Mohamed T Ghoneim
Intel Corporation, PhD, Department Member
We s how the effectiveness of wavy channel architecture for thin film transistor application for increased output current. This specific architecture allows increased width of the device by adopting a corrugated shape of the substrate... more
We s how the effectiveness of wavy channel architecture for thin film transistor application for increased output current. This specific architecture allows increased width of the device by adopting a corrugated shape of the substrate without any further real estate penalty. The performance improvement is attributed not only to the increased transistor width, but also to enhanced applied electric field in the channel due to the wavy architecture.
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We s how the effectiveness of wavy channel architecture for thin film transistor application for increased output current. This specific architecture allows increased width of the device by adopting a corrugated shape of the substrate... more
We s how the effectiveness of wavy channel architecture for thin film transistor application for increased output current. This specific architecture allows increased width of the device by adopting a corrugated shape of the substrate without any further real estate penalty. The performance improvement is attributed not only to the increased transistor width, but also to enhanced applied electric field in the channel due to the wavy architecture.
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Solid-state Memory on Flexible Silicon for Future Electronic Applications Mohamed Tarek Ghoneim Advancements in electronics research triggered a vision of a more connected world, touching new unprecedented fields to improve the quality of... more
Solid-state Memory on Flexible Silicon for Future Electronic Applications Mohamed Tarek Ghoneim Advancements in electronics research triggered a vision of a more connected world, touching new unprecedented fields to improve the quality of our lives. This vision has been fueled by electronic giants showcasing flexible displays for the first time in consumer electronics symposiums. Since then, the scientific and research communities partook on exploring possibilities for making flexible electronics. Decades of research have revealed many routes to flexible electronics, lots of opportunities and challenges. In this work, we focus on our contributions towards realizing a complimentary approach to flexible inorganic high performance electronic memories on silicon. This approach provides a straight forward method for capitalizing on the existing well-established semiconductor infrastructure, standard processes and procedures, and collective knowledge. Ultimately, we focus on understanding...
Research Interests: Microelectronics And Semiconductor Engineering, Materials Science, Microelectronics, Electronics, Memory Studies, and 12 moreSemiconductor Devices, Microelectronic Reliability, Memory, Ferroelectrics, Memristor, Microfabrication, Reliability, Non-Volatile Memory Technologies, Flexible Electronics, Weibull distribution, FeRAM, and Nano Fabrication
Solid-state Memory on Flexible Silicon for Future Electronic Applications Mohamed Tarek Ghoneim Advancements in electronics research triggered a vision of a more connected world, touching new unprecedented fields to improve the quality of... more
Solid-state Memory on Flexible Silicon for Future Electronic Applications Mohamed Tarek Ghoneim Advancements in electronics research triggered a vision of a more connected world, touching new unprecedented fields to improve the quality of our lives. This vision has been fueled by electronic giants showcasing flexible displays for the first time in consumer electronics symposiums. Since then, the scientific and research communities partook on exploring possibilities for making flexible electronics. Decades of research have revealed many routes to flexible electronics, lots of opportunities and challenges. In this work, we focus on our contributions towards realizing a complimentary approach to flexible inorganic high performance electronic memories on silicon. This approach provides a straight forward method for capitalizing on the existing well-established semiconductor infrastructure, standard processes and procedures, and collective knowledge. Ultimately, we focus on understanding...
Research Interests: Microelectronics And Semiconductor Engineering, Materials Science, Microelectronics, Electronics, Memory Studies, and 12 moreSemiconductor Devices, Microelectronic Reliability, Memory, Ferroelectrics, Memristor, Microfabrication, Reliability, Non-Volatile Memory Technologies, Flexible Electronics, Weibull distribution, FeRAM, and Nano Fabrication
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Research Interests: Chemical Engineering, Chemistry, Health Sciences, Chemical Education, Biomedical Engineering, and 15 moreElectrochemistry, Electronics, Health, Electrochemical Sensors, Field effect transistors, Medicine, Literature Review, Blood, Biomedical Sciences, Health monitoring, CHEMICAL SCIENCES, Chemical sensors, Acetic Acid, EGFETs, and chemical review
Research Interests: Chemical Engineering, Chemistry, Health Sciences, Chemical Education, Biomedical Engineering, and 15 moreElectrochemistry, Electronics, Health, Electrochemical Sensors, Field effect transistors, Medicine, Literature Review, Blood, Biomedical Sciences, Health monitoring, CHEMICAL SCIENCES, Chemical sensors, Acetic Acid, EGFETs, and chemical review
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A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible,... more
A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems.
Research Interests: Materials Science, Hybrid Systems, Electronics, Packaging, Nanotechnology, and 15 moreMedicine, Multidisciplinary, MEMS sensor, Ionic Liquids, Deep excavation and urban tunnelling, Pierre Drieu La Rochelle, Masks, Microfabrication, Plasma, Plasma Etching, Hieronymus Bosch, Flexible Electronics, Etching, Flexible Manufacturing Systems, and Dicing
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Research Interests: Mechanical Engineering, Materials Science, Nanoelectronics, Nanomaterials, Deformation and strain, and 15 moreNanoelectromechanical Systems, Field effect transistors, CMOS Integrated Circuit Design, Optoelectronics, Microfabrication, FinFets, Characterization, Cmos, Nanomanufacturing, Flexible Electronics, MOSFET, Environmental Nanotechnology, Logic Design, Finfet, and Electrical And Electronic Engineering
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ABSTRACT Neuromorphic computer will need folded architectural form factor to match brain cortex's folded pattern for ultra-compact design. In this work, we show a state-of-the-art CMOS compatible pragmatic fabrication approach of... more
ABSTRACT Neuromorphic computer will need folded architectural form factor to match brain cortex's folded pattern for ultra-compact design. In this work, we show a state-of-the-art CMOS compatible pragmatic fabrication approach of building structurally foldable and densely integrated neuromorphic devices for non-volatile memory applications. We report the first ever memristive devices with the size of a motor neuron on bulk mono-crystalline silicon (100) and then with trench-protect-release-recycle process transform the silicon wafer with devices into a flexible and semi-transparent silicon fabric while recycling the remaining wafer for further use. This process unconditionally offers the ultra-large-scale-integration opportunity - increasingly critical for ultra-compact memory.
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ABSTRACT We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has... more
ABSTRACT We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today's traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world's highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design.
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pH-sensing materials and configurations are rapidly evolving toward exciting new applications, especially those in biomedical applications. In this review, we highlight rapid progress in electrochemical pH sensors over the past decade... more
pH-sensing materials and configurations are rapidly evolving toward exciting new applications, especially those in biomedical applications. In this review, we highlight rapid progress in electrochemical pH sensors over the past decade (2008− 2018) with an emphasis on key considerations, such as materials selection, system configurations, and testing protocols. In addition to recent progress in optical pH sensors, our main focus in this review is on electromechanical pH sensors due to their significant advances, especially in biomedical applications. We summarize developments of electrochemical pH sensors that by virtue of their optimized material chemistries (from metal oxides to polymers) and geometrical features (from thin films to quantum dots) enable their adoption in biomedical applications. We further present an overview of necessary sensing standards and protocols. Standards ensure the establishment of consistent protocols, facilitating collective understanding of results and building on the current state. Furthermore, they enable objective benchmarking of various pH-sensing reports, materials, and systems, which is critical for the overall progression and development of the field. Additionally, we list critical issues in recent literary reporting and suggest various methods for objective benchmarking. pH regulation in the human body and state-of-the-art pH sensors (from ex vivo to in vivo) are compared for suitability in biomedical applications. We conclude our review by (i) identifying challenges that need to be overcome in electrochemical pH sensing and (ii) providing an outlook on future research along with insights, in which the integration of various pH sensors with advanced electronics can provide a new platform for the development of novel technologies for disease diagnostics and prevention. CONTENTS
Research Interests: Chemical Engineering, Health Sciences, Chemical Education, Biomedical Engineering, Electrochemistry, and 14 moreElectronics, Health, Electrochemical Sensors, Field effect transistors, Literature Review, Sensors, Blood, Biomedical Sciences, pH sensors, Health monitoring, Chemical sensors, Acetic Acid, EGFETs, and chemical review
Although significant progress is made in identifying pH sensing materials and device configurations, a standard protocol for benchmarking performance of next-generation pH devices is still lacking. In particular, key properties of... more
Although significant progress is made in identifying pH sensing materials
and device configurations, a standard protocol for benchmarking performance
of next-generation pH devices is still lacking. In particular, key properties of
characterization systems, such as inherent component contributions, time
plots for extended-gate field-effect transistor (EGFET) measurements, and the
input resistance (Rin), often go unreported in studies of pH sensing systems.
These properties strongly influence the characterization system and can lead
to mistaken attribution of properties to the device. In this paper, a series
of essential characterization tests and parameters are reported to evaluate
pH systems, such as the zinc oxide EGFET, in a standardized protocol. This
EGFET ZnO sensor has a sensitivity of −58.1 mV pH−1, drift range from 2.5 to
14.2 µA h−1, and response time of 136 s. By using a ZnO sensing electrode,
it is demonstrated that i) intrinsic contributions of reference electrode and
commercial transistor (for EGFET) are not negligible; ii) time plots for EGFET
configuration and defining a critical point at the onset of drift are essential for
accurate sensitivity, response time, and drift reporting; and iii) the results of
the pH sensing system are strongly dependent on the input resistance of the
used characterization instruments.
and device configurations, a standard protocol for benchmarking performance
of next-generation pH devices is still lacking. In particular, key properties of
characterization systems, such as inherent component contributions, time
plots for extended-gate field-effect transistor (EGFET) measurements, and the
input resistance (Rin), often go unreported in studies of pH sensing systems.
These properties strongly influence the characterization system and can lead
to mistaken attribution of properties to the device. In this paper, a series
of essential characterization tests and parameters are reported to evaluate
pH systems, such as the zinc oxide EGFET, in a standardized protocol. This
EGFET ZnO sensor has a sensitivity of −58.1 mV pH−1, drift range from 2.5 to
14.2 µA h−1, and response time of 136 s. By using a ZnO sensing electrode,
it is demonstrated that i) intrinsic contributions of reference electrode and
commercial transistor (for EGFET) are not negligible; ii) time plots for EGFET
configuration and defining a critical point at the onset of drift are essential for
accurate sensitivity, response time, and drift reporting; and iii) the results of
the pH sensing system are strongly dependent on the input resistance of the
used characterization instruments.
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Research Interests: Plasma Physics, Polymer Chemistry, Hybrid Systems, Packaging, Silicon, and 14 moreMEMS sensor, Ionic Liquids, Deep excavation and urban tunnelling, Pierre Drieu La Rochelle, Masks, Microfabrication, Plasma, Reactive Power, Plasma Etching, Hieronymus Bosch, MEMS design: Sensors and Actuators, Flexible Electronics, Etching, and Dicing
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Advancements in electronics research triggered a vision of a more connected world, touching new unprecedented fields to improve the quality of our lives. This vision has been fueled by electronic giants showcasing flexible displays for... more
Advancements in electronics research triggered a vision of a more connected world, touching new unprecedented fields to improve the quality of our lives. This vision has been fueled by electronic giants showcasing flexible displays for the first time in consumer electronics symposiums. Since then, the scientific and research communities partook on exploring possibilities for making flexible electronics. Decades of research have revealed many routes to flexible electronics, lots of opportunities and challenges. In this work, we focus on our contributions towards realizing a complimentary approach to flexible inorganic high performance electronic memories on silicon. This approach provides a straight forward method for capitalizing on the existing well-established semiconductor infrastructure, standard processes and procedures, and collective knowledge. Ultimately, we focus on understanding the reliability and functionality anomalies in flexible electronics and flexible solid state memory built using the flexible silicon platform. The results of the presented studies show that: (i) flexible devices fabricated using etch-protect-release approach (with trenches included in the active area) exhibit ~19% lower safe operating voltage compared to their bulk counterparts, (ii) they can withstand prolonged bending duration (static stress) but are prone to failure under dynamic stress as in repeated bending and re-flattening, (iii) flexible 3D FinFETs exhibit ~10% variation in key properties when exposed to out-of-plane bending stress and out-of-plane stress does not resemble the well-studied in-plane stress used in strain engineering, (iv) resistive memories can be achieved on flexible silicon and their basic resistive property is preserved but other memory functionalities (retention, endurance, speed, memory window) requires further investigations, (v) flexible silicon based PZT ferroelectric capacitors exhibit record polarization, capacitance, and endurance (1 billion write-erase cycles) values for flexible FeRAMs, uncompromised retention ability under varying dynamic stress, and a minimum bending radius of 5 mm, and (vi) the combined effect of 225 °C, 260 MPa tensile stress, 55% humidity under ambient conditions (21% oxygen), led to 48% reduction in switching coercive fields, 45% reduction in remnant polarization, an expected increase of 22% in relative permittivity and normalized capacitance, and reduced memory window (20% difference between switching and non-switching currents at 225 °C).