thick PDMS substrate.
Here a strain resolution of 1% is demonstrated.
A common source amplifier circuit on the elastic 2D composite substrate (Figure 4c) exhibited a gain of ≈9 dB and unity
gain frequency of ≈300 kHz. These parameters are nearly unaffected by the deformation of the substrate necessary to conform
the electronics to a spherical structure with a radius of 14 mm
(artificial hip joint) shown in Figure 4d. The common source
amplifier can be used to amplify sensor signals and proves the
possibility to successfully realize stretchable sensor readout and
transceiver circuits with the presented technology.
Finally, electronic systems have to be energy self-sufficient
which requires a preferably wireless power transmission
system.[33] Therefore, a stretchable integrated rectifier circuit
was composed of 4 p/n diodes in a bridge configuration. This
is the first time a flexible rectifier circuit is made from oxide
pn-diodes. The diodes are fabricated using IGZO as n-type
semiconductor and NiO as p-type semiconductor (Figure S6,
Supporting Information).[34] This rectifier is used to realize a
Figure 4. a) General scheme for a stretchable electronic system. b) Stretchable PDMS based resistive strain sensor. The sensor reliably measures
strain up to 10%. c–e) Conformable elastic integrated circuits for sensor read out and power transmission on a 2D composite substrate wrapped
around an artificial hip joint. c) Schematic, operation voltages, and picture of an elastic common source amplifier. d) Bode plot of the stretched amplifier. The deformation changes the gain-bandwidth product from 852 kHz (relaxed) to 820 kHz (strained). e) Wireless energy transmission system to
power stretchable electronics: a source coil with a peak-to-peak input voltage Vpp of 12 V inductively transmits power to and a receiver coil (tuned to
resonance by a 175 nF capacitor) using a frequency of 125 kHz. The shown thin-film rectifier circuit connected to the receiver coil is used to generate
a DC voltage on the elastic 2D composite. The transmitted DC voltage of 2.1 V, and the transmitted power was 450 µW is not affected by stretching.
Adv. Electron. Mater. 2015, 1, 1400038
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
wileyonlinelibrary.com
(5 of 7) 1400038
COMMUNICATION
functional after this long-term cycling test and exhibit variations of the threshold voltage and mobility of 170 mV and 20%,
respectively.
In a next step, the presented concept was extended to a 2D
substrate (Figure 3e). 2D elastic electronics can be used to
realize conformal electronic devices which can be wrapped
around objects. Here, a spherical artificial hip joint with a
radius of 14 mm was conformably covered with electronic
devices. Since this deformation induces strain >120%, the electronic devices were not directly attached to the graded patches
but an additional 100 µm-thick polypropylene layer was placed
between the TFT membrane and the elastic substrate. This
additional layer increases the stretchability because the load
transmission between parylene membrane and polypropylene
is smaller than the load transmission to the parylene membrane directly glued to the composite substrate. The polypropylene layer protective layer enables elongations up to the substrate elasticity limit of 300% with only very little variations of
the TFT performance parameters (Figure S5, Supporting Information). Consequently, the devices are virtually not affected
from being wrapped around the hip joint (Figure 3f).
The functionality of single stretchable devices opens the way
to conformable systems. Figure 4 presents the basic building
blocks of such a system. The general structure of a stretchable
sensing system is shown in Figure 4a. The key requirements
are a sensor, the ability to amplify the analog signals generated
www.MaterialsViews.com
COMMUNICATION
www.advelectronicmat.de
stretchable, wireless power transmission system, and to supply
energy to the elastic electronics conformed to the artificial hip
joint. The energy is transmitted using two inductively coupled
coils connected to the AC input of the elastic rectifier (Figure 4e).
A source coil with a diameter of 8 cm and a receiver coil with
a diameter of 4 cm (both fabricated using ten windings of
0.06 mm2 Cu wire) were used. To minimize the energy
absorbed by tissue, the system uses a carrier frequency of
125 kHz.[35] The demonstrated transmitted power of 450 µW is
sufficient to operate circuits based on IGZO TFTs.[30]
A potential application of the shown components is the strain
based measurement of the body posture[36] using conformable
strain sensing tags directly attached to the human body.
While the stiff island approach has not been further developed here to enable connection between electronic components on different islands, numerous methods have been proposed to fabricate passive electrical interconnections on elastic
substrates. Examples are CNTs,[14] air bridge structures,[15,37]
horseshoe meander interconnects,[38] wavy metal lines,[39] or
free floating interconnects.[10] A combination of stretchable conductive lines and active elements on graded islands can led to
more complex stretchable systems in the future.
In summary, two different techniques for the fabrication of
stretchable electronics based on high performance inorganic
materials are presented. Oxide semiconductor based devices
in a wavy layout as well as on a locally reinforced elastic composite substrate can be stretched by more than 200%. The
subsequent expansion of the locally reinforced composite substrate approach into two dimensions led to the realization of
conformable electronics that can be wrapped around any 3D
shaped surfaces, such as an artificial hip joint. Wavy electronics
at the same time mimic the wrinkling behavior of human skin
and demonstrates the feasibility to combine soft biological
systems with electronic functionality. Stretchable electronic
components, in particular a strain sensor, an amplifier circuit for sensor read-out, and a wireless power transmission
system, represent the basic building blocks of every stretchable
sensor system and demonstrate the electrical performance and
possible complexity of the proposed approach. All in all, the
possibility to transform electronic devices made from brittle
materials into a stretchable and conformal system proves the
potential of the presented technology for smart skins and functionalized medical implants.
Experimental Section
Device Fabrication: The fabrication of IGZO TFT is described in
ref. [8]. For the fabrication of diodes 5 nm Cr, 25 nm Cu, and 5 nm Ti
were evaporated and structured into anode contacts. A 50 nm thick
layer of IGZO was used n-type semiconductor. As p-type semiconductor
50 nm of NiO was DC sputtered at room temperature using a metallic
Ni target and a 50% Ar, 50% O2 atmosphere. The fabrication was
finished by the deposition of 10 nm Ti and 75 nm Au as cathode contact.
The stretchable PDMS based strain sensors were fabricated by replacing
the 1 µm-thin parylene layer by 100 µm of spin coated PDMS. Afterwards
an O2 plasma and 10 nm Ti were used to improve the adhesion of a
60 nm-thick evaporated Au layer. After fabrication and release, the PDMS
strain sensors were cut to a size of 4 × 35 mm2.
Transfer of Electronics to Stretchable Substrates: The fully manufactured
sample was placed in water (floating). Within 120 min the water dissolved
1400038 (6 of 7)
wileyonlinelibrary.com
a sacrificial PVA layer underneath the parylene/PDMS membrane
and released the membrane with the electronic devices (Figure S1,
Supporting Information). The stretchable composite substrates with
mechanically graded patches were fabricated by solvent welding layers
of polyurethane-based materials reinforced at progressively larger
length scales. The elastic moduli of these materials are adjusted by the
concentration of polyurethane hard domains at the molecular scale,
laponite, and alumina platelets at the nano- and microscale (Table S1,
Supporting Information).[23,40]
Characterization: Devices were characterized with probe tips
under ambient condition using an Agilent B1500A. Sensors and TFTs
were stretched using a custom-build stretching tester (Figure S4,
Supporting Information). Performance parameters were extrapolated
using the Shichman–Hodges model of the TFT current.[41] Circuits
were characterized using an Agilent 33522A waveform generator and
an Agilent MSO-X-3034A oscilloscope. Amplifier measurements were
performed using a load of 1 MΩ and 2 pF. Mechanical strain in the
devices was calculated according to ref. [8].
Supporting Information
Supporting Information is available from the Wiley Online Library or
from the author.
Acknowledgements
This work was supported by the European Commission through the
FP7 Project “flexible multifunctional bendable integrated light-weight
ultrathin systems” under contract no. FP7-287568.
Received: December 1, 2014
Revised: January 1, 2015
Published online: February 13, 2015
[1] A. Nathan, A. Ahnood, M. T. Cole, S. Lee, Y. Suzuki, P. Hiralal,
F. Bonaccorso, T. Hasan, L. Garcia-Gancedo, A. Dyadyusha,
S. Haque, P. Andrew, S. Hofmann, J. Moultrie, D. P. Chu,
A. J. Flewitt, A. C. Ferrari, M. J. Kelly, J. Robertson,
G. A. J. Amaratunga, W. I. Milne, Proc. IEEE 2012, 100, 1486.
[2] K. Cherenack, C. Zysset, T. Kinkeldei, N. Münzenrieder, G. Tröster,
Adv. Mater. 2010, 22, 5178.
[3] a) Y. Y. Hsu, J. Hoffman, R. Ghaffari, B. Ives, P. H. Wei, L. Klinker,
B. Morey, B. Elolampi, D. Davis, C. Rafferty, K. Dowling, presented
at 7th Int. Microsystems, Packaging, Assembly and Circuits Technology Conf., Taipei, October 2012; b) H. Yung-Yu, C. Papakyrikos,
M. Raj, M. Dalal, W. Pinghung, W. Xianyan, G. Huppert, B. Morey,
R. Ghaffari, presented at 64th IEEE Electronic Components and
Technology Conf. Orlando, May 2014.
[4] R. F. Service, Science 1997, 278, 383.
[5] E. Y. Ma, S. Wagner, Appl. Phys. Lett. 1999, 74, 2661.
[6] M. Kaltenbrunner, T. Sekitani, J. Reeder, T. Yokota, K. Kuribara,
T. Tokuhara, M. Drack, R. Schwodiauer, I. Graz, S. Bauer-Gogonea,
S. Bauer, T. Someya, Nature 2013, 499, 458.
[7] T. Sekitani, U. Zschieschang, H. Klauk, T. Someya, Nat. Mater.
2010, 9, 1015.
[8] G. A. Salvatore, N. Münzenrieder, T. Kinkeldei, L. Petti,
C. Zysset, I. Strebel, L. Büthe, G. Tröster, Nat. Commun. 2014, 5,
2982.
[9] T. Sekitani, T. Someya, MRS Bull. 2012, 37, 236.
[10] S. Xu, Y. H. Zhang, L. Jia, K. E. Mathewson, K. I. Jang, J. Kim,
H. R. Fu, X. Huang, P. Chava, R. H. Wang, S. Bhole, L. Z. Wang,
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Adv. Electron. Mater. 2015, 1, 1400038
www.MaterialsViews.com
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
Y. J. Na, Y. Guan, M. Flavin, Z. S. Han, Y. G. Huang, J. A. Rogers,
Science 2014, 344, 70.
a) Y. W. Su, Z. J. Liu, S. D. Wang, R. Ghaffari, D. H. Kim,
K. C. Hwang, J. A. Rogers, Y. G. Huang, Int. J. Solids Struct. 2014,
51, 1555; b) J. Reeder, M. Kaltenbrunner, T. Ware, D. ArreagaSalas, A. Avendano-Bolivar, T. Yokota, Y. Inoue, M. Sekino, W. Voit,
T. Sekitani, T. Someya, Adv. Mater. 2014, 26, 4967.
S. Bauer, Nat. Mater. 2013, 12, 871.
F. Axisa, D. Brosteaux, E. De Leersnyder, F. Bossuyt, J. Vanfleteren,
B. Hermans, R. Puers, in Proc. Engineering in Medicine and Biology
Society, IEEE, Piscataway, NJ 2007, 5687.
T. Sekitani, H. Nakajima, H. Maeda, T. Fukushima, T. Aida, K. Hata,
T. Someya, Nat. Mater. 2009, 8, 494.
D. Y. Khang, J. A. Rogers, H. H. Lee, Adv. Funct. Mater. 2009, 19,
1526.
S. P. Lacour, J. Jones, S. Wagner, T. Li, Z. G. Suo, Proc. IEEE 2005,
93, 1459.
K. L. Lin, K. Jain, IEEE Electron Device Lett. 2009, 30, 14.
G. S. Jeong, D. H. Baek, H. C. Jung, J. H. Song, J. H. Moon,
S. W. Hong, I. Y. Kim, S. H. Lee, Nat. Commun. 2012, 3, 977.
B. K. Sharma, B. Jang, J. E. Lee, S. H. Bae, T. W. Kim, H. J. Lee,
J. H. Kim, J. H. Ahn, Adv. Funct. Mater. 2013, 23, 2024.
D. H. Kim, J. A. Rogers, Adv. Mater. 2008, 20, 4887.
D. Y. Khang, H. Q. Jiang, Y. Huang, J. A. Rogers, Science 2006, 311, 208.
a) S. P. Lacour, I. Graz, D. Cotton, S. Bauer, S. Wagner, in Proc.
Ann. Int. Eng. Med. Biol. IEEE EMBS, Boston, IEEE, Piscataway, NJ
2011, 8373; b) A. Romeo, Q. Liu, Z. Suo, S. P. Lacour, Appl. Phys.
Lett. 2013, 102, 131904; c) K. Park, D. K. Lee, B. S. Kim, H. Jeon,
N. E. Lee, D. Whang, H. J. Lee, Y. J. Kim, J. H. Ahn, Adv. Funct.
Mater. 2010, 20, 3577.
R. Libanori, R. M. Erb, A. Reiser, H. Le Ferrand, M. J. Suess,
R. Spolenak, A. R. Studart, Nat. Commun. 2012, 3, 1265.
J. A. Rogers, MRS Bull. 2014, 39, 549.
M. Melzer, G. G. Lin, D. Makarov, O. G. Schmidt, Adv. Mater. 2012,
24, 6468.
M. S. White, M. Kaltenbrunner, E. D. Glowacki, K. Gutnichenko,
G. Kettlgruber, I. Graz, S. Aazou, C. Ulbricht, D. A. M. Egbe,
M. C. Miron, Z. Major, M. C. Scharber, T. Sekitani, T. Someya,
S. Bauer, N. S. Sariciftci, Nat. Photonics 2013, 7, 811.
Adv. Electron. Mater. 2015, 1, 1400038
[27] P. I. Hsu, H. Gleskova, M. Huang, Z. Suo, S. Wagner, J. C. Sturm,
J. Non-Cryst. Solids 2002, 299, 1355.
[28] R. M. Erb, K. H. Cherenack, R. E. Stahel, R. Libanori, T. Kinkeldei,
N. Münzenrieder, G. Tröster, A. R. Studart, ACS Appl. Mater. Inter.
2012, 4, 2860.
[29] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono,
Nature 2004, 432, 488.
[30] N. Münzenrieder, L. Petti, C. Zysset, G. A. Salvatore, T. Kinkeldei,
C. Perumal, C. Carta, F. Ellinger, G. Tröster, in Proc. IEEE Int. Electron
Devices Meeting, IEEE, Piscataway, NJ 2012, 5.2.1.
[31] N. Münzenrieder, L. Petti, C. Zysset, D. Görk, L. Büthe,
G. A. Salvatore, G. Tröster, in Proc. European Solid-State Development and Research Conf., IEEE, Piscataway, NJ 2013, 362.
[32] a) P. Barquinha, L. Pereira, G. Goncalves, R. Martins, E. Fortunato,
Electrochem. Solid-State Lett. 2008, 11, H248; b) F. Ante, D. Kalblein,
T. Zaki, U. Zschieschang, K. Takimiya, M. Ikeda, T. Sekitani,
T. Someya, J. N. Burghartz, K. Kern, H. Klauk, Small 2012, 8, 73;
c) K. H. Cherenack, A. Z. Kattamis, B. Hekmashoar, J. C. Sturm,
S. Wagner, J. Korean Phys. Soc. 2009, 54, 415.
[33] T. Sekitani, M. Takamiya, Y. Noguchi, S. Nakano, Y. Kato, T. Sakurai,
T. Someya, Nat. Mater. 2007, 6, 413.
[34] N. Münzenrieder, C. Zysset, L. Petti, T. Kinkeldei, G. A. Salvatore,
G. Tröster, Solid-State Electron 2013, 87, 17.
[35] W. Peijun, T. Yina, G. Kunling, W. Guoxing, D. Simin, S. Guofang,
R. Yuefeng, L. Jingquan, presented at 4th Int. Conf. Biomedical
Engineering and Biotechnology, Shanghai, October 2011.
[36] C. Mattmann, O. Amft, H. Harms, G. Troster, presented at 11th
IEEE Symp. Wearable Computers, Boston, October 2007.
[37] J. Song, Y. Huang, J. Xiao, S. Wang, K. C. Hwang, H. C. Ko,
D. H. Kim, M. P. Stoykovich, J. A. Rogers, J. Appl. Phys. 2009, 105,
123516.
[38] M. Gonzalez, F. Axisa, M. V. BuIcke, D. Brosteaux, B. Vandevelde,
J. Vanfleteren, Microelectron. Reliab. 2008, 48, 825.
[39] J. Jones, S. P. Lacour, S. Wagner, Z. G. Suo, J. Vac. Sci. Technol. A
2004, 22, 1723.
[40] R. Libanori, F. H. L. Munch, D. M. Montenegro, A. R. Studart,
Compos. Sci. Technol. 2012, 72, 435.
[41] S. M. Sze, K. K. Ng, Physics of Semiconductor Devices, John Wiley and
Sons, Hoboken, NJ 2007.
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
wileyonlinelibrary.com
(7 of 7) 1400038
COMMUNICATION
[11]
www.advelectronicmat.de