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UP6281 uPISemiconductor

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uP6281

12V MOSFET Drivers with Output Disable


for Single Phase Synchronous-Rectified Buck Converter
General Description Features
The uP6281 is a dual, high voltage MOSFET driver optimized † All-In-One Synchronous Buck Drivers
for driving two N-Channel MOSFETs in a synchronous- † Bootstrapped High-Side Driver
rectified buck converter. Each driver is capable of driving a
5000pF load with 30ns transition time. This device combined † Adaptive Anti-Shoot-Through Protection
with uPI multi-phase buck PWM controller forms a complete Circuitry
core voltage regulator for advanced micro-processors. † 1 PWM Signal Generates both Drivers
† Tri-State Input for Bridge Shutdown
The uP6281 features adaptive anti-shoot-through protection
that prevents cross-conduction of the external MOSFET † Output Disable Control Turns Off both MOSFETs
while maintains minimum deadtime for optimized efficiency. † Under Voltage Lockout for Supply Input
† PSOP-8L or WDFN3x3-8L Packages
Both gate drives are turned off by pulling low OD# pin or
† RoHS Compliant and Halogen Free
high-impedance at PWM pin, preventing rapid output
capacitor discharge during system shutdowns. Ordering Information
Other feature is supply input under voltage lockout. The
uP6281 is available in thermal enhanced PSOP-8L or Order Number Package Type Remark
WDFN3x3-8L packages. uP6281ASU8 PSOP - 8L
Applications uP6281ADD8 WDFN3x3 - 8L
† Core Voltage Supplies for Desktop, Note: uPI products are compatible with the current IPC/
Motherboard CPUs JEDEC J-STD-020 requirement. They are halogen-free,
† High Frequency Low Profile DC/DC Converters RoHS compliant and 100% matte tin (Sn) plating that are
suitable for use in SnPb or Pb-free soldering processes.
† High Current Low Voltage DC/DC Converters

Pin Configuration & Typical Application Circuit

VIN
BOOT 1 8 UGATE

PWM 2 7 PHASE
GND
OD# 3 6 GND
PWM 1 BOOT UGATE 8
VCC 4 5 LGATE Input VOUT
2 PWM PHASE 7
PSOP-8L
3 OD# GND 6
VCC
BOOT 1 8 UGATE 4 VCC LGATE 5

PWM 2 7 PHASE
GND
OD# 3 6 GND

VCC 4 5 LGATE

WDFN3x3-8L

uPI Semiconductor Corp., http://www.upi-semi.com 1


Rev. F03, File Name: uP6281-DS-F0300

Free Datasheet http://www.Datasheet4U.com


uP6281
Functional Block Diagram

BOOT
VCC UVLO
Adaptive
Shoot-Through UGATE
Protection
OD# Output
PHASE
Disable

PWM
Adaptive VCC
Shoot-Through LGATE
Protection
GND

Functional Pin Description


N o. Pin Name Pin Function
Bootstrap Supply for the floating upper gate driver. Connect the bootstrap capacitor CBOOT
1 BOOT between BOOT pin and the PHASE pin to form a bootstrap circuit. The bootstrap capacitor
provides the charge to turn on the upper MOSFET. Ensure that CBOOT is placed near the IC.

2 PWM PWM Input. This pin receives logic level input and controls the driver outputs.

Output Disable. This pin disables normal operation and forces both UGATE and LGATE off
3 OD#
when it is pulled low.
Supply Voltage for the IC. This pin provides bias voltage for the IC. Connect this pin to 12V
4 VC C
voltage source and bypass it with an R/C filter.
L o w e r Ga te D riv e r Ou tp u t. C o nne ct thi s p i n to the g a te o f lo we r MOS F E T. Thi s p i n i s
5 LGATE moni tored by the adapti ve shoot-through protecti on ci rcui try to determi ne when the lower
MOSFET has turn off.

6 GND Ground for the IC. All voltages levels are measured with respect to this pin.

PHASE Sw itch Node. Connect this pin to the source of the upper MOSFET and the drain of
the lower MOSFET. This pin is used as the sink for the UGATE driver. This pin is also monitored
7 PHASE by the adaptive shoot-through protection circuitry to determine when the upper MOSFET has
turned off. A Schottky diode between this pin and ground is recommended to reduce negative
transient voltage which is common in a power supply system.
U p p er Gate D river Ou tp u t. C onnect thi s pi n to the gate of upper MOS F E T. Thi s pi n i s
8 UGATE moni tored by the adapti ve shoot-through protecti on ci rcui try to determi ne when the upper
MOSFET has turned off.
Exposed Pad Gro u n d fo r th e IC . The exposed pad should be well soldered to P C B for effecti ve heat
(GND) conduction.

uPI Semiconductor Corp., http://www.upi-semi.com 2


Rev. F03, File Name: uP6281-DS-F0300

Free Datasheet http://www.Datasheet4U.com


uP6281
Functional Description
The uP6281 is a dual, high voltage MOSFET driver optimized The bootstrap capacitor CBOOT is charged to VCC when
for driving two N-Channel MOSFETs in a synchronous- PHASE pin is grounded by turning on the low-side
rectified buck converter. Each driver is capable of driving a MOSFET. The PHASE raises to VIN when the high-side
5000pF load with 30ns transition time. This device combined MOSFET is turned on, forcing the BOOT pin voltage to VIN
with uPI multi-phase buck PWM controller forms a complete + VCC that provides voltage to hold the high-side MOSFET
core voltage regulator for advanced microprocessors. on.
The uP6281 features adaptive anti-shoot-through protection The high-side gate driver output is in phase with the PWM
that prevents cross-conduction of the external MOSFET input when it is enabled. The high-side driver is held low if
while maintains minimum deadtime for optimized efficiency. the OD# pin is pulled low or high-impedance at PWM pin.
Both gate drives are turned off by pulling low OD# pin or Adaptive Shoot Through Protection
high-impedance at PWM pin, preventing rapid output
The adaptive shoot-through circuit prevents the high-side
capacitor discharge during system shutdowns.
and low-side MOSFETs from being ON simultaneously and
Other feature is supply input under voltage lockout. The conducting destructive large current. It is done by turning
uP6281 is available in thermal enhanced PSOP-8L or on one MOSFET only after the other MOSFET is off already
WDFN3x3-8L packages. with adequately delay time.
Output Disable At the high-side off edge, UGATE and PHASE voltages
are monitored for anti-shoot-through protection. The uP6281
Logic low of OD# disables the gate drivers and keep both
will not begin to output low-side driver high until both (VUGATE
output low. Tie the OD# pin to controller power directly if
- VPHASE) and VPHASE are lower than 1.2V, making sure the
the output disable function is not used.
high-side MOSFET is turned off completely.
PWM Input
At the low-side off edge, LGATE voltage is monitored for
The PWM pin is a tri-state input. Logic high turns on the anti-shoot-through protection. The uP6281 will not begin
high-side gate driver and turns off the low side gate driver to output high-side driver high until VLGATE is lower than
once the POR of VCC is granted and OD# is kept high. 1.2V, making sure the low-side MOSFET is turned off
Logic low turns off the high side gate driver and turns off completely.
the low side gate driver.
High impedance input at PWM pin will keep both high-side
and low-side gate drivers low and turns off both MOSFETs.
The PWM pin voltage is kept around 2.0V by internal bias
resistors when floating.
Low Side Driver
The low-side driver is designed to drive a ground-referenced
N-Channel MOSFET. The bias to the low-side driver is
internally connected to VCC supply and GND. The low-
side driver output is out of phase with the PWM input when
it is enabled. The low side driver is held low if the OD# pin
is pulled low or high-impedance at PWM pin.
High-Side Driver
The high-side driver is designed to drive a floating N-Channel
MOSFET. The bias voltage to the high-side driver internally
connected to BOOT and PHASE pins. An external
bootstrap supply circuit that is connected between BOOT
and PHASE pins provides the bias current for the high-
side gate driver.

uPI Semiconductor Corp., http://www.upi-semi.com 3


Rev. F03, File Name: uP6281-DS-F0300

Free Datasheet http://www.Datasheet4U.com


uP6281
Absolute Maximum Rating
Supply Input Voltage, VCC12 (Note 1) ---------------------------------------------------------------------------------------- -0.3V to +15V
BOOT to PHASE ---------------------------------------------------------------------------------------------------------------------------- -0.3V to +15V
PHASE to GND
DC --------------------------------------------------------------------------------------------------------------------------------------- -0.7V to 15V
< 200ns ---------------------------------------------------------------------------------------------------------------------------------- -8V to 30V
BOOT to GND
DC ------------------------------------------------------------------------------------------------------------------------ -0.3V to VCC12 + 15V
< 200ns -------------------------------------------------------------------------------------------------------------------------------- -0.3V to 42V
UGATE to PHASE
DC------------------------------------------------------------------------------------------------------------- -0.3V to (BOOT - PHASE +0.3V)
<200ns ---------------------------------------------------------------------------------------------------- -5V to (BOOT - PHASE + 0.3V)
LGATE to GND
DC ------------------------------------------------------------------------------------------------------------------ -0.3V to + (VCC12 + 0.3V)
<200ns ------------------------------------------------------------------------------------------------------------------- -5V to VCC12 + 0.3V
PWM ----------------------------------------------------------------------------------------------------------------------------------------------- -0.3V to +6V
OD# ----------------------------------------------------------------------------------------------------------------------------------- -0.3V to (VCC + 0.3)V
Storage Temperature Range ------------------------------------------------------------------------------------------------------------- -65OC to +150OC
Junction Temperature ------------------------------------------------------------------------------------------------------------------------------------ 150OC
Lead Temperature (Soldering, 10 sec) ------------------------------------------------------------------------------------------------------------ 260OC
ESD Rating (Note 2)
HBM (Human Body Mode) --------------------------------------------------------------------------------------------------------------------- 2kV
MM (Machine Mode) ----------------------------------------------------------------------------------------------------------------------------- 200V

Thermal Information
Package Thermal Resistance (Note 3)
PSOP-8 θJA -------------------------------------------------------------------------------------------------------------------------------- 50°C/W
WDFN3x3-8L θJA ------------------------------------------------------------------------------------------------------------------------- 68°C/W
PSOP-8L θJC -------------------------------------------------------------------------------------------------------------------------- 5°C/W
WDFN3x3-8L θJC --------------------------------------------------------------------------------------------------------------------------- 6°C/W
Power Dissipation, PD @ TA = 25°C
PSOP-8L ------------------------------------------------------------------------------------------------------------------------ 2.0W
WDFN3x3-8L --------------------------------------------------------------------------------------------------------------------------- 1.47W

Recommended Operation Conditions


Operating Junction Temperature Range (Note 4) ------------------------------------------------------------------------ -40°C to +125°C
Operating Ambient Temperature Range -------------------------------------------------------------------------------------- -40°C to +85°C
Supply Input Voltage, VCC ----------------------------------------------------------------------------------------------------------- +10.8V to 13.2V

Electrical Characteristics
(VCC = 12V, TA = 25OC, unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Supply Input
Supply Input Voltage V CC 10.8 -- 13.2 V
Supply Input Current ICC PWM = OD# = 0V, each channel -- 1 2.5 mA
VCC POR Rising Threshold VCCRTH VCC rising 4.0 4.2 4.4 V
VCC POR Hysteresis VCCHYS -- 0.25 -- V

uPI Semiconductor Corp., http://www.upi-semi.com 4


Rev. F03, File Name: uP6281-DS-F0300

Free Datasheet http://www.Datasheet4U.com


uP6281
Electrical Characteristics
Parameter Symbol Test Conditions Min Typ Max Unit
PWM Input
Input High Threshold PWMRTH 3.15 3.45 3.75 V
Input Low Threshold PWMFTH 0.6 0.9 1.2 V
PWM Floating Voltage PWMFLT -- 2.0 -- V
PWM = 0V -420 -280 -140 uA
PWM Input Current IPWM
PWM = 5V 1.0 1.6 1.9 mA
Output Disable Input OD#
Input High OD#H 2.6 -- -- V
Input Low OD#L -- -- 0.8 V
OD# Input Current IOD# OD# = 0V to 5V -1 -- 1 uA
TPDHOD# -- 20 45 ns
Propogation Delay Time
TPDLOD# -- 20 45 ns
High Side Driver
Output Resistance, Sourcing RH_SRC VBOOT - VPHASE = 12V, IUGATE = -80mA -- 1.2 2.4 Ω
Output Resistance, Sinking RH_SNK VBOOT - VPHASE = 12V, IUGATE = 80mA -- 0.8 1.6 Ω
Output Rising Time TRUGATE VBOOT - VPHASE = 12V, CLOAD = 3nF -- 35 45 ns
Output Falling Time TFUGATE VBOOT - VPHASE = 12V, CLOAD = 3nF -- 20 30 ns
TPDHUGATE VBOOT - VPHASE = 12V -- 40 65 ns
Propogation Delay Time
TPDLUGATE VBOOT - VPHASE = 12V -- 20 35 ns
Low Side Driver
Output Resistance, Sourcing RL_SRC VCC = 12V, ILGATE = -80mA -- 1.2 2.4 Ω
Output Resistance, Sinking RL_SNK VCC = 12V, ILGATE = 80mA -- 0.8 1.6 Ω
Output Rising Time TRLGATE VCC = 12V, CLOAD = 3nF -- 35 45 ns
Output Falling Time TFLGATE VCC = 12V, CLOAD = 3nF -- 20 30 ns
TPDHLGATE VCC = 12V -- 40 65 ns
Propogation Delay Time
TPDLLGATE VCC = 12V -- 20 35 ns

uPI Semiconductor Corp., http://www.upi-semi.com 5


Rev. F03, File Name: uP6281-DS-F0300

Free Datasheet http://www.Datasheet4U.com


uP6281
Electrical Characteristics
OD#

TPDLDOD# TPDHDOD#

90%
UGATE or
LGATE 10%

PWM

TPDLLGATE TFLGATE

LGATE

TPDHUGATE TPDLUGATE TPDHLGATE


TRUGATE TFUGATE TRLGATE

UGATE

Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device.
These are for stress ratings. Functional operation of the device at these or any other conditions beyond those
indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may remain possibility to affect device reliability.
Note 2. Devices are ESD sensitive. Handling precaution recommended.
Note 3. θJA is measured in the natural convection at TA = 25°C on a low effective thermal conductivity test board of
JEDEC 51-3 thermal measurement standard.
Note 4. The device is not guaranteed to function outside its operating conditions.

uPI Semiconductor Corp., http://www.upi-semi.com 6


Rev. F03, File Name: uP6281-DS-F0300

Free Datasheet http://www.Datasheet4U.com


uP6281
Typical Operation Characteristics
OD# Rising Proporgation Delay OD# Falling Proporgation Delay

OD# OD#
(1V/Div) (1V/Div)

LGATE LGATE
(5V/Div) (5V/Div)

Time (40ns/Div) Time (40ns/Div)


PWM = 0V, 20MHz bandwidth limited PWM = 0V, 20MHz bandwidth limited

PWM Proporgation Delay Short Pulse Waveforms

UGATE
(5V/Div)

UGATE
(5V/Div)
LGATE
PHASE
(5V/Div)
(5V/Div)
PWM
(2V/Div)
LGATE
UGATE-PHASE
(5V/Div)
(5V/Div)

Time (80ns/Div) Time (40ns/Div)


20MHz bandwidth limited 20MHz bandwidth limited

Switching Waveforms Switching Waveforms

UGATE UGATE
(5V/Div) (5V/Div)

PHASE LGATE LGATE PHASE


(5V/Div) (5V/Div) (5V/Div) (5V/Div)

UGATE-PHASE UGATE-PHASE
(5V/Div) (5V/Div)

Time (40ns/Div) Time (40ns/Div)


20MHz bandwidth limited 20MHz bandwidth limited

uPI Semiconductor Corp., http://www.upi-semi.com 7


Rev. F03, File Name: uP6281-DS-F0300

Free Datasheet http://www.Datasheet4U.com


uP6281
Application Information
The power dissipation in uP6281 is dependent of the supply 100
voltage, the PWM frequency and the input capacitance of
the MOSFET:
90

Thermal Resistance θ JA (OC/W)


PLOSS
80
= VCC {ICC + [ VCC (CISS _ U + CISS _ L ) + VIN × C OSS _ U ]fPWM }

where VCC is the supply voltage, ICC is the operation current 70


of the control circuit, CISS_U and CISS_L are the total input
capacitance of the upper and lower MOSFET respectively, 60
VIN is the supply voltage of the buck converter, COSS_U is the
reverse transfer capacitance regarding the Miller effect and 50
fPWM is the PWM input frequency. Take a typical case for
example, VCC = 12V, ICC = 1mA, CISS_U = 2x1.5nF, COSS_U = 40
2x0.1nF, VIN = 12V, CISS_L = 2x3nF, fOSC = 300kHz, the
power dissipation is calculated as: 30
0 10 20 30 40 50 60 70
Copper Area (mm2)
PLOSS
= 12V {1mA + [12V(3nF + 6nF) + 12V × 0.2nF]300kHz} Figure 1. Thermal Resistance θJA vs. Copper Area
= 0.41W Take the above case for example, 0.41W power loss will
cause 0.41W x 50OC/W = 20.5OC temperature raise with
The uP6281 is available in thermal enhanced PSOP-8L or
50mm2 copper area.
WDFN3x3-8L packages. However, the thermal resistance
θJA still highly depends on the PCB design. Copper plane
under the exposed pad is an effective heatsink and is useful
for improving thermal conductivity. Figure 1 shows the
relationship between thermal resistance θJA of PSOP-8L
package vs. copper area on a standard JEDEC 51-7 (4
layers, 2S2P) thermal test board at TA = 25OC. A 50mm2
copper plane reduces θJA from 75OC/W to 50OC/W.

uPI Semiconductor Corp., http://www.upi-semi.com 8


Rev. F03, File Name: uP6281-DS-F0300

Free Datasheet http://www.Datasheet4U.com


uP6281
Package Information
PSOP-8 Package

0.70 ± 0. 10 4.80 - 5.00


1.27 ± 0.10
1.80 - 2.30

1.50 ± 0. 10
2.20 ± 0. 10

4.00 ± 0. 10
2.20 ± 0. 10
7.00 ± 0.10
5.50 ± 0.10

5.80 - 6.20
3.80 - 4.00

1.80 - 2.30
1.27 BSC 0.32 - 0.52

Recommended Solder Pad Layout

1.45 - 1.60

0.18 - 0.25 1.75 MAX


0.05 - 0.25

0.40 - 0.90 3.81 BSC

Note
1.Package Outline Unit Description:
BSC: Basic. Represents theoretical exact dimension or dimension target
MIN: Minimum dimension specified.
MAX: Maximum dimension specified.
REF: Reference. Represents dimension for reference use only. This value is not a device specification.
TYP. Typical. Provided as a general value. This value is not a device specification.
2.Dimensions in Millimeters.
3.Drawing not to scale.
4.These dimensions no not include mold flash or protrusions. Mold flash or protrusions shell not exceed 0.15mm.

uPI Semiconductor Corp., http://www.upi-semi.com 9


Rev. F03, File Name: uP6281-DS-F0300

Free Datasheet http://www.Datasheet4U.com


uP6281
Package Information
WDFN3x3-8L Package
2.90 - 3.10 0.30 - 0.45 1.95 - 2.50

5 8

1.60 - 1.80
2.90 - 3.10

4 1

0.50 BSC 0.20 - 0.35

0.8 MAX 1.95 - 2.50

3.45 - 3.55
1.60 - 1.80
2.15 - 2.25
0.20 REF 0.00 - 0.05

0.50 BSC 0.20 - 0.35


Recommended Solder Pitch and Dimensions

Note
1.Package Outline Unit Description:
BSC: Basic. Represents theoretical exact dimension or dimension target
MIN: Minimum dimension specified.
MAX: Maximum dimension specified.
REF: Reference. Represents dimension for reference use only. This value is not a device specification.
TYP. Typical. Provided as a general value. This value is not a device specification.
2.Dimensions in Millimeters.
3.Drawing not to scale.
4.These dimensions no not include mold flash or protrusions. Mold flash or protrusions shell not exceed 0.15mm.

uPI Semiconductor Corp., http://www.upi-semi.com 10


Rev. F03, File Name: uP6281-DS-F0300

Free Datasheet http://www.Datasheet4U.com

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