4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors

Optocoupler, Phototransistor Output, With Base Connection

Features

Isolation Test Voltage 5300 VRMS

Interfaces with common logic families
Input-output coupling capacitance < 0.5 pF
Industry Standard Dual-in line 6-pin package
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

6 B

5 C

NC

4 E

e3

i179004

Agency Approvals

Pb
Pb-free

Underwriters Laboratory File #E52744

DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1

Applications
AC mains detection
Reed relay driving
Switch mode power supply feedback
Telephone ring detection
Logic ground isolation
Logic coupling with high frequency noise rejection

These isolation processes and the Vishay ISO9001

quality program results in the highest isolation performance available for a commecial plastic phototransistor optocoupler.
The devices are available in lead formed configuration suitable for surface mounting and are available
either on tape and reel, or in standard tube shipping
containers.
Note:
Designing with data sheet is cover in Application Note 45

Order Information
Part

Description
This data sheet presents five families of Vishay Industry Standard Single Channel Phototransistor Couplers.These families include the 4N35/ 4N36/ 4N37/
4N38 couplers.
Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL)
listed to comply with a 5300 VRMS isolation test voltage.
This isolation performance is accomplished through
Vishay double molding isolation manufacturing process. Comliance to DIN EN 60747-5-2(VDE0884)/
DIN EN 60747-5-5 pending partial discharge isolation
specification is available for these families by ordering
option 1.

Document Number 83717

Rev. 1.5, 27-Jan-05

Remarks

4N35

CTR > 100 %, DIP-6

4N36

CTR > 100 %, DIP-6

4N37

CTR > 100 %, DIP-6

4N38

CTR > 20 %, DIP-6

4N35-X006

CTR > 100 %, DIP-6 400 mil (option 6)

4N35-X007

CTR > 100 %, SMD-6 (option 7)

4N35-X009

CTR > 100 %, SMD-6 (option 9)

4N36-X007

CTR > 100 %, SMD-6 (option 7)

4N36-X009

CTR > 100 %, SMD-6 (option 9)

4N37-X006

CTR > 100 %, DIP-6 400 mil (option 6)

4N37-X009

CTR > 100 %, SMD-6 (option 9)

For additional information on the available options refer to

Option Information.

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1

4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input
Symbol

Value

Reverse voltage

Parameter

VR

6.0

Forward current

IF

60

mA

IFSM

2.5

Pdiss

100

mW

Surge current

Test condition

10 s

Power dissipation

Unit

Output
Symbol

Value

Unit

Collector-emitter breakdown
voltage

Parameter

Test condition

VCEO

70

Emitter-base breakdown
voltage

VEBO

7.0

IC

50

mA

IC

100

mA

Pdiss

150

mW

Symbol

Value

Unit

VISO

5300

VRMS

Collector current
(t 1.0 ms)
Power dissipation

Coupler
Parameter

Test condition

Isolation test voltage

Creepage

7.0

mm

Clearance

7.0

mm

Isolation thickness between

emitter and detector

0.4

mm

Comparative tracking index per

DIN IEC 112/VDE0303,part 1

175
VIO = 500 V, Tamb = 25 C

RIO

1012

VIO = 500 V, Tamb = 100 C

RIO

1011

Storage temperature

Tstg

- 55 to + 150

Operating temperature

Tamb

- 55 to + 100

Tj

100

Tsld

260

Isolation resistance

Junction temperature
Soldering temperature

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2

max. 10 s dip soldering:

distance to seating plane
1.5 mm

Document Number 83717

Rev. 1.5, 27-Jan-05

4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors
Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input
Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

1.3

1.5

1.3

1.7

0.1

10

voltage1)

IF = 10 mA

VF

IF = 10 mA, Tamb = - 55 C

VF

Reverse current1)

VR = 6.0 V

IR

Capacitance

VR = 0, f = 1.0 MHz

CO

25

Forward

1)

0.9

pF

Indicates JEDEC registered value

Output
Parameter
Collector-emitter breakdown

Test condition
IC = 1.0 mA

Part

Symbol

Min

4N35

BVCEO

30

Typ.

Max

Unit
V

4N36

BVCEO

30

4N37

BVCEO

30

4N38

BVCEO

80

BVECO

7.0

4N35

BVCBO

70

4N36

BVCBO

70

4N37

BVCBO

70

4N38

BVCBO

80

4N35

ICEO

5.0

50

nA

4N36

ICEO

5.0

50

nA

5.0

voltage1)

Emitter-collector breakdown

IE = 100 A

voltage1)
Collector-base breakdown

IC = 100 A, IB = 1.0 A

voltage1)

Collector-emitter leakage

VCE = 10 V, IF = 0

current1)
VCE = 10 V, IF=0

4N37

ICEO

50

nA

VCE = 60 V, IF = 0

4N38

ICEO

50

nA

VCE = 30 V, IF = 0, Tamb =
100 C

4N35

ICEO

500

4N36

ICEO

500

4N37

ICEO

500

4N38

ICEO

6.0

CCE

6.0

pF

VCE = 60 V, IF = 0, Tamb =
100 C
Collector-emitter capacitance
1)

VCE = 0

Indicates JEDEC registered value

Coupler
Symbol

Min

Resistance, input to output1)

Parameter

VIO = 500 V

RIO

1011

Capacitance (input-output)

f = 1.0 MHz

CIO

1)

Test condition

Typ.

Max

Unit

0.5

pF

Indicates JEDEC registered value

Document Number 83717

Rev. 1.5, 27-Jan-05

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4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors
Current Transfer Ratio
Parameter
DC Current Transfer

1)

Ratio1)

Test condition

Part

Symbol

Min

VCE = 10 V, IF = 10 mA

4N35

CTRDC

100

Typ.

Max

Unit
%

4N36

CTRDC

100

4N37

CTRDC

100

VCE = 10 V, IF = 20 mA

4N38

CTRDC

20

VCE = 10 V, IF = 10 mA,
TA = - 55 to + 100 C

4N35

CTRDC

40

50

4N36

CTRDC

40

50

4N37

CTRDC

40

50

4N38

CTRDC

30

Indicates JEDEC registered value

Switching Characteristics
Parameter
Switching
1)

time1)

Test condition
IC = 2 mA, RL = 100 , VCC = 10 V

Symbol

Min

ton, toff

Typ.

Max

Unit
s

10

Indicates JEDEC registered value

Typical Characteristics (Tamb = 25 C unless otherwise specified)

1.4

1.5
TA = 55C

NCTR - Normlized CTR

VF - Forward Voltage - V

1.3
1.2

TA = 25C

1.1
1.0
0.9

TA = 85C

0.8

1.0
TA=25C

0.5
NCTR(SAT)
NCTR

0.7
.1

1
10
IF - Forward Current - mA

0.0

100

i4n25_01

1
10
IF - LED Current - mA

100

i4n25_02

Figure 1. Forward Voltage vs. Forward Current

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4

Normalized to:
Vce=10 V, IF=10 mA, TA=25C
CTRce(sat) Vce=0.4 V

Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED

Current

Document Number 83717

Rev. 1.5, 27-Jan-05

4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors

35

Normalized to:
Vce=10 V, IF=10 mA, TA=25C
CTRce(sat) Vce=0.4 V

30

Ice - Collector Current - mA

NCTR - Normalized CTR

1.5

1.0
TA=50C

0.5
NCTR(SAT)
NCTR

25

25C

85C

10
5
0

.1

1
10
IF- LED Current - mA

100

10

20

30

40

50

60

IF - LED Current - mA

i4n25_03

i4n25_06

Figure 3. Normalized Non-saturated and Saturated CTR vs. LED

Current

1.5

10

Normalized to:
Vce=10 V, IF=10 mA, TA=25C
CTRce(sat) Vce=0.4 V

1.0
TA=70C

0.5
NCTR(SAT)
NCTR

0.0
.1

Figure 6. Collector-Emitter Current vs. Temperature and LED

Current

Iceo - Collector-Emitter - nA

NCTR - Normalized CTR

70C

15

0.0

1
10
IF - LED Current - mA

100

10
10

5
4
3

10 2
10
10

Vce = 10 V

Typical

10 1
10 2
20

20

40

60

80

100

TA - Ambient Temperature - C

i4n25_04

i4n25_07

Figure 7. Collector-Emitter Leakage Current vs.Temp.

Figure 4. Normalized Non-saturated and saturated CTR vs. LED

Current

1.5

1.5

Normalized to:
Vce=10 V, IF=10 mA, TA=25C
CTRce(sat) Vce = 0.4 V

NCTRcb - Normalized CTRcb

NCTR - Normalized CTR

50C

20

1.0
TA=85C

0.5
NCTR(SAT)
NCTR

1
10
IF - LED Current - mA

100

i4n25_05

Figure 5. Normalized Non-saturated and saturated CTR vs. LED

Current

Document Number 83717

Rev. 1.5, 27-Jan-05

1.0

0.5
25C
50C
70C
0.0
.1

0.0
.1

Normalized to:
Vcb=9.3 V, IF=10 mA, TA=25C

10

100

IF - LED Current - mA
i4n25_08

Figure 8. Normalized CTRcb vs. LED Current and Temp.

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4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors

0.1
Nib, TA=20C
Nib, TA= 25C
Nib, TA= 50C
Nib, TA= 70C

10

1.5
tPLH

1.0
1

Figure 12. Propagation Delay vs. Collector Load Resistor

IF

25C
20C

tD

Normalized to:
Ib=20 A, Vce=10 V, TA=25C

0.6

tR

VO

tPLH
VTH=1.5 V
tPHL

10
100
Ib - Base Current - A

i4n25_13

Figure 10. Normalized Non-saturated HFE vs. Base Current and

Temperature

NHFE(sat) - Normalized Saturated HFE

tF

tS

1000

i4n25_10

Figure 13. Switching Timing

1.5

70C

50C

Normalized to:
Vce=10 V, Ib=20 A
T A =25C

VCC = 5.0 V

1.0

F=10 KHz,
DF=50%

25C

RL
VO

20C
0.5
IF=1 0 mA

Vce=0.4 V
0.0
1

10

100

1000

Ib - Base Current - A

i4n25_11

Figure 11. Normalized HFE vs. Base Current and Temp.

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6

100

RL - Collector Load Resistor - k

0.8

0.4

10

i4n25_12

70C

1.0

2.0

10

100

Figure 9. Normalized Photocurrent vs. IF and Temp.

1.2

tPHL

1
.1

IF - LED Current - mA

i4n25_09

100

tPHL - Propagation Delay - s

0.01
.1

IF =10 mA,TA=25C
VCC =5.0 V, Vth=1.5 V

tPLH - Propagation Delay - s

Normalized Photocurrent

Normalized to:
IF=10 mA, TA=25C

NHFE - Normalized HFE

2.5

1000

10

i4n25_14

Figure 14. Switching Schematic

Document Number 83717

Rev. 1.5, 27-Jan-05

4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors
Package Dimensions in Inches (mm)
For 4N35/36/37/38..... see DIL300-6 Package dimension in the Package Section.
For products with an option designator (e.g. 4N35-X006 or 4N36-X007)..... see DIP-6 Package dimensions in the Package Section.

DIL300-6 Package Dimensions

14770

DIP-6 Package Dimensions

3

pin one ID

.248 (6.30)
.256 (6.50)
ISO Method A

.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4
typ.
.018 (0.45)
.022 (0.55)

.300 (7.62)
typ.

.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)

18
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.

39

.114 (2.90)
.130 (3.0)

.010 (.25)
typ.
.300.347
(7.628.81)

i178004

Document Number 83717

Rev. 1.5, 27-Jan-05

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4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors

Option 6

Option 7

.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)

.300 (7.62)
TYP.

Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.

.028 (0.7)
MIN.

.180 (4.6)
.160 (4.1) .0040 (.102)

.0098 (.249)
.315 (8.0)
MIN.
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)

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8

.331 (8.4)
MIN.
.406 (10.3)
MAX.

.012 (.30) typ.

.020 (.51)
.040 (1.02)

.315 (8.00)
min.

15 max.

18450

Document Number 83717

Rev. 1.5, 27-Jan-05

4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 83717

Rev. 1.5, 27-Jan-05

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9

Legal Disclaimer Notice

Vishay

Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

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1