Microelectronics: Circuit Analysis and Design
Microelectronics: Circuit Analysis and Design
Microelectronics: Circuit Analysis and Design
Microelectronics
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 4-1
Microelectronics, 4e
McGraw-Hill
Chapter 4-2
26/1/2012
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 4-3
gm
iD
vGS
id
v gs
g m 2 K n (VGSQ VTN ) 2 K n I DQ
ro ( viDSD ) 1
ro [K n (VGSQ VTN ) 2 ]1 [I DQ ]1
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 4-4
26/1/2012
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 4-5
Small-signal
AC
Av Vo Vi g m (ro RD )
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 4-6
26/1/2012
Problem-Solving Technique:
MOSFET AC Analysis
1. Analyze circuit with only the dc sources to
find quiescent solution. Transistor must be
biased in saturation region for linear
amplifier.
2. Replace elements with small-signal model.
3. Analyze small-signal equivalent circuit,
setting dc sources to zero, to produce the
circuit to the time-varying input signals only.
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 4-7
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 4-8
26/1/2012
Common-Source Configuration
DC analysis:
Coupling capacitor is assumed
to be open.
AC analysis:
Coupling capacitor is assumed
to be a short. DC voltage
supply is set to zero volts.
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 4-9
Av Vo Vi g m (ro RD )(
Neamen
Microelectronics, 4e
McGraw-Hill
Ri
)
Ri RSi
Chapter 4-10
26/1/2012
DC Load Line
Q-point near the middle
of the saturation region
for maximum symmetrical
output voltage swing,.
Microelectronics, 4e
McGraw-Hill
Chapter 4-11
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 4-12
26/1/2012
Av
Neamen
Microelectronics, 4e
McGraw-Hill
g m RD
1 g m RS
Chapter 4-13
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 4-14
26/1/2012
NMOS Source-Follower
or Common Drain Amplifier
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 4-15
Av
Neamen
RS ro
Ri
)
1
R
R
i
Si
RS ro
gm
Microelectronics, 4e
McGraw-Hill
Chapter 4-16
26/1/2012
RO
Neamen
1
RS ro
gm
Microelectronics, 4e
McGraw-Hill
Chapter 4-17
Common-Gate Circuit
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 4-18
26/1/2012
Av
g m ( RD RL )
Ai
1 g m RSi
Neamen
IO
g R
RD
(
)( m Si )
Ii
RD RL 1 g m RSi
Microelectronics, 4e
McGraw-Hill
Chapter 4-19
Voltage
Gain
Common
Source
Av > 1
Source
Follower
Av 1
Common
Gate
Av > 1
Neamen
Current
Gain
__
__
Ai 1
Microelectronics, 4e
McGraw-Hill
Input
Output
Resistance Resistance
RTH
RTH
Low
Moderate
to high
Low
Moderate
to high
Chapter 4-20
10
26/1/2012
NMOS Amplifier
with Enhancement Load Device
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 4-21
NMOS Amplifier
with Depletion Load Device
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Microelectronics, 4e
McGraw-Hill
Chapter 4-22
11
26/1/2012
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 4-23
Av g mn (ron rop )
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 4-24
12
26/1/2012
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 4-25
Cascade Circuit
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Microelectronics, 4e
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Chapter 4-26
13
26/1/2012
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 4-27
Cascode Circuit
with Small-Signal Equivalent
Circuit
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Microelectronics, 4e
McGraw-Hill
Chapter 4-28
14
26/1/2012
Neamen
Microelectronics, 4e
McGraw-Hill
Chapter 4-29
15