survey

A Survey on PCM Lifetime Enhancement Schemes

Authors:

Hamid Sarbazi-AzadAuthors Info & Claims

ACM Computing Surveys (CSUR), Volume 52, Issue 4

Article No.: 76, Pages 1 - 38

https://doi.org/10.1145/3332257

Published: 30 August 2019 Publication History

Abstract

Phase Change Memory (PCM) is an emerging memory technology that has the capability to address the growing demand for memory capacity and bridge the gap between the main memory and the secondary storage. As a resistive memory, PCM is able to store data based on its resistance values. The wide resistance range of PCM makes it possible to store even multiple bits per cell (MLC) rather than a single bit per cell (SLC). Unfortunately, PCM cells suffer from short lifetime. That means PCM cells could tolerate a limited number of write operations, and afterward they tend to permanently stick at a constant value.

Limited lifetime is an issue related to PCM memory; hence, in recent years, many studies have been conducted to prolong PCM lifetime. These schemes have vast variety and are applied at different architectural levels. In this survey, we review the important works of such schemes to give insights to those starting to research on non-volatile memories (NVMs). These schemes are not limited to PCM and are applicable on other NVM technologies due to the similarities between them and the generality of lifetime-prolonging schemes.

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Lim YKim DKim J(2024)SELCC: Enhancing MLC Reliability and Endurance with Single-Cell Error Correction Codes2024 Design, Automation & Test in Europe Conference & Exhibition (DATE)10.23919/DATE58400.2024.10546752(1-6)Online publication date: 25-Mar-2024
https://doi.org/10.23919/DATE58400.2024.10546752
Akbarzadeh NDarabi SGheibi-Fetrat AMirzaei ASadrosadati MSarbazi-Azad H(2024)H3DM: A High-bandwidth High-capacity Hybrid 3D Memory Design for GPUsProceedings of the ACM on Measurement and Analysis of Computing Systems10.1145/36390388:1(1-28)Online publication date: 21-Feb-2024
https://dl.acm.org/doi/10.1145/3639038
Jin KDu YZhang MYin ZAusavarungnirun R(2023)Relieving Compression-Induced Local Wear on Non-Volatile Memory Block via Sliding WritesMicromachines10.3390/mi1403056814:3(568)Online publication date: 27-Feb-2023
https://doi.org/10.3390/mi14030568
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Index Terms

A Survey on PCM Lifetime Enhancement Schemes
1. Hardware
  1. Emerging technologies
    1. Memory and dense storage
  2. Robustness
    1. Fault tolerance
    2. Hardware reliability
2. Information systems
  1. Information storage systems
    1. Information storage technologies
      1. Storage class memory
        Phase change memory

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Published In

cover image ACM Computing Surveys

ACM Computing Surveys Volume 52, Issue 4

July 2020

769 pages

ISSN:0360-0300

EISSN:1557-7341

DOI:10.1145/3359984

Editor:
Sartaj Sahni
Department of Computer and Information Science and Engineering

Issue’s Table of Contents

Copyright © 2019 ACM.

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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Association for Computing Machinery

New York, NY, United States

Publication History

Published: 30 August 2019

Accepted: 01 May 2019

Revised: 01 May 2019

Received: 01 February 2018

Published in CSUR Volume 52, Issue 4

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Cited By

Lim YKim DKim J(2024)SELCC: Enhancing MLC Reliability and Endurance with Single-Cell Error Correction Codes2024 Design, Automation & Test in Europe Conference & Exhibition (DATE)10.23919/DATE58400.2024.10546752(1-6)Online publication date: 25-Mar-2024
https://doi.org/10.23919/DATE58400.2024.10546752
Akbarzadeh NDarabi SGheibi-Fetrat AMirzaei ASadrosadati MSarbazi-Azad H(2024)H3DM: A High-bandwidth High-capacity Hybrid 3D Memory Design for GPUsProceedings of the ACM on Measurement and Analysis of Computing Systems10.1145/36390388:1(1-28)Online publication date: 21-Feb-2024
https://dl.acm.org/doi/10.1145/3639038
Jin KDu YZhang MYin ZAusavarungnirun R(2023)Relieving Compression-Induced Local Wear on Non-Volatile Memory Block via Sliding WritesMicromachines10.3390/mi1403056814:3(568)Online publication date: 27-Feb-2023
https://doi.org/10.3390/mi14030568
Zhang JWang CZhu ZKline DJones AYang HWang Y(2023)Realizing Extreme Endurance Through Fault-aware Wear Leveling and Improved Tolerance2023 IEEE International Symposium on High-Performance Computer Architecture (HPCA)10.1109/HPCA56546.2023.10071093(964-976)Online publication date: Feb-2023
https://doi.org/10.1109/HPCA56546.2023.10071093
Zahedi MShahroodi TWong SHamdioui S(2023)Efficient Signed Arithmetic Multiplication on Memristor-Based CrossbarIEEE Access10.1109/ACCESS.2023.326325911(33964-33978)Online publication date: 2023
https://doi.org/10.1109/ACCESS.2023.3263259
Wang ZLi WShuai ZLi Q(2023)GWallocMicroprocessors & Microsystems10.1016/j.micpro.2023.104971103:COnline publication date: 1-Nov-2023
https://dl.acm.org/doi/10.1016/j.micpro.2023.104971
Rai STalawar B(2023)Nonvolatile Memory Technologies: Characteristics, Deployment, and Research ChallengesFrontiers of Quality Electronic Design (QED)10.1007/978-3-031-16344-9_4(137-173)Online publication date: 12-Jan-2023
https://doi.org/10.1007/978-3-031-16344-9_4
TSUKADA STAKAYASHIKI HSATO MKOMATSU KKOBAYASHI H(2022)A Metadata Prefetching Mechanism for Hybrid Memory ArchitecturesIEICE Transactions on Electronics10.1587/transele.2021LHP0004E105.C:6(232-243)Online publication date: 1-Jun-2022
https://doi.org/10.1587/transele.2021LHP0004
Zahedi MLebdeh MBengel CWouters DMenzel SLe Gallo MSebastian AWong SHamdioui S(2022)MNEMOSENE: Tile Architecture and Simulator for Memristor-based Computation-in-memoryACM Journal on Emerging Technologies in Computing Systems10.1145/348582418:3(1-24)Online publication date: 29-Jan-2022
https://dl.acm.org/doi/10.1145/3485824
Kulandai ARose JSchwarz T(2022)Gray counters for non-volatile memoriesMemories - Materials, Devices, Circuits and Systems10.1016/j.memori.2022.1000142(100014)Online publication date: Oct-2022
https://doi.org/10.1016/j.memori.2022.100014
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