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Sri Balaji Technical Campus, Jaipur: Benad Road, Jaipur-302013 Faculty of Engineering

This document contains an assignment for an electrical engineering course on power electronics. It includes 5 subjective questions asking students to explain concepts related to thyristors, MOSFETs, thyristor models, GTOs, and power BJTs. It also includes 20 multiple choice objective questions covering topics like voltage source inverters using MOSFETs, I-V characteristics of composite switches, SCR turn-off times, Ohm's law, thyristor commutation, dual converters, and calculations involving rectifiers, ripple voltage, and power dissipation. Students are to submit their answers by August 29, 2014.

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143 views

Sri Balaji Technical Campus, Jaipur: Benad Road, Jaipur-302013 Faculty of Engineering

This document contains an assignment for an electrical engineering course on power electronics. It includes 5 subjective questions asking students to explain concepts related to thyristors, MOSFETs, thyristor models, GTOs, and power BJTs. It also includes 20 multiple choice objective questions covering topics like voltage source inverters using MOSFETs, I-V characteristics of composite switches, SCR turn-off times, Ohm's law, thyristor commutation, dual converters, and calculations involving rectifiers, ripple voltage, and power dissipation. Students are to submit their answers by August 29, 2014.

Uploaded by

hodeegits9526
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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SRI BALAJI TECHNICAL CAMPUS, JAIPUR

Benad Road, Jaipur-302013


Faculty of Engineering
Course: Electrical Engineering Semester: V- Sem.
Subject code & Name: (5EE1) Power Electronics III

Assignment No.: I Due Date of Submission: 29/8/2014

Subjective Questions:
1. Explain thyristor with different mode of operations & draw its I-V characteristics &
switching characteristics.
2. Explain theory and working of low power MOSFET and high power MOSFET with its
construction and working.
3. Describe two transistors model of thyristor and name different firing method of SCR.
4. Explain GTO in detail.
5. Explain npn type power BJT with its different char.

Objective Questions
[1] " Six MOSFETs connected in a bridge configuration (having no other power device) MUST
be operated as a Voltage Source Inverter (VSI) ". This statement is
A. True, because being majority carrier devices, MOSFETs are voltage driven
B. True, because MOSFETs have inherently anti parallel diodes
C. False, because it can be operated both as current source Inverter (CSI) or a VSI
D. False, because MOSFETs can be operated as excellent constant current sources in the
saturation region
[2] Figure shows a composite switch consisting of a power transistor (BJT) in series with a
diode. Assuming that the transistor switch and the diode are ideal, the I-V characteristic of the
composite switch is


[3] Circuit turn-off time of an SCR is defined as the time
A. taken by the SCR to turn off
B.required for SCR current to become zero
C. for which the SCR is reverse biased by the commutation circuit
D. for which the SCR is reverse biased to reduce its current below the holding current

[4] With Ohm's law, if voltage increases and resistance stays the same:

A. current remains the same


B. power decreases


C. current increases


D. resistance decreases
[5]What happens to current and resistance if the voltage doubles?

A. Current doubles and resistance doubles.


B.Current doubles and resistance is halved.


C.Current remains the same and resistance doubles.


D.Current doubles and resistance remains the same.
[6]Which semiconductor power device out of the following is not a current trigger device
a) Thyristor
b) Gto
c) Triac
d) Mosfet
[7]The triac can be used only in-
a) Inverter
b) Rectifier
c) Multi-quadrant chopper
d) Cyclo-convertor
[8]Which of the following does not cause permanent damage of an SCR?
a) High current
b) High rate of rise of current
c) High temperature rise
d) High rate of rise to voltage

[9]In a thyristor dc chopper which type of commutation results in best performance?
a) Voltage commutation
b) Current commutation
c) Load commutation
d) Supply commutation
[10]If a diode is connected in anti-parallel with a thyristor then-
a) Both turn off power loss and turn off time decrease
b) Turn off power loss decrease but turn off increase
c) Turn off power loss increase ,but turn off time decrease
d) None of above
[11]In a dual converter the circulating current-
a) Allows smooth reversal of load current ,but increase the response time
b) Does not allow smooth reversal of load current ,but reduces the response time
c) Allow smooth reversal of load current with improved speed of response
d) None of above

[12]In a commutation circuit employed to turn off an SCR satisfactory turn off is obtained when-
a) Circuit turn off time <device turn off time
b) Circuit turn off time>device turn off time
c) Circuit time constant>device turn off time
d) Circuit time constant<device turn off time
[13]When the firing angle of a single phase fully controlled rectifier feeding constant dc
current into a load of 30`, the displacement power factor of the rectifier is
a) 1
b) 0.5
c) 0.577
d) 0.866
[14]A 3 phase fully controlled converter is feeding power into a dc load at a constant current of
150A. the rms current through each thyristor of the convertor is-
a) 50A
b) 100A
c) 122.47A
d) 86.60A
[15]An SCR has half cycle surge current rating of 3000A for 50hz supply. One cycle surge
current rating will be-
a) 1500A
b) 2121.32A
c) 4242.64A
d) 6000A
[16] Find the concentration of holes and electrons in a p-type germanium at 300
0
k if the
conductivity is 100 (ohm-cm)
-1
. For germanium at 300
0
k, assume:
Ni=2.5*10
13
/cm
3
, p=1800 cm
3
/v-sec
(a)1.802*10
9
cm
-3
(b)1. 702*109cm
-3
(c)1. 805*10
9
cm
-3
(d)1. 809*10
9
cm
-3

[17] A bridge rectifier has an output d.c current of 20 mA and a filter capacitance of 470 f. Find
the peak-peak ripple voltage of ripple frequency is 100 Hz.
(a) 1.456 v (b) 0.425 v (c) 0.444 v (d) 1.120 v
[18] A half wave rectifier , operated a 50 Hz supply, uses a 1000 f filter capacitance connected
across the load for the rectifier. calculate the minimum value of the load resistance that can be
connected across the capacitor if the percent ripple is not to exceed 5%.
(a) 115.47 (b) 119.43 (c) 118.9 (d) 105.9
[19] A SCR has a supply voltage 200V
rms
50 Hz applied through a 100 resistor and fired at an
angle of 60
o.
Assuming no voltage drop across SCR rms valur of voltage is
(a) 89.7 V
(b) 126.69 V
(c) 166.7 V
(d) 2002 V
[20] A half wave SCR controlled circuit with R
L
= 50 conducts for 90
o
for an applied voltage
of 300 V
rms
=. If the SCR voltage drop is negligible the power dissipated by the load
is
(a) 1800W
(b) 91.19 W
(c) 52.36W
(d) 30W

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