UP6281 uPISemiconductor
UP6281 uPISemiconductor
UP6281 uPISemiconductor
VIN
BOOT 1 8 UGATE
PWM 2 7 PHASE
GND
OD# 3 6 GND
PWM 1 BOOT UGATE 8
VCC 4 5 LGATE Input VOUT
2 PWM PHASE 7
PSOP-8L
3 OD# GND 6
VCC
BOOT 1 8 UGATE 4 VCC LGATE 5
PWM 2 7 PHASE
GND
OD# 3 6 GND
VCC 4 5 LGATE
WDFN3x3-8L
BOOT
VCC UVLO
Adaptive
Shoot-Through UGATE
Protection
OD# Output
PHASE
Disable
PWM
Adaptive VCC
Shoot-Through LGATE
Protection
GND
2 PWM PWM Input. This pin receives logic level input and controls the driver outputs.
Output Disable. This pin disables normal operation and forces both UGATE and LGATE off
3 OD#
when it is pulled low.
Supply Voltage for the IC. This pin provides bias voltage for the IC. Connect this pin to 12V
4 VC C
voltage source and bypass it with an R/C filter.
L o w e r Ga te D riv e r Ou tp u t. C o nne ct thi s p i n to the g a te o f lo we r MOS F E T. Thi s p i n i s
5 LGATE moni tored by the adapti ve shoot-through protecti on ci rcui try to determi ne when the lower
MOSFET has turn off.
6 GND Ground for the IC. All voltages levels are measured with respect to this pin.
PHASE Sw itch Node. Connect this pin to the source of the upper MOSFET and the drain of
the lower MOSFET. This pin is used as the sink for the UGATE driver. This pin is also monitored
7 PHASE by the adaptive shoot-through protection circuitry to determine when the upper MOSFET has
turned off. A Schottky diode between this pin and ground is recommended to reduce negative
transient voltage which is common in a power supply system.
U p p er Gate D river Ou tp u t. C onnect thi s pi n to the gate of upper MOS F E T. Thi s pi n i s
8 UGATE moni tored by the adapti ve shoot-through protecti on ci rcui try to determi ne when the upper
MOSFET has turned off.
Exposed Pad Gro u n d fo r th e IC . The exposed pad should be well soldered to P C B for effecti ve heat
(GND) conduction.
Thermal Information
Package Thermal Resistance (Note 3)
PSOP-8 θJA -------------------------------------------------------------------------------------------------------------------------------- 50°C/W
WDFN3x3-8L θJA ------------------------------------------------------------------------------------------------------------------------- 68°C/W
PSOP-8L θJC -------------------------------------------------------------------------------------------------------------------------- 5°C/W
WDFN3x3-8L θJC --------------------------------------------------------------------------------------------------------------------------- 6°C/W
Power Dissipation, PD @ TA = 25°C
PSOP-8L ------------------------------------------------------------------------------------------------------------------------ 2.0W
WDFN3x3-8L --------------------------------------------------------------------------------------------------------------------------- 1.47W
Electrical Characteristics
(VCC = 12V, TA = 25OC, unless otherwise specified)
Supply Input
Supply Input Voltage V CC 10.8 -- 13.2 V
Supply Input Current ICC PWM = OD# = 0V, each channel -- 1 2.5 mA
VCC POR Rising Threshold VCCRTH VCC rising 4.0 4.2 4.4 V
VCC POR Hysteresis VCCHYS -- 0.25 -- V
TPDLDOD# TPDHDOD#
90%
UGATE or
LGATE 10%
PWM
TPDLLGATE TFLGATE
LGATE
UGATE
Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device.
These are for stress ratings. Functional operation of the device at these or any other conditions beyond those
indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may remain possibility to affect device reliability.
Note 2. Devices are ESD sensitive. Handling precaution recommended.
Note 3. θJA is measured in the natural convection at TA = 25°C on a low effective thermal conductivity test board of
JEDEC 51-3 thermal measurement standard.
Note 4. The device is not guaranteed to function outside its operating conditions.
OD# OD#
(1V/Div) (1V/Div)
LGATE LGATE
(5V/Div) (5V/Div)
UGATE
(5V/Div)
UGATE
(5V/Div)
LGATE
PHASE
(5V/Div)
(5V/Div)
PWM
(2V/Div)
LGATE
UGATE-PHASE
(5V/Div)
(5V/Div)
UGATE UGATE
(5V/Div) (5V/Div)
UGATE-PHASE UGATE-PHASE
(5V/Div) (5V/Div)
1.50 ± 0. 10
2.20 ± 0. 10
4.00 ± 0. 10
2.20 ± 0. 10
7.00 ± 0.10
5.50 ± 0.10
5.80 - 6.20
3.80 - 4.00
1.80 - 2.30
1.27 BSC 0.32 - 0.52
1.45 - 1.60
Note
1.Package Outline Unit Description:
BSC: Basic. Represents theoretical exact dimension or dimension target
MIN: Minimum dimension specified.
MAX: Maximum dimension specified.
REF: Reference. Represents dimension for reference use only. This value is not a device specification.
TYP. Typical. Provided as a general value. This value is not a device specification.
2.Dimensions in Millimeters.
3.Drawing not to scale.
4.These dimensions no not include mold flash or protrusions. Mold flash or protrusions shell not exceed 0.15mm.
5 8
1.60 - 1.80
2.90 - 3.10
4 1
3.45 - 3.55
1.60 - 1.80
2.15 - 2.25
0.20 REF 0.00 - 0.05
Note
1.Package Outline Unit Description:
BSC: Basic. Represents theoretical exact dimension or dimension target
MIN: Minimum dimension specified.
MAX: Maximum dimension specified.
REF: Reference. Represents dimension for reference use only. This value is not a device specification.
TYP. Typical. Provided as a general value. This value is not a device specification.
2.Dimensions in Millimeters.
3.Drawing not to scale.
4.These dimensions no not include mold flash or protrusions. Mold flash or protrusions shell not exceed 0.15mm.