Low-Drop Voltage Regulator TLE 4276

Features
• Output voltage tolerance ≤ ± 4%
• Low-drop voltage
• Inhibit input
• Very low current consumption
• Short-circuit-proof
• Reverse polarity proof
• Suitable for use in automotive electronics P-TO220-5-3

Type Ordering Code Package

TLE 4276 V50 Q67000-A9262 P-TO220-5-3
TLE 4276 V85 Q67000-A9263 P-TO220-5-3
TLE 4276 V10 Q67000-A9264 P-TO220-5-3
TLE 4276 G V50 Q67006-A9266 P-TO220-5-122
TLE 4276 G V85 Q67006-A9268 P-TO220-5-122
P-TO220-5-43
TLE 4276 G V10 Q67006-A9270 P-TO220-5-122
TLE 4276 S V50 Q67000-A9267 P-TO220-5-43
TLE 4276 S V85 Q67000-A9269 P-TO220-5-43
TLE 4276 S V10 Q67000-A9271 P-TO220-5-43
TLE 4276 V Q67000-A9265 P-TO220-5-3
TLE 4276 SV Q67000-A9273 P-TO220-5-43
TLE 4276 GV Q67006-A9272 P-TO220-5-122
▼ TLE 4276 D V50 Q67006-A9358 P-TO252-5-1 P-TO220-5-122
▼ TLE 4276 DV Q67006-A9361 P-TO252-5-1

SMD = Surface Mounted Device

▼ New type

P-TO252-5-1 (D-PAK)

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 TLE 4276

Functional Description
The TLE 4276 is a low-drop voltage regulator in a TO220 package. The IC regulates an
input voltage up to 40 V to VQrated = 5.0 V (V50), 8.5 V (V85), 10 V (V10) and adjustable
voltage (V). The maximum output current is 400 mA. The IC can be switched off via the
inhibit input, which causes the current consumption to drop below 10 µA. The IC is short-
circuit-proof and incorporates temperature protection that disables it at over-tempera-
ture.

Dimensioning Information on External Components

The input capacitor CI is necessary for compensating line influences. Using a resistor of
approx. 1 Ω in series with CI, the oscillating of input inductivity and input capacitance can
be damped. The output capacitor CQ is necessary for the stability of the regulation circuit.
Stability is guaranteed at values CQ ≥ 22 µF and an ESR of ≤ 3 Ω within the operating
temperature range.

Circuit Description
The control amplifier compares a reference voltage to a voltage that is proportional to the
output voltage and drives the base of the series transistor via a buffer. Saturation control
as a function of the load current prevents any oversaturation of the power element. The
IC also incorporates a number of internal circuits for protection against:
• Overload
• Overtemperature
• Reverse polarity

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 TLE 4276

Pin Configuration
(top view)

P-TO220-5-3 P-TO220-5-43 P-TO220-5-122 P-TO252-5-1

GND

1 5
1 5

Ι Q
INH N.C.
1 5 1 5 Ι GND Q (VA)
AEP02560
INH N.C.
AEP02043

Ι GND Q
INH N.C.
(VA) Ι GND Q
AEP02041
INH N.C.
(VA)
AEP02042

Figure 1

Pin Definitions and Functions

Pin No. Symbol Function
1 I Input; block to ground directly at the IC with a ceramic capacitor.
2 INH Inhibit; low-active input
3 GND Ground
4 N.C. Not connected for V50, V85, V10
VA Voltage Adjust Input; only for adjustable output from external
voltage divider.
5 Q Output; block to ground with a ≥ 22 µF capacitor.

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 TLE 4276

Temperature Saturation
Sensor Control and
Protection
Circuit

1 6
Ι Q
Control
Amplifier Buffer
Bandgap
Reference

*)

**)
2 4 3
INH VA GND

*) For fixed Voltage Regulator only

**) For adjustable Voltage Regulator only AEB02044

Figure 2
Block Diagram

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 TLE 4276

Absolute Maximum Ratings

Tj = – 40 to 150 °C
Parameter Symbol Limit Values Unit Test Condition
min. max.

Voltage Regulator

Input
Voltage VI – 42 45 V –
Current II – – – Internally limited

Inhibit

Voltage VINH – 42 45 V –

Voltage Adjust Input

Voltage VVA – 0.3 10 V –

Output

Voltage VQ – 1.0 40 V –
Current IQ – – – Internally limited

Ground

Current IGND – 100 mA –

Temperature

Junction temperature Tj – 150 °C –

Storage temperature Tstg – 50 150 °C –

Note: Maximum ratings are absolute ratings; exceeding any one of these values may
cause irreversible damage to the integrated circuit.

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 TLE 4276

Operating Range
Parameter Symbol Limit Values Unit Remarks
min. max.
Input voltage VI VQ + 0.5 40 V –
Junction temperature Tj – 40 150 °C –

Thermal Resistance

Junction ambient Rthja – 65 K/W TO220

Junction ambient Rthja – 70 K/W TO2521), TO263
Junction case Rthjc – 4 K/W –

1)
Soldered in, minimal footprint

Characteristics
VI = 13.5 V; – 40 °C < Tj < 150 °C (unless otherwise specified)
Parameter Symbol Limit Values Unit Measuring Measuring
min. typ. max. Condition Circuit

Output voltage VQ 4.8 5 5.2 V V50-Version 1

5 mA < IQ < 400 mA
6 V < VI < 40 V
Output voltage VQ 8.16 8.5 8.84 V V85-Version 1
5 mA < IQ < 400 mA
9.5 V < VI < 40 V
Output voltage VQ 9.6 10 10.4 V V10-Version 1
5 mA < IQ < 400 mA
11 V < VI < 40 V
Output voltage ∆VQ –4 4 % V-Version 1
tolerance VV.A.= 2.5 V
Output current IQ 400 600 – mA – 1
limitation1)
Current Iq – 0 10 µA VINH = 0 V; 1
consumption; Tj ≤ 100 °C
Iq = II – IQ
Current Iq – 100 220 µA IQ = 1 mA 1
consumption;
Iq = II – IQ

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 TLE 4276

Characteristics (cont’d)
VI = 13.5 V; – 40 °C < Tj < 150 °C (unless otherwise specified)
Parameter Symbol Limit Values Unit Measuring Measuring
min. typ. max. Condition Circuit
Current Iq – 5 10 mA IQ = 250 mA 1
consumption;
Iq = II – IQ Iq 15 25 mA IQ = 400 mA 1
Drop voltage1) VDR – 250 500 mV IQ = 250 mA 1
VDR = VI – VQ
Load ∆VQ – 5 35 mV IQ = 5 mA to 1
regulation 400 mA
Line ∆VQ – 10 25 mV ∆Vl = 12 V to 32V 1
regulation IQ = 5 mA
Power supply PSRR – 60 – dB fr = 100 Hz; 1
ripple rejection Vr = 0.5 VSS
Temperature dVQ – 0.5 – – – mV/K
output voltage dT
drift

1)
Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V.

Inhibit

Inhibit on VINH – 2 3.5 V VQ ≥ 4.9 V 1

voltage
Inhibit off VINH 0.5 1.7 – V VQ ≤ 0.1 V 1
voltage
Input current IINH 5 10 20 µA VINH = 5 V 1

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 TLE 4276

Input ΙΙ 1 5
ΙQ Output

CQ
100 µ F 100 nF
22 µF R 1 *)
TLE 4276
Ι INH 2 *)
VΙ RL
4 Voltage VQ
V INH 3 Adjust R 2 *)

*) Optional for adjustable Voltage Regulator AES02045

Figure 3
Measuring Circuit

1 5 Output
Input

CΙ CQ R 1 *)
TLE 4276
2 *)
e.g. KL 15
4 Voltage
3 Adjust R 2 *)

*) Optional for adjustable Voltage Regulator AES02046

Figure 4
Application Circuit

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 TLE 4276

Typical Performance Characteristics (V50, V85 and V10):

Drop Voltage VDR versus Max. Output Current IQ versus
Output Current IQ Input Voltage VI
AED01962 AED01963
600 800

mV mA
V dr
ΙQ
T j = 125 C 600
400
T j = 25 C
VQ = 0 V
300 400

200

T j = 25 C 200
100 Vdr = V QNOM-0.1 V

0 0
0 100 200 300 mA 400 0 10 20 30 40 V 50
ΙQ VΙ

Current Consumption Iq versus Current Consumption Iq versus

Output Current IQ (high load) Output Current IQ (low load)
AED01964 AED01965
60 0.6

mA mA
Ιq T j = 25 C Ιq T j = 25 C
V Ι = 13.5 V V Ι = 13.5 V

40 0.4

30 0.3

20 0.2

10 0.1

0 0
0 100 200 300 400 mA 600 0 10 20 30 40 mA 60
ΙQ ΙQ

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 TLE 4276

Typical Performance Characteristics for V50:

Output Voltage VQ versus Current Consumption Iq versus
Temperature Tj Input Voltage VI
AED01966 AED01967
5.20 30
V
VQ mA
5.10 Ιq
V Ι = 13.5 V
5.00 20

T j = 25 C
4.90 R L = 20 Ω

4.80 10

4.70

4.60 0
-40 0 40 80 120 C 160 0 10 20 30 V 50
Tj VΙ

Low Voltage Behavior High Voltage Behavior

AED01968
6 AED01969
3.5
V mA
VQ VQ Ι Ι 3.0
5
2.5
4
2.0
VΙ =VQ T j = 25 C
R L = 3.3 k Ω
3 1.5
T j = 25 C
R L = 20 Ω 1.0
2
0.5

1
0

0 -2
0 2 4 6 8 V 10 -50 -25 0 25 V 50
VΙ VΙ

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 TLE 4276

Typical Performance Characteristics for V85:

Output Voltage VQ versus Current Consumption Iq versus
Temperature Tj Input Voltage VI
AED01970 AED01971
9.0 30
V
VQ mA
Ιq
V Ι = 13.5 V
8.5 20

T j = 25 C
R L = 20 Ω

8.0 10

7.5 0
-40 0 40 80 120 C 160 0 10 20 30 V 50
Tj VΙ

Low Voltage Behavior High Voltage Behavior

AED01972 AED01973
12 3.5
V mA
VQ Ι Ι 3.0
10
VQ 2.5
8
2.0
VΙ =VQ T j = 25 C
R L = 8.5 k Ω
6 1.5
T j = 25 C
R L = 34 Ω 1.0
4
0.5
2
0

0 -2
0 4 8 12 16 V 20 -50 -25 0 25 V 50
VΙ VΙ

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 TLE 4276

Typical Performance Characteristics for V10:

Output Voltage VQ versus Current Consumption Iq versus
Temperature Tj Input Voltage VI
AED01974 AED01975
10.5 30
V
VQ mA
Ιq
V Ι = 13.5 V
10.0 20

T j = 25 C
R L = 20 Ω

9.5 10

9.0 0
-40 0 40 80 120 C 160 0 10 20 30 V 50
Tj VΙ

Low Voltage Behavior High Voltage Behavior

AED01976 AED01977
12 3.5
mA
V Ι Ι 3.0
VQ VQ
10
2.5
8
2.0
VΙ =VQ T j = 25 C
R L = 10 k Ω
6 1.5
T j = 25 C
R L = 34 Ω 1.0
4
0.5
2
0

0 -2
0 4 8 12 16 V 20 -50 -25 0 25 V 50
VΙ VΙ

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 TLE 4276

Package Outlines

P-TO220-5-3
(Plastic Transistor Single Outline)

Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information” Dimensions in mm

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 TLE 4276

P-TO220-5-43
(Plastic Transistor Single Outline)

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 TLE 4276

P-TO220-5-122
(Plastic Transistor Single Outline)

Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
SMD = Surface Mounted Device Dimensions in mm

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 TLE 4276

P-TO252-5-1
(Plastic Transistor Single Outline)

6.5 +0.15 2.3 +0.05

-0.10
-0.10

5.4 ±0.1 B 0.9 +0.08

-0.04
A
1 ±0.1

1 ±0.1
0.8 ±0.15
(4.17)
6.22 -0.2

0...0.15
9.9 ±0.5

0.51 min
0.15 max
per side 5x0.6 ±0.1 0.5 +0.08
-0.04

1.14
0.1
4.56
0.25 M A B GPT09161

All metal surfaces tin plated, except area of cut.

Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
SMD = Surface Mounted Device Dimensions in mm

Semiconductor Group 16 1998-11-01