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Data Sheet 2222

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Product specication

Supersedes data of September 1994


File under Discrete Semiconductors, SC04
1997 May 29
DISCRETE SEMICONDUCTORS
2N2222; 2N2222A
NPN switching transistors
M3D125
1997 May 29 2
Philips Semiconductors Product specication
NPN switching transistors 2N2222; 2N2222A
FEATURES
High current (max. 800 mA)
Low voltage (max. 40 V).
APPLICATIONS
Linear amplification and switching.
DESCRIPTION
NPN switching transistor in a TO-18 metal package.
PNP complement: 2N2907A.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 collector, connected to case
Fig.1 Simplified outline (TO-18) and symbol.
handbook, halfpage
MAM264
1
3
2
3
1
2
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
2N2222 60 V
2N2222A 75 V
V
CEO
collector-emitter voltage open base
2N2222 30 V
2N2222A 40 V
I
C
collector current (DC) 800 mA
P
tot
total power dissipation T
amb
25 C 500 mW
h
FE
DC current gain I
C
= 10 mA; V
CE
= 10 V 75
f
T
transition frequency I
C
= 20 mA; V
CE
= 20 V; f = 100 MHz
2N2222 250 MHz
2N2222A 300 MHz
t
off
turn-off time I
Con
= 150 mA; I
Bon
= 15 mA; I
Boff
= 15 mA 250 ns
1997 May 29 3
Philips Semiconductors Product specication
NPN switching transistors 2N2222; 2N2222A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
2N2222 60 V
2N2222A 75 V
V
CEO
collector-emitter voltage open base
2N2222 30 V
2N2222A 40 V
V
EBO
emitter-base voltage open collector
2N2222 5 V
2N2222A 6 V
I
C
collector current (DC) 800 mA
I
CM
peak collector current 800 mA
I
BM
peak base current 200 mA
P
tot
total power dissipation T
amb
25 C 500 mW
T
case
25 C 1.2 W
T
stg
storage temperature 65 +150 C
T
j
junction temperature 200 C
T
amb
operating ambient temperature 65 +150 C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air 350 K/W
R
th j-c
thermal resistance from junction to case 146 K/W
1997 May 29 4
Philips Semiconductors Product specication
NPN switching transistors 2N2222; 2N2222A
CHARACTERISTICS
T
j
= 25 C unless otherwise specied.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current
2N2222 I
E
= 0; V
CB
= 50 V 10 nA
I
E
= 0; V
CB
= 50 V; T
amb
= 150 C 10 A
I
CBO
collector cut-off current
2N2222A I
E
= 0; V
CB
= 60 V 10 nA
I
E
= 0; V
CB
= 60 V; T
amb
= 150 C 10 A
I
EBO
emitter cut-off current I
C
= 0; V
EB
= 3 V 10 nA
h
FE
DC current gain I
C
= 0.1 mA; V
CE
= 10 V 35
I
C
= 1 mA; V
CE
= 10 V 50
I
C
= 10 mA; V
CE
= 10 V 75
I
C
= 150 mA; V
CE
= 1 V; note 1 50
I
C
= 150 mA; V
CE
= 10 V; note 1 100 300
h
FE
DC current gain I
C
= 10 mA; V
CE
= 10 V; T
amb
= 55 C
2N2222A 35
h
FE
DC current gain I
C
= 500 mA; V
CE
= 10 V; note 1
2N2222 30
2N2222A 40
V
CEsat
collector-emitter saturation voltage
2N2222 I
C
= 150 mA; I
B
= 15 mA; note 1 400 mV
I
C
= 500 mA; I
B
= 50 mA; note 1 1.6 V
V
CEsat
collector-emitter saturation voltage
2N2222A I
C
= 150 mA; I
B
= 15 mA; note 1 300 mV
I
C
= 500 mA; I
B
= 50 mA; note 1 1 V
V
BEsat
base-emitter saturation voltage
2N2222 I
C
= 150 mA; I
B
= 15 mA; note 1 1.3 V
I
C
= 500 mA; I
B
= 50 mA; note 1 2.6 V
V
BEsat
base-emitter saturation voltage
2N2222A I
C
= 150 mA; I
B
= 15 mA; note 1 0.6 1.2 V
I
C
= 500 mA; I
B
= 50 mA; note 1 2 V
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz 8 pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
2N2222A 25 pF
f
T
transition frequency I
C
= 20 mA; V
CE
= 20 V; f = 100 MHz
2N2222 250 MHz
2N2222A 300 MHz
F noise gure I
C
= 200 A; V
CE
= 5 V; R
S
= 2 k;
f = 1 kHz; B = 200 Hz
2N2222A 4 dB
1997 May 29 5
Philips Semiconductors Product specication
NPN switching transistors 2N2222; 2N2222A
Note
1. Pulse test: t
p
300 s; 0.02.
Switching times (between 10% and 90% levels); see Fig.2
t
on
turn-on time I
Con
= 150 mA; I
Bon
= 15 mA; I
Boff
= 15 mA 35 ns
t
d
delay time 10 ns
t
r
rise time 25 ns
t
off
turn-off time 250 ns
t
s
storage time 200 ns
t
f
fall time 60 ns
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
i
= 9.5 V; T = 500 s; t
p
= 10 s; t
r
= t
f
3 ns.
R1 = 68 ; R2 = 325 ; R
B
= 325 ; R
C
= 160 .
V
BB
= 3.5 V; V
CC
= 29.5 V.
Oscilloscope input impedance Z
i
= 50 .
ndbook, full pagewidth
R
C
R2
R1
DUT
MLB826
V
o
R
B
(probe)
450
(probe)
450
oscilloscope oscilloscope
V
BB
V
i
V
CC
Fig.2 Test circuit for switching times.
1997 May 29 6
Philips Semiconductors Product specication
NPN switching transistors 2N2222; 2N2222A
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
SOT18/13 TO-18 B11/C7 type 3 97-04-18
a

k
D A L
seating plane
b
D
1
0 5 10 mm
scale
Metal-can cylindrical single-ended package; 3 leads SOT18/13
w A M M B M
A
1
2
3
j
B
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT w
mm
5.31
4.74
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7

0.40 45
A a b D D
1
j k L
2.54
1997 May 29 7
Philips Semiconductors Product specication
NPN switching transistors 2N2222; 2N2222A
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specication This data sheet contains target or goal specications for product development.
Preliminary specication This data sheet contains preliminary data; supplementary data may be published later.
Product specication This data sheet contains nal product specications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specication
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specication.
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1997 SCA54
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Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 May 29 Document order number: 9397 750 02161

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