Overlap

Résumé -L’’étude du régime alimentaire de deux reptiles a été réalisée dans le parc de l’’institut national agronomique, situé dans la ville d’’Alger. L’’analyse des fèces d’’animaux capturés et mis en contention a permis de mesurer l’’abondance relative des proies consommées, la diversité standardisée et le recouvrement de niches entre ces deux reptiles. Les deux espèces consomment une grande diversité de petits invertébrés et ont un régime alimentaire recouvrant. Malgré cet opportunisme alimentaire, le partage des ressources de ce milieu apparaît obtenu par une séparation spatiale et temporelle du comportement prédateur de chacune de ces espèces prédatrices.
Mots-clés : Lézard ovipare, comportement alimentaire, relation trophique, milieu urbain
Summary - Diet of the wall gecko Tarentola mauritanica (Linné 1758) (Gekkonidae) and the Algerian sand racer Psammodromus algirus (Linné 1758) (Lacertidae) in a suburban environment near Alger city. The diet of both reptiles was studied in the park of the National Agronomic Institute in Alger city. Faeces of the captured animals were analysed in order to evaluate relative abundance of preys, standardised diversity and diet overlaps for both species. They both preyed on a large diversity of small invertebrates and showed overlapping diets. In spite
of this opportunistic behaviour, both predator species seem to split the feeding resources of their environment through spatial and temporal segregation.
Key-words: Oviparous lizard, feeding behavior, trophic relation, suburban environment

In this work an attempt has been made to analyze the scaling limits of Double Gate (DG) underlap and Triple Gate (TG) overlap FinFET structure using 2D and 3D computer simulations respectively. To analyze the scaling limits of FinFET structure, simulations are performed using three variables: finthickness, fin-height and gate-length. From 2D simulation of DG FinFET, it is found that the gate-length (L) and fin-thickness (Tfin) ratio plays a key role while deciding the performance of the device. Drain Induced Barrier Lowering (DIBL) and Subthreshold Swing (SS) increase abruptly when (L/Tfin) ratio goes below 1.5. So, there will be a trade-off in between SCEs and on- current of the device since on-off current ratio is found to be high at small dimensions. From 3D simulation study on TG FinFET, It is found that both fin-thickness (Tfin) and fin-height (Hfin) can control the SCEs. However, Tfin is found to be more dominant parameter than Hfin while deciding the SCEs. DIBL and SS increase as (Leff/Tfin) ratio decreases. The (Leff/Tfin) ratio can be reduced below 1.5 unlike DG FinFET for the same SCEs. However, as this ratio approaches to 1, the SCEs can go beyond acceptable limits for TG FinFET structure. The relative ratio of Hfin and Tfin should be maximum at a given Tfin and Leff to get maximum on-current per unit width. However, increasing Hfin degrades the fin stability and degrades SCEs.