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    Digital Assignment 1

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    nivetha
    Assignment for physics of VLSI

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    © All Rights Reserved
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    Digital Assignment 1

    Uploaded by

    nivetha
    3 views1 page
    Assignment for physics of VLSI

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    Digital assignment 1

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    Assignment for physics of VLSI

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    3 views1 page

    Digital Assignment 1

    Uploaded by

    nivetha
    Assignment for physics of VLSI

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    Digital Assignment 1

    1. Derive an expression relating the intrinsic level Ei to the center of the band gap Eg/2.
    Calculate the displacement of Ei from Eg/2 for Si at 300 K, assuming the effective
    mass values for electrons and holes are 1.1 m0 and 0.56 m0, respectively.
    2. A Si sample is doped with 1017As atoms/cm3. What is the equilibrium hole
    concentration p0 at 300 K? Where is EF relative to Ei?. Assume ni= 2.25*1020per cm3.
    3. A new semiconductor has Nc = 1019 cm-3 , Nv = 5 * 1018 cm-3 , and Eg = 2 eV. If it is
    doped with 1017 donors (fully ionized), calculate the electron, hole, and intrinsic
    carrier concentrations at 627°C. Sketch the simplified band diagram, showing the
    position of EF.
    4. Show that the minimum conductivity of a semiconductor sample occurs when

    (b) What is the expression for the minimum conductivity σmin?


    (c) Calculate σmin for Si at 300 K and compare with the intrinsic conductivity. Assume
    electron mobility of intrinsic silicon at 300 K is 1350 cm2 (V-s), hole mobility is 480
    cm2 (V-s) and ni= 1.5*1010per cm3.
    5. An unknown semiconductor has Eg = 1.1 eV and Nc = Nv. It is doped with 1015 cm-3
    donors, where the donor level is 0.2 eV below Ec. Given that EF is 0.25 eV below Ec,
    calculate ni and the concentration of electrons and holes in the semiconductor at 300
    K.
    6. An abrupt Si p-n junction has Na = 1018 cm-3 on one side and Nd = 5 * 1015 cm-3 on the
    other. (a) Calculate the Fermi level positions at 300 K in the p and n regions. (b) Draw
    an equilibrium band diagram for the junction and determine the contact potential V0
    from the diagram. ni= 1.5*1010per cm3 .
    7. An abrupt Si p-n junction has Na = 4*1018 cm-3 on one side and Nd = 1015 cm-3. At
    room temperature. Assume ni= 1.5* 1015 per cm3, εr= 11.9 for Si ,ε0=8.85*10-14F/cm
    calculate.
    a) the built in potential
    b) the depletion layer width and maximum field at zero bias
    c) the depletion layer width and maximum field at reverse bias of 5V
    d) the depletion layer width and maximum field at forward bias of 0.5V
    8. An abrupt Si p-n junction A = 10–4 cm2 has the following properties at 300 K:
    P side N side
    Na = 1018cm-3 Nd = 5*1015 cm-3
    τn = 0.1 μs τp = 10 μs
    μp = 200 cm2 /V - s μn = 1300 cm2 /V – s
    μn = 700 cm2 /V –s μp = 450 cm2 /V – s
    The junction is forward biased by 0.6 V. What is the forward current? What is the
    current at a reverse bias of −0.6 V. assume ni= 1.5 * 1010 per cm3.

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