BC109

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
BC107; BC108; BC109

NPN general purpose transistors
Product specification
Supersedes data of 1997 Jun 03
File under Discrete Semiconductors, SC04
1997 Sep 03
Philips Semiconductors
BC107; BC108; BC109
FEATURES
PINNING
Low current (max. 100 mA)
PIN
Low voltage (max. 45 V).

APPLICATIONS
DESCRIPTION
emitter
base
collector, connected to the case
General purpose switching and amplification.

DESCRIPTION
handbook, halfpage
1
NPN transistor in a TO-18; SOT18 metal package.

PNP complement: BC177.
2
3
MAM264
Fig.1
Simplified outline (TO-18; SOT18)

and symbol.
QUICK REFERENCE DATA

SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
UNIT
BC107
50
BC108; BC109
30
BC107
45
BC108; BC109
20
200
mA
300
mW
BC107
110
450
BC108
110
800
BC109
200
800
100
collector-emitter voltage
open base
peak collector current
Ptot
total power dissipation
Tamb 25 C
hFE
DC current gain
IC = 2 mA; VCE = 5 V
transition frequency
1997 Sep 03
MAX.
open emitter
ICM
fT
MIN.
IC = 10 mA; VCE = 5 V; f = 100 MHz
MHz
BC107; BC108; BC109
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BC107
50
BC108; BC109
30
BC107
45
BC108; BC109
20
BC107
BC108; BC109
collector-emitter voltage
emitter-base voltage
open base
open collector
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
300
mW
Tstg
storage temperature
65
+150
Tj
junction temperature
175
Tamb
operating ambient temperature
65
+150
Tamb 25 C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Rth j-c
thermal resistance from junction to case
CONDITIONS
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Sep 03
VALUE
UNIT
0.5
K/mW
0.2
K/mW
BC107; BC108; BC109
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
15
nA
IE = 0; VCB = 20 V; Tj = 150 C
15
IC = 0; VEB = 5 V
50
nA
BC107A; BC108A
90
BC107B; BC108B; BC109B
40
150
BC108C; BC109C
100
270
BC107A; BC108A
110
180
220
BC107B; BC108B; BC109B
200
290
450
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
IC = 10 A; VCE = 5 V
DC current gain
IC = 2 mA; VCE = 5 V
BC108C; BC109C
VCEsat
TYP.
IE = 0; VCB = 20 V
ICBO
hFE
MIN.
420
520
800
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
90
250
mV
IC = 100 mA; IB = 5 mA
200
600
mV
IC = 10 mA; IB = 0.5 mA; note 1
700
mV
IC = 100 mA; IB = 5 mA; note 1
900
mV
IC = 2 mA; VCE = 5 V; note 2
550
620
700
mV
IC = 10 mA; VCE = 5 V; note 2
770
mV
VBEsat
base-emitter saturation voltage
VBE
base-emitter voltage
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
2.5
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
pF
fT
transition frequency
IC = 10 mA; VCB = 5 V; f = 100 MHz
100
MHz
noise figure
IC = 200 A; VCE = 5 V; RS = 2 k;
f = 30 Hz to 15.7 kHz
dB
IC = 200 A; VCE = 5 V; RS = 2 k;
f = 1 kHz; B = 200 Hz
10
dB
dB
BC109B; BC109C
F
noise figure
BC107A; BC108A
BC107B; BC108B; BC108C
BC109B; BC109C
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
1997 Sep 03
BC107; BC108; BC109
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
seating plane
w M A M B M
D1
2
3
a
D
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
D1
mm
5.31
4.74
2.54
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
0.40
45
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT18/13
B11/C7 type 3
TO-18
1997 Sep 03
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-18
BC107; BC108; BC109
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Sep 03
BC107; BC108; BC109

NOTES
1997 Sep 03
Philips Semiconductors a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstrae 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 So Paulo, SO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117047/00/04/pp8
Date of release: 1997 Sep 03
Document order number:
9397 750 02817

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DISCRETE SEMICONDUCTORS

BC107; BC108; BC109

NPN general purpose transistors

BC107; BC108; BC109

Low current (max. 100 mA)

Low voltage (max. 45 V).

collector, connected to the case

General purpose switching and amplification.

NPN transistor in a TO-18; SOT18 metal package.

Simplified outline (TO-18; SOT18)

QUICK REFERENCE DATA

peak collector current

total power dissipation

IC = 10 mA; VCE = 5 V; f = 100 MHz

NPN general purpose transistors

BC107; BC108; BC109

collector current (DC)

peak collector current

peak base current

total power dissipation

operating ambient temperature

thermal resistance from junction to ambient

thermal resistance from junction to case

NPN general purpose transistors

BC107; BC108; BC109

BC107B; BC108B; BC109B

BC107B; BC108B; BC109B

collector cut-off current

emitter cut-off current

collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA

IC = 10 mA; IB = 0.5 mA; note 1

IC = 100 mA; IB = 5 mA; note 1

IC = 2 mA; VCE = 5 V; note 2

IC = 10 mA; VCE = 5 V; note 2

base-emitter saturation voltage

IC = ic = 0; VEB = 0.5 V; f = 1 MHz

IC = 10 mA; VCB = 5 V; f = 100 MHz

NPN general purpose transistors

BC107; BC108; BC109

NPN general purpose transistors

BC107; BC108; BC109

This data sheet contains final product specifications.

NPN general purpose transistors

BC107; BC108; BC109

Philips Semiconductors a worldwide company

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Philips Electronics N.V. 1997

Printed in The Netherlands

Date of release: 1997 Sep 03

Document order number:

9397 750 02817

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