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Tutorial 1

This document provides 8 problems related to modeling MOSFETs. It covers topics like: 1) Calculating the effective density of states near the conduction band edge. 2) Determining the fraction of ionized donors and acceptors and the Fermi level position given donor and acceptor levels. 3) Evaluating whether the complete ionization assumption is valid for given doping concentrations and temperatures. 4) Finding the temperature where 50% of acceptors are ionized for a given doping level.

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Ma Seenivasan
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© © All Rights Reserved
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Download as PDF, TXT or read online on Scribd
71 views

Tutorial 1

This document provides 8 problems related to modeling MOSFETs. It covers topics like: 1) Calculating the effective density of states near the conduction band edge. 2) Determining the fraction of ionized donors and acceptors and the Fermi level position given donor and acceptor levels. 3) Evaluating whether the complete ionization assumption is valid for given doping concentrations and temperatures. 4) Finding the temperature where 50% of acceptors are ionized for a given doping level.

Uploaded by

Ma Seenivasan
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Advanced MOSFET Modelling

Tutorial No:1

1. Show that the effective density of states (N C) represents the density of


states in a strip 1.2 kT wide near the edge of the conduction band.

2. In a semiconductor sample, donor and acceptor levels are 0.3eV apart


from each other. If 80% of the acceptors are ionized at 300K, evaluate the
fraction of ionized donors. If the donor level is 2kT below the conduction
band edge, determine the position of Fermi level.

3. Silicon wafers are doped with (i) 1015 (ii) 1018 arsenic atoms / cm3. Show
whether the assumption of complete ionization is justified in each case at
temperatures of 100K and 300K. Arsenic introduces a donor level E D
0.049 eV below EC.

4. A silicon wafer is doped with 10 16 atoms /cm3 of Indium, which introduces


an accepter level EA 0.16eV above EV. Determine the temperature at
which 50% of Indium is ionized. If this wafer was doped with Boron
instead of Indium, what would have been the percentage of ionization at
this temperature? For Boron, EA – EV = 0.045 eV.

5. Assuming n = ND+, show that at very low temperature


NC N D  E 
n= exp  − ion ÷. Hence show that is this temperature range, the
2  2kT 
Fermi level is an n-type semiconductor is given by
EC + ED kT  2 NC 
EF = − ln  ÷.Also find EF at 0K.
2 2  ND 

6. At moderately high temperature, assuming ND+ = ND, show that


  2n  
2
ND 
n= 1+ 1+  i ÷  Intrinsic temperature is defined as the
2   N D  

temperature at which the intrinsic concentration ‘ni’ equals the doping
concentration ‘N’. Show that the ratio T i / To is given by
Ti Eg
=
To  N C NV  . Determine Ti for Si and Ge, assuming NC and NV to
2kT ln  ÷
 N ÷
 
be independent of temperature because of the logarithmic dependence [N C
= 2.8 x 1019 / cm3, NV = 1 x 1019 / cm3 for Si, NC = 1 x 1019 / cm3 for Si, NC =
1 x 1019 / cm3, NV = 6 x 1018 / cm3 for Ge]

7. Draw the energy band diagram of silicon doped with 10 15 arsenic


atoms/cm3 at 77K, 300K and 600K showing the Fermi level?

8. A silicon wafer is doped with 2 x 1016 boron and 1016 phosphorus atoms/
cm3. Calculate n, p, EF at room temperature, assuming complete
ionization. Repeat the same for 8 x 1015 boron atoms / cm3?

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