The document provides information about the LM113/LM313 reference diode from National Semiconductor. It is a temperature compensated, low voltage reference diode that features tight voltage regulation, low breakdown voltage of 1.220V, and good temperature stability typically within 1% from -55°C to 125°C. It has applications in bias regulation circuits, low voltage power supplies, and battery powered equipment due to its stable and predictable voltage reference based on silicon band gap properties.
The document provides information about the LM113/LM313 reference diode from National Semiconductor. It is a temperature compensated, low voltage reference diode that features tight voltage regulation, low breakdown voltage of 1.220V, and good temperature stability typically within 1% from -55°C to 125°C. It has applications in bias regulation circuits, low voltage power supplies, and battery powered equipment due to its stable and predictable voltage reference based on silicon band gap properties.
The document provides information about the LM113/LM313 reference diode from National Semiconductor. It is a temperature compensated, low voltage reference diode that features tight voltage regulation, low breakdown voltage of 1.220V, and good temperature stability typically within 1% from -55°C to 125°C. It has applications in bias regulation circuits, low voltage power supplies, and battery powered equipment due to its stable and predictable voltage reference based on silicon band gap properties.
The document provides information about the LM113/LM313 reference diode from National Semiconductor. It is a temperature compensated, low voltage reference diode that features tight voltage regulation, low breakdown voltage of 1.220V, and good temperature stability typically within 1% from -55°C to 125°C. It has applications in bias regulation circuits, low voltage power supplies, and battery powered equipment due to its stable and predictable voltage reference based on silicon band gap properties.
General Description The LM113/LM313 are temperature compensated, low volt- Y Dynamic impedance of 0.3X from 500 mA to 20 mA age reference diodes. They feature extremely-tight regula- Y Temperature stability typically 1% overb55 C to 125 C tion over a wide range of operating currents in addition to an range (LM113), 0 C to 70 C (LM313) unusually-low breakdown voltage and good temperature Y Tight tolerance: g 5%, g 2% or g 1% stability. The characteristics of this reference recommend it for use in The diodes are synthesized using transistors and resistors bias-regulation circuitry, in low-voltage power supplies or in in a monolithic integrated circuit. As such, they have the battery powered equipment. The fact that the breakdown same low noise and long term stability as modern IC op voltage is equal to a physical property of siliconthe ener- amps. Further, output voltage of the reference depends only gy-band gap voltagemakes it useful for many tempera- on highly-predictable properties of components in the IC; so ture-compensation and temperature-measurement func- they can be manufactured and supplied to tight tolerances. tions.
Features Y Low breakdown voltage: 1.220V
Schematic and Connection Diagrams
Metal Can Package
Order Number LM113H, LM113H/883, LM113-1H, LM113-1H/883, LM113-2H, LM113-2H/883, or LM313H See NS Package Number H02A TL/H/5713 1
Typical Applications Low Voltage Regulator
Level Detector for Photodiode
Solid tantalum.
TL/H/5713 2
C1995 National Semiconductor Corporation TL/H/5713 RRD-B30M115/Printed in U. S. A.
Absolute Maximum Ratings If Military/Aerospace specified devices are required, Storage Temperature Range b 65 C to a 150 C please contact the National Semiconductor Sales Lead Temperature Office/Distributors for availability and specifications. (Soldering, 10 seconds) 300 C (Note 3) Operating Temperature Range Power Dissipation (Note 1) 100 mW LM113 b 55 C to a 125 C Reverse Current 50 mA LM313 0 C to a 70 C Forward Current 50 mA
Electrical Characteristics (Note 2)
Parameter Conditions Min Typ Max Units Reverse Breakdown Voltage LM113/LM313 1.160 1.220 1.280 V IR e 1 mA LM113-1 1.210 1.22 1.232 V LM113-2 1.195 1.22 1.245 V Reverse Breakdown Voltage 0.5 mA s IR s 20 mA 6.0 15 mV Change IR e 1 mA 0.2 1.0 X Reverse Dynamic Impedance IR e 10 mA 0.25 0.8 X Forward Voltage Drop IF e 1.0 mA 0.67 1.0 V 10 Hz s f s 10 kHz RMS Noise Voltage 5 mV IR e 1 mA Reverse Breakdown Voltage 0.5 mA s IR s 10 mA 15 mV Change with Current TMIN s TA s TMAX Breakdown Voltage Temperature 1.0 mA s IR s 10 mA 0.01 %/ C Coefficient TMIN s TA s TMAX Note 1: For operating at elevated temperatures, the device must be derated based on a 150 C maximum junction and a thermal resistance of 80 C/W junction to case or 440 C/W junction to ambient. Note 2: These specifications apply for TA e 25 C, unless stated otherwise. At high currents, breakdown voltage should be measured with lead lengths less than (/4 inch. Kelvin contact sockets are also recommended. The diode should not be operated with shunt capacitances between 200 pF and 0.1 mF, unless isolated by at least a 100X resistor, as it may oscillate at some currents. Note 3: Refer to the following RETS drawings for military specifications: RETS113-1X for LM113-1, RETS113-2X for LM113-2 or RETS113X for LM113.
Typical Performance Characteristics
Temperature Drift Reverse Dynamic Impedance Reverse Characteristics
Order Number LM113H, LM113H/883, LM113-1H, LM113-1H/883,
LM113-2H, LM113-2H/883 or LM313H NS Package Number H02A LIFE SUPPORT POLICY
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