Data Sheet: PNP Switching Transistors

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N2905; 2N2905A PNP switching transistors

Product specication Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28
Philips Semiconductors
Product specication
PNP switching transistors

FEATURES High current (max. 600 mA) Low voltage (max. 60 V). APPLICATIONS High-speed switching Driver applications for industrial service.
1 handbook, halfpage
2N2905; 2N2905A
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION
DESCRIPTION PNP switching transistor in a TO-39 metal package. NPN complements: 2N2219 and 2N2219A.
3
2 2
MAM318
Fig.1
Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER collector-base voltage collector-emitter voltage 2N2905 2N2905A IC Ptot hFE fT toff collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb 25 C IC = 150 mA; VCE = 10 V IC = 50 mA; VCE = 20 V; f = 100 MHz ICon = 150 mA; IBon = 15 mA; IBoff = 15 mA open emitter open base 100 200 40 60 600 600 300 300 MHz ns V V mA mW CONDITIONS MIN. MAX. 60 V UNIT
1997 May 28
Product specication

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage collector-emitter voltage 2N2905 2N2905A VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C Tcase 25 C open collector CONDITIONS open emitter open base
2N2905; 2N2905A
MIN. 65 65
MAX. 60 40 60 5 600 800 200 600 3 +150 200 +150 V V V V
UNIT
mA mA mA mW W C C C
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 292 58 UNIT K/W K/W
1997 May 28
Product specication

CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO PARAMETER collector cut-off current 2N2905 ICBO collector cut-off current 2N2905A IEBO hFE emitter cut-off current DC current gain 2N2905 IE = 0; VCB = 50 V IE = 0; VCB = 50 V; Tamb = 150 C IC = 0; VEB = 5 V VCE = 10 V IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 150 mA; note 1 IC = 500 mA; note 1 hFE DC current gain 2N2905A VCE = 10 V IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 150 mA; note 1 IC = 500 mA; note 1 VCEsat VBEsat Cc Ce fT collector-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 base-emitter saturation voltage collector capacitance emitter capacitance transition frequency IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 2 V; f = 1 MHz IE = 0; VCB = 50 V IE = 0; VCB = 50 V; Tamb = 150 C CONDITIONS
2N2905; 2N2905A
MIN. 35 50 75 100 30 75 100 100 100 50 200
MAX. 20 20 10 10 50 300 300 400 1.6 1.3 2.6 8 30
UNIT nA A nA A nA
mV V V V pF pF MHz
IC = 50 mA; VCE = 20 V; f = 100 MHz; note 1 ICon = 150 mA; IBon = 15 mA; IBoff = 15 mA
Switching times (between 10% and 90% levels); see Fig.2 ton td tr toff ts tf Note 1. Pulse test: tp 300 s; 0.02. turn-on time delay time rise time turn-off time storage time fall time 45 15 35 300 250 50 ns ns ns ns ns ns
1997 May 28
Product specication
2N2905; 2N2905A
ndbook, full pagewidth
VBB
VCC
RB (probe) oscilloscope 450 Vi R1 R2
RC Vo (probe) 450 DUT oscilloscope
MGD624
Vi = 9.5 V; T = 500 s; tp = 10 s; tr = tf 3 ns. R1 = 68 ; R2 = 325 s; RB = 325 ; RC = 160 . VBB = 3.5 V; VCC = 29.5 V. Oscilloscope input impedance Zi = 50 .
Fig.2 Test circuit for switching times.
1997 May 28
Product specication

PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads
2N2905; 2N2905A
SOT5/11
j B
seating plane w M A M B M
1
b
2 3
D1
a A D A L
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 6.60 6.35 a 5.08 b D D1 j k L 14.2 12.7 w 0.2 45
0.48 9.39 8.33 0.85 0.95 0.41 9.08 8.18 0.75 0.75
OUTLINE VERSION SOT5/11
REFERENCES IEC JEDEC TO-39 EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-11
1997 May 28
Product specication

DEFINITIONS Data sheet status Objective specication Preliminary specication Product specication Limiting values
2N2905; 2N2905A
This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 May 28
Philips Semiconductors a worldwide company

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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 May 28
Document order number:
9397 750 02235

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DISCRETE SEMICONDUCTORS

2N2905; 2N2905A PNP switching transistors

PNP switching transistors

Simplified outline (TO-39) and symbol.

PNP switching transistors

MAX. 60 40 60 5 600 800 200 600 3 +150 200 +150 V V V V

PNP switching transistors

MIN. 35 50 75 100 30 75 100 100 100 50 200

MAX. 20 20 10 10 50 300 300 400 1.6 1.3 2.6 8 30

PNP switching transistors

ndbook, full pagewidth

RB (probe) oscilloscope 450 Vi R1 R2

RC Vo (probe) 450 DUT oscilloscope

Fig.2 Test circuit for switching times.

PNP switching transistors

OUTLINE VERSION SOT5/11

REFERENCES IEC JEDEC TO-39 EIAJ

ISSUE DATE 97-04-11

PNP switching transistors

Philips Semiconductors a worldwide company

Printed in The Netherlands

Date of release: 1997 May 28

Document order number:

9397 750 02235

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