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DISCRETE SEMICONDUCTORS
DATA SHEET book, halfpage
2N3904 NPN switching transistor Product specification Supersedes data of 1997 Jul 15
1999 Apr 23
Philips Semiconductors
Product specification
NPN switching transistor
FEATURES
1Low current (max. 200 mA)
2Low voltage (max. 40 V). APPLICATIONS High-speed switching. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: 2N3906.
LIMITING VALUES
2N3904 PINNING
PIN
DESCRIPTION
collector
base
emitter
handbook, halfpage1
MAM279
Fig.1
Simplified outline (TO-92; SOT54)
and symbol. V
CBO
In accordance with the Absolute
Maximum Rating System (IEC 134). SYMBOL
CEO
V I
EBO
C PARAMETER
CM
BM collector-base voltage peak base current Note P collector-emitter tot voltagetotal power dissipation T 1. Transistor mounted on an FR4 stg voltage emitter-base storage temperature T printed-circuit board. collector current j (DC) junction temperature
amb current operating ambient temperature
peak collector
1999 Apr 23 2
Philips Semiconductors
Product specification
NPN switching transistor
2N3904
THERMAL CHARACTERISTICS SYMBOL
th j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
note 1
UNIT
250
K/W
Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C. I
SYMBOL
PARAMETER
CONDITIONS IE = 0; VCB = 30 V
CBO
collector cut-off current
EBO
emitter cut-off current
IC = 0; VEB = 6 V
DC current gain
VCE = 1 V; note 1
FE
BEsat
nA
50
nA
IC = 0.1 mA
60
IC = 1 mA
80
100 60 30
300
200
mV
200
mV
850
mV
950
mV
pF
IC = ic = 0; VEB = 500 mV; f = 1 MHz
pF
300
MHz
IC = 100 A; VCE = 5 V; RS = 1 k; f = 10 Hz to 15.7 kHz
dB
collector-emitter saturation voltage IC = 10 mA; IB = 1 mA; note 1
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency noise figure
UNIT
50
IC = 50 mA IC = 100 mA
CEsat
MAX.
IC = 10 mA V
MIN.
IC = 50 mA; IB = 5 mA; note 1
IC = 10 mA; IB = 1 mA; note 1 IC = 50 mA; IB = 5 mA; note 1
IE = ie = 0; VCB = 5 V; f = 1 MHz
IC = 10 mA; VCE = 20 V; f = 100 MHz
Switching times (between 10% and 90% levels); see Fig.2
t
turn-on time
ICon = 10 mA; IBon = 1 mA;
65
ns
td
delay time
IBoff = 1 mA
35
ns
off
rise time turn-off time
35 240
ns ns
storage time
200
ns
fall time
50
ns
on
tr t t
Note 1. Pulse test: tp 300 s; 0.02.
1999 Apr 23
Philips Semiconductors
Product specification
NPN switching transistor
2N3904
RB
RC
BB
(probe) oscilloscope 450
CC
V o
450 oscilloscope
R2
Vi
(probe)
DUT R1 MLB826
Vi = 5 V; T = 500 s; tp = 10 s; tr = tf 3 ns. R1 = 56 ; R2 = 2.5 k; RB = 3.9 k; RC = 270 . VBB = 1.9 V; VCC = 3 V. Oscilloscope input impedance Zi = 50 .
Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54
REFERENCES IEC
EUROPEAN
JEDEC
EIAJ
TO-92
SC-43
ISSUE DATE
PROJECTION 97-02-28
1999 Apr 23
Philips Semiconductors
Product specification
NPN switching transistor
2N3904
DEFINITIONS Data sheet status Objective specification Preliminary specification
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Apr 23
Philips Semiconductors
Product specification
NPN switching transistor
2N3904 NOTES
1999 Apr 23
Philips Semiconductors a worldwide company
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5600 MD EINDHOVEN, The Netherlands, Fax.
+31 40 27 24825 Philips Electronics N.V. 1999
SCA63
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presented in this document does not form part of any quotation or contract, is believed to be accurate and
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Refurbish Antique Telephones for Fun and Hobby: Step by Step Instructions to Take an Old Telephone and Return It to Its Original Working Order. No Electronics or Telephone Knowledge Needed.
Refurbish Antique Telephones for Fun and Hobby: Step by Step Instructions to Take an Old Telephone and Return It to Its Original Working Order. No Electronics or Telephone Knowledge Needed.
