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    Assignment1 Extended

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    maheshwarivikas1982
    The document discusses various topics related to ADCMOS (Analog and Digital CMOS) circuits including: 1. Comparing the characteristics and threshold voltage equations of nMOS and pMOS transistors. 2. Describing the ideal and non-ideal I-V characteristics of nMOS and pMOS devices. 3. Deriving the drain current equations for MOS transistors in different operating regions and explaining second order effects. 4. Discussing CMOS process enhancements, layout design rules, and sources of power dissipation in CMOS circuits.

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    Assignment1 Extended

    Uploaded by

    maheshwarivikas1982
    129 views1 page
    The document discusses various topics related to ADCMOS (Analog and Digital CMOS) circuits including: 1. Comparing the characteristics and threshold voltage equations of nMOS and pMOS transistors. 2. Describing the ideal and non-ideal I-V characteristics of nMOS and pMOS devices. 3. Deriving the drain current equations for MOS transistors in different operating regions and explaining second order effects. 4. Discussing CMOS process enhancements, layout design rules, and sources of power dissipation in CMOS circuits.

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    Assignment1_extended

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    The document discusses various topics related to ADCMOS (Analog and Digital CMOS) circuits including: 1. Comparing the characteristics and threshold voltage equations of nMOS and pMOS transistors. 2. Describing the ideal and non-ideal I-V characteristics of nMOS and pMOS devices. 3. Deriving the drain current equations for MOS transistors in different operating regions and explaining second order effects. 4. Discussing CMOS process enhancements, layout design rules, and sources of power dissipation in CMOS circuits.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    129 views1 page

    Assignment1 Extended

    Uploaded by

    maheshwarivikas1982
    The document discusses various topics related to ADCMOS (Analog and Digital CMOS) circuits including: 1. Comparing the characteristics and threshold voltage equations of nMOS and pMOS transistors. 2. Describing the ideal and non-ideal I-V characteristics of nMOS and pMOS devices. 3. Deriving the drain current equations for MOS transistors in different operating regions and explaining second order effects. 4. Discussing CMOS process enhancements, layout design rules, and sources of power dissipation in CMOS circuits.

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    of 1

    ADCMOS

    Unit-1

    1. Compare nMOS and pMOS transistor.


    2. List the effect of body bias voltage.
    3. Draw the DC transfer characteristics of CMOS inverter.
    4. What are the different operating modes of transistor?
    5. Write the threshold voltage equation for nMOS and for pMOS transistor?
    6. Define body effect and write the threshold equation including the body effect.
    7. Determine whether an nMOS transistor with a threshold voltage of 0.7v is operating in the
    saturation region if GSV=2v and DSV=3v.
    8. Summarize the equation for describing the channel length modulation effect in nMOS
    transistor.
    9. Why the tunneling current is higher for nMOS transistors than pMOS transistors with silica
    gate?
    10. Explain in detail about the
    i)ideal I-V characteristics of nMOS and pMOS devices
    ii) non-ideal I-V characteristics of nMOS and pMOS devices.
    11. Illustrate with necessary diagrams the i) CV characteristics of CMOS
    12. )Derive the drain current of MOS device in different operating regions
    13. Describe in detail about second order effects in MOS transistor
    14. Briefly discuss about the CMOS process enhancement and layout design rules
    15. )An nMOS transistor has the following parameters: gate oxide thickness=10nm, relative
    permittivity of gate oxide =3.9, electron mobility=520cm2/v-sec , threshold voltage=0.7v,
    permittivity of free space=8.85x10-14F/cm and W/L=8. Calculate the drain current when
    VGS=2v and VDS=1.2v and VGS=2v and VDS=2v and also compute the gate oxide capacitance
    per unit area. Note that W and L refer to the width and length of the channel respectively.
    16. An nMOS transistor has a nominal threshold voltage of 0.16v. Determine the shift in
    threshold voltage caused by body effect using the following data. The nMOS transistor is
    operating at a temperature of 300oK with the following parameters: gate oxide
    thicknesstox=0.2x10-6cm, relative permittivity of gate oxide ε ox=3.9, relative permittivity of
    silicon ε si=11.7, substrate bias voltage =2.5v, intrinsic electron concentration Ni=1.5 x 1010
    cm3, impurity concentration in substrate NA=3 x 1016 cm3. Given Boltzman’s constant
    =1.38x10-23J/oK, electron charge =1.6x10-19 coulomb and permittivity of free space
    =8.85x10-14F/cm.
    17. What are the sources of power dissipation. List the methods to reduce dynamic power
    dissipation.
    18. Derive the expression for dynamic power dissipation for the CMOS Inverter. If load
    capacitance increases, What will happen to CMOS power dissipation?
    19. Describethe lambda based design rules used for layout.
    20. What is stick diagram? Sketch the stick diagram for 2 input NAND gate.
    21. (i)Explain layout design rules in detail with necessary diagrams

    (ii)Draw the stick diagram and layout of inverter, NAND and NOR gates

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