HMC441

v09.0917

GaAs pHEMT MMIC MEDIUM

POWER AMPLIFIER, 6 - 18 GHz

Typical Applications Features

The HMC441 is ideal for: Gain: 15.5 dB
LINEAR & POWER AMPLIFIERS - CHIP

• Point-to-Point and Point-to-Multi-Point Radios Saturated Power: +22 dBm @ 23% PAE
• VSAT Single Supply Voltage:
+5V w/ Optional Gate Bias
• LO Driver for HMC Mixers
50 Ohm Matched Input/Output
• Military EW & ECM
Die Size: 0.94 x 0.94 x 0.1 mm

Functional Diagram General Description

The HMC441 is an efficient GaAs PHEMT MMIC
Medium Power Amplifier which operates between 6
and 18 GHz. The amplifier provides 15.5 dB of gain,
+22 dBm of saturated power, and 23% PAE from a
+5V supply voltage. An optional gate bias is provided
to allow adjustment of gain, RF output power, and DC
power dissipation. The HMC441 amplifier can easily
be integrated into Multi-Chip-Modules (MCMs) due
to its small size. The backside of the die is both RF
and DC ground, simplifying the assembly process
and reducing performance variation. All data is tested
with the chip in a 50 Ohm test fixture connected via
0.025mm (1 mil) diameter wire bonds of minimal
length 0.31mm (12 mils).

Vgg1, Vgg2: Optional Gate Bias

Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = 5V, Vgg1 = Vgg2 = Open

Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 7.0 - 8.0 8.0 - 12.5 12.5 - 14.0 14.0 - 15.5 GHz
Gain 13 15.5 14 16.5 13 15.5 12 14.5 dB
Gain Variation Over Temperature 0.015 0.02 0.015 0.02 0.015 0.02 0.015 0.02 dB/ °C
Input Return Loss 10 13 15 14 dB
Output Return Loss 14 17 23 18 dB
Output Power for 1 dB Compression
15.5 18.5 16 19 17 20 17 20 dBm
(P1dB)
Saturated Output Power (Psat) 17 20 18 21 19 22 19 22 dBm
Output Third Order Intercept (IP3) 29 31 32 32 dBm
Noise Figure 5.0 4.5 4.5 4.5 dB
Supply Current (Idd) 90 115 90 115 90 90 115 mA

Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
1 license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
 HMC441
v09.0917

GaAs pHEMT MMIC MEDIUM

POWER AMPLIFIER, 6 - 18 GHz

Broadband Gain & Return Loss Gain vs. Temperature

20 20

LINEAR & POWER AMPLIFIERS - CHIP

10 16
RESPONSE (dB)

GAIN (dB)
0 12

-10 8

-20 4

-30 0
4 6 8 10 12 14 16 18 20 6 8 10 12 14 16 18
FREQUENCY (GHz) FREQUENCY (GHz)

S21 S11 S22 +25 C +85 C -55 C

Input Return Loss vs. Temperature Output Return Loss vs. Temperature
0 0

-5
-4
RETURN LOSS (dB)

RETURN LOSS (dB)

-10

-8
-15

-20
-12

-25
-16
-30

-20 -35
6 8 10 12 14 16 18 6 8 10 12 14 16 18
FREQUENCY (GHz) FREQUENCY (GHz)

+25 C +85 C -55 C +25 C +85 C -55 C

P1dB vs. Temperature Psat vs. Temperature

25 25

23 23
P1dB (dBm)

Psat (dBm)

21 21

19 19

17 17

15 15
6 8 10 12 14 16 18 6 8 10 12 14 16 18
FREQUENCY (GHz) FREQUENCY (GHz)

+25 C +85 C -55 C +25 C +85 C -55 C

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D 2
 HMC441
v09.0917

GaAs pHEMT MMIC MEDIUM

POWER AMPLIFIER, 6 - 18 GHz

Power Compression @ 11 GHz Power Compression @ 15 GHz

30 30
Pout (dBm), GAIN (dB), PAE (%)

Pout (dBm), GAIN (dB), PAE (%)

LINEAR & POWER AMPLIFIERS - CHIP

25 25

20 20

15 15

10 10

5 5

0 0
-10 -6 -2 2 6 10 -10 -6 -2 2 6 10 14
INPUT POWER (dBm) INPUT POWER (dBm)

Pout (dBm) Gain (dB) PAE (%) Pout (dBm) Gain (dB) PAE (%)

Output IP3 vs. Temperature Noise Figure vs. Temperature

36 10

32 8
NOISE FIGURE (dB)
IP3 (dBm)

28 6

24 4

20 2

16 0
6 8 10 12 14 16 18 6 8 10 12 14 16 18
FREQUENCY (GHz) FREQUENCY (GHz)

+25 C +85 C -55 C +25 C +85 C -55 C

Gain & Power vs. Supply Voltage @ 11 GHz Reverse Isolation vs. Temperature
24 0
GAIN (dB), P1dB (dBm), Psat (dBm)

22 -10

20
ISOLATION (dB)

-20
18
-30
16
-40
14

12 -50

10 -60
2.7 3 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 6 8 10 12 14 16 18
Vdd (V) FREQUENCY (GHz)

Gain P1dB Psat +25 C +85 C -55 C

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
3 Application Support: Phone: 1-800-ANALOG-D
 HMC441
v09.0917

GaAs pHEMT MMIC MEDIUM

POWER AMPLIFIER, 6 - 18 GHz

Gain, Power & Output IP3 Additive Phase Noise Vs Offset Frequency,
vs. Gate Voltage @ 12 GHz RF Frequency = 8 GHz,
RF Input Power = 5 dBm (P1dB)

LINEAR & POWER AMPLIFIERS - CHIP

35 210 -70
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)

30 180 -80
-90

PHASE NOISE (dBc/Hz)

25 150
-100
20 120

Idd (mA)
-110
15 90
-120
10 60
-130
5 30
-140
0 0 -150
-1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0
-160
Vgg1, Vgg2 Gate Voltage (V)
-170
Gain P1dB Psat IP3
10 100 1K 10K 100K 1M
Idd
OFFSET FREQUENCY (Hz)

Absolute Maximum Ratings Typical Supply Current vs. Vdd

Drain Bias Voltage (Vdd1, Vdd2) +5.5 Vdc Vdd (V) Idd (mA)
Gate Bias Voltage (Vgg1,Vgg2) -8 to 0 Vdc +4.5 88
RF Input Power (RFIN)(Vdd = +5Vdc) +20 dBm +5.0 90
Channel Temperature 175 °C +5.5 92
Continuous Pdiss (T= 85 °C) +2.7 80
0.76 W
(derate 8.5 mW/°C above 85 °C)
+3.0 82
Thermal Resistance
118 °C/W +3.3 83
(channel to die bottom)
Storage Temperature -65 to +150 °C Note: Amplifier will operate over full voltage ranges shown above

Operating Temperature -55 to +85 °C

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D 4
 HMC441
v09.0917

GaAs pHEMT MMIC MEDIUM

POWER AMPLIFIER, 6 - 18 GHz

Outline Drawing
LINEAR & POWER AMPLIFIERS - CHIP

NOTES:
Die Packaging Information [1] 1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
Standard Alternate 3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
GP-2 (Gel Pack) [2]
5. BOND PAD METALLIZATION: GOLD
[1] Refer to the “Packaging Information” section for die 6. BACKSIDE METAL IS GROUND.
packaging dimensions. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
[2] For alternate packaging information contact Analog
Devices, Inc.

Pad Descriptions
Pad Number Function Description Pin Schematic
This pad is AC coupled
1 RFIN
and matched to 50 Ohms.

Power Supply Voltage for the amplifier. An external

2, 3 Vdd1, Vdd2
bypass capacitor of 100 pF is required.

This pad is AC coupled

4 RFOUT
and matched to 50 Ohms.

Optional gate control for amplifier. If left open, the

5, 6 Vgg1, Vgg2 amplifier will run at standard current. Negative voltage
applied will reduce current.

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
5 Application Support: Phone: 1-800-ANALOG-D
 HMC441
v09.0917

GaAs pHEMT MMIC MEDIUM

POWER AMPLIFIER, 6 - 18 GHz

(a) Assembly for Single Supply Voltage Operation

LINEAR & POWER AMPLIFIERS - CHIP

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D 6
 HMC441
v09.0917

GaAs pHEMT MMIC MEDIUM

POWER AMPLIFIER, 6 - 18 GHz

(b) Assembly with Optional Gate Bias Voltage Operation

LINEAR & POWER AMPLIFIERS - CHIP

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
7 Application Support: Phone: 1-800-ANALOG-D
 HMC441
v09.0917

GaAs pHEMT MMIC MEDIUM

POWER AMPLIFIER, 6 - 18 GHz

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 0.102mm (0.004”) Thick GaAs MMIC

LINEAR & POWER AMPLIFIERS - CHIP

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina Wire Bond
thin film substrates are recommended for bringing RF to and from the chip 0.076mm
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be (0.003”)

used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
RF Ground Plane
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be located as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is 0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm to 0.152 mm (3 to 6 mils).
Figure 1.

Handling Precautions
Follow these precautions to avoid permanent damage. 0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD pro- Wire Bond
tective containers, and then sealed in an ESD protective bag for shipment. 0.076mm
Once the sealed ESD protective bag has been opened, all die should be (0.003”)

stored in a dry nitrogen environment.

Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems. RF Ground Plane

Static Sensitivity: Follow ESD precautions to protect against > ± 250V

ESD strikes. 0.150mm (0.005”) Thick
Moly Tab
Transients: Suppress instrument and bias supply transients while bias is 0.254mm (0.010”) Thick Alumina
applied. Use shielded signal and bias cables to minimize inductive pick-up. Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched
with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is rec-
ommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started
on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D 8