Modeling Retention Errors of 3D NAND Flash for Optimizing Data Placement
Authors: 
Huan Tian, Jiewen Tang, Jun Li, Zhibing Sha, Fan Yang, Zhigang Cai, and Jianwei LiaoAuthors Info & Claims
Huan Tian, Jiewen Tang, Jun Li, Zhibing Sha, Fan Yang, Zhigang Cai, and Jianwei LiaoAuthors Info & ClaimsArticle No.: 62, Pages 1 - 24
Abstract
Considering 3D NAND flash has a new property of process variation (PV), which causes different raw bit error rates (RBER) among different layers of the flash block. This article builds a mathematical model for estimating the retention errors of flash cells, by considering the factor of layer-to-layer PV in 3D NAND flash memory, as well as the factors of program/erase (P/E) cycle and retention time of data. Then, it proposes classifying the layers of flash block in 3D NAND flash memory into profitable and unprofitable categories, according to the error correction overhead. After understanding the retention error variation of different layers in 3D NAND flash, we design a mechanism of data placement, which maps the write data onto a suitable layer of flash block, according to the data hotness and the error correction overhead of layers, to boost read performance of 3D NAND flash. The experimental results demonstrate that our proposed retention error estimation model can yield a R2 value of 0.966 on average, verifying the accuracy of the model. Based on the estimated retention error rates of layers, the proposed data placement mechanism can noticeably reduce the read latency by 29.8% on average, compared with state-of-the-art methods against retention errors for 3D NAND flash memory.
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Index Terms
- Modeling Retention Errors of 3D NAND Flash for Optimizing Data Placement
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Publication History
Published: 21 June 2024
Online AM: 16 April 2024
Accepted: 08 April 2024
Revised: 18 February 2024
Received: 28 September 2023
Published in TODAES Volume 29, Issue 4
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