Experiment No 2: To Study The Characteristics of Photo-Transistor To Measure The Intensity of Light Apparatus

EXPERIMENT NO 2:
TO STUDY THE CHARACTERISTICS OF PHOTO-TRANSISTOR TO MEASURE

THE INTENSITY OF LIGHT
APPARATUS:
Photovoltaic Cell
Power amplifier
Potentiometer
12-V DC Power supply
Heating filament
Voltmeter
THEORY:
PHOTO-TRNASISTOR:
"The phototransistor is a semiconductor light sensor formed from a basic transistor with a
transparent cover that provides much better sensitivity than a photodiode."
Functionally, the phototransistor is very similar to the light-meter circuit we built and discussed
previously. As the photodiode resistance decreases, the base current of the transistor increases, and the
collector current increases accordingly.
If an Ohmmeter were connected across the emitter and collector, it would see a decrease in
resistance as the current increased. Though, this is impossible to measure. Now you will measure
photodiode and phototransistor resistances The photodiode measurements will be made between the base
and collector terminals of the phototransistor The phototransistor measurements will be made between the
collector and emitter terminals of the phototransistor
A phototransistor is a bipolar device that is
completely made of silicon or another semi-
conductive material and is dependent on light
energy. Phototransistors are generally encased in an
opaque or clear container in order to enhance
light as it travels through it and allow the light to
reach the phototransistors sensitive parts. A
phototransistor generally has an exposed base
that amplifies the light that it comes in contact
with. This causes a relatively high current to pass through the phototransistor. As the current spreads from
the base to the emitter, the current is concentrated and converted into voltage.
CONSTRUCTION & WORKING:
The construction of a Photo transistor is just like a conventional NPN transistor with a little hole
made on the surface mean to collector base junction. A small lens is fixed on this hole for allowing a
focused light beam to concentrate on the collector base junction. In the modern methods of fabrication
highly light effective materials are used instead of making a hole and fixing of lens on it.
The Emitter Base junction Je is forward biased, whereas the collector based junction Jc is reversed
biased. When the transistor is kept in darkness there will be very few minority charge carriers, which will
cause the flow of reverse saturation collector current. This current for obvious reasons will be negligibly
small. On light being found at the collector biased junction additional photo generated minority charge
carriers will be available which will pass to the reverse saturated current. Thus as soon as the light source
is applied, the transistor starts conducting and amplified current starts flowing through the reverse biased
junction.
APPLICATIONS:
Phototransistors are used for a wide variety of applications;
I. Phototransistors can be used in any electronic device that senses light.

II. Phototransistors are often used in smoke detectors, infrared receivers, and CD players.
III. Phototransistors can also be used in astronomy, night vision, and laser range-finding.
ADVANTAGES:
I. They produce a higher current than photodiodes and also produce a voltage, something that photo
resistors cannot do.
II. They are very fast and their output is practically instantaneous.
III. They are relatively inexpensive, simple, and so small that several of them can fit onto a single
integrated computer chip.
IV. They produce a voltage, that photo-resistors cannot do so.
DISADVANTAGES:
While phototransistors can be advantageous, they also have several disadvantages.
I. Phototransistors made of silicon cannot handle voltages over 1,000 Volts.
II. They do not allow electrons to move as freely as other devices, such as electron tubes, do.
III. They are also more vulnerable to electrical surges/spikes and electromagnetic energy.
DIAGRAM:
PROCEDURE:
Connect the circuit as shown in figure and adjust the sliding carbon potentiometer of
10K in position 2 so that the resistance with the load of the phototransistor will be approximately
2K.
Connect the power supply (ON), adjust the wire wound potentiometer of 10K for that the voltage
will be null at the output of the power amplifier.
Note the output voltage of the collector of the phototransistor:
With your hand covering the transparent casing (0a).
With the phototransistor exposed to ambient light (0b).
Now increase the output voltage of the power amplifier throughintervalsof1Vand observe the
voltage in the collector of the phototransistor.
OBSERVATIONS & CALCULATIONS:
Sr. No Intensity of Light (V) Output (V)

1 1 5.04
2 2 5.00
3 3 4.71
4 4 3.94
5 5 2.61
6 6 0.65
7 7 0.35
8 8 0.31
9 9 0.29
10 10 0.21
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Experiment No 2: To Study The Characteristics of Photo-Transistor To Measure The Intensity of Light Apparatus

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EXPERIMENT NO 2:

TO STUDY THE CHARACTERISTICS OF PHOTO-TRANSISTOR TO MEASURE

I. Phototransistors can be used in any electronic device that senses light.

IV. They produce a voltage, that photo-resistors cannot do so.

While phototransistors can be advantageous, they also have several disadvantages.

I. Phototransistors made of silicon cannot handle voltages over 1,000 Volts.

Sr. No Intensity of Light (V) Output (V)

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