Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
Scribd Logo
Upload

Welcome to Scribd!

  • 139 views

    Datasheet

    Uploaded by

    inconito111
    This document provides information about the KIA 3205S N-channel MOSFET. Key specifications include a maximum drain-source current of 130A, an on-resistance of 5.5mΩ at 10V, and applications in power supplies, UPS systems, and power tools. Electrical characteristics, thermal characteristics, and test circuits/waveforms are also summarized across 6 sections.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Datasheet

    Uploaded by

    inconito111
    139 views6 pages
    This document provides information about the KIA 3205S N-channel MOSFET. Key specifications include a maximum drain-source current of 130A, an on-resistance of 5.5mΩ at 10V, and applications in power supplies, UPS systems, and power tools. Electrical characteristics, thermal characteristics, and test circuits/waveforms are also summarized across 6 sections.

    Original Description:

    Datasheet

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides information about the KIA 3205S N-channel MOSFET. Key specifications include a maximum drain-source current of 130A, an on-resistance of 5.5mΩ at 10V, and applications in power supplies, UPS systems, and power tools. Electrical characteristics, thermal characteristics, and test circuits/waveforms are also summarized across 6 sections.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    139 views6 pages

    Datasheet

    Uploaded by

    inconito111
    This document provides information about the KIA 3205S N-channel MOSFET. Key specifications include a maximum drain-source current of 130A, an on-resistance of 5.5mΩ at 10V, and applications in power supplies, UPS systems, and power tools. Electrical characteristics, thermal characteristics, and test circuits/waveforms are also summarized across 6 sections.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 6

    130A，60V

    KIA
    SEMICONDUCTORS
    N-CHANNEL MOSFET 3205S

    1. Features
    n RDS(on)=5.5mΩ@ VGS=10V
    n Lead free and green device available
    n Low Rds-on to minimize conductive loss
    n High avalanche current

    2. Applications

    n Power Supply
    n UPS
    n Power Tool

    3.Symbol

    Pin Function

    1 Gate

    2 Drain

    3 Source

    4 Drain

    Sept.

    1 of 6 Rev 1.2 Sept 2015


    130A，60V
    KIA
    SEMICONDUCTORS
    N-CHANNEL MOSFET 3205S

    4. Absolute maximum ratings

    Parameter Symbol Rating Units


    Drain-source voltage VDSS 60 V
    Gate-source voltage VGSS +25 V
    Junction and storage temperature range TSTG -55 to175 ºC
    TC=25ºC 130 A
    Continuous drain current ID3
    TC=100ºC 90 A
    Pulse drain current TC=25ºC IDP4 360 A
    Avalanche current IAS5 25 A
    Maximum power dissipation EAS5 250 mJ
    TC=25 ºC 200 W
    Maximum power dissipation PD
    TC=100ºC 90 W

    5. Thermal characteristics

    Parameter Symbol Rating Unit


    Thermal resistance,Junction-ambient RθJA 62.5 ºC/W
    Thermal resistance,Junction-case RθJC 0.735 ºC/W

    2 of 6 Rev 1.2 Sept 2015


    130A，60V
    KIA
    SEMICONDUCTORS
    N-CHANNEL MOSFET 3205S

    6. Electrical characteristics
    (TA=25°C,unless otherwise noted)
    Parameter Symbol Test Conditions Min Typ Max Units
    Drain-source breakdown voltage BVDSS VGS=0V,IDS=250μA 60 - - V
    VDS=48V, VGS=0V - - 1
    Zero gate voltage drain current IDSS μA
    TJ=125°C - - 30
    Gate threshold voltage VGS(th) VDS=VGS, ID=250μA 2 3 4 V
    Gate leakage current IGSS VGS=+25V, VDS=0V - - +100 nA
    Drain-source on-state resistance RDS(on)1 VGS=10V,ID=50A - 5.5 7 mΩ
    Gate resistance Rg VDS=0V, VGS=0V,f=1MHz - 1.2 - Ω
    Diode forward voltage VSD1 ISD=50A, VGS=0V - 0.88 1.3 V

    Diode continuous forward current IS3 - - 50 A


    Reverse recovery time trr ISD=70A,VDD=50V, - 15.2 - nS
    Reverse recovery charge Qrr dlSD/dt=100A/μs - 6.16 - nC
    Input capacitance Ciss - 3100 -
    VDS=25V,VGS=0V,
    Output capacitance Coss - 926 - pF
    f=1MHz
    Reverse transfer capacitance Crss - 451 -
    Turn-on delay time td(on) - 20 -
    Rise time tr VDD=30V, ID=70A, - 83.7 -
    ns
    Turn-off delay time td(off) RG=25Ω,VGS=10V - 108 -
    Fall time tf - 92.6 -
    Total gate charge Qg - 66.34 -
    VDS=50V, VGS=10V
    Gate-source charge Qgs - 12.35 -- nC
    ID=70A
    Gate-drain charge Qgd - 33.52 --

    Note:1. Pulse test; pulse width<300us duty cycle<2%.


    2. Guaranteed by design, not subject to production testing.
    3. Package limitation current is 50A.Calculated continuous current based on maximum
    allowable junction temperature.
    4. Repetitive rating, pulse width limited by max junction temperature.
    5.Starting TJ=25℃,L=0.4mH,IAS=50A.

    3 of 6 Rev 1.2 Sept 2015


    130A，60V
    KIA
    SEMICONDUCTORS
    N-CHANNEL MOSFET 3205S

    7.Test circuits and waveforms

    4 of 6 Rev 1.2 Sept 2015


    130A，60V
    KIA
    SEMICONDUCTORS
    N-CHANNEL MOSFET 3205S

    5 of 6 Rev 1.2 Sept 2015


    130A，60V
    KIA
    SEMICONDUCTORS
    N-CHANNEL MOSFET 3205S

    6 of 6 Rev 1.2 Sept 2015

    You might also like