2N2222A

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
2N2222; 2N2222A
NPN switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 29
Philips Semiconductors
2N2222; 2N2222A
FEATURES
PINNING
High current (max. 800 mA)
PIN
Low voltage (max. 40 V).

APPLICATIONS
DESCRIPTION
emitter
base
collector, connected to case
Linear amplification and switching.

DESCRIPTION
handbook, halfpage
1
NPN switching transistor in a TO-18 metal package.

PNP complement: 2N2907A.
2
3
MAM264
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA

SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
60
75
2N2222
30
2N2222A
40
800
mA
Tamb 25 C
500
mW
75
250
MHz
300
MHz
250
ns
collector-emitter voltage
open base
IC
collector current (DC)
Ptot
total power dissipation
hFE
DC current gain
IC = 10 mA; VCE = 10 V
fT
transition frequency
IC = 20 mA; VCE = 20 V; f = 100 MHz
2N2222
2N2222A
turn-off time
1997 May 29
UNIT
2N2222A
toff
MAX.
open emitter
2N2222
VCEO
MIN.
ICon = 150 mA; IBon = 15 mA; IBoff = 15 mA
2N2222; 2N2222A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
2N2222
60
2N2222A
75
2N2222
30
2N2222A
40
2N2222
2N2222A
collector-emitter voltage
emitter-base voltage
open base
open collector
IC
collector current (DC)
800
mA
ICM
peak collector current
800
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb 25 C
500
mW
Tcase 25 C
1.2
Tstg
storage temperature
65
+150
Tj
junction temperature
200
Tamb
operating ambient temperature
65
+150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Rth j-c
thermal resistance from junction to case
1997 May 29
CONDITIONS
in free air
VALUE
UNIT
350
K/W
146
K/W
2N2222; 2N2222A
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
10
nA
IE = 0; VCB = 50 V; Tamb = 150 C
10
IE = 0; VCB = 60 V
10
nA
IE = 0; VCB = 60 V; Tamb = 150 C
10
IC = 0; VEB = 3 V
10
nA
IC = 0.1 mA; VCE = 10 V
35
IC = 1 mA; VCE = 10 V
50
IC = 10 mA; VCE = 10 V
75
IC = 150 mA; VCE = 1 V; note 1
50
IC = 150 mA; VCE = 10 V; note 1
100
300
35
2N2222
30
2N2222A
40
IC = 150 mA; IB = 15 mA; note 1
400
mV
IC = 500 mA; IB = 50 mA; note 1
1.6
IC = 150 mA; IB = 15 mA; note 1
300
mV
IC = 500 mA; IB = 50 mA; note 1
IC = 150 mA; IB = 15 mA; note 1
1.3
IC = 500 mA; IB = 50 mA; note 1
2.6
IC = 150 mA; IB = 15 mA; note 1
0.6
1.2
IC = 500 mA; IB = 50 mA; note 1
pF
25
pF
2N2222
250
MHz
2N2222A
300
MHz
dB
DC current gain
DC current gain
IC = 10 mA; VCE = 10 V; Tamb = 55 C
collector-emitter saturation voltage

2N2222A
VBEsat
base-emitter saturation voltage

2N2222
VBEsat
IC = 500 mA; VCE = 10 V; note 1
collector-emitter saturation voltage

2N2222
VCEsat
base-emitter saturation voltage

2N2222A
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
Ce
emitter capacitance
IC = ic = 0; VEB = 500 mV; f = 1 MHz
2N2222A
fT
UNIT
IE = 0; VCB = 50 V
2N2222A
hFE
MAX.
collector cut-off current

2N2222A
hFE
MIN.
collector cut-off current

2N2222
ICBO
CONDITIONS
transition frequency
noise figure
2N2222A
1997 May 29
IC = 20 mA; VCE = 20 V; f = 100 MHz
IC = 200 A; VCE = 5 V; RS = 2 k;
f = 1 kHz; B = 200 Hz
SYMBOL
2N2222; 2N2222A
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Switching times (between 10% and 90% levels); see Fig.2

ton
turn-on time
ICon = 150 mA; IBon = 15 mA; IBoff = 15 mA
35
ns
td
delay time
10
ns
tr
rise time
25
ns
toff
turn-off time
250
ns
ts
storage time
200
ns
tf
fall time
60
ns
Note
1. Pulse test: tp 300 s; 0.02.
VBB
ndbook, full pagewidth
VCC
RB
RC
Vo
(probe)
oscilloscope
450
(probe)
450
R2
Vi
DUT
R1
MLB826
Vi = 9.5 V; T = 500 s; tp = 10 s; tr = tf 3 ns.

R1 = 68 ; R2 = 325 ; RB = 325 ; RC = 160 .
VBB = 3.5 V; VCC = 29.5 V.
Oscilloscope input impedance Zi = 50 .
Fig.2 Test circuit for switching times.
1997 May 29
oscilloscope
2N2222; 2N2222A
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
seating plane
w M A M B M
D1
2
3
a
D
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
D1
mm
5.31
4.74
2.54
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
0.40
45
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT18/13
B11/C7 type 3
TO-18
1997 May 29
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-18
2N2222; 2N2222A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 May 29
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Philips Electronics N.V. 1997
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 May 29
Document order number:
9397 750 02161
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DISCRETE SEMICONDUCTORS

NPN switching transistors

High current (max. 800 mA)

Low voltage (max. 40 V).

collector, connected to case

Linear amplification and switching.

NPN switching transistor in a TO-18 metal package.

Fig.1 Simplified outline (TO-18) and symbol.

QUICK REFERENCE DATA

collector current (DC)

total power dissipation

IC = 20 mA; VCE = 20 V; f = 100 MHz

ICon = 150 mA; IBon = 15 mA; IBoff = 15 mA

NPN switching transistors

collector current (DC)

peak collector current

peak base current

total power dissipation

operating ambient temperature

thermal resistance from junction to ambient

thermal resistance from junction to case

NPN switching transistors

emitter cut-off current

IE = 0; VCB = 50 V; Tamb = 150 C

IE = 0; VCB = 60 V; Tamb = 150 C

IC = 0.1 mA; VCE = 10 V

IC = 150 mA; VCE = 1 V; note 1

IC = 150 mA; VCE = 10 V; note 1

IC = 150 mA; IB = 15 mA; note 1

IC = 500 mA; IB = 50 mA; note 1

IC = 150 mA; IB = 15 mA; note 1

IC = 500 mA; IB = 50 mA; note 1

IC = 150 mA; IB = 15 mA; note 1

IC = 500 mA; IB = 50 mA; note 1

IC = 150 mA; IB = 15 mA; note 1

IC = 500 mA; IB = 50 mA; note 1

IC = 10 mA; VCE = 10 V; Tamb = 55 C

collector-emitter saturation voltage

base-emitter saturation voltage

IC = 500 mA; VCE = 10 V; note 1

collector-emitter saturation voltage

base-emitter saturation voltage

IC = ic = 0; VEB = 500 mV; f = 1 MHz

collector cut-off current

collector cut-off current

IC = 20 mA; VCE = 20 V; f = 100 MHz

NPN switching transistors

Switching times (between 10% and 90% levels); see Fig.2

ICon = 150 mA; IBon = 15 mA; IBoff = 15 mA

ndbook, full pagewidth

Vi = 9.5 V; T = 500 s; tp = 10 s; tr = tf 3 ns.

Fig.2 Test circuit for switching times.

NPN switching transistors

NPN switching transistors

This data sheet contains final product specifications.

Philips Semiconductors a worldwide company

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Philips Electronics N.V. 1997

Printed in The Netherlands

Date of release: 1997 May 29