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    Circuits and Electronic Devices: Lecture No

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    Bilal Bhatti
    This document provides a summary of a lecture on circuits and electronic devices. It discusses dc load lines and their use in determining the operating point of transistors. It also covers metal-oxide-semiconductor field-effect transistors (MOSFETs) including their construction, types (enhancement and depletion mode), symbols, and basic working principles. Examples are provided to illustrate how to analyze dc load lines and calculate drain current for an enhancement-mode MOSFET. Relevant sections and examples from an electronics textbook are cited.

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    Circuits and Electronic Devices: Lecture No

    Uploaded by

    Bilal Bhatti
    20 views19 pages
    This document provides a summary of a lecture on circuits and electronic devices. It discusses dc load lines and their use in determining the operating point of transistors. It also covers metal-oxide-semiconductor field-effect transistors (MOSFETs) including their construction, types (enhancement and depletion mode), symbols, and basic working principles. Examples are provided to illustrate how to analyze dc load lines and calculate drain current for an enhancement-mode MOSFET. Relevant sections and examples from an electronics textbook are cited.

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    This document provides a summary of a lecture on circuits and electronic devices. It discusses dc load lines and their use in determining the operating point of transistors. It also covers metal-oxide-semiconductor field-effect transistors (MOSFETs) including their construction, types (enhancement and depletion mode), symbols, and basic working principles. Examples are provided to illustrate how to analyze dc load lines and calculate drain current for an enhancement-mode MOSFET. Relevant sections and examples from an electronics textbook are cited.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    20 views19 pages

    Circuits and Electronic Devices: Lecture No

    Uploaded by

    Bilal Bhatti
    This document provides a summary of a lecture on circuits and electronic devices. It discusses dc load lines and their use in determining the operating point of transistors. It also covers metal-oxide-semiconductor field-effect transistors (MOSFETs) including their construction, types (enhancement and depletion mode), symbols, and basic working principles. Examples are provided to illustrate how to analyze dc load lines and calculate drain current for an enhancement-mode MOSFET. Relevant sections and examples from an electronics textbook are cited.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
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    You are on page 1of 19

    Ghulam Ishaq Khan Institute of Engineering Sciences and

    Technology, Topi, Pakistan

    ME203
    Circuits and Electronic Devices

    Lecture No: 26

    Instructor
    Dr. Abid Imran
    ------Faculty of Mechanical Engineering------ Fall Semester
    1 2020
    Content

    • Dc load lines
    • MOSFET
    • E-type (enhancement/ depletion mode)
    • D-type (enhancement/ depletion mode)
    Dc load line:

    0
    • In cutoff region
      𝑉
      𝐶𝐸 =𝑉 𝐶𝐶

    • In Saturation region.
    0
      𝑉 𝐶𝐶
      𝐼 𝐶 (𝑠𝑎𝑡 )=
    𝑅𝐶
    • Different operating point based on base current
      • Load line can be changed by changing the or

    • Operating point need to be selected very carefully for amplification


    Dc load line:
    • we assign three values to IB and observe what happens to IC
    and VCE.

      • Find  𝐼 𝐶 =𝐼 𝐵 𝛽 𝐷𝐶

      • Find  

    𝐼  𝐶 =20 𝑚𝐴
      For
     

    𝐼  𝐶 =30 𝑚𝐴
      For
     

    𝐼  𝐶 =40 𝑚𝐴
      For
     
      For
    𝐼  𝐶 =20 𝑚𝐴
     

      For

    𝐼  𝐶 =30 𝑚𝐴
     

      For

    𝐼  𝐶 =40 𝑚𝐴
     
    Dc load line:
      𝑉 𝐶𝐶
    𝐼 𝐶 (𝑎𝑠𝑡)=
    𝑅𝐶

    𝑉
      𝐶𝐸 =𝑉 𝐶𝐶
    Linear amplification (Linear region)
    Linear Operation

    • The region along the load line between saturation and cutoff is generally known as the linear
    region.
    • In this region, the output voltage is ideally a linear reproduction of the input.
    Distortion
    Distorsion

    Too close to saturation region Too close to cutoff region


    Example: Determine the Q-point for the circuit in Figure and draw the dc load
    line. Find the maximum peak value of base current for linear operation.
    Assume  𝛽 𝐷𝐶 =200

    • Base current

    • Collector current

    • Output voltage 𝑉 𝐶𝐶
    𝐼  𝐶 (𝑎𝑠𝑡 )= =60.6 𝑚𝐴
    𝑅𝐶
    • Collector current can be increased ideally in linear region

    • Collector current is being controlled by base current so 𝑉  𝐶𝐸 =𝑉 𝐶𝐶

    Can be increased/
    Decreased
    Metal
    Oxide
    Semiconductor
    Field
    Effect
    Transistor
    1 Current control device Voltage Controlled device
    2 low input impedance High input impedance
    3 low thermal stability better thermal stability
    4 low switching speed high switching speed
    5 more noisy less noisy
    6 difficult to fabricate on easy to fabricate
    IC
    Construction of MOSFET

    Metal Oxide Semiconductor Field


    Effect Transistor

    E MOSFET
    Symbols of MOSFET

    G
    S
    Basis working principle of E-MOSFET (N channel)
    The MOSFET
    • The metal oxide semiconductor field effect transistor (MOSFET) is the second category of FETs.
    • There are depletion MOSFETs (D-MOSFET) and enhancement MOSFETs (E-MOSFET). Note the
    difference in construction. The E-MOSFET has no structural channel.

    Representation of the basic E-MOSFET construction Representation of the basic structure of


    and operation (n-channel). D-MOSFETs.
    The MOSFET – Enhancement MOSFET (E-MOSFET)
    • The E-MOSFET operates only in the enhancement mode and has no depletion mode.
    • For n-channel device, a positive gate voltage above threshold value are needed
    E-MOSFET Transfer Characteristic
    • The E-MOSFET for all practical purposes does not conduct until VGS reaches the threshold voltage (VGS(th)).
    • ID when it is when conducting can be determined by the formulas below.
    • K = ID(on) /(VGS - VGS(th))2 ID = K(VGS - VGS(th))2

    • An n-channel device requires a positive gate-to-source voltage,


    • and a p-channel device requires a negative gate-to-source voltage.
    Ex. 7-9 The data sheet for a 2N7008 E-MOSFET gives ID(on)= 500 mA (minimum) at VGS = 10 V and VGS(th) = 1 V.
    Determine the drain current for VGS = 5 V.

    First, solve for K using Equation,

    I D ( on) 500 mA 500 mA


    K    6. 17 mA / V 2

    (VGS  VGS ( th) ) 2 10 V  1V  2 81V 2

    Next, using the value of K, calculate ID for VGS = 5 V.

    I D  K (VGS  VGS (th ) ) 2


     (6.17 mA / V 2 )(5V  1V ) 2  98.7 mA
    BOOK: Electronic Devices, electron flow version.
    SECTIONS: 5-1, 8-5

    Relevant examples.

    19

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