Addis Ababa University

Faculty of Technology
Department of Electrical and Computer Engineering
Laboratory Report
Course number: Eceg: - 2205 - Electrical Engineering Laboratory II

Experiment Number: 06

Title: Transistor Biasing and Operating point Stabilization

µ VC
IB V2
VB
V1
RB VCC

VBB
IE

Figure A: Circuit Diagram for the Lab. Session

By: Besufekad Mekuria

Group: 1B, Subgroup 5, ID: TCR/0590/01

Date of Lab. session: December 16, 2009

Date of submission: December 23, 2009

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 TABLE OF CONTENTS:

Section Sub-Title Location

NO
1.1 Introduction Page Two

1.2 Objective Page Two

1.3 Preparation Page Three

1.4 Used Equipment Page Three

1.5 Components used Page Three

1.6 Theory Page Three

1.7 Calculations Page Four

1.8 Procedure Page Five

1.9 Results Page Five

1.10 Conclusion Page Seven

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 Transistor Biasing and Operating point Stabilization

1.1 INTRODUCTION
Determining the properties of a transistor for which it operates at the optimal
circumstances is very important in describing many practically useful circuits like:

Amplifier circuits like Differential and operational Amplifier circuits, therefore, normal
moderate operation of the transistor, a DC line is introduced to the corresponding voltage
output graph of the transistor, and about half-way down that line, we find an important line
called the Q-point, which serves to produce maximum output, if we go way down below on the
graph, we will find what is called the cut-off region, and on the extreme left side of the graph,
we can find the “Saturation Region”.

More on this topic will be discussed in section 1.6 of this booklet (page 3).

1.2 OBJECTIVE
A. Developing the necessary techniques of transistor biasing and operating point stabilization.
B. Observing the clipping-off properties of the circuit when the input AC sinusoids are increased.

C. To determine how to work in the safe operating region of the transistor, which is mainly determinate
on the current, voltage and power ratings of the Transistor.

1.3 PRE-LAB PREPARATION

Prior to entering the laboratory, the manual that was supplied by the Laboratory instructors included
detailed theory about the procedures that would have to be undergone carried out in order to properly
assess the input and output characteristics of the circuit while the Transistor connected in it.

1.4 USED EQUIPMENT

No Description Type/Code/Lab Reference Quantity
1 Regulated DC Power source 9V 1
2 Electronic or Vacuum Tube VOM - 1
3 Cathode Ray Oscilloscope - 1
4 Conducting Wires - 12
5 Decade Resistor - 1
Table 1: Electrical Equipments that were used to set up the circuit for the laboratory procedure

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 .

1.5 USED COMPONENTS

No Description Type Quantity
1 Decade Resistor Variant: 0.9 K, 1k, 1.05K 1.1K) 1
2 Circuit Board - 1
Table 2: Electrical Components that were used to set up the circuit for the laboratory procedure

1.6 THEORY
Transistors require proper biasing to operate normally, the emitter-base junction should be
forward biased and the collector-base junction should be reverse biased. Though, the behaviors of
transistors varies greatly with changes in temperature.

A Transistor operates mainly on three distinct regions, these are:

1. Amplification Region.

2. The cut-off Region

3. The Saturation Region

For the maximum possible amplification of the transistor, it should be on a load line, and more
specifically, on a central position called the “Q-point”.

ICE DC operation line of a transistor

Q-point

Cut-off
Region

Saturation VCE
Region
Region

Region
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 Figure 1: The Current-Voltage graph across the Emitter-Collector nodes

1.7 Calculations
For the networks shown in figure 1 and 2, we can easily determine the output and the input voltages by
applying Kirchhoff’s voltage and current law.

That is:

VCC= IBQ *(RB + RE) + VBEQ + ICQ * RE

IEQ = ICQ +IBQ

Again, applying KVL,

IC = (VCC-VCE)/(RE+RC)

VCEQ = ICQ * RC = VCC – ICQ*RDC

RAC = VCEQ/ICQ = 1.75 k OHM

VCEQ = ICQ * RAC = 3.5 V

RAC = (RC * RD) / (RC +RD) and RD = 27 kohm

RC = (1.75 * 27) / (27 – 1.75) = 1.87 Kohm

RDC = VCC/ICQ – RAC = 4.5 – 1.69 = 2.81 KOHM

RDC = RC + RE, RE = RDC – RC = 2.81-1.8 = 1.01OHM

RB = 254(IC-0.25) / (1.97-IC) = 39.2KOHM

GAIN = (OUTPUT VOLTAGE) / (INPUT VOLTAGE) = VO/VI = 40

1.8 PROCEDURE
All of the according steps and procedures carried out in the class were done accordingly to the
laboratory manual supplied to us by the laboratory instructors.

5.1 The Potentials at the three terminals of the transistor are measured using the electronic
voltmeter:

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 5.2 The CRO measurements of the at the input terminal (Vi) and at the output Terminals (Vo), for
varying amplitudes of the input :

5.3 The Voltage Reading RE for different Values

5.4 Using circuit 2, procedures 5.1-5.3 were repeated for the self biasing circuit

5.4.1

5.4.2 The CRO measurements:

5.4.3 The Voltage Reading RE for different Values

Section 1.8.1 (Output Characteristics):

1.1 Using two Vacuum-tube Voltmeters, the measurements of V 1 and V2 were taken. Note that V1
is the Base to Emitter Voltage (VBE) and V2 is Collector to emitter Voltage (VCE).

1.2 The collector current was measured as a function I B where IB is held at predefined values of
0µA, 30µA and 60µA. and this predefined value of I B is found by manually adjusting the resistance
of the variable resistor and the VBB.

Section 1.8.2 (Input Characteristics):

2.1 The current through the emitter leg was measured for predetermined values of V CE (0V, 1V,
3.5V).

2.2 Making sure that the current and power ratings of the transistor are not surpassed, and the
current-voltage-power relation was observed according to the relation IE = PDmax / VCE.

2.3 The Values of IB were recorded for each value of VCE, this was achieved by varying VBE. And
about eight points were recorded to make a sample table and graph.

VCC

RC
C2

C1
RL

R2
RE CE
W

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 Circuit Figure 2: A Modified self Biasing Circuit

VCC

RC
RB C2

C1
RL

RE CE
W

Circuit Figure 2: A Self Biasing Circuit

1.9 Results
In this section, the results to the measurements taken during the section will be classified according to
the procedures on the lab manual,

5.1 The Potentials at the three terminals of the transistor:

VBASE = 2.97V

VCOLLECTOR = 6.58V

VEmitter = 2.23V

5.2 The CRO measurements:

 Initially, when the input voltage Vi is 1Khz 10mV pp(Pure sinusoid), the CRO reading at the output
terminal is also an almost sinusoidal waveform with a value of 1VPP.

 When the signal generated increases and reaches around 58V PP, clipping starts to occur on the
lower part of the output sinusoid.

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  After the input voltage is even further increased to about 150 mV PP, clipping will begin at the lower
side.

5.3 The Voltage Reading RE for different Values

RE (KΩ) VRE (V)

0.9 2.16
0.95 2.18
1.00 2.21
1.05 2.22
1.1 2.23

5.4

Using circuit 2, procedures 5.1-5.3 were repeated.

5.4.1

VBASE = 7.98V

VCOLLECTOR = 10.67V

VEmitter = 7.4V

5.4.2 The CRO measurements:

 Initially, when the input voltage Vi is 1Khz 10mV pp (Pure sinusoid), the CRO reading at the output
terminal is also an almost sinusoidal waveform.

 When the signal generated increases and reaches around 100V PP, clipping starts to occur on the
lower part of the output sinusoid.

 After the input voltage is even further increased to about 140 mV PP, clipping will begin at the lower
side.

5.4.3 The Voltage Reading RE for different Values

RE (KΩ) VRE (V)

0.9 1.56
0.95 1.64
1.00 1.71
1.05 1.79
1.1 1.86

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 1.10 Conclusion
To briefly restate the main concepts we grasped upon completion of the laboratory session, we were able
to understand many things, each will be discussed under its own title.

Observations made about Structural composition of transistors

The Transistor is composed of three major parts in the semiconductor matrix, these are: The Emitter,
the Base and the Collector. All of the input and output characteristics of the network can be measured
by connecting the appropriate measuring meter as shown by the circuit diagram figure (A).

Although it wasn’t part of the procedure, our instructors have demonstrated to us that a special kind
of Oscilloscope can be used to depict the VCE versus ICE Graph.

Observations made about the Ratings of the Transistor

For the proper functioning of the Transistor, certain values of current and voltage (also inherently,
power) should not be surpassed. These values are called: Current Rating, Voltage Rating and Power
rating respectively. And even though the values weren’t imprinted on the transistor we worked on, the
laboratory manual we used instructed for us not to surpass the following value, so, this value can be
considered as the Current Rating value,: IB = 250µA.

Observations made about the Amplification properties of the Transistor

Transistors can be used to amplify voltages, as observed from the laboratory session, the gain of 40,
implies that the input voltage has been magnified 40 times, and hence the transistor has been used as
an Amplifier.

Observations made about practical errors

As it is a known fact, there does not exist a circuit element that functions with a hundred percent
efficiency. Therefore slight deviations of the measured values from the calculated ones are to be expected under
any circumstances. However the possible causes for these irregularities include:

 The DC voltmeter does not give rise to a potential difference with a magnitude that it is programmed to do.
This is generally due to manufacturing defects, defects from improper usage and gradual wearing off.

 The leads are not of Zero Resistance; this is because of factors like: Temperature change, corrosion due to
exposure to Atmospheric Humidity, etc…

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  The Ammeter used was an analog device; therefore readings are perceptible to be misconstrued. And also
continuous mistreatment of the device leads to incorrect readings in the future.

End of Report

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