7.13301400 MEMSstar Semicon Taiwan 2011

Semicon Taiwan 2011
Surface Treatment and Release
memsstar
Supplies vapour phase processing equipment to the global MEMS industry Focussed on integration of release scheme into MEMS process flow
consult on material choices and alternative deposition processes
Only company dedicated to all release etch schemes with proprietary technology and equipment
XeF2 Vapour HF Organic Release
Integration of anti-stiction Coatings with release etch

memsstar Offers:
Unique patented processing solutions for vapour phase isotropic etch and surface modification Wide range of MEMS deposition and etching products including single-wafer fabrication equipment Comprehensive portfolio of etch and surface modification process recipes for MEMS manufacturing using semiconductor equipment to maximize ROI and extend the usability of existing systems Strong semiconductor and MEMS process expertise that eases the path to integrating next-generation release schemes into productive and reliable process flows MEMS etch and coating processes that eliminate the problems associated with alternative approaches, including incompatible and poorly controlled wet chemistries, poor control and monitoring of stagnant gas systems, and multiplicity of unit process steps
memsstar Sacrificial Etch Processing

Key technology benefits focus on performance Single wafer processing Excellent within wafer uniformity Excellent wafer to wafer uniformity Stiction free processing High yield Industry leading etch rates Large process window Optimisation of process for any given structure Industry leading selectivities to most common materials in MEMS Integrated process with anti stiction coating CMOS compatible processes Compatible with wide range of materials including metals
Continuous Vapour Flow Processing

Replaces pulse technique higher etch rates higher selectivities excellent within wafer uniformity excellent wafer to wafer repeatability precise process control Allows use of process monitoring and endpoint techniques Greater productivity
Etch Process Modules - SVR-vHF

Sacrificial Vapour Release
Oxides Undoped, Thermal, PECVD, LPCVD
Etch Chemistry - aHF
Alcohol free process Single wafer, vapour phase processing Excellent within wafer uniformity < 5% Excellent repeatability <5% wafer to wafer Industry leading etch rates High selectivity to underlayer and mechanical materials especially nitride Large process window to optimise process for any structure No corrosion No stiction In Line Controls endpoint
vHF Process Performance

Etch Rate /min
5000 4000 3000 2000 1000 0
25 wafer run 200mm Blanket thermal oxide wafers
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Uniformity %
10
8
6 4 2 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 U%
Etch Process Modules - SVR-Xe

Sacrificial Vapour Release
Silicon Poly, Amorphous, Single Crystal Transition Metals - Molybdenum, Tantalum, Tungsten
Etch Chemistry - XeF2

Single wafer, vapour phase processing Excellent within wafer uniformity < 5% Excellent repeatability <5% wafer to wafer Industry leading etch rates High selectivity to nitride and oxide Large process window to optimise process for any structure No stiction In Line Controls etch rate monitor, endpoint, temperature, optical
XeF2 Process Performance

etch rate
Process Repeatability Release etching with memsstar Wafer to wafer repeatability <2%
1.00 0.80 0.60 0.40 0.20 0.00 1 2 3 4 5 wafer 10 15 20 25
etch rate
Single Crystal Etch Rate

1.40
E/R (um/min)
1.20 1.00 0.80 0.60 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 over 3 months
CCFT is very reproducible 3 months data, 40% open area into single crystal
Process Controls - Endpoint

Multiple endpointing techniques available dependent on structure and etch
29.50 29.00 28.50 28.00 cantilever membrane micromirror
HF Etch
0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.00 -0.10 0
27.00 26.50 26.00 25.50 25.00 0 50 100 150 200
Signal
27.50
20
40
60
80 Time(s)
100
120
140
160
Thermal Endpoint for XeF2 etch of differing structures
Spectroscopic Endpoint for vHF etch
minimise overetch monitor process efficiency improve productivity

Screen Capture
Ideal for
Endpoint detection. Production process control, SPC. Multi process steps with different materials. Enhance development, better understanding of process mechanisms. Reducing development costs, number of experimental runs.
Coating Process Modules - SPD

Surface Preparation and Deposition - Coatings
Precursor chemistry process with CCFT - fast process times Ultra thin and conformal, robust and cost effective Integrated plasma chemistries
Standard Coatings Available

SPD Hydrophobic non stick, fluid transport SPD Hydrophilic wetting layers SPD Bio Compatible in vivo applications SPD Bio Active receptor applications
Examples
Released Micro Bolometer XeF2 etch
Released Motion Sensor vHF etch Surface Treatment and Release
Why memsstar?
- memsstar is the only company specialized in release processing and integration for MEMS manufacturing - Technology-focused company
7 patent applications on release processing and process monitoring 1 patent granted on process monitoring 2 patents granted of process method
Next-generation technology - Wealth of processing experience in etch and deposition

Over 100 man years experience in processing alone Over 400 man years with companies such as AMAT/Lam/Novellus
Wealth of experience on hardware and service

-
100% sign off record to date

Summary
Replace wet chemical processing Higher Yield Zero Stiction Higher Yield Precise process control Unrivalled repeatability Precise process control Process Monitoring Techniques Reduce WIP Higher Yield Reduce Capex Higher Utilisation New technology Lower COO
Single wafer processing
Continuous Flow Processing
Integrate processes on single cluster
Integrate processes into CMOS fab
Develop new controls
Thanks for your time
Any questions?
Deep Silicon Etch System and Technology
VERSALINE Modular systems with leading technology and configuration flexibility
Plasma-Therm
Enabling Sustainable Success
Manufacturer of semiconductor processing equipment serving global specialty markets Company focus
High performance wafer fabrication systems Technology leadership in specialty semiconductor markets Customer recognized award winning service for 12 consecutive years
Plasma-Therm Etch Solutions
Adv . Photomask & Imprint
Data Storage
R&D
Solar
Power
Wireless
Photonics
SSL
MEMS
Platforms
Materials
DSE Application Examples

A few MEMS examples:
Microfludic channels Bio & chemical reaction chambers Interconnect vias Interdigital resonators Power device isolation trenches Micro capacitors .
Wide Range of Market Requirements

Wafer sizes 4, 6 and 8 High Throughput Etch
ICP higher etching rate
Materials
Si / SOI
Profiles
Sloped Vertical High aspect ratio
Substrate Temp. Control

ESC Mechanical Carriers for fragile substrates
High productivity
Low maintenance Temp. control source Each product uses a specific process development intensive Success when we work closely with customers
5
ARDE Loading (high/low) Depth

Shallow 1 -2m Deep >500m
Key VERSALINE Features for Successful Production

PTI Experience Driven DSE Features
Pressure Control (patented) Solid State RF Tuning Fast Gas Switching (patented) SOI Interface Control (patented) Sensitive Endpoint Detection (patented)
DSE Process Requirements
Fragile Substrate ESC/Carrier Technology Temperature Stabilized ICP
DSE Etch/Deposition Cycling

Process control with three steps
Metrics Etching rate Sidewall smoothness Mask undercut SOI Notch ARDE Selectivity
Passivation (C4F8)
Selective passivation removal
Isotropic etching of Si (SF6)
Scallop Depth
Scallop Length
Time Division Multiplexing (TDM) process (also known as Bosch process)

7
DSE Profile Control with Morphing

Smooth and automatic parameter changes during processing Users selectable morphing curves Enhanced capability for special applications
Parameter
For example
Parameter Electrode Bias Dep time (sec) Start 400 2.0 End 500 1.5 Curve 0.2 0.5 0.2
0.5
Process Time
2 Profile Driven To Vertical
Without Morphing
With Morphing
5
Time 8
DSE Smooth Sidewalls with Fast Switching Control

Exhaust C4F8 SF6 Exhaust
MFC
MFC
Fast Gas Delivery Close coupled Rapid Response
Process Module Solid State Matching Smart Pressure Control

<10 nm roughness at 6.4m/min
High etch rate with low roughness with sub-second switching

9
SOI Technology with Patented Plasma-Therm Process Notch Control

Typical Deep Silicon Etching Plasma-Therm DSE SOI Solution
SOI structure with typical notching and undercut problems
Notchless
10
DSE Sensitive Endpoint Detection for SOI Applications
Monitor Plasma Emission
Raw Endpoint Signal
Applying Signal Processing
No Undercut at Si/SiO2 Interfaces
<1% open oxide on 150mm wafer
Profiles - Smooth and Vertical
Optimization for Sidewall Smoothness Very High Aspect Ratio Trench
Feature Width: ~3 um Etched Depth: ~182 um Etching Rate : 3.5 um/min Aspect Ratio: ~60 Sidewall Smoothness: <50 nm 150 mm wafer, 3.5% uniformity
12
Feature Width: ~0.8 um Etched Depth: ~32 um Etching Rate : ~2 um/min Aspect Ratio: ~40 Sidewall Smoothness: <50 nm 150 mm wafer, 3.5% uniformity
DSE Process Requirements Met with Plasma-Therm Technology

Feature profile control Critical dimension adjustment Smooth sidewalls with fast process control technology Superior SOI notch performance Wide process latitude High selectivity High productivity low maintenance, high throughput Stable process performance temperature controlled environment Sensitive endpoint technology
13
DSE Development Benchmark ~20% Open Area

35.0 30.0 Etch Rate (m/min) 25.0 20.0 15.0 10.0 5.0 0.0 0
2010 2009
PTI - Current Performance
10
2011
20 30 Aspect Ratio
40
50
14
Versaline Configuration Flexibility From R&D to Large Volume Production
VCx-600H Thru wall
VCx-400 Thru wall

15
Thank you

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Semicon Taiwan 2011

Surface Treatment and Release

Integration of anti-stiction Coatings with release etch

memsstar Sacrificial Etch Processing

Continuous Vapour Flow Processing

Surface Treatment and Release

Etch Process Modules - SVR-vHF

Etch Chemistry - aHF

vHF Process Performance

25 wafer run 200mm Blanket thermal oxide wafers

Surface Treatment and Release

Etch Process Modules - SVR-Xe

Etch Chemistry - XeF2

Surface Treatment and Release

XeF2 Process Performance

1.00 0.80 0.60 0.40 0.20 0.00 1 2 3 4 5 wafer 10 15 20 25

Single Crystal Etch Rate

1.20 1.00 0.80 0.60 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 over 3 months

Surface Treatment and Release

Process Controls - Endpoint

27.00 26.50 26.00 25.50 25.00 0 50 100 150 200

Thermal Endpoint for XeF2 etch of differing structures

Spectroscopic Endpoint for vHF etch

minimise overetch monitor process efficiency improve productivity

Surface Treatment and Release

Surface Treatment and Release

Coating Process Modules - SPD

Standard Coatings Available

Surface Treatment and Release

Released Micro Bolometer XeF2 etch

Released Motion Sensor vHF etch Surface Treatment and Release

Surface Treatment and Release

Next-generation technology - Wealth of processing experience in etch and deposition

Wealth of experience on hardware and service

100% sign off record to date

Single wafer processing

Continuous Flow Processing

Integrate processes on single cluster

Integrate processes into CMOS fab

Develop new controls

Surface Treatment and Release

Thanks for your time

Surface Treatment and Release

Deep Silicon Etch System and Technology

VERSALINE Modular systems with leading technology and configuration flexibility

Plasma-Therm Etch Solutions

Adv . Photomask & Imprint

DSE Application Examples

Wide Range of Market Requirements

Substrate Temp. Control

ARDE Loading (high/low) Depth

Key VERSALINE Features for Successful Production

DSE Process Requirements

Fragile Substrate ESC/Carrier Technology Temperature Stabilized ICP

DSE Etch/Deposition Cycling

Selective passivation removal

Isotropic etching of Si (SF6)

Time Division Multiplexing (TDM) process (also known as Bosch process)

DSE Profile Control with Morphing

DSE Smooth Sidewalls with Fast Switching Control