Philips Semiconductors Product specification

Double-balanced mixer and oscillator NE/SA612A

DESCRIPTION PIN CONFIGURATION

The NE/SA612A is a low-power VHF monolithic double-balanced D, N Packages
mixer with on-board oscillator and voltage regulator. It is intended for
low cost, low power communication systems with signal frequencies
INPUT A 1 8 VCC
to 500MHz and local oscillator frequencies as high as 200MHz. The
mixer is a “Gilbert cell” multiplier configuration which provides gain INPUT B 2 7 OSCILLATOR

of 14dB or more at 45MHz. GND 3 6 OSCILLATOR

The oscillator can be configured for a crystal, a tuned tank OUTPUT A 4 5 OUTPUT B

operation, or as a buffer for an external L.O. Noise figure at 45MHz SR00098

is typically below 6dB and makes the device well suited for high
Figure 1. Pin Configuration
performance cordless phone/cellular radio. The low power
consumption makes the NE/SA612A excellent for battery operated
equipment. Networking and other communications products can
benefit from very low radiated energy levels within systems. The
APPLICATIONS
NE/SA612A is available in an 8-lead dual in-line plastic package and • Cordless telephone
an 8-lead SO (surface mounted miniature package).
• Portable radio
• VHF transceivers
FEATURES • RF data links
• Low current consumption
• Sonabuoys
• Low cost
• Communications receivers
• Operation to 500MHz
• Broadband LANs
• Low radiated energy
• HF and VHF frequency conversion
• Low external parts count; suitable for crystal/ceramic filter
• Cellular radio mixer/oscillator
• Excellent sensitivity, gain, and noise figure

ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
8-Pin Plastic Dual In-Line Plastic (DIP) 0 to +70°C NE612AN SOT97-1
8-Pin Plastic Small Outline (SO) package (Surface-Mount) 0 to +70°C NE612AD SOT96-1
8-Pin Plastic Dual In-Line Plastic (DIP) -40 to +85°C SA612AN SOT97-1
8-Pin Plastic Small Outline (SO) package (Surface-Mount) -40 to +85°C SA612AD SOT96-1

BLOCK DIAGRAM

8 7 6 5
V CC

VOLTAGE OSCILLATOR
REGULATOR

GROUND
1 2 3 4
SR00099

Figure 2. Block Diagram

1990 Sep 17 1 853-0391 00446

Philips Semiconductors Product specification

Double-balanced mixer and oscillator NE/SA612A

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNIT
VCC Maximum operating voltage 9 V
TSTG Storage temperature -65 to +150 °C
Operating ambient temperature range
TA NE 0 to +70 °C
SA -40 to +85

AC/DC ELECTRICAL CHARACTERISTICS

TA=25°C, VCC = 6V, Figure 3
LIMITS
SYMBOL PARAMETER TEST CONDITION UNIT
Min Typ Max
VCC Power supply voltage range 4.5 8.0 V
DC current drain 2.4 3.0 mA
fIN Input signal frequency 500 MHz
fOSC Oscillator frequency 200 MHz
Noise figured at 45MHz 5.0 dB
Third-order intercept point at 45MHz RFIN=-45dBm -13 dBm
Conversion gain at 45MHz 14 17 dB
RIN RF input resistance 1.5 kΩ
CIN RF input capacitance 3 pF
Mixer output resistance (Pin 4 or 5) 1.5 kΩ

DESCRIPTION OF OPERATION radio 2nd IF and demodulator, the NE/SA612A is capable of

The NE/SA612A is a Gilbert cell, an oscillator/buffer, and a receiving -119dBm signals with a 12dB S/N ratio. Third-order
temperature compensated bias network as shown in the equivalent intercept is typically -15dBm (that’s approximately +5dBm output
circuit. The Gilbert cell is a differential amplifier (Pins 1 and 2) which intercept because of the RF gain). The system designer must be
drives a balanced switching cell. The differential input stage cognizant of this large signal limitation. When designing LANs or
provides gain and determines the noise figure and signal handling other closed systems where transmission levels are high, and
performance of the system. small-signal or signal-to-noise issues not critical, the input to the
NE/SA612A should be appropriately scaled.
The NE/SA612A is designed for optimum low power performance.
When used with the NE614A as a 45MHz cordless phone/cellular

1990 Sep 17 2
Philips Semiconductors Product specification

Double-balanced mixer and oscillator NE/SA612A

TEST CONFIGURATION
0.5 to 1.3µH

22pF
34.545MHz THIRD OVERTONE CRYSTAL
1nF
5.5µH 10pF
VCC

6.8µF 100nF
10nF 8 7 6 5
150pF

OUTPUT
1.5 to
612A 44.2µH

330pF

1 2 3 4 120pF

47pF
0.209 to
INPUT 0.283µH

220pF
100nF

SR00101

Figure 3. Test Configuration

8 VCC

18k
BUFFER
6 1.5k 1.5k

7 4 5

25k

BIAS BIAS

2
1

BIAS

1.5k 1.5k
3
GND
SR00102

Figure 4. Equivalent Circuit

1990 Sep 17 3
Philips Semiconductors Product specification

Double-balanced mixer and oscillator NE/SA612A

Besides excellent low power performance well into VHF, the permissible oscillation frequency. If the required L.O. is beyond
NE/SA612A is designed to be flexible. The input, output, and oscillation limits, or the system calls for an external L.O., the
oscillator ports can support a variety of configurations provided the external signal can be injected at Pin 6 through a DC blocking
designer understands certain constraints, which will be explained capacitor. External L.O. should be 200mVP-P minimum to 300mVP-P
here. maximum.
The RF inputs (Pins 1 and 2) are biased internally. They are Figure 7 shows several proven oscillator circuits. Figure 7a is
symmetrical. The equivalent AC input impedance is approximately appropriate for cordless phones/cellular radio. In this circuit a third
1.5k || 3pF through 50MHz. Pins 1 and 2 can be used overtone parallel-mode crystal with approximately 5pF load
interchangeably, but they should not be DC biased externally. Figure capacitance should be specified. Capacitor C3 and inductor L1 act
5 shows three typical input configurations. as a fundamental trap. In fundamental mode oscillation the trap is
omitted.
The mixer outputs (Pins 4 and 5) are also internally biased. Each
output is connected to the internal positive supply by a 1.5kΩ Figure 8 shows a Colpitts varacter tuned tank oscillator suitable for
resistor. This permits direct output termination yet allows for synthesizer-controlled applications. It is important to buffer the
balanced output as well. Figure 6 shows three single-ended output output of this circuit to assure that switching spikes from the first
configurations and a balanced output. counter or prescaler do not end up in the oscillator spectrum. The
dual-gate MOSFET provides optimum isolation with low current.
The oscillator is capable of sustaining oscillation beyond 200MHz in
The FET offers good isolation, simplicity, and low current, while the
crystal or tuned tank configurations. The upper limit of operation is
bipolar circuits provide the simple solution for non-critical
determined by tank “Q” and required drive levels. The higher the Q
applications. The resistive divider in the emitter-follower circuit
of the tank or the smaller the required drive, the higher the
should be chosen to provide the minimum input signal which will
assume correct system operation.

612A 612A

612A

1 2 1 2

INPUT 1 2

a. Single-Ended Tuned Input b. Balanced Input (For Attenuation c. Single-Ended Untuned Input
of Second-Order Products)
SR00103

Figure 5. Input Configuration

1990 Sep 17 4
Philips Semiconductors Product specification

Double-balanced mixer and oscillator NE/SA612A

12pF CT*

5 5

CFU455
or Equivalent
612A 612A
Filter K&L 38780 or Equivalent
*CT matches 3.5kΩ to next stage

4 4

a. Single-Ended Ceramic Filter b. Single-Ended Crystal Filter

5 5

612A
612A

4 4

c. Single-Ended IFT d.. Balanced Output

SR00104

Figure 6. Output Configuration

L1 C2
C3
XTAL

C1
8 7 6 5 8 7 6 5 8 7 6 5

612A 612A 612A

1 2 3 4 1 2 3 4 1 2 3 4
TC02101S TC02111S TC02121S

a. Colpitts Crystal Oscillator b. Colpitts L/C Tank Oscillator c. Hartley L/C Tank Oscillator
(Overtone Mode)
SR00105

Figure 7. Oscillator Circuits

1990 Sep 17 5
Philips Semiconductors Product specification

Double-balanced mixer and oscillator NE/SA612A

5.5µH

+6V

10µF 0.1µF
0.10pF

1 8

2 7 TO
BUFFER
612A
7pF 10pF

3 6

1000pF
DC CONTROL VOLTAGE
4 5 FROM SYNTHESIZER
1000pF
0.06µH
MV2105
OR EQUIVALENT

0.01µF

100k 2k 3SK126
2N918
0.01pF

2N5484
2pF TO SYNTHESIZER

100k 330 0.01µF

TO SYNTHESIZER
100k
1.0nF

SR00106

Figure 8. Colpitts Oscillator Suitable for Synthesizer Applications and Typical Buffers

1990 Sep 17 6
Philips Semiconductors Product specification

Double-balanced mixer and oscillator NE/SA612A

TEST CONFIGURATION

0.5 to 1.3µH
22pF
5.5µH 44.545MHz THIRD OVERTONE CRYSTAL
1nF 5.6pF
VCC

6.8µF
100nF 10nF 8 7 6 5

612A

1 2 3 4 SFG455A3
455kHZ
OR EQUIVALENT
47pF

INPUT 0.209 to 0.283µH

45MHz IN 220pF
100nF

SR00107

Figure 9. Typical Application for Cordless/Cellular Radio

1990 Sep 17 7
Philips Semiconductors Product specification

Double-balanced mixer and oscillator NE/SA612A

3.50 6.00

3.25 5.75
SUPPLY CURRENT 9mA)

4.5V

NOISE FIGURE (dB)

3.00 8.5V 5.50
6.0V
6.0V
8.5V
2.75 4.5V 5.25

2.50 5.00

2.25 4.75

2.00 4.50

1.75 4.25

1.50 4.00
–40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
–40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 TEMPERATURE OC
TEMPERATURE OC
SR00108 SR00111

Figure 10. ICC vs Supply Voltage Figure 13. Noise Figure

RF1 = 45MHz, IF = 455kHz, RF2 = 45.06MHz

20.0
3rd ORDER PRODUCT
19.5 20
19.0
CONVERSION GAIN (dB)

18.5
18.0 6.0V 0
IF OUTPUT POWER (dBm)

17.5 8.5V
4.5V
17.0
16.5 –20 FUND. PRODUCT
16.0
15.5
–40
15.0
14.5
14.0 –60
–40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
TEMPERATURE OC

SR00109
–80 –60 –40 –20 0 20
Figure 11. Conversion Gain vs Supply Voltage RF INPUT LEVEL (dBm) SR00112

Figure 14. Third-Order Intercept and Compression

–10.0
–10.5
INPUT INTERCEPT POINT (dBm)

–11.0 –10
–11.5
–12.0 –11
–12.5 –12
INTERCEPT (dBm)

–13.0
–13
–13.5
–14.0 –14
–14.5
–15
–15.0
–15.5 –16
–16.0
–16.5 –17
–17.0
–40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 –18

TEMPERATURE OC
SR00110 4 5 6 7 8 9 10

Figure 12. Third-Order Intercept Point VCC (VOLTS)

SR00113

Figure 15. Input Third-Order Intermod Point vs VCC

1990 Sep 17 8