DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

1N4150; 1N4151 High-speed diodes

Product specication Supersedes data of 1996 Sep 03 1999 Jun 01

Philips Semiconductors

Product specication

High-speed diodes
FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 4 ns General application Continuous reverse voltage: max. 50 V Repetitive peak reverse voltage: max. 75 V Repetitive peak forward current: max. 600 mA and 450 mA respectively.
The marking band indicates the cathode.
handbook, halfpage k

1N4150; 1N4151
DESCRIPTION The 1N4150 and 1N4151 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.

MAM246

APPLICATIONS High-speed switching 1N4150: general purpose use in computer and industrial applications 1N4151: military and industrial applications.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current 1N4150 1N4151 IFRM repetitive peak forward current 1N4150 1N4151 IFSM non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 65 4 1 0.5 500 +200 200 A A A mW C C 600 450 mA mA see Fig.2; note 1 300 200 mA mA CONDITIONS MIN. MAX. 75 50 V V UNIT

1999 Jun 01

Philips Semiconductors

Product specication

High-speed diodes
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specied. SYMBOL VF PARAMETER forward voltage 1N4150 see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA 1N4151 IR reverse current 1N4150 1N4151 IR reverse current 1N4150 1N4151 Cd diode capacitance 1N4150 1N4151 trr reverse recovery time 1N4150 when switched from IF = 10 mA to IR = 1 mA; RL = 100 ; measured at IR = 0.1 mA; see Fig.7 when switched from IF = 10 mA to 200 mA to IR = 10 mA to 200 mA; RL = 100 ; measured at IR = 0.1 IF; see Fig.7 when switched from IF = 200 mA to 400 mA to IR = 200 mA to 400 mA; RL = 100 ; measured at IR = 0.1 IF; see Fig.7 trr reverse recovery time 1N4151 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA to IR = 60 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 tfr forward recovery time when switched to IF = 200 mA; tr = 0.4 ns; measured at VF = 1 V; see Fig.8 f = 1 MHz; VR = 0; see Fig.6 VR = 50 V; Tj = 150 C; see Fig.5 IF = 50 mA VR = 50 V; see Fig.5 CONDITIONS

1N4150; 1N4151

MIN. 540 660 760 820 870

MAX. 620 740 860 920 1000 1000 0.1 0.05 100 50 2.5 2 6 4

UNIT mV mV mV mV mV mV A A A A pF pF ns ns

ns

4 2

ns ns

10

ns

THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. 1999 Jun 01 3 PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 350 UNIT K/W K/W

Philips Semiconductors

Product specication

High-speed diodes
GRAPHICAL DATA
MBG456

1N4150; 1N4151

handbook, halfpage

400

handbook, halfpage

600

MGD291

IF (mA) 300
(1)

IF (mA) 400
(1) (2)

200

(2)

200

100

0 0 100 Tamb (oC) 200

0 0 1 VF (V) 2

Device mounted on an FR4 printed-circuit board; lead length 10 mm. (1) 1N4150. (2) 1N4151.

(1) Tj = 175 C; typical values. (2) Tj = 25 C; typical values.

Fig.2

Maximum permissible continuous forward current as a function of ambient temperature.

Fig.3

Forward current as a function of forward voltage.

102 handbook, full pagewidth IFSM (A)

MBG704

10

101 1 10

102

103

tp (s)

104

Based on square wave currents. Tj = 25 C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1999 Jun 01

Philips Semiconductors

Product specication

High-speed diodes

1N4150; 1N4151

103 handbook, halfpage IR (A)

MGD290

MGD004

handbook, halfpage

1.2

10

Cd (pF) 1.0
(1) (2)

10 0.8 1

101

0.6

102 0 100 Tj (oC) 200

0.4 0 10 VR (V) 20

(1) VR = 75 V; typical values. (2) VR = 20 V; typical values.

f = 1 MHz; Tj = 25 C.

Fig.5

Reverse current as a function of junction temperature.

Fig.6

Diode capacitance as a function of reverse voltage; typical values.

1999 Jun 01

Philips Semiconductors

Product specication

High-speed diodes

1N4150; 1N4151

handbook, full pagewidth

tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90%

tp t

RS = 50 V = VR I F x R S

IF

IF

t rr t

(1)

MGA881

input signal

output signal

(1) The value of IR is dependent on product type.

Fig.7 Reverse recovery voltage test circuit and waveforms.

1 k

450

I 90%

1.0 VF (V)

R S = 50

D.U.T.

OSCILLOSCOPE R i = 50 10%
MBH181

Vfr

t tr tp

tfr

input signal

output signal

Input signal: forward pulse rise time tr = 0.4 ns; forward pulse duration tp = 100 ns; duty factor = 0.01.

Fig.8 Forward recovery time test circuit and waveforms.

1999 Jun 01

Philips Semiconductors

Product specication

High-speed diodes
PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads

1N4150; 1N4151

SOD27

(1)

G1

DIMENSIONS (mm are the original dimensions) UNIT mm b max. 0.56 D max. 1.85 G1 max. 4.25 L min. 25.4 0 1 scale 2 mm

Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD27 REFERENCES IEC A24 JEDEC DO-35 EIAJ SC-40 EUROPEAN PROJECTION ISSUE DATE 97-06-09

DEFINITIONS Data Sheet Status Objective specication Preliminary specication Product specication Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.

1999 Jun 01

Philips Semiconductors a worldwide company

Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777

For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Philips Electronics N.V. 1999

Internet: http://www.semiconductors.philips.com

SCA 65

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

115002/03/pp8

Date of release: 1999 Jun 01

Document order number:

9397 750 05882

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.