MOCVD

In the field of packaging, coatings are commonly applied on containers to avoid interactions between them and their content. For glass bottles, application of a thin film prevents interactions with the phase in contact and consequently the alteration of surface properties of the latter. In this article, we propose an innovative way to apply amorphous alumina coatings on glass bottles by metalorganic chemical vapor deposition from aluminum tri-isopropoxide. A numerical model, using the Computational Fluid Dynamics code FLUENT, has been developed to calculate local profiles of gas flow, temperature, concentration and deposition rates into the reactor. The sub-micrometric alumina films have been deposited at reduced pressure between 480°C and 670°C. Uniform thickness profiles have been determined on cross sections over the length of the bottle and have been successfully simulated. Strongly improved hydrolytic resistance with regard to the uncoated bottles reveals the excellent performa...

We report design, growth, and characterization of midwavelength infrared nBn photodetectors based on a type-II InAs/InAs1-xSbx superlattice
on a GaSb substrate grown by metal-organic chemical vapor deposition. An InAs/AlAs1-ySby/InAs/InAs1-xSbx superlattice design was
used as the large bandgap electron barrier in the photodetectors. At 150 K, the photodetector exhibits a peak responsivity of 1.23 A/W,
corresponding to a quantum efficiency of 41% at an applied bias voltage of 100mV under front-side illumination, with a 50% cut-off wavelength
of 4.6 um.

InP/ InGaAsP tensile strained multiple quantum wells are grown by MOCVD technique. The strain magnitude of quantum well is adjusted according to the intensities of TE and TM outputs from the fabricated broad lasers. The structure of polarization insensitive semiconductor amplifier is obtained.

Cyclic azasilanes have been synthesized for the purpose of developing coupling agents appropriate for a variety of nanotechnologies including surface modification of nanoparticles, nanocrystals, mesoporous materials and substrates. N-Methyl-aza-2,2,4-trimethylsilacyclopen-tane is representative of this class of compounds. Preliminary data for the treatment of inorganic surfaces, including nanoparticles and oxidized silicon wafers, with cyclic azasilanes suggest high-density monolayer deposition by a ring-opening reaction. Cyclic azasilanes contain a cryptic amine functionality that can perform a subsequent tandem coupling reaction with functional molecules after the surface-triggered ring-opening reaction, allowing for a one-pot self-assembly route on nanostructures. Tandem coupling reactions are demonstrated via addition reactions of the cryptic amine with epoxy and acrylate systems .

E-beam pumped lasers are attractive for Laser Cathode Ray Tubes (LCRT) in projection displays and a variety of applications typically associated with optically pumped lasers. For the first time an InGaN/GaN multiple quantum well (MQW) in-plane laser pumped by surface normal pulse and scanning electron beams was demonstrated. Pumping at room temperature (RT) and 80 K showed peak stimulated emission wavelengths of 402 and 409 nm with a full width half maximum (FWHM) of 0.6 nm and 1.2 nm, respectively. The threshold electron beam current densities have been estimated as 60 A/cm 2 for 35 keV electron energy at 80 K using scanning e-beam pumping and 200-300 A/cm 2 at RT using pulsed e-beam pumping with a maximum electron energy of 150 keV. At 80 K, light output of 150 mW was measured out of one facet at an e-beam current of 1.7 mA.

NiO films were grown by metal-organic chemical vapor
deposition (MOCVD) using bis-(ethylcyclopentadienyl)
nickel [(EtCp)2Ni] and oxygen or ozone as precursors.
The kinetic regularities of MOCVD processes were experimentally studied in the deposition temperature range
600-820 K for the reaction systems: (EtCp)2Ni–O2–Ar
and (EtCp)2Ni–O3–O2–Ar. The results obtained show that
the deposition processes in the temperature range 600-
700 K are controlled by kinetics and the value of activation
energy of the processes is 80±5 kJ·mol−1 in both cases.
The growth process in the temperature region 700–
840 K is controlled by mass transport. An introduction of
ozone in the reaction gas phase led to nearly twofold decrease of deposition rate probably because of homogeneous reactions with (EtCp)2Ni.

We report the growth and characterization of mid-wavelength infrared type-II InAs/InAs1xSbx superlattice photodiodes on
GaSb substrates grown by metal-organic chemical vapor deposition. At 150 K, the 50% cut-off wavelength is 5.0 lm, the dark current density is 3.3x 10^4 A/cm^2 under 20 mV bias, and the peak responsivity is 1.76 A/W corresponding to a quantum efficiency
of 55% without anti-reflection coating. A specific detectivity of 1.2 x 10^11 cm Hz^1/2/W is achieved at 4.0 um under 20 mV bias at
150 K